反式lc和HCl栅氧化过程的HCI表征

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI:10.1109/IRWS.1999.830580

Zhiqiang Ma, G. Chapman, V. Ho

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引用次数: 1

摘要

本文介绍了我们最近在反式lc和HCI栅氧化过程中的HCI(热载流子注入)表征结果。在HCI栅氧化过程中，一小部分氯(Cl)被引入氧化管以得到钠离子(Na)，而钠离子会导致器件不稳定。然而，这个过程对于不锈钢管的腐蚀是至关重要的，需要特别注意防止腐蚀的发生。另外，研究了一种利用化学反应产生的新氯源将氯引入氧化管的新方法。在这种情况下，反式二氯乙烯(Trans-LC)被用作氯源。反应为C/sub - 2/H/sub - 2/Cl/sub - 2/+O/sub - 2//spl rarr/2CO/sub - 2/+2HCl，得到闸门氧化过程中使用的HCl。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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HCI characterization of Trans-LC and HCl gate oxidation process

This paper presents our recent HCI (Hot Carrier Injection) characterization results of Trans-LC and HCI gate oxidation process. In the HCI gate oxidation process, a small percentage of chlorine (Cl) is introduced to the oxidation tube to get sodium ion (Na) that can cause device instability. This process, however, is critical with respect to the corrosion of stainless steel pipe and special care is required to prevent the corrosion from happening. Alternatively, a new way of introducing Cl to the oxidation tube by using a new chlorine source produced by a chemical reaction has been investigated. In this case, trans-dichloroethylene (Trans-LC) has been employed as the chlorine source. The reaction is C/sub 2/H/sub 2/Cl/sub 2/+O/sub 2//spl rarr/2CO/sub 2/+2HCl to get the HCl used in the gate oxidation process.

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来源期刊

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)

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