IEEE Transactions on Electron Devices最新文献

{"title":"Degradations of Multijunction Solar Cell Revealed by Absolute Electroluminescence Imaging","authors":"Panpan Yang;Youyang Wang;Qiao Huang;Deyang Qin;Jianing Zhang;Wenjie Zhou;Guoen Weng;Xiaobo Hu;Junhao Chu;Hidefumi Akiyama;Shaoqiang Chen","doi":"10.1109/TED.2025.3546586","DOIUrl":"https://doi.org/10.1109/TED.2025.3546586","url":null,"abstract":"Multijunction solar cells (MJSCs) experience material degradation and reduced efficiency during long-term storage. Current defect analysis methods for III-V compound MJSCs are limited by a lack of intuitive tools and in-depth understanding, hindering improvements in yield and efficiency. Absolute electroluminescence (EL) is a powerful technique for visualization and predicting solar cell performance. In this study, we applied absolute EL to quantify performance and degradation mechanisms in subcells after 26 months of storage. Absolute EL imaging identified both potential and inherent defect types within the subcells. The detailed analysis of localized defect points showed reduced photon emission near the defect points. Using the reciprocity theorem and carrier balance model, we found that degradation in the InGaP/GaAs/InGaAs solar cell resulted in a 0.8% reduction in efficiency, largely due to nonradiative recombination (NR) losses. Additionally, the efficiencies of top, middle, and bottom cells decreased by reduced by 0.3%, 0.2%, and 0.3%, respectively. This work demonstrates that the absolute EL imaging technique provides a comprehensive and detailed method for understanding defects and energy losses during long-term storage in MJSC.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1857-1863"},"PeriodicalIF":2.9,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing","authors":"D. Yadav;H. Levenne;S. Stathopoulos;R. Ramesh;S. Kumar;T. Prodromakis","doi":"10.1109/TED.2025.3547291","DOIUrl":"https://doi.org/10.1109/TED.2025.3547291","url":null,"abstract":"In this study, we report binary resistive and capacitive switching in hafnium oxide (HfOX) memristors. Given that annealed devices are widely recognized in the literature for exhibiting improved switching properties, we compared the behavior of as-deposited and annealed samples. Both devices exhibit pinched hysteresis with bipolar switching; however, annealed devices show significantly enhanced <sc>ON</small>/<sc>OFF</small> ratios for both resistive (1:100) and capacitive (1:3) states. The enhanced performance is attributed to post-deposition annealing at 400 °C, which induces a monoclinic phase and hence results in a film that exhibits a mixed amorphous and crystalline phase. To investigate the dynamic, frequency-dependent characteristics of these devices, we performed impedance spectroscopy (IS) analysis to get a Bode and Nyquist plots. The Bode plot indicates that these devices function as tuneable low-pass filters, with as-deposited devices providing a bandwidth of 0.82 MHz and annealed devices exhibiting a significantly expanded bandwidth of 9.43 MHz. The Nyquist plots reveal the presence of a constant phase element (CPE) in both devices, with a stronger presence in annealed devices. The modeled parameters align well with experimental data within acceptable error margins. In addition, LTspice simulations verify the model and the presence of nonideal parameters. Our comprehensive study underscores the potential of HfOX memristors as reliable and tuneable memcapacitors, exhibiting improved performance for annealed devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2271-2277"},"PeriodicalIF":2.9,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Mechanical Stress on Electrical Characteristics of IGZO-Based Integrated 1T1M on Flexible Substrate","authors":"Seung Joo Myoung;Hyunkyu Lee;Dong Hyeop Shin;Youngjin Seo;Wonjung Kim;Jung Rae Cho;Changwook Kim;Jong-Ho Bae;Sung-Jin Choi;Dong Myong Kim;Ickhyun Song;Dae Hwan Kim","doi":"10.1109/TED.2025.3550465","DOIUrl":"https://doi.org/10.1109/TED.2025.3550465","url":null,"abstract":"In this study, indium-gallium-zinc oxide (InGaZnO, IGZO) thin-film transistors (TFTs) and memristors are integrated as one transistor-one memristor (1T1M) structure on flexible substrate, and its electrical characteristics are analyzed. The fabrication process includes the formation of IGZO TFTs on flexible substrates and the deposition of memristors on top of TFTs. For the integrated structure, mechanical stress testing with various bending radius (10 and 15 mm) and bending cycles (0, 10, 100, and 200 times) were applied, considering the flexibility of the substrate. Experimental results show that as the bending radius decreased and the bending cycles increased, the conductivity of the 1T1M structure was negatively affected. In particular, with a bending radius of 10 mm, the electrical characteristics of the transistor significantly were degraded, exhibiting reduced conductivity. Degradations in conductivity led to noticeable performance loss in the accuracy of Modified National Institute of Standards and Technology (MNIST) database pattern-recognition simulations, indicating significant impact on the reliability of flexible electronic devices. This study provides valuable insights into material and structural design for enhancing the overall characteristics of flexible neuromorphic computing applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2374-2380"},"PeriodicalIF":2.9,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases","authors":"Ling Lv;Changjuan Guo;Muhan Xing;Xuefeng Zheng;Yanrong Cao;Peipei Hu;Jie Liu;Xiaohua Ma;Yue Hao","doi":"10.1109/TED.2025.3550111","DOIUrl":"https://doi.org/10.1109/TED.2025.3550111","url":null,"abstract":"The single-event effects (SEEs) of AlGaN/GaN HEMT devices under <sc>off</small>-state, semi-<sc>on</small>-state, and <sc>on</small>-state are systematically investigated from experiments and TCAD simulations. Experimental results show that heavy ion radiation causes the most serious damage to the devices under the <sc>off</small>-state. Three regions of nondestructive, leakage degradation, and catastrophic failures induced by SEE are observed as drain-to-source voltage increases. The simulation results show that the peak electric field is largest under the <sc>off</small>-state and the current collection is more significant at high-voltage bias, further confirming the severity of the SEE in the <sc>off</small>-state. It has been shown that high single-event transient currents under the <sc>off</small>-state can cause permanent damage to the device, leading to an increase in device leakage current.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2467-2473"},"PeriodicalIF":2.9,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonvolatile Capacitive Synapse Utilizing Polar Topological States for Computing-in-Memory","authors":"Hyeongu Lee;Mincheol Shin","doi":"10.1109/TED.2025.3542751","DOIUrl":"https://doi.org/10.1109/TED.2025.3542751","url":null,"abstract":"In this work, the ferroelectric capacitor utilizing polar topological states is proposed for the capacitive synapse device in compute-in-memory (CIM). Three-dimensional phase-field simulations coupled with the Poisson and Navier-Cauchy equations are conducted for SrTiO3/PbTiO3/SrTiO3 capacitor as the host system of polar topological states. Using the state-of-the-art in-house tool developed for the purpose, we theoretically demonstrate that the multiple topological states can be programmed with low write voltage (<inline-formula> <tex-math>$leq 1$ </tex-math></inline-formula> V). The pulse schemes are proposed to write the multiple states. We show that more than 2-bit nondestructive read-out (NDRO) with the <sc>on/off</small> ratio of at least 3.7 can be achieved. These results provide strong evidence that the ferroelectric capacitor utilizing the polar topological states is a promising candidate for capacitive synapse devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2265-2270"},"PeriodicalIF":2.9,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of 1T-DRAM Based on Novel Triple-Gate Nanosheet RFET With Surrounded SiGe Channel","authors":"Xinyu Zou;Fu Gong;Mengge Jin;Ziyu Liu;Xiaojin Li;Yang Shen;Bingyi Ye;Yuhang Zhang;Yanling Shi;Shaoqiang Chen;Yabin Sun","doi":"10.1109/TED.2025.3549398","DOIUrl":"https://doi.org/10.1109/TED.2025.3549398","url":null,"abstract":"In this study, a capacitorless 1T-DRAM based on a novel triple-gate nanosheet reconfigurable field effect transistor (RFET) with surrounded SiGe channel (SC-RFET) is first proposed. Due to the additional SiGe storage area under the control gate (CG) and applying positive or negative bias voltages to regulate the injection or extraction of holes from the SiGe storage area, the proposed SC-RFET exhibits significant performance enhancement, particularly in terms of improving sense margin and retention time (RT). Compared to the case based on the traditional triple-gate RFET (TG-RFET) at the room temperature of <inline-formula> <tex-math>$27~^{circ }$ </tex-math></inline-formula>C, the sense margin of 1T-DRAM based on SC-RFET shows nearly an order of magnitude improvement (from 32.29 to <inline-formula> <tex-math>$316.7~mu $ </tex-math></inline-formula>A/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m), the current ratio increases about three orders of magnitude (from <inline-formula> <tex-math>$1.465times 10^{{5}}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$1.078times 10^{{8}}text {)}$ </tex-math></inline-formula>, and the RT also increases from 1.35 to 99.5 s. Notably, even at <inline-formula> <tex-math>$150~^{circ }$ </tex-math></inline-formula>C, the RT of our novel 1T-DRAM remains stable at 1.245 s, showcasing the robustness of the proposed RFET. Furthermore, the proposed 1T-DRAM also demonstrates a rapid read time of 2 ns and a write time of 1 ns. Detailed analysis is performed from device physics and operation, and guidelines design of 1T-DRAM cell are presented.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2292-2298"},"PeriodicalIF":2.9,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Memristor-Based Infrared Reservoir Computing System for Dynamic Target Perception With Spatial–Temporal Features","authors":"Yiduo Xie;Wenbo Luo;Zebin Zhao;Qin Xie;Jiejun Wang;Xinqiang Pan;Yao Shuai;Chuangui Wu;Wanli Zhang","doi":"10.1109/TED.2025.3549386","DOIUrl":"https://doi.org/10.1109/TED.2025.3549386","url":null,"abstract":"The rapid expansion of the Internet of Things (IoT) necessitates unprecedented resource efficiency in sensor-edge hardware to implement artificial intelligence (AI). A memristor-based infrared reservoir computing (MIRC) system was proposed in this work, incorporating a physical mask, a pyroelectric infrared (PIR) sensor based on LiTaO3 (LT), and a memristor based on LiNiO3 (LN). The PIR sensor with the physical mask can encode spatiotemporal features into electrical signals with high data fidelity. Subsequently, the analog sensor signals can be directly fed to the delay-based memristor reservoir. It is worth mentioning that the memristor shows a large dynamic space with rich reservoir states and a nonlinear short-term memory effect, so that the spatiotemporal features of PIR signals can be mapped more finely to the conductance of the memristor. These advancements in memristor performance enhance the system’s ability to process complex spatiotemporal data, allowing for the perception of targets with varying sizes, velocities, and distances, with results indicating a high distinction for each target. Compared to conventional methods, this approach significantly saves hardware resources, minimizes data transmission requirements, and simplifies backend algorithmic processing, providing a promising framework for advancing IoT technologies with integrated AI capabilities at the sensor edge.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2299-2304"},"PeriodicalIF":2.9,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance ZrO₂/β-Ga₂O₃ (001) Metal–Insulator–Semiconductor Capacitors","authors":"Qihao Zhang;Jiangwei Liu;Dongyuan Zhai;Min He;Jiwu Lu","doi":"10.1109/TED.2025.3549382","DOIUrl":"https://doi.org/10.1109/TED.2025.3549382","url":null,"abstract":"In this study, we have fabricated high-performance metalinsulatorsemiconductor (MIS) capacitor using atomic layer-deposited ZrO2/beta-gallium oxide (<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3) (001) heterojunction. The energy band alignment for the ZrO2/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 heterojunction and electrical properties for the ZrO2/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 MIS capacitor are investigated. Valence band offset (<inline-formula> <tex-math>$Delta {E}_{V}$ </tex-math></inline-formula>) and conduction band offset (<inline-formula> <tex-math>$Delta {E}_{C}$ </tex-math></inline-formula>) for the ZrO2/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 heterojunction, determined by X-ray photoelectron spectroscopy (XPS) technique, are −0.42 and 1.42 eV, respectively. Its band alignment configuration exhibits a type II (staggered gap) structure. Gate leakage current and frequency-dependent capacitancevoltage (C–V) characteristics for the ZrO2/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 MIS capacitor are investigated. The ZrO2/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 MIS capacitor demonstrates a low gate leakage current. The PooleFrenkel (PF) conduction model is employed to elucidate the gate leakage current mechanism. No significant frequency dispersion is observed based on the frequency-dependent C–V characteristics. The fixed charge and trapped charge densities in the ZrO2 film are calculated to be <inline-formula> <tex-math>$7.9times 10^{{12}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$1.27times 10^{{12}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>, respectively. The minimum interface trapped charged density is extracted to be <inline-formula> <tex-math>$4.1times 10^{{10}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>$^{-{2}}cdot text { eV}^{-{1}}$ </tex-math></inline-formula> at an energy of 0.6 eV below the conduction band of <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3, representing the lowest reported value for the dielectric/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 (001) interface. These results indicate the formation of high-quality ZrO2 film on the <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3, making it a potential candidate as gate dielectrics in <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 power devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2207-2212"},"PeriodicalIF":2.9,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Power Spectral Density of Thermal Noise at Low Frequencies in Thermal Conductance","authors":"Kejun Xia","doi":"10.1109/TED.2025.3549738","DOIUrl":"https://doi.org/10.1109/TED.2025.3549738","url":null,"abstract":"We derive the power spectral density (PSD) of thermal flux fluctuation at low frequencies for a thermal conductance <inline-formula> <tex-math>${G}_{text {th}}$ </tex-math></inline-formula> based on the Green-Kubo relation for thermal conductivity and the heat equation under nonequilibrium conditions. The result is given by <inline-formula> <tex-math>${4}textit {kT}_{e}^{{2}}{G}_{text {th}}$ </tex-math></inline-formula>, where k is Boltzmann’s constant, and <inline-formula> <tex-math>${T}_{e}$ </tex-math></inline-formula>, the effective temperature, is shown to depend on the terminal temperatures of the thermal conductor and the temperature coefficient of thermal conductivity. In particular, if the thermal conductor is isothermal at temperature T, the flux fluctuation simplifies to the known <inline-formula> <tex-math>${4}textit {kT}^{{2}}{G}_{text {th}}$ </tex-math></inline-formula>. Using a polysilicon resistor as an example, we demonstrate that thermal noise arising from thermal conductance can exceed the noise from electrical conductance under certain conditions, which is driven by the self-heating effect (SHE).","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2153-2158"},"PeriodicalIF":2.9,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A C-Band Relativistic Backward Wave Oscillator Optimized by Multiobjective Algorithms","authors":"Yujie Xiang;Zhenxing Jin;Dian Zhang;Jun Zhang;Kaiqi Yang;Fugui Zhou","doi":"10.1109/TED.2025.3547815","DOIUrl":"https://doi.org/10.1109/TED.2025.3547815","url":null,"abstract":"The parameters of high-power microwave sources exhibit high sensitivity and discontinuity regarding their power efficiency, operation frequency, and other key performances. Currently, particle in cell (PIC) simulation in conjunction with intelligent optimization algorithms is frequently utilized to optimize device parameters but there is still the problem that fast power ramp-up and frequency control cannot be achieved at the same time. In pursuit of an effective resolution, this article undertakes a comparison of three major classes of evolutionary algorithms within the domain of artificial intelligence during the design process of a C-band relativistic backward wave oscillator (RBWO). Through a new design method of segmented optimization strategy using the OMOPSO and RSEA algorithms, a novel RBWO structure has been attained. This structure attains an output power of 2.3 GW, functions at a goal microwave frequency of 4.3 GHz, and achieves an energy conversion efficiency of 46% in simulation under a magnetic field of 0.28 T. This novel optimization strategy is characterized by rapid optimization speed and favorable optimization efficacy.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2561-2567"},"PeriodicalIF":2.9,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}