利用非破坏性DCIV技术预测超薄栅极氧化物的等离子体充电损伤

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-15 DOI:10.1109/IRWS.1999.830554

Hao Guan, M. Li, Yaohui Zhang, B.J. Cho, B. Jie, J. Xie, J.L.F. Wang, A. C. Yen, G.T.T. Sheng, Z. Dong, Weidan Li

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引用次数: 4

摘要

提出了一种预测超薄栅极氧化物等离子体充电损伤的有效监测方法。在50 /spl和37 /spl的氧化物和不同金属天线结构的深亚微米p- mosfet上进行的DCIV实验清楚地表明，晶片上存在等离子体损伤区域。在等离子体损伤严重的区域，发现了高的初始界面阱密度、快速的潜在降解和低的电荷到软击穿。

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Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

The direct-current current-voltage (DCIV) method is presented to be an effective monitor for predicting plasma charging damage in ultra thin gate oxides. The DCIV experiments in deep submicron p-MOSFETs with 50 /spl Aring/ and 37 /spl Aring/ oxide and with various metal antenna structures clearly indicate a plasma damage region on the wafers. High initial interface trap density, rapid latent degradation and low charge to soft breakdown were found in the serious plasma damage region.

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来源期刊

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)

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