IEEE Transactions on Electron Devices最新文献

{"title":"Silicon Nanotube FET-Based Bio-Plausible Tripartite Synapse With Neuromodulation Capability","authors":"Md Yasir Bashir;Shubham Sahay","doi":"10.1109/TED.2025.3590362","DOIUrl":"https://doi.org/10.1109/TED.2025.3590362","url":null,"abstract":"Realizing biomimetic synapses on hardware is crucial for enabling realistic learning and memory processes akin to the human brain in neuromorphic computing systems. The overall energy efficiency can be increased significantly, and adaptive learning and context-aware decision-making can be enabled in these systems by replicating both the plasticity and the neuromodulation capability of the biological synapses. Although several emerging nonvolatile memories exhibit synaptic plasticity, an ultrascaled bio-plausible hardware synapse with neuromodulation capability is still elusive. To this end, in this work, for the first time, we propose a highly scalable nanotube (NT) FET-based tripartite synapse that exhibits both plasticity and neuromodulation capability simultaneously. While the proposed synaptic element exploits the lateral band-to-band-tunneling (L-BTBT) gate-induced drain leakage (GIDL) mechanism for mimicking plasticity, its core gate facilitates precise modulation of the postsynaptic current (PSC) similar to the neuromodulation by astrocytes. We show that the proposed synaptic element exhibits a large dynamic range (DR), a high degree of neuromodulation, and ultralow programming energy, making it suitable for online learning.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4669-4678"},"PeriodicalIF":3.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144904713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Understanding the Role of Shape Imperfections on the Bit Error Rates of STT-MRAM Under External Magnetic Fields","authors":"Sonalie Ahirwar;Ankit Kumar;Simon Van Beek;Susheel Kumar Arya;Dimitri Linten;Kurt Wostyn;Gouri Sankar Kar;Tanmoy Pramanik","doi":"10.1109/TED.2025.3589985","DOIUrl":"https://doi.org/10.1109/TED.2025.3589985","url":null,"abstract":"The bit error rate (BER) of spin-transfer-torque magnetic random access memory (STT-MRAM) under active write mode is measured in the presence of external magnetic fields of varying magnitude and orientation. Experimentally measured BER is then compared with macrospin and micromagnetic models to understand the observed dependence of BER on the magnetic field orientation. The results reveal a significant increase in the BER for specific polar orientations of the external magnetic field, confirming the recent theoretical prediction and experimental reports. Shape imperfections in magnetic tunnel junction (MTJ) nanopillars also significantly impact the BER variation. In-plane orientations of the external magnetic fields are also observed to impact BER variations, which indicate the loss of circular symmetry of the studied MTJ devices. The measured BER asymmetry could be explained once shape imperfections are considered in the model. These findings offer valuable insights into the active write magnetic immunity of STT-MRAM, particularly for cache applications demanding fast write speeds and ultralow BERs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4890-4895"},"PeriodicalIF":3.2,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"WOx Interlayer Engineering for Reliable Polarization in HfZrO2 Ferroelectric Capacitors","authors":"Eunjin Kim;Hyoungjin Park;Jiae Jeong;Seokjae Lim;Kibong Moon;Jiyong Woo","doi":"10.1109/TED.2025.3589521","DOIUrl":"https://doi.org/10.1109/TED.2025.3589521","url":null,"abstract":"Post-metallization annealing, even at a low temperature of <inline-formula> <tex-math>$350~^{circ }$ </tex-math></inline-formula>C, is essential to induce ferroelectricity in HfZrO2 (HZO) capacitors (FeCAPs). However, this process can also generate an unwanted oxide layer at the non-inert electrode interface. Our findings reveal that a thin substoichiometric WOx is formed on top of a W bottom electrode (BE) owing to the scavenging of oxygen ions from HZO. Oxygen vacancies (VOs) generated near the HZO/BE interface cause dipole rotation, rendering the FeCAPs vulnerable to temperature and endurance cycling. We introduce a sputter-deposited amorphous WOx interlayer (IL) at the BE interface and examine the impact on ferroelectric polarization. In the HZO/WO<inline-formula> <tex-math>${}_{{2}.{4}}$ </tex-math></inline-formula> FeCAPs, many VOs in the IL can be clustered during endurance, causing breakdown at <inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula> cycles. However, when a nearly stoichiometric WO3 IL is used, the polarization with increased coercive voltage (<inline-formula> <tex-math>${V}_{c}$ </tex-math></inline-formula>) is observed only at a low frequency. This indicates that most of the voltage drop occurs across the insulating WO3 IL rather than across HZO, showing weak remnant polarization (Pr). The optimized WO<inline-formula> <tex-math>${}_{{2}.{8}}$ </tex-math></inline-formula> IL suppresses VOs generation, serving as charge trapping sites near the BE interface and promoting the formation of an orthorhombic phase in HZO, enhancing Pr to <inline-formula> <tex-math>$29~mu $ </tex-math></inline-formula>C/cm2 over <inline-formula> <tex-math>$10^{{8}}$ </tex-math></inline-formula> cycles. Additionally, unlike the HZO FeCAPs, in which the ferroelectric properties deteriorate at cryogenic temperatures, a Pr greater than <inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>C/cm2 at 123 K can be achieved using HZO/WO<inline-formula> <tex-math>${}_{{2}.{8}}$ </tex-math></inline-formula> FeCAPs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4878-4883"},"PeriodicalIF":3.2,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultraviolet Irradiation-Induced High Performance InZnO Thin-Film Transistors and Optoelectronic Synapse Devices","authors":"Li Zhu;Yi Xia;Yuanfeng Zhao;Pengyu Chen;Xiang Wan;Chee Leong Tan;Huabin Sun;Shancheng Yan;Yong Xu;Zhihao Yu","doi":"10.1109/TED.2025.3590363","DOIUrl":"https://doi.org/10.1109/TED.2025.3590363","url":null,"abstract":"This article reports a high performance amorphous InZnO thin-film transistor (a-IZO TFT) and optoelectronic synapse device through a short-duration ultraviolet-ozone (UV-Ozone) treatment process. After UV-Ozone optimization, the IZO TFT demonstrates a high mobility of 28.42 cm2/V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>s at a low operating voltage of 3 V, with a subthreshold swing (SS) as low as 89.2 mV/dec and an <inline-formula> <tex-math>${I}_{mathrm {on}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${I}_{mathrm {off}}$ </tex-math></inline-formula> ratio up to <inline-formula> <tex-math>$2.56times 10^{{8}}$ </tex-math></inline-formula>. Based on this IZO transistor, a resistive-load inverter was constructed, showing ideal swing characteristics and a high voltage gain of 22 at 3.5 V. Furthermore, using this inverter, received optical signals were converted into voltage signals, achieving important visual synaptic functions such as excitatory postsynaptic potential (EPSP), paired-pulse facilitation (PPF), short-term to long-term memory (LTM) transitions, and image array memory. Finally, based on optical synaptic relaxation dynamics, reservoir computing (RC) simulations achieved a speech recognition rate of 91%. These results highlight the immense potential of this a-IZO TFT for applications in display driving, neuromorphic systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4991-4997"},"PeriodicalIF":3.2,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrothermal Modeling of GaAs Nanoridge Laser Diodes","authors":"David Coenen;Bjorn Vermeersch;Huseyin Sar;Ping-Yi Hsieh;Debi Prasad Panda;Herman Oprins;Joris Van Campenhout","doi":"10.1109/TED.2025.3588465","DOIUrl":"https://doi.org/10.1109/TED.2025.3588465","url":null,"abstract":"This article presents an electrothermal model for a InGaAs/GaAs quantum well (QW) nanoridge (NR) laser diode monolithically integrated in a Si photonics wafer. Heat conduction inside the laser is modeled using both the finite element (FE) method and the Boltzmann transport equation (BTE) for phonon transport. The BTE model captures nanoscale thermal effects and is used to calibrate the FE model, which captures large-scale effects, such as heat spreading in the Si substrate. Two methods are used to obtain the power distribution inside the laser: first, electrical TCAD simulation is carried out for the p-i-n structure and second, an equivalent electrical circuit is extracted from measurement data. The simulation results of the different thermal and electrical models are compared and finally experimentally validated using spectral measurements. We conclude that the simulated laser thermal resistance <inline-formula> <tex-math>${R}_{text {th, {sim}}}={74}pm {8}.{9}$ </tex-math></inline-formula> mm-K/W is in good agreement with the experiments <inline-formula> <tex-math>${R}_{text {th, {exp}}}={78}.{2}pm {15}.{2}$ </tex-math></inline-formula> mm-K/W; furthermore, the model predicts a local hot spot at the p-contact, which is a bottleneck for laser reliability. This insight will drive future design iterations.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"5038-5044"},"PeriodicalIF":3.2,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ion/ Ioff Characteristic Improvement Induced by Ron Reduction for FDSOI nMOSFETs","authors":"Jiu-He Wang;Jingya Cao;Yu-Long Jiang","doi":"10.1109/TED.2025.3589532","DOIUrl":"https://doi.org/10.1109/TED.2025.3589532","url":null,"abstract":"This work demonstrates a comprehensive methodology to effectively reduce the <sc>on</small>-state resistance (<inline-formula> <tex-math>${R}_{text {on}}$ </tex-math></inline-formula>) for nMOSFETs based on 22-nm fully depleted silicon-on-insulator (FDSOI) technology. By reducing the second spacer thickness (<inline-formula> <tex-math>${t}_{text {Sp2}}$ </tex-math></inline-formula>), enlarging the nickel silicide contact window, and increasing the silicide contact volume, a 6.4% reduction of <inline-formula> <tex-math>${R}_{text {on}}$ </tex-math></inline-formula> is achieved. Furthermore, minimizing the overetch depth (<inline-formula> <tex-math>${d}_{text {OE}}$ </tex-math></inline-formula>) of the contact via increases the contact area between tungsten plug and nickel silicide, resulting in a 7.7% reduction of <inline-formula> <tex-math>${R}_{text {on}}$ </tex-math></inline-formula>. To prevent oversilicidation in narrow width devices, the nickel deposition thickness (<inline-formula> <tex-math>${t}_{text {Ni}}$ </tex-math></inline-formula>) and the first step silicidation annealing time are reduced. Through the co-optimization of these process modifications, FDSOI nMOSFETs with 5% improvement of <inline-formula> <tex-math>${I}_{text {on}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${I}_{text {off}}$ </tex-math></inline-formula> are achieved.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4655-4661"},"PeriodicalIF":3.2,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144904785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Physics-Based SPICE Model of Slant Field Plate GaN HEMTs","authors":"Md Hasnain Ansari;Avinash Lahgere;Sheikh Aamir Ahsan;Yogesh Singh Chauhan","doi":"10.1109/TED.2025.3590356","DOIUrl":"https://doi.org/10.1109/TED.2025.3590356","url":null,"abstract":"This article introduces a SPICE-compatible compact model for GaN HEMTs with slant field plates (FPs), implemented using the ASM-HEMT framework. The slant FP geometry, critical for optimizing electric field distribution and breakdown performance, is approximated as a multistep gate FP structure. It is shown that conventional HEMT models using normal gate FPs fail to accurately capture the capacitance behavior of these devices. To address this limitation, a new modeling methodology is developed within the ASM-HEMT framework. This approach ensures accurate simulation of device behavior while maintaining computational efficiency. Validated against TCAD simulations and experimental data, the model demonstrates strong agreement across pulsed I–V, C–V, and large-signal RF load–pull characteristics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4780-4787"},"PeriodicalIF":3.2,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reservoir Computing Based on ZnWO4-x/WO3-x Heterojunction Optoelectronic Memristor for Time-Series Data and Static Image Processing","authors":"Di Zhang;Ruidong Li;Xiaofeng Zou;Haotian Meng;Qi Liu;Yang Li;Chunwei Zhang","doi":"10.1109/TED.2025.3584318","DOIUrl":"https://doi.org/10.1109/TED.2025.3584318","url":null,"abstract":"The nonlinear, dynamic, and memory characteristics, as well as synaptic properties, make memristors particularly suitable for reservoir computing. In this work, a novel optoelectronic memristor of a heterojunction structure is fabricated. Based on that device, reservoir computing systems are further implemented to improve the recognition accuracy of time-series data and optimize the operating complexity of the system, respectively. Specifically, the memristor features an Ag/ZnWO4-x/WO3-x/ITO structure, which can exhibit great synaptic properties, as well as obvious nonlinear I–V characteristics and high resistance ratios under electrical modulations. By integrating the memristor with mask technology, a basic reservoir unit can be obtained. With a parallel interconnection of the units, a reservoir system for time-series data processing is constructed, which achieves a high accuracy rate of 96.84% in heart arrhythmia detections. In addition to electrical performance, the memristor also presents good optical responses due to the contribution from the ZnWO4-x and WO3-x functional layers. The distinct and stable conductance states under ultraviolet (UV) light excitations help to extend reservoir states and thereby realize a pure optical reservoir computing system. Compared to traditional optoelectronic hybrid systems, the pure optical system can obviously lower the operating complexity since it relies solely on optical modulation. Taking a static image recognition task as an example, the accuracy of the pure optical system reaches as high as 92.73%. This work provides a new type of memristor and instances to achieve high-performance and simple reservoir systems, which may offer innovative insight for advanced reservoir computing.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"5017-5023"},"PeriodicalIF":3.2,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance Neuromorphic Phototransistors Based on Electrospinning-Driven La-Doped Indium Oxide Nanofibers","authors":"Qian Gao;Gang He;Bo He;Yanmei Liu;Yongli He;Shanshan Jiang;Huanhuan Wei;Can Fu","doi":"10.1109/TED.2025.3589341","DOIUrl":"https://doi.org/10.1109/TED.2025.3589341","url":null,"abstract":"The development of high-performance neuromorphic phototransistors plays a fundamental role in advancing image perception systems by enabling low-latency, event-driven light sensing and accelerating the training of memory-efficient deep neural networks. Here, artificial synaptic phototransistors with synaptic plasticity are fabricated based on La-doped In2O3 nanofibers (InLaO NFs), demonstrating an integrated artificial synapse that mimics both central and visual neural functions. The device exhibits not only exceptional electrical performance, with a high field-effect mobility of 7.70 cm2V<inline-formula> <tex-math>${}^{-{{1}}}$ </tex-math></inline-formula>s<inline-formula> <tex-math>${}^{-{{1}}}$ </tex-math></inline-formula>, an ultralarge <sc>on</small>/<sc>off</small> current ratio (<inline-formula> <tex-math>$gt 1times 10^{{8}}$ </tex-math></inline-formula>), but also a strong photoresponse of 28.2 nA under light illumination. Through excitatory response modes, fundamental biological functions, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and the transition from short-term plasticity (STP) to long-term plasticity (LTP), are simulated by the synaptic transistor. Furthermore, in optoelectronic co-modulation, the high synaptic weights enable the device to emulate complex neural learning rules relevant to neuromorphic applications, such as classically conditioned reflexes and image recognition tasks. These results highlight the potential of InLaO NFs-based synaptic transistors as promising candidates for bio-inspired synaptic devices and advanced neuromorphic systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4969-4975"},"PeriodicalIF":3.2,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Serial–Parallel Mixing-Mode Matrix–Vector Multiplication Architecture for Large-Scale In-Storage Computing With Ultrahigh Parallelism in nand Flash Memories","authors":"Yu-Yu Lin;Feng-Min Lee;Pei-Ying Du;Chih-Chieh Lin;Chih-Chang Hsieh;Ming-Hsiu Lee","doi":"10.1109/TED.2025.3585482","DOIUrl":"https://doi.org/10.1109/TED.2025.3585482","url":null,"abstract":"A novel mixing-mode in-storage-computing (iSC) architecture is proposed and derived as an efficient and promising approach for large-scale matrix– vector multiplication (MVM) operation. It was demonstrated through both 2-D CMOS-compatible SONOS <sc>nand</small> flash and 96-layers 3-D <sc>nand</small> flash memories. The sum-of-product (SoP) results are achieved by summing the input-weight products from all the series-connected cells in each <sc>nand</small> string and then combining the results from multiple blocks on the same bitline. Multiple <sc>nand</small> cells and multiple resistance states per cell can be utilized to represent multilevel weight values. Two approaches are proposed to eliminate the architecture-induced variation through analyzing the steady-state equivalent resistance. High MVM computing capabilities with typical memory chip power consumption are achieved, which exploit the potential of <sc>nand</small> flash devices in executing large-scale neural network models.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4837-4843"},"PeriodicalIF":3.2,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}