超薄栅极氧化物SILC和SBD的新实验发现

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI:10.1109/IRWS.1999.830570

M.G. Chen, C.H. Liu, M. Lee, K. Fu

{"title":"超薄栅极氧化物SILC和SBD的新实验发现","authors":"M.G. Chen, C.H. Liu, M. Lee, K. Fu","doi":"10.1109/IRWS.1999.830570","DOIUrl":null,"url":null,"abstract":"It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox<5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"New experimental findings on SILC and SBD of ultra-thin gate oxides\",\"authors\":\"M.G. Chen, C.H. Liu, M. Lee, K. Fu\",\"doi\":\"10.1109/IRWS.1999.830570\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox<5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.\",\"PeriodicalId\":131342,\"journal\":{\"name\":\"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.1999.830570\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1999.830570","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

人们普遍认为超薄(tox<5 nm)栅极氧化物的应力诱发漏电流(SILC)和软击穿(SBD)是由阱辅助隧道(TAT)引起的。本文通过载流子分离方法和退火实验，论证了阱辅助导带电子的隧穿作用和阱辅助价带电子的隧穿作用。本文提出，这些圈闭主要是供体型圈闭。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

New experimental findings on SILC and SBD of ultra-thin gate oxides

It is widely believed that stress-induced leakage current (SILC) and soft breakdown (SBD) of ultra-thin (tox<5 nm) gate oxides are due to trap-assisted tunneling (TAT). In this paper, through the use of carrier separation method and annealing experiments, we argue that SILC is not only contributed by trap-assisted tunneling of conduction band electrons but also by trap-assisted tunneling of valence band electrons. It is proposed in this paper that the traps are mainly donor-like.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)

自引率

0.00%

发文量