IEEE Transactions on Electron Devices

SCI期刊

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5473

中科院SCI期刊分区 WOS期刊分区历年影响因子历年发表投稿信息同类期刊

期刊缩写：

IEEE Trans. Electron Devices

影响因子：

2.9

ISSN：

print: 0018-9383

研究领域：

工程技术-工程：电子与电气

h-index：

165

自引率：

16.10%

Gold OA文章占比：

6.38%

原创研究文献占比：

99.36%

SCI收录类型：

Science Citation Index Expanded (SCIE) || Scopus (CiteScore)

期刊官网：

http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 http://eds.ieee.org/t-ed.html

期刊介绍英文：

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.

CiteScore：

CiteScore	SJR	SNIP	CiteScore排名
5.8	0.785	1.223	学科排名百分位大类：Engineering 小类：Electrical and Electronic Engineering 221 / 797 72% 大类：Materials Science 小类：Electronic, Optical and Magnetic Materials 82 / 284 71%