IEEE Transactions on Electron Devices最新文献_第8页

Porous Microneedle Array Electrode Using Interstitial Fluid as Conductive Fillers for Biosafe and Long-Term Biopotential Monitoring

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-15 DOI: 10.1109/TED.2024.3525456

Zifan Xue;Yunfan Zhang;Yuting Zheng;Shengnan Shen;Hui Li

{"title":"Porous Microneedle Array Electrode Using Interstitial Fluid as Conductive Fillers for Biosafe and Long-Term Biopotential Monitoring","authors":"Zifan Xue;Yunfan Zhang;Yuting Zheng;Shengnan Shen;Hui Li","doi":"10.1109/TED.2024.3525456","DOIUrl":"https://doi.org/10.1109/TED.2024.3525456","url":null,"abstract":"The microneedle array electrodes (MNAEs) can record high-quality biopotentials comparable to wet electrodes while effectively addressing durability and comfort issues caused by electrolytic gel. However, current MNAEs rely on the use of conductive materials, such as metals, which typically exhibit insufficient biosafety and raise concerns due to the risk of functional coating shedding or microneedles (MNs) fracturing and remaining in the body. Here, a biosafe porous-MNAE using interstitial fluid (ISF) as conductive fillers is proposed. Its porous-MNs can penetrate the high-impedance stratum corneum (SC) and automatically absorb ISF through capillary action for electric conduction. This allows the preparation of porous-MNs using totally biodegradable and biocompatible materials, such as polyglycolic acid (PGA) and polylactic acid (PLA) used in this work, without compromising electrode impedance. The results show that the proposed porous-MNAE possesses adequate mechanical property, hygroscopicity, biodegradability, and wearability for practical applications. Meanwhile, it demonstrates a competitive normalized electrode-skin interface impedance (EII) of <inline-formula> <tex-math>$1.94~pm ~0.09$ </tex-math></inline-formula> k<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula> cm2 at 10 Hz on pig ear skin and exhibits priority in continuous 6-h EII measurement. In brief, these results reveal the promising potential of porous-MNAE for biosafe and long-term biopotential monitoring.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1323-1330"},"PeriodicalIF":2.9,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Three-Dimensional Restricted C/C–Sb₂Te Heterostructure for Phase-Change Memory Applications

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-15 DOI: 10.1109/TED.2025.3526100

Chentao Zou;Liangcai Wu;Yanping Sui;Zhitang Song;Sannian Song

引用次数: 0

Examination of Temperature-Dependent Polarization Switching Characteristics in Ferroelectric Ga-Doped HfO₂ Thin Films

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-15 DOI: 10.1109/TED.2024.3521920

Yu-Chun Li;Xiao-Xi Li;Zi-Ying Huang;Ming Li;Ru Huang;David Wei Zhang;Hong-Liang Lu

{"title":"Examination of Temperature-Dependent Polarization Switching Characteristics in Ferroelectric Ga-Doped HfO₂ Thin Films","authors":"Yu-Chun Li;Xiao-Xi Li;Zi-Ying Huang;Ming Li;Ru Huang;David Wei Zhang;Hong-Liang Lu","doi":"10.1109/TED.2024.3521920","DOIUrl":"https://doi.org/10.1109/TED.2024.3521920","url":null,"abstract":"The ferroelectric properties, polarization switching kinetics, and endurance characteristics of Ga-doped HfO2(Ga-HfO2) capacitors have been systematically investigated across a temperature range of 300–473 K. The results reveal a strong temperature dependence: remanent polarization (<inline-formula> <tex-math>${P}_{text {r}}$ </tex-math></inline-formula>) increases, coercive voltage decreases, the imprint effect intensifies, polarization switching slows, and endurance degrades with rising temperature. Notably, the Ga-HfO2 device still maintains stable ferroelectricity at 473 K, with a <inline-formula> <tex-math>$2{P}_{text {r}}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$44~mu $ </tex-math></inline-formula>C/cm2. Besides, over 80% polarization reversal can be achieved with 3.2-V/500-ns excitation for <inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m2 Ga-HfO2 devices. Moreover, the endurance properties of Ga-HfO2 devices surpass 2x<inline-formula> <tex-math>${10}^{{5}}$ </tex-math></inline-formula> cycles at 3.0 V/100 kHz, outperforming those of Zr-doped counterparts at 473 K. The study suggests that defect behaviors primarily drive the temperature dependence in HfO2 devices, providing valuable insights for reliable ferroelectric memory.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"807-812"},"PeriodicalIF":2.9,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-15 DOI: 10.1109/TED.2025.3526113

Ashkhen Yesayan;Aleksandr Grabski;Farzan Jazaeri;Jean-Michel Sallese

引用次数: 0

GaN Monolithic Optopairs for Rapid and High-Resolution Temperature Measurements

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-13 DOI: 10.1109/TED.2025.3525597

Hongying Yang;Yumeng Luo;Kwai Hei Li

引用次数: 0

Vertical Organic Synaptic Transistor Based on Electrolyte Gate Dielectric for Emulating Short-Term Synaptic Plasticity and Pain Perception

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-13 DOI: 10.1109/TED.2025.3526743

Yujiao Li;Gang He;Qian Gao;Can Fu;Qingxuan Li;Shanshan Jiang;Huanhuan Wei

{"title":"Vertical Organic Synaptic Transistor Based on Electrolyte Gate Dielectric for Emulating Short-Term Synaptic Plasticity and Pain Perception","authors":"Yujiao Li;Gang He;Qian Gao;Can Fu;Qingxuan Li;Shanshan Jiang;Huanhuan Wei","doi":"10.1109/TED.2025.3526743","DOIUrl":"https://doi.org/10.1109/TED.2025.3526743","url":null,"abstract":"Inspired by biological neuromorphological systems, organic synaptic transistors (OSTs) have attracted wide attention due to their potential applications in the development of artificial intelligence. At present, the planar OSTs face great challenges in achieving low power consumption and short channel effect, while the vertical OSTs can simulate synaptic characteristics at low voltage owing to its short channel length and unique working principle. Here, we smoothly fabricated vertical structure transistors based on polyvinyl alcohol (PVA) gate dielectrics for the first time by solution method and achieved excellent electrical properties when the gate voltage was only −5 V. Subsequently, the conductivity and carrier transmission efficiency of the device were effectively improved by organic lithium salt-doped PVA gate dielectric, on the basis of which a neural morphological device based on vertical structure was constructed perfectly. By using the electric-double-layer (EDL) capacitance effect and electrochemical doping, the device can achieve low-voltage operation and typical synaptic functions successfully, including excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), long-term potentiation (LTP), and memory refresh. Moreover, the implemented PPF can be extended to simulate pain perception and sensitization. This work shows the great potential of PVA-gated OST based on vertical structure in neuromorphologic applications, facilitating the development of emerging neural morphological systems as well as future artificial neural networks.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1301-1307"},"PeriodicalIF":2.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-Band Terahertz Harmonic Gyrotron Driven by Axis-Encircling Electron Beam

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-13 DOI: 10.1109/TED.2025.3525605

Feng Zhang;Jia-Ji Feng;Xin-Yin Cao;Tien-Fu Yang;Yu-Shan Cho;Ji-Tao Yang;Yue-Yi Zhang;Tsun-Hsu Chang;Chao-Hai Du

{"title":"Dual-Band Terahertz Harmonic Gyrotron Driven by Axis-Encircling Electron Beam","authors":"Feng Zhang;Jia-Ji Feng;Xin-Yin Cao;Tien-Fu Yang;Yu-Shan Cho;Ji-Tao Yang;Yue-Yi Zhang;Tsun-Hsu Chang;Chao-Hai Du","doi":"10.1109/TED.2025.3525605","DOIUrl":"https://doi.org/10.1109/TED.2025.3525605","url":null,"abstract":"Gyrotron driven by the axis-encircling electron beam is a pathway for generating frequency-tunable terahertz radiation on multiple harmonics. In this article, a large-orbit gyrotron (LOG) is designed, manufactured, and experimentally investigated. A magnetic cusp gun (MCG), demonstrating high robustness over a broad range of magnetic fields, has been developed to generate an axis-encircling electron beam with a constant pitch factor of 1.5 and a velocity spread of less than 2%. As the magnetic field strength adjusted at the operating voltage/current of 45 kV/0.7 A, the gyrotron is demonstrated to stably operate at the fundamental harmonic TE12 mode and the second harmonic TE24 mode, at the respective dual bands. The fundamental harmonic oscillation can achieve a wideband continuous frequency tuning range of 5.27 GHz around 160 GHz, with a maximum power of 7.42 kW, corresponding to a working efficiency of 23.5%, and the second harmonic operation can obtain a maximum power of 2.9 kW and an efficiency of 9.2%, with a continuous frequency tuning range of 1 GHz near 391 GHz. The quantitative agreement between experimental results and theoretical calculations indicates the reliability and correctness of the implemented gyrotron system, promising in achieving multiband oscillations at various cyclotron harmonics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1390-1395"},"PeriodicalIF":2.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fast Electron Gun Design Methodology Based on Fitting the Beam-Edge Potential Profiles

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-10 DOI: 10.1109/TED.2025.3526122

C. Zhang;Jinchi Cai;P. C. Yin;Z. X. Su;X. K. Zhang;L. Zeng;Z. Zhang;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei

{"title":"Fast Electron Gun Design Methodology Based on Fitting the Beam-Edge Potential Profiles","authors":"C. Zhang;Jinchi Cai;P. C. Yin;Z. X. Su;X. K. Zhang;L. Zeng;Z. Zhang;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei","doi":"10.1109/TED.2025.3526122","DOIUrl":"https://doi.org/10.1109/TED.2025.3526122","url":null,"abstract":"To shorten the design cycle of the 2-D axisymmetric electron gun, a new design methodology is reported in this article. Unlike the method of iterating the electron gun structure through particle simulations, for the primary beam optics design in the anode-cathode gap, this method mainly needs pure electrostatic simulations to achieve the target beam-edge potential profiles. Based on such an approach, the required electron gun structure, including the cathode, control electrode, and anode, can be quickly obtained. The subsequent particle simulations for handling higher order effects typically require minor geometry adjustments relative to the anode-cathode gap to complete the whole design. Following the proposed procedure, the results show that the target beam parameter with good trajectory laminarity would be obtained. The simulations on electron guns with three different configurations also reveal that any control electrode could achieve the same goal if it satisfies the target beam-edge potential profiles. Finally, the factors affecting the electron laminarity are discussed using one of the electron gun configurations. After that, a set of clear and complete primary beam optics design processes for the electron gun is summarized.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1404-1411"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Annealing Strategy Toward Achieving High-Performance Indium Tungsten Oxide Thin-Film Transistors by Equilibrating Oxygen Vacancy and Chemisorbed Oxygen

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-10 DOI: 10.1109/TED.2025.3525613

Zhiying Chen;Yan Yan;Guanglong Ding;Ye Zhou;Suting Han;Meng Zhang

{"title":"Annealing Strategy Toward Achieving High-Performance Indium Tungsten Oxide Thin-Film Transistors by Equilibrating Oxygen Vacancy and Chemisorbed Oxygen","authors":"Zhiying Chen;Yan Yan;Guanglong Ding;Ye Zhou;Suting Han;Meng Zhang","doi":"10.1109/TED.2025.3525613","DOIUrl":"https://doi.org/10.1109/TED.2025.3525613","url":null,"abstract":"High-performance thin-film transistors (TFTs) are crucial for advanced displays. The use of metal oxide (MO) as an excellent semiconductor to achieve high-mobility TFTs comes with certain challenges, such as a severely negative threshold voltage (<inline-formula> <tex-math>${V} _{th}$ </tex-math></inline-formula>) and instability. These issues are attributed to defects and impurities within MO thin films, specifically oxygen vacancies and chemisorbed oxygens. Addressing these challenges is essential, prompting a study on improved fabrication strategies. In this work, we investigated annealing strategies to enhance the performance of indium tungsten oxide (IWO) TFTs. A two-step annealing approach was proposed to balance the concentration of oxygen vacancies and chemisorbed oxygens. This method effectively boosted the field-effect mobility (<inline-formula> <tex-math>$mu _{FE}$ </tex-math></inline-formula>) of IWO TFTs to 58 cm2/Vs, concurrently achieving a small negative <inline-formula> <tex-math>${V} _{th}$ </tex-math></inline-formula> of −3.5 V and a favorable subthreshold swing (SS) of 0.35 V/dec. The proposed mechanism was validated through technology computer-aided design (TCAD) device simulation and low-frequency noise (LFN) analysis. The law of annealing IWO TFTs was analyzed based on the results obtained from postannealing experiments conducted at variable temperatures. The entirety of the experimental findings and conclusions is anticipated to provide valuable insights for the fabrication of high-mobility IWO TFTs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1167-1173"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling of Conduction Mechanism in Filament-Free Multilayer Bulk RRAM

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-10 DOI: 10.1109/TED.2024.3521953

Yucheng Zhou;Ashwani Kumar;Jaeseoung Park;Yuyi Zhang;Yue Zhou;Seonghyun Kim;Ertugrul Cubukcu;Duygu Kuzum

引用次数: 0