wfib互连结构可靠性试验结果

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI:10.1109/IRWS.1999.830553

M. Zaragoza, Jingwei Zhang, M. Abramo

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引用次数: 0

摘要

通过FIB测试结构的应力测试，评估了基于w的FIB修正的可靠性。创建了三种结构类型，用于检查过孔、线路和fib沉积绝缘体材料的完整性。结构在125/spl度/C下无电流应力3900小时，在170/spl度/C下有电流应力2700小时。结构也进行了2000次的温度循环。电阻在所有应力条件下都保持稳定，并且fib沉积的W或SiO/sub 2/薄膜或Al线没有退化的迹象。观察到的唯一故障是由于结构不对准导致的绝缘体材料。

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Reliability test results for W FIB interconnect structures

The reliability of W-based FIB modifications is assessed through the stress testing of FIB test structures. Three structure types were created that examined the integrity of vias, lines, and FIB-deposited insulator material. Structures were stressed at 125/spl deg/C with no current for 3900 hours and 170/spl deg/C with current for 2700 hours. Structures were also temperature cycled for 2000 cycles. Electrical resistance remained stable throughout all stress conditions and there was no evidence of degradation to the FIB-deposited W or SiO/sub 2/ films or to the Al lines. The only failure observed was with the insulator material due to misalignment of the structure.

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来源期刊

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)

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