通过过程优化，成功地将WLR快速测试应用于人工智能

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI:10.1109/IRWS.1999.830562

X. Liu, K. Lo, Q. Guo, J. Cai

{"title":"通过过程优化，成功地将WLR快速测试应用于人工智能","authors":"X. Liu, K. Lo, Q. Guo, J. Cai","doi":"10.1109/IRWS.1999.830562","DOIUrl":null,"url":null,"abstract":"In this paper, a successful application of WLR fast electromigration (EM) test on Al via process optimization is presented. The impact of spin-on-glass (SOG) and pre sputter etch (PSE) on via performance is characterised by using standard wafer-level electromigration accelerated test (SWEAT). By eliminating the potential of SOG outgassing at the via and optimizing per sputter etch oxide loss (PSEOL), the optimization of the via process has been achieved with a 10% reduction in via resistance and a 6.5% improvement in yield.","PeriodicalId":131342,"journal":{"name":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A successful application of WLR fast test on Al via process optimisation\",\"authors\":\"X. Liu, K. Lo, Q. Guo, J. Cai\",\"doi\":\"10.1109/IRWS.1999.830562\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a successful application of WLR fast electromigration (EM) test on Al via process optimization is presented. The impact of spin-on-glass (SOG) and pre sputter etch (PSE) on via performance is characterised by using standard wafer-level electromigration accelerated test (SWEAT). By eliminating the potential of SOG outgassing at the via and optimizing per sputter etch oxide loss (PSEOL), the optimization of the via process has been achieved with a 10% reduction in via resistance and a 6.5% improvement in yield.\",\"PeriodicalId\":131342,\"journal\":{\"name\":\"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.1999.830562\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1999.830562","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文介绍了一种通过工艺优化的WLR快速电迁移(EM)测试在人工智能上的成功应用。采用标准的晶圆级电迁移加速测试(SWEAT)表征了玻璃自旋(SOG)和预溅射蚀刻(PSE)对通孔性能的影响。通过消除孔处SOG脱气的可能性并优化每次溅射蚀刻氧化物损失(PSEOL)，实现了孔工艺的优化，孔电阻降低了10%，产量提高了6.5%。

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A successful application of WLR fast test on Al via process optimisation

In this paper, a successful application of WLR fast electromigration (EM) test on Al via process optimization is presented. The impact of spin-on-glass (SOG) and pre sputter etch (PSE) on via performance is characterised by using standard wafer-level electromigration accelerated test (SWEAT). By eliminating the potential of SOG outgassing at the via and optimizing per sputter etch oxide loss (PSEOL), the optimization of the via process has been achieved with a 10% reduction in via resistance and a 6.5% improvement in yield.

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来源期刊

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)

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