1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)最新文献_第4页

A new technique for the precise measurement of gate oxide damage caused by process induced charging 提出了一种精确测量过程感应充电栅氧化损伤的新技术

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830582

T. Turner, A. Pronin, J. Daniels

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引用次数: 0

HCI characterization of Trans-LC and HCl gate oxidation process 反式lc和HCl栅氧化过程的HCI表征

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830580

Zhiqiang Ma, G. Chapman, V. Ho

引用次数: 1

A methodology to assess the influence of Burn In related to long-term reliability of submicron CMOS transistors 一种评估烧蚀对亚微米CMOS晶体管长期可靠性影响的方法

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI: 10.1109/IRWS.1999.830550

S. Holzhauser, A. Narr

引用次数: 0

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique 利用非破坏性DCIV技术预测超薄栅极氧化物的等离子体充电损伤

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-15 DOI: 10.1109/IRWS.1999.830554

Hao Guan, M. Li, Yaohui Zhang, B.J. Cho, B. Jie, J. Xie, J.L.F. Wang, A. C. Yen, G.T.T. Sheng, Z. Dong, Weidan Li

引用次数: 4

Burn-In 老化

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1900-01-01 DOI: 10.1109/IRWS.1999.830588

R. Vollertsen, R. Hijab

引用次数: 271

Hot-carriers Hot-carriers

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1900-01-01 DOI: 10.1109/IRWS.1999.830577

A. Bravaix

引用次数: 22