预金属Si/sub x/N/sub y/:H/sub z/介质膜中Si/N比对NMOS通道热载流子可靠性的影响

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) Pub Date : 1999-10-18 DOI:10.1109/IRWS.1999.830585

J. Masin, R. Mena, M. Brugler, B. Rajagopalan

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引用次数: 1

摘要

研究了金属前氮化硅介质膜中硅氮比对NMOSFET通道热载流子可靠性的影响。Si/sub x/N/sub y/:H/sub z/薄膜的Si/N比分别为0.9和0.7。晶圆级热载流子数据显示，用富硅衬里构建的晶体管具有4.5/spl /更高的CHC寿命。电荷泵测量结果表明，对于具有富氮衬里的晶圆片，D/sub /有所增加。结果表明，富氮膜在后续加工过程中释放的氢较少，导致Si/SiO/sub 2/表面氢钝化程度降低，D/sub /增加。观察到的寿命缩短是D/sub /增加的结果。最后，研究表明，尽管在氢气环境下进行了线末退火，但在制造过程早期氢气暴露会对Si/SiO/sub - 2/表面钝化起重要作用，影响CHC的可靠性。

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Impact of Si/N ratios in a pre-metal Si/sub x/N/sub y/:H/sub z/ dielectric film on NMOS channel hot carrier reliability

The effect of silicon to nitrogen ratios in a pre-metal silicon nitride dielectric film on NMOSFET channel hot carrier (CHC) reliability is studied. Si/sub x/N/sub y/:H/sub z/ films are deposited with Si/N ratios of 0.9 and 0.7. Wafer level hot carrier data shows transistors built with a silicon rich liner have a 4.5/spl times/ higher CHC lifetime. Charge pump measurements are carried out and indicate an increase in D/sub it/ for a wafer with a nitrogen rich liner. It is shown that the nitrogen rich film releases less hydrogen during subsequent processing resulting in less hydrogen passivation of the Si/SiO/sub 2/ surface and increased D/sub it/. The observed lifetime reduction is a result of the increase in D/sub it/. Finally, it is demonstrated that despite an end-of-line anneal in a hydrogen ambient, hydrogen exposure early in the fabrication process can play an important role in Si/SiO/sub 2/ surface passivation, affecting CHC reliability.

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来源期刊

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)

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