IEEE Transactions on Electron Devices最新文献

{"title":"A Novel High-Efficiency V-Band Coaxial Transit Time Oscillator With a Low Guiding Magnetic Field","authors":"Zulong Chen;Lei Wang;Junpu Ling;Lili Song;Juntao He;Xingfu Gao","doi":"10.1109/TED.2025.3549712","DOIUrl":"https://doi.org/10.1109/TED.2025.3549712","url":null,"abstract":"In this article, a V-band millimeter-wave relativistic high-power microwave (HPM) transit time oscillator is investigated, which is capable of operating with high efficiency under a low guiding magnetic field. To ensure the effectiveness of microwave extraction from the electron beam’s energy, a multimode operation mechanism is adopted in the traveling wave extractor. In the meantime, to improve the modulation effect of the electron beam, a two-stage buncher is designed. Furthermore, to optimize the phase relationship between the electron beam and the axial electric field in the cavity, a resonant cavity is added between the reflector and the first buncher, thus the beam-wave interaction can be enhanced. Finally, particle-in-cell (PIC) simulation results confirm that the novel relativistic V-band coaxial transit time oscillator can output 796 MW of microwave at a voltage of 391 kV, a current of 4.87 kA, and a guiding magnetic field of 1.0 T, respectively. This corresponds to a high efficiency of 41.8%, which is a significant improvement in the efficiency of the V-band HPM sources under low magnetic fields.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2584-2590"},"PeriodicalIF":2.9,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface Engineering for Hysteresis-Free, High-Performance, and Stable a-IGO Thin-Film Transistors","authors":"Zijun Chen;Hao Huang;Han He;Shiwei Sun;Boxi Ye;Die Luo;Xingqiang Liu;Xuming Zou;Bingsuo Zou","doi":"10.1109/TED.2025.3542750","DOIUrl":"https://doi.org/10.1109/TED.2025.3542750","url":null,"abstract":"The instability of oxide thin-film transistors (TFTs) remains a critical concern that demands attention. Herein, interface engineering was employed to enhance the performance of amorphous indium gallium oxide (a-IGO) TFTs. The Al2O3 sandwich-encapsulation a-IGO TFTs demonstrate outstanding electrical characteristics and remarkable stability, evidenced by an average field-effect mobility of 33.1 cm<inline-formula> <tex-math>$^{{2}} cdot $ </tex-math></inline-formula>V<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>s<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>, subthreshold swing of 0.19 V/dec, and an on/off ratio of <inline-formula> <tex-math>$10^{{7}}$ </tex-math></inline-formula> across ten devices. Notably, the most astonishing feature lies in its ability to achieve an exceptionally low hysteresis of merely 0.04 V. Besides, after enduring 3600 s of positive bias stress (PBS) (+2 V) and negative bias stress (NBS) (−2 V), the threshold voltage shifts by insignificant amounts of 0.1 and 0.08 V, respectively. Moreover, the device’s longevity in ambient conditions is noteworthy, as evidenced by a mere 1.2% decrease in mobility after 60 days of exposure, highlighting its exceptional environmental stability. Those enhancements in device performance can be attributed to the defect self-compensation effect, which leads to the reduction of a-IGO thin-film defects in sandwich-structured devices. The results indicate that the sandwich-encapsulated IGO TFTs emerge as a highly promising candidate for the next-generation display industry.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2360-2364"},"PeriodicalIF":2.9,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamical Model of Threshold Switching Process in OTS Selector","authors":"Ziqi Chen;Niannian Yu;Hao Tong;Xiangshui Miao","doi":"10.1109/TED.2025.3549392","DOIUrl":"https://doi.org/10.1109/TED.2025.3549392","url":null,"abstract":"Ovonic threshold switch (OTS) selector is crucial for developing high-density nonvolatile memory (NVM) with crossbar arrays. Its operational speed has been of great concern. This work presents a multiphysics dynamic model of threshold switching in OTS that accurately reproduces the time-resolved electrical property changes during pulse operations. The model focuses on the coupling between electrothermal and structural dynamics at device level rather than the carrier motion at the atomic level. Simulation results show parameter-dependent characteristics consistent with actual devices under varying OTS structure parameters and temperatures. In addition, we simulate the intrinsic stochastic characteristics of OTS using the TS dynamics model by introducing a physical random term, which captures the randomness in delay times for device turn on and turn off. Results indicate that both turn-on delay time and turn-off holding time follow Weibull distributions similar to real devices. This work aids in optimizing the speed performance of OTS devices for NVM and neuromorphic applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2285-2291"},"PeriodicalIF":2.9,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application","authors":"Xuebin Wang;Kaifei Chen;Yutao Li;Jingsi Qiao;Yuanxiao Ma;Chengji Jin;Jixuan Wu;Jiezhi Chen;Masaharu Kobayashi;Guanhua Yang;Ling Li;Fei Mo;Yeliang Wang","doi":"10.1109/TED.2025.3549745","DOIUrl":"https://doi.org/10.1109/TED.2025.3549745","url":null,"abstract":"InGaZnO (IGZO) transistors and their related memory applications have recently aroused great interest among researchers. In this article, we consider a shallow donor with a Gaussian distribution as positive charge in the IGZO channel to analyze surface potential (<inline-formula> <tex-math>$varphi _{text {S}}$ </tex-math></inline-formula>) for subthreshold operation precisely. Meanwhile, a new surface potential analysis method for the IGZO channel is proposed considering 1) the effect of the floating body due to the lack of holes and 2) the effect of enhanced gate charge due to the electric field from the drain and source in the short channel. The proposed compact model demonstrates a good agreement with TCAD simulation and experimental results regarding device variation in all operation regions. Finally, a Monte Carlo simulation of IGZO ferroelectric field electric transistors (FeFET) and 2T0C IGZO FET DRAM, considering device and material properties variation shows the potential of this model for circuit-level simulations for memory applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2390-2398"},"PeriodicalIF":2.9,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spurious-Free Shear Horizontal Surface Acoustic Wave Filters Based on 36Y-Cut LiNbO₃/SiO₂/Si Substrates","authors":"Yushuai Liu;Yiwei Wang;Xuankai Xu;Tao Wu","doi":"10.1109/TED.2025.3541598","DOIUrl":"https://doi.org/10.1109/TED.2025.3541598","url":null,"abstract":"High-performance surface acoustic wave (SAW) filters are essential for meeting modern demands for ubiquitous wireless connectivity and rapid data transmission. This study first explores the design and optimization of shear-horizontal-SAW (SH-SAW) multilayer resonators on 36Y-cut LiNbO3/SiO2/Si substrates, addressing spurious mode suppression, energy dispersion characteristics, and filter applications. To mitigate interference between the transverse and longitudinal modes, a new tilted interdigital transducer (IDT) design and the reflector period ratio <inline-formula> <tex-math>${lambda }_{R}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${lambda }lt {1}$ </tex-math></inline-formula> were implemented. Dispersion analysis identified the optimal wavelength for mode suppression at <inline-formula> <tex-math>$1.8~mu $ </tex-math></inline-formula>m, addressing out-of-band (OoB) interference from Rayleigh and high-order SH (SH1) modes. Studies of phase velocity (<inline-formula> <tex-math>${v}_{p}$ </tex-math></inline-formula>) and energy distribution revealed that metal layers significantly affect acoustic energy dissipation, reducing <inline-formula> <tex-math>${v}_{p}$ </tex-math></inline-formula> and quality factor (Q) at higher frequencies than 2 GHz. These findings were finally applied to design a spurious-free filter with a center frequency near 2 GHz and a fractional bandwidth (FBW) of 9.9%, demonstrating its potential for high-performance acoustic filters in communication systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1961-1968"},"PeriodicalIF":2.9,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on Domain Decomposition Method Based on the FETI-DP Algorithm in EOS and MFS","authors":"Xiao-Bing Wang;Quan Hu;Xiao-Fang Zhu;Yu-Lu Hu;Bin Li","doi":"10.1109/TED.2025.3549397","DOIUrl":"https://doi.org/10.1109/TED.2025.3549397","url":null,"abstract":"The electron optics simulator (EOS) and the magnetic focusing simulator (MFS), part of the microwave tube simulator suite (MTSS), use the finite element method (FEM) to calculate electrostatic fields, electron trajectories, and magnetic fields in both 2-D and 3-D models. With the growing demand for high-precision and multiscale computations, EOS and MFS are required to handle problems with numerous meshes, leading to a sharp increase in the number of unknowns in the matrix equation. To tackle this challenge, EOS and MFS have implemented the domain decomposition method (DDM) based on the dual-primal finite element tearing and interconnecting (FETI-DP) algorithm, which is well-suited for parallel computation and is expected to enhance solving efficiency for large-scale analysis. This article presents the implementation and the computational performance of the FETI-DP algorithm in EOS and MFS. Test results show that the FETI-DP algorithm offers significant advantages in computational time in most cases. Additionally, tests demonstrate that EOS and MFS can perform parallel computing, enabling the analysis of large-scale 2-D axisymmetric electron optics systems and significantly accelerating computation speed.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2568-2576"},"PeriodicalIF":2.9,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bias-Free Operational UTC-PD Pair for Optoelectronic Mixing","authors":"JiHong Ye;YongQing Huang;MingXi Yang;Shuhu Tan;Xiaomin Ren","doi":"10.1109/TED.2025.3547701","DOIUrl":"https://doi.org/10.1109/TED.2025.3547701","url":null,"abstract":"This study presents the first demonstration of a two-element uni-traveling carrier photodiodes (UTC-PDs) pair for optoelectronic mixing in wireless communication, utilizing bias-free operational UTC-PDs to effectively reduce system power consumption and complexity. One UTC-PD in the system converts the intermediate frequency (IF) signal into a bias modulation signal, which is then directed to a second UTC-PD that processes the local oscillation (LO) signal to achieve optoelectronic mixing. We achieved optoelectronic mixing with LO and IF signal frequencies of 20 and 2 GHz, respectively, resulting in a conversion loss (CL) of 21.9 dB at zero bias voltage.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2406-2410"},"PeriodicalIF":2.9,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly Sensitive Piezotronic p-n and n-p Heterojunction Diodes as Wearable Pressure Sensors","authors":"Emad Iranmanesh;Shuxin Lin;Lin Zhao;Weiwei Li;Charalampos Doumanidis;Hang Zhou;Kai Wang","doi":"10.1109/TED.2025.3546934","DOIUrl":"https://doi.org/10.1109/TED.2025.3546934","url":null,"abstract":"This article details a comparison between all-inorganic thin-film piezotronic p-n/n-p heterojunction diodes as wearable pressure sensors, with a comprehensive exploration of how the p-n junction outperforms the n-p junction, addressing fabrication and interface engineering impacts. Both configurations are considered as signal-mediated devices (current and voltage) and demonstrate proper amplification along with high signal-to-noise-ratio (SNR) which is highly desirable in wearable sensory units. Analytical modeling, equivalent circuit, and energy band diagrams elaborate their working principle and justify high sensitivity of devices. A preliminary experimental study on single-pixel devices testifies priority of the p-n junction diode. Owing to ease of large-scale fabrication, a wearable sensory system has also been tested through integration of a pixelated array of piezotronic p-n heterojunction diodes and an acquisition board.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2536-2543"},"PeriodicalIF":2.9,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10931784","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental Validation of Current Distribution in Intense Relativistic Electron Beams From a Coaxial Dual-Ring Cathode","authors":"Xingfu Gao;Lili Song;Junpu Ling;Fanbo Zeng;Xinbing Cheng;Rong Chen;Lei Wang;Juntao He","doi":"10.1109/TED.2025.3548999","DOIUrl":"https://doi.org/10.1109/TED.2025.3548999","url":null,"abstract":"This article presents a comprehensive simulation study and the first experimental investigation of a coaxial nested dual-ring cathode (CNDC) for dual-frequency high-power microwave (HPM) generation. Operating under a low solenoidal guiding magnetic field of 0.6 T, the CNDC successfully emitted and transmitted dual-ring intense relativistic electron beams (IREBs) with high transmission efficiencies. The experimental results closely validated the predictions of particle-in-cell (PIC) simulations, with total emission currents measured at approximately 15.8 kA, aligning well with the 15.6 and 15.5 kA predicted by the 2-D and 3-D simulations, respectively. Furthermore, the experimentally observed beam current distribution between the outer and inner rings closely adhered to design expectations, demonstrating the stability and reliability of the CNDC for dual-frequency HPM applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2577-2583"},"PeriodicalIF":2.9,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Over 1.3-kV β-Ga₂O₃ Vertical UMOSFET With High Concentration of N-Ion Implantation and Activation Annealing Temperature","authors":"Zhili Zou;Xiaodong Zhang;Chunhong Zeng;Tiwei Chen;Gaofu Guo;Botong Li;Zhucheng Li;Yongjian Ma;Xuanze Zhou;Guangwei Xu;Shibing Long;Zhongming Zeng;Baoshun Zhang","doi":"10.1109/TED.2025.3549403","DOIUrl":"https://doi.org/10.1109/TED.2025.3549403","url":null,"abstract":"In this article, we investigated the electrical characteristics of the high-voltage <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-gallium oxide (Ga2O3) vertical U-shaped trench gate MOSFETs (UMOSFETs) based on a current blocking layer (CBL) under varying nitrogen ions implantation concentrations and activation annealing temperatures. When the nitrogen ions implantation concentration is <inline-formula> <tex-math>$4times 10^{{19}}$ </tex-math></inline-formula> cm−3 and the activation annealing temperature is 1200 °C, the fabricated device achieved the highest breakdown voltage (<inline-formula> <tex-math>${V} _{text {br}}$ </tex-math></inline-formula>) exceeding 1.3 kV without field plates, while obtaining an <sc>on</small>-resistance (<inline-formula> <tex-math>${R} _{text {on}}$ </tex-math></inline-formula>) of 132.35 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula> cm2. Additionally, at a nitrogen ions implantation concentration of <inline-formula> <tex-math>$2times 10^{{19}}$ </tex-math></inline-formula> cm−3 and an activation annealing temperature of 1100 °C, the device achieved a <inline-formula> <tex-math>${V} _{text {br}}$ </tex-math></inline-formula> of 985 V, R<inline-formula> <tex-math>$_{text {on}}$ </tex-math></inline-formula> of 24.37 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula> cm2, and a power figure-of-merit (PFOM) of 40 MW/cm2. Our findings indicate that the current blocking capability of the CBL and Vbr improved with the increase in nitrogen ions implantation concentration and activation annealing temperature, while an increase in device R<inline-formula> <tex-math>$_{text {ON}}$ </tex-math></inline-formula> was observed. Overall, this work demonstrates the potential for achieving high-performance <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 UMOSFETs with nitrogen ions implantation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2461-2466"},"PeriodicalIF":2.9,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}