IEEE Transactions on Electron Devices最新文献_第8页

High-Q Coupled Mode Resonator Based on Wafer-Level Transfer Technology

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-19 DOI: 10.1109/TED.2025.3538639

Jicong Zhao;Shitao Lv;Zexin Sun;Dongqing Cang;Haiyan Sun;Quan Shi

{"title":"High-Q Coupled Mode Resonator Based on Wafer-Level Transfer Technology","authors":"Jicong Zhao;Shitao Lv;Zexin Sun;Dongqing Cang;Haiyan Sun;Quan Shi","doi":"10.1109/TED.2025.3538639","DOIUrl":"https://doi.org/10.1109/TED.2025.3538639","url":null,"abstract":"This article presents a high quality factor (Q value) coupled mode Lamb wave resonator (LWR) based on an AlSc0.095N thin film and introduces a novel fabrication process applied to LWRs with an IDT-IDT structure. To address the issue of multiple resonance modes that are excited in IDT-Floating LWRs within the 1.5–3-GHz frequency range due to the close phase velocities of acoustic modes, the proposed IDT-IDT LWR configuration enables the degenerate excitation of multiple acoustic modes. Further optimization of the number of IDT fingers and the width of the reflective boundary effectively suppresses in-band spurious mode. By incorporating an acoustic speeder structure, anchor loss is significantly suppressed, enhancing the Q value. To address the manufacturing challenges of IDT-IDT structured resonators, a fabrication process based on wafer-level transfer technology is proposed. The fabricated AlSc0.095N film with a thickness of 770 nm achieves a full-width at half-maximum (FWHM) value of 1.18°. The LWR fabricated with this process, operating at 2.27 GHz, achieves a Bode-Q value of 1307, and the electromechanical coupling coefficient (<inline-formula> <tex-math>${k}_{t}^{{2}}$ </tex-math></inline-formula>) reaches 5.17% at a 9.5% Sc doping concentration. The proposed LWR with IDT-IDT structure shows an advantage in the figure of merit (FoM <inline-formula> <tex-math>$= {Q} times {k}_{t}^{{2}}$ </tex-math></inline-formula>) compared to other LWRs operating in the 2–3-GHz frequency range, achieving a value of 67.57.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1977-1985"},"PeriodicalIF":2.9,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-19 DOI: 10.1109/TED.2025.3540029

Hyeonsik Choi;Jihyun Kim;Jaehyun Moon;Seung-Youl Kang;Jiyong Woo

{"title":"Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing","authors":"Hyeonsik Choi;Jihyun Kim;Jaehyun Moon;Seung-Youl Kang;Jiyong Woo","doi":"10.1109/TED.2025.3540029","DOIUrl":"https://doi.org/10.1109/TED.2025.3540029","url":null,"abstract":"We present probabilistic bits (p-bits) implemented using a simple and fabrication-friendly Ti/SiOx/Ti stack for probabilistic computing. Sputter-deposited thin SiOx films (<10> <tex-math>${V} _{text {out}}$ </tex-math></inline-formula>) oscillations in response to a given input voltage (<inline-formula> <tex-math>${V} _{text {in}}$ </tex-math></inline-formula>) pulse. When a chemically reactive Ti scavenging layer is introduced, nonuniform TS properties are observed, resulting in switching voltage (or resistance) variability and unexpected oscillation failures. Consequently, <inline-formula> <tex-math>${V} _{mathbf {out}}$ </tex-math></inline-formula> oscillations begin to be detected in the form of random spikes, emulating the probability of representing data as “1” (P1). Notably, we demonstrate that when the SiOx layer is sandwiched between Ti scavengers at both interfaces, the value of <inline-formula> <tex-math>${P} _{{1}}$ </tex-math></inline-formula> can be controlled between 0 and 1 in an inversely proportional relationship to <inline-formula> <tex-math>${V} _{mathbf {in}}$ </tex-math></inline-formula>. This sigmoid <inline-formula> <tex-math>${P} _{{1}}$ </tex-math></inline-formula> curve derived from Ti/SiOx/Ti p-bits plays a crucial role in executing simulated annealing (SA) algorithms. This capability is validated through MATLAB simulations, where the approach is applied to solve vehicle routing problems (VRPs) by identifying optimal solutions.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1738-1744"},"PeriodicalIF":2.9,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Charge-Domain Design of Ferroelectric Tunneling Junction Synapse for Spiking Neural Networks

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-19 DOI: 10.1109/TED.2025.3540759

Xiaobao Zhu;Ning Feng;Jiajun Qiu;Xianyu Wang;Min Zeng;Yanqing Wu;Lining Zhang

{"title":"A Charge-Domain Design of Ferroelectric Tunneling Junction Synapse for Spiking Neural Networks","authors":"Xiaobao Zhu;Ning Feng;Jiajun Qiu;Xianyu Wang;Min Zeng;Yanqing Wu;Lining Zhang","doi":"10.1109/TED.2025.3540759","DOIUrl":"https://doi.org/10.1109/TED.2025.3540759","url":null,"abstract":"A charge-domain design of synaptic circuits based on ferroelectric tunnel junctions (FTJs) is proposed in this work. The device characteristics of experimental FTJs are analyzed, including their varactor properties, voltage-modulated tunneling electro-resistance (TER), and their significant displacement current, which challenge the circuit designs. A charge-domain design strategy is deployed to adapt this uniqueness, and a synaptic FTJ cell with the spiking-time-dependent-plasticity (STDP) rule is developed. With a TCAD-simulated FTJ of representative characteristics, the synaptic cell comprises seven transistors and one FTJ, mitigating the impacts of capacitive current and amplifying the differences of resistance states. Functional design and parameter tuning of leaky integrate-and-fire (LIF) neurons were performed. Using SPICE simulation, FTJ synapses were connected to LIF neurons, forming a low-power, unsupervised spiking neural network (SNN). Trained and tested on Modified National Institute of Standards and Technology (MNIST) handwritten digits, it achieved 88% classification accuracy. This confirms the self-learning ability of the FTJ-based neural network circuit, offering insights for neuromorphic computing advancements.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1730-1737"},"PeriodicalIF":2.9,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis and Characterization Approach of Variation Behavior for Dopant-Segregated Tunnel FETs With Self-Aligned Drain Underlap

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-19 DOI: 10.1109/TED.2025.3540763

Kaifeng Wang;Qianqian Huang;Ru Huang

{"title":"Analysis and Characterization Approach of Variation Behavior for Dopant-Segregated Tunnel FETs With Self-Aligned Drain Underlap","authors":"Kaifeng Wang;Qianqian Huang;Ru Huang","doi":"10.1109/TED.2025.3540763","DOIUrl":"https://doi.org/10.1109/TED.2025.3540763","url":null,"abstract":"The novel dopant-segregated tunnel FET (DS-TFET) has recently been proposed and experimentally demonstrated as a promising low-power device on standard CMOS baseline platform. In this article, for high-volume production, we evaluate the variation behavior of DS-TFET and carefully study its physical mechanism. Different from conventional TFET, the doping gradient of tunnel junction (TDG) and the electrical length of drain underlap region (<inline-formula> <tex-math>${L}_{text {und}}$ </tex-math></inline-formula>) are found to be the two dominant random variation sources, and the additional variation of <inline-formula> <tex-math>${L}_{text {und}}$ </tex-math></inline-formula> results in the asymmetrical variation between <inline-formula> <tex-math>$sigma {I}$ </tex-math></inline-formula><sc>on and <inline-formula> <tex-math>$sigma {I}$ </tex-math></inline-formula><sc>off. Based on the measured and modeled I–V and C–V characteristics, a device-level characterization approach is further developed to electrically extract <inline-formula> <tex-math>${L}_{text {und}}$ </tex-math></inline-formula> and the main variation sources, which is also verified through technology computer aided design (TCAD) simulation. The method of this work paves the way for the development of the variation-aware compact model and the DS-TFET-based circuit analysis, promoting the development of ultralow-power TFET-CMOS hybrid platform.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"2051-2058"},"PeriodicalIF":2.9,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance Enhancement-Mode GaN p-FET Fabricated With an Etch-Stop Process

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-18 DOI: 10.1109/TED.2025.3540053

Hengyuan Qi;Teng Li;Jingjing Yu;Jiawei Cui;Junjie Yang;Sihang Liu;Yunhong Lao;Han Yang;Xuelin Yang;Maojun Wang;Bo Shen;Yamin Zhang;Shiwei Feng;Meng Zhang;Jin Wei

{"title":"High-Performance Enhancement-Mode GaN p-FET Fabricated With an Etch-Stop Process","authors":"Hengyuan Qi;Teng Li;Jingjing Yu;Jiawei Cui;Junjie Yang;Sihang Liu;Yunhong Lao;Han Yang;Xuelin Yang;Maojun Wang;Bo Shen;Yamin Zhang;Shiwei Feng;Meng Zhang;Jin Wei","doi":"10.1109/TED.2025.3540053","DOIUrl":"https://doi.org/10.1109/TED.2025.3540053","url":null,"abstract":"The gate recess process for the enhancement-mode (E-mode) gallium nitride (GaN) p-FET is expected to create a high density of crystalline defects; thus, a large <inline-formula> <tex-math>$vert {V}_{text {th}} vert $ </tex-math></inline-formula> is often accompanied with a poor I<sc>on. To address this challenge, in this work, an etch-stop process is developed with a 1.5-nm AlN layer inserted in the p-GaN layer, so the dry-etch-based gate recess is terminated at the AlN layer. The AlN at the recess region is then removed using a wet etch, so the surface of the gate channel is shielded from the plasma bombardment during the dry etch. The fabricated etch-stop GaN p-FET demonstrates an E-mode operation with a large <inline-formula> <tex-math>${V} _{text {th}} = -4.9$ </tex-math></inline-formula> V, a high I<sc>on of 6.79 mA/mm, a small <inline-formula> <tex-math>${V} _{text {th}}$ </tex-math></inline-formula> hysteresis of 0.2 V, and a high I<sc>on/I<sc>off ratio of 106. Furthermore, an E-mode n-channel FET was fabricated on the same epitaxial wafer to demonstrate the potential of the proposed etch-stop p-FET technology for GaN complementary logic (CL). Therefore, the technology demonstrated in this work is proved an effective approach to address the <inline-formula> <tex-math>${V} _{text {th}}$ </tex-math></inline-formula>–I<sc>on tradeoff in the GaN p-FET for CL applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1663-1668"},"PeriodicalIF":2.9,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Speed Ultraviolet Photodetector Based on p-GaN Gate HEMT for Flame Monitoring

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-17 DOI: 10.1109/TED.2025.3539636

Ercan Yilmaz;Haodong Wang;Emre Doganci;Meixin Feng;Qian Sun;Alex Mutale;Aysegul Kahraman;Umutcan Gurer;Ozan Yilmaz;Azer Sadigov;Farid Ahmadov;Erhan Budak

{"title":"High-Speed Ultraviolet Photodetector Based on p-GaN Gate HEMT for Flame Monitoring","authors":"Ercan Yilmaz;Haodong Wang;Emre Doganci;Meixin Feng;Qian Sun;Alex Mutale;Aysegul Kahraman;Umutcan Gurer;Ozan Yilmaz;Azer Sadigov;Farid Ahmadov;Erhan Budak","doi":"10.1109/TED.2025.3539636","DOIUrl":"https://doi.org/10.1109/TED.2025.3539636","url":null,"abstract":"The p-GaN gate high electron mobility transistor (HEMT) with a <inline-formula> <tex-math>$2.0times 10^{-{5}}$ </tex-math></inline-formula> cm2 sensitive area as a UV photodetector (PD) has been designed and fabricated in this study. AlGaN/gallium nitride (GaN) heterostructure was adopted to get a 2-D electron gas (2DEG) as a conductive channel, resulting in a high photoresponsivity of <inline-formula> <tex-math>$8.07times 10^{{4}}$ </tex-math></inline-formula> A/W, a sharp cutoff wavelength at 360 nm, high UV-to-visible rejection ratio of <inline-formula> <tex-math>$1.80times 10^{{6}}$ </tex-math></inline-formula>, rise and decay time of 0.12 and 1.0 ms, respectively. The dark current of <inline-formula> <tex-math>$5.44times 10^{-{7}}$ </tex-math></inline-formula> A, the photocurrent of <inline-formula> <tex-math>$4.42times 10^{-{3}}$ </tex-math></inline-formula> A at 5 V, the external quantum efficiency (EQE) of 2.77% <inline-formula> <tex-math>$times 10^{{5}}$ </tex-math></inline-formula>%, and the detectivity of <inline-formula> <tex-math>$8.31times 10^{{14}}$ </tex-math></inline-formula> Jones for the UV PD were determined under a low UV light intensity of 5 mW/cm2 at 360-nm UV illumination. The obtained results show that the performance of as-fabricated UV PD based on AlGaN/GaN HEMT is significantly improved compared to the literature. This device, which has lower noise equivalent power (NEP) and enhanced detectivity features compared to existing ones, is a promising candidate for military and space applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1993-1999"},"PeriodicalIF":2.9,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Limiter Performance Improvement Through Thermal Management of GaN SBD Combined Microjet Cooling With Optimized Substrate

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-17 DOI: 10.1109/TED.2025.3540031

Rikang Zhao;Dichen Lu;Xuanwu Kang;Weike Wang;Lihua Wang;Shuangli Wu;Xiangguan Tan;Yuxin Ye;Yanmei Kong;Binbin Jiao;Xinyu Liu

{"title":"Limiter Performance Improvement Through Thermal Management of GaN SBD Combined Microjet Cooling With Optimized Substrate","authors":"Rikang Zhao;Dichen Lu;Xuanwu Kang;Weike Wang;Lihua Wang;Shuangli Wu;Xiangguan Tan;Yuxin Ye;Yanmei Kong;Binbin Jiao;Xinyu Liu","doi":"10.1109/TED.2025.3540031","DOIUrl":"https://doi.org/10.1109/TED.2025.3540031","url":null,"abstract":"In this article, we report enhancing RF performance by improving the thermal management of gallium nitride (GaN) Schottky barrier diodes (SBDs), demonstrated through the application of a limiter. Benefiting from the rapid heat dissipation of microjet cooling, the impact of heat accumulation on the performance of GaN SBDs is analyzed, demonstrating the dependence of GaN lateral heterojunction devices on high thermal conductivity substrate. A GaN-SBD using high thermal conductivity SiC substrate was developed, reducing <sc>on-resistance by 8% and improving saturation current by 12%. By combining microjet cooling with optimized substrates, the thermal management capability of GaN SBDs was significantly enhanced. RF performance was effectively evaluated using a passive limiter monolithic microwave integrated circuit (MMIC), showing the isolation was significantly improved by 3.5 dB at 80 W, and the reflected power was increased by 14%. The results highlight the improvements in RF performance achieved through enhanced thermal management of GaN SBDs and present a preliminary exploration of microjet cooling in high-power limiters.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1912-1918"},"PeriodicalIF":2.9,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-17 DOI: 10.1109/TED.2025.3535843

V. G. Danilov;V. D. Borisov

引用次数: 0

Differentiable Distribution Model of Stochastic Volatile Memristor-Based Neuron

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-17 DOI: 10.1109/TED.2025.3538660

Anzhe Chen;Jiayang Hu;Hanzhi Ma;Yining Jiang;Bin Yu

引用次数: 0

Study of a Lead-Free Perovskite MA3Bi2Br9 Narrowband Photodetector for Blue-Light Detection

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-14 DOI: 10.1109/TED.2025.3538740

Zhi-Cheng Wu;Jia Liu;Xiu-Dong Lu;Jiang Wang;Zhi-Yu Huang;Zhi-Guo Zhu;Cong-Cong Wang;Yan Wang;Feng-Xia Liang;Lin-Bao Luo

{"title":"Study of a Lead-Free Perovskite MA3Bi2Br9 Narrowband Photodetector for Blue-Light Detection","authors":"Zhi-Cheng Wu;Jia Liu;Xiu-Dong Lu;Jiang Wang;Zhi-Yu Huang;Zhi-Guo Zhu;Cong-Cong Wang;Yan Wang;Feng-Xia Liang;Lin-Bao Luo","doi":"10.1109/TED.2025.3538740","DOIUrl":"https://doi.org/10.1109/TED.2025.3538740","url":null,"abstract":"Narrowband photodetection is crucial for various applications, including machine vision, bioimaging, and environmental monitoring. While lead-based perovskites offer promising properties, their toxicity and instability limit their practical applications. Here, we report a high-performance narrowband photodetector (PD) based on lead-free perovskite MA3Bi2Br9 single crystal. By employing the charge collection narrowing (CCN) mechanism, we realized a device exhibiting a pronounced peak response centered at 470 nm, characterized by a narrow full-width at half-maximum (FWHM) of merely 24 nm. The detector exhibits a high responsivity of 0.102 mA/W and a specific detectivity of <inline-formula> <tex-math>$2.21times 10^{8}$ </tex-math></inline-formula> Jones at 15 V bias. Additionally, it demonstrates a high spectral rejection ratio (SRR) of 34 for 470-nm light relative to 510-nm light. To quantify blue-light hazards, we established a numerical relationship between weighted irradiance and photocurrent. Our results highlight the potential of lead-free perovskite-based PDs for practical applications in narrowband detection and environmental monitoring.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1828-1832"},"PeriodicalIF":2.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0