Breakdown voltage distribution and extrinsic TDDB failures of MOS gate oxides

Abstract

An oxide reliability analysis algorithm is used to predict extrinsic TDDB failures based on known intrinsic acceleration parameters. Adopting an effective oxide thickness model, the theory relates the oxide defects with breakdown voltage, V/sub BD/, and the long-term oxide reliability of large area devices. The extrinsic TDDB data by Boyko and Gerlach (1989) is analyzed and the small time dependence of extrinsic failures is successfully predicted. It is newly demonstrated that the extrinsic temperature and field acceleration parameters (Ea and /spl gamma/) are effectively different from those of intrinsic failures.