HCI characterization of Trans-LC and HCl gate oxidation process

Abstract

This paper presents our recent HCI (Hot Carrier Injection) characterization results of Trans-LC and HCI gate oxidation process. In the HCI gate oxidation process, a small percentage of chlorine (Cl) is introduced to the oxidation tube to get sodium ion (Na) that can cause device instability. This process, however, is critical with respect to the corrosion of stainless steel pipe and special care is required to prevent the corrosion from happening. Alternatively, a new way of introducing Cl to the oxidation tube by using a new chlorine source produced by a chemical reaction has been investigated. In this case, trans-dichloroethylene (Trans-LC) has been employed as the chlorine source. The reaction is C/sub 2/H/sub 2/Cl/sub 2/+O/sub 2//spl rarr/2CO/sub 2/+2HCl to get the HCl used in the gate oxidation process.