Hf0.2Zr0.8O2反铁电器件退化行为的紧凑模型

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-15 DOI:10.1109/TED.2025.3558484

Lijian Chen;Yaru Ding;Zeping Weng;Jianguo Li;Daolin Cai;Yi Zhao

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引用次数: 0

摘要

建立了一个紧凑的模型来描述Hf0.2Zr0.8O2 （HZO）反铁电（AFE）电容器的极化电压（P-V）和电流电压（I-V）特性的退化行为。证实了在场循环过程中，P-V和I-V特性的演化遵循与开关极化的Kohlrausch-Williams/Watts （KWWs）随机漫步弛豫行为相似的规律。在这两种特性中，电压移动的行为相反但相似，这表明电荷注入应该是观察到的极化印记的潜在机制。这种退化是由于界面层（IL）和电极之间的界面处电荷缺陷的增加。

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A Compact Model for Degradation Behaviors in Hf0.2Zr0.8O2 Anti-Ferroelectric Devices

A compact model is developed to describe degradation behaviors of the polarization-voltage (P–V) and current-voltage (I–V) characteristics in Hf0.2Zr0.8O2 (HZO) anti-ferroelectric (AFE) capacitors. It is confirmed that, during field cycling, the evolution of both P–V and I–V characteristics follows the similar rule related to the Kohlrausch-Williams/Watts (KWWs) random-walk relaxation behavior of the switching polarization. The opposite but similar behavior of voltage shift in both characteristics suggests that charge injection should be an underlying mechanism for the observed polarization imprint. The degradation is attributed to the increasing charge defects at the interface between interfacial layer (IL) and the electrode.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.