Conduction mechanisms in Cu/low-k interconnect

Abstract

Electrical characterization of Cu/low-k structures was performed to address intrinsic material properties. It was shown that ionic conduction due to contamination inherent to the dielectric was the leading cause of an intrinsic intra-metal line leakage current at low temperatures, while at elevated temperatures a contribution from electron current was detected. Dielectric and barrier layer parameters that control the conduction process were evaluated.