Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy-balance equations and oxide carrier transport equations

Abstract

The Si-SiO/sub 2/ interface has been modelled as an abrupt heterojunction to simulate hot-carrier injection and transport in oxides of n- and p-channel MOSFETs. Energy balance equations in silicon and continuity equations in the oxide and silicon regions are solved consistently with trapping-rate equations in the oxide to simulate hot-carrier induced carrier trapping and interface trap generation.