Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Abstract

The direct-current current-voltage (DCIV) method is presented to be an effective monitor for predicting plasma charging damage in ultra thin gate oxides. The DCIV experiments in deep submicron p-MOSFETs with 50 /spl Aring/ and 37 /spl Aring/ oxide and with various metal antenna structures clearly indicate a plasma damage region on the wafers. High initial interface trap density, rapid latent degradation and low charge to soft breakdown were found in the serious plasma damage region.