IEEE Transactions on Electron Devices最新文献

Fluorine Plasma-Treated ITO Transistors: Reliability and Temperature Dependence From 77 to 375 K 氟等离子体处理ITO晶体管：可靠性和温度依赖性从77到375 K

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-07-08 DOI: 10.1109/TED.2026.3706452

Xuanqi Chen;Yuye Kang;Gan Liu;Wei Shi;Xiaolin Wang;Qiwen Kong;Yuxuan Wang;Rui Shao;Bich-Yen Nguyen;Gengchiau Liang;Kaizhen Han;Xiao Gong

{"title":"Fluorine Plasma-Treated ITO Transistors: Reliability and Temperature Dependence From 77 to 375 K","authors":"Xuanqi Chen;Yuye Kang;Gan Liu;Wei Shi;Xiaolin Wang;Qiwen Kong;Yuxuan Wang;Rui Shao;Bich-Yen Nguyen;Gengchiau Liang;Kaizhen Han;Xiao Gong","doi":"10.1109/TED.2026.3706452","DOIUrl":"https://doi.org/10.1109/TED.2026.3706452","url":null,"abstract":"In this work, we demonstrated the fluorine (F) plasma-treated indium–tin–oxide field-effect transistors (ITO:F FETs) with channel lengths ranging from 40 nm to <inline-formula> <tex-math>$10~mu $ </tex-math></inline-formula>m. Their electrical characteristics and dark-state positive-bias-temperature-instability (PBTI) behavior were systematically investigated over a broad temperature range from 77 to 375 K. Our results show that the fluorine plasma treatment effectively tunes the threshold voltage (<inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula>) of indium–tin–oxide (ITO) field-effect transistors (FETs) while preserving strong drive current and normal switching behavior, consistent across devices with different channel lengths. Notably, the 40-nm ITO:F FET demonstrates excellent dark-state PBTI stability. After PBTI stressing up to 10 ks under an overdrive field (<inline-formula> <tex-math>${E}_{text {OX}}$ </tex-math></inline-formula>) of 2.5 MV/cm, the ITO:F FET exhibits threshold voltage shifts (<inline-formula> <tex-math>$Delta {V}_{text {TH}}$ </tex-math></inline-formula>) of 42 mV at 300 K. These findings highlight the potential of fluorine plasma treatment to improve the electrical characteristics and PBTI stability of ITO FETs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5099-5105"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Variable Gradient Mg-Doped p-GaN/AlGaN/GaN HEMT With Low Gate Leakage Current 低栅漏电流变梯度mg掺杂p-GaN/AlGaN/GaN HEMT

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-25 DOI: 10.1109/TED.2026.3703765

Kuo Zhang;Yunlong He;Chong Wang;Kai Liu;Jiahui Ren;Yuhan Luo;Yuchun Wu;Wentao Zhang;Xuefeng Zheng;Xiaohua Ma;Yue Hao

{"title":"Variable Gradient Mg-Doped p-GaN/AlGaN/GaN HEMT With Low Gate Leakage Current","authors":"Kuo Zhang;Yunlong He;Chong Wang;Kai Liu;Jiahui Ren;Yuhan Luo;Yuchun Wu;Wentao Zhang;Xuefeng Zheng;Xiaohua Ma;Yue Hao","doi":"10.1109/TED.2026.3703765","DOIUrl":"https://doi.org/10.1109/TED.2026.3703765","url":null,"abstract":"In this work, we propose a novel variable gradient Mg-doped p-GaN/AlGaN/GaN high-electron-mobility transistor (VD-HEMT) with a suppressed gate leakage current and enhanced gate reliability. The low-doped p-GaN layers at the top and bottom effectively weaken the high electric field on the surface of p-GaN and suppress the hole injection currents at the metal/p-GaN Schottky junction and the p-GaN/AlGaN/GaN p-i-n junction, while also inhibiting Mg diffusion toward the channel. The intermediate high-doped p-GaN layer blocks and recombines electrons overflowing from the channel, effectively reducing hot electron bombardment and impact ionization in the Schottky depletion region. The VD-HEMT achieved a low gate leakage of <inline-formula> <tex-math>$text{3.6}times text{10}^{-text{5}}$ </tex-math></inline-formula> mA/mm at <inline-formula> <tex-math>$textit{V}_{text{G}}=text{9}$ </tex-math></inline-formula> V, a high gate breakdown voltage of 19.7 V, and a maximum gate drive voltage of 9.46 V for a ten-year lifetime with a 63.2% gate failure rate. In addition, the high-doped p-GaN layer combined with the thin AlGaN barrier effectively increases the threshold voltage to 2.85 V without significant degradation in <sc>on-resistance or breakdown voltage, demonstrating great potential for high-reliability power electronics applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5154-5160"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-Mode Perovskite/GaN Tandem LEDs With Interlayer-Enabled Voltage-Dependent Color Tuning 双模钙钛矿/GaN串联led与层间启用电压依赖的颜色调谐

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-10 DOI: 10.1109/TED.2026.3699490

Yunfang Tong;Hao Min;Ting Zhi;Zhe Zhuang;Zili Xie;Rongrong Dou;Tao Tao;Bin Liu

{"title":"Dual-Mode Perovskite/GaN Tandem LEDs With Interlayer-Enabled Voltage-Dependent Color Tuning","authors":"Yunfang Tong;Hao Min;Ting Zhi;Zhe Zhuang;Zili Xie;Rongrong Dou;Tao Tao;Bin Liu","doi":"10.1109/TED.2026.3699490","DOIUrl":"https://doi.org/10.1109/TED.2026.3699490","url":null,"abstract":"Metal halide perovskites have emerged as promising candidates for light-emitting diodes (LEDs) owing to their superior optoelectronic properties and solution processability. However, the fabrication of perovskite-based multicolor or white LEDs remains challenging due to the difficulty in depositing multiple emissive layers without damaging underlying films. Here, we demonstrate a hybrid Pe-GaN tandem LED by vertically integrating a solution-processed perovskite LED (PeLED) with a commercial GaN LED using an indium tin oxide (ITO) interconnecting layer. A two-step annealing strategy is employed to optimize the perovskite film quality, yielding significantly enhanced photoluminescence and improved film morphology. Benefiting from the optimized perovskite layer, the PeLED unit achieves substantially enhanced electroluminescence (EL) performance, with a maximum external quantum efficiency (EQE) of 10.2% and a high luminance of 91,233 cd <inline-formula> <tex-math>${mathrm {m}}^{-{2}}$ </tex-math></inline-formula>. Furthermore, by employing two different interconnecting layer structures, we achieve voltage-controlled color tunability with distinct spectral evolution behaviors. By changing the interconnecting layer from ITO to SnO2 or Ag/SnO2, we transition from independent unit control to series-connected color tuning. This work introduces interlayer design as a new degree of freedom for expanding the color palette of Pe-GaN tandem LEDs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5005-5009"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Cox and Strack Measurements of Contact Resistivity for Low-Temperature Ohmic Contacts on the N-Face of GaN Substrates 氮化镓衬底n面低温欧姆接触接触电阻率的Cox和Strack测量

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-23 DOI: 10.1109/TED.2026.3704528

Daniel J. Rogers;Jeramy R. Dickerson;Jonathan J. Wierer

{"title":"Cox and Strack Measurements of Contact Resistivity for Low-Temperature Ohmic Contacts on the N-Face of GaN Substrates","authors":"Daniel J. Rogers;Jeramy R. Dickerson;Jonathan J. Wierer","doi":"10.1109/TED.2026.3704528","DOIUrl":"https://doi.org/10.1109/TED.2026.3704528","url":null,"abstract":"Contact resistivity measurements of ohmic contacts to the nitrogen face (N-face) of n-type GaN substrates are determined using the Cox–Strack method. The contacts consist of sputtered Ti/W formed on two substrates with root-mean-square (rms) roughness of ~100 nm (rough) and ~5 nm (smooth) on the N-face. This is followed by the e-beam-evaporated Al and Al/Ni/Au onto the rough and smooth samples, respectively. The samples are tested as deposited and annealed at <inline-formula> <tex-math>$300^{circ }$ </tex-math></inline-formula>C, <inline-formula> <tex-math>$400~^{circ }$ </tex-math></inline-formula>C, and <inline-formula> <tex-math>$500~^{circ }$ </tex-math></inline-formula>C for 10 min. The contact resistivity for the as-deposited, smooth sample is <inline-formula> <tex-math>$1.1times 10^{-{4}}$ </tex-math></inline-formula> <inline-formula> <tex-math>$Omega$ </tex-math></inline-formula>-cm2, and that for the rough sample after a <inline-formula> <tex-math>$500~^{circ }$ </tex-math></inline-formula>C anneal is <inline-formula> <tex-math>$1.9times 10^{-5}~Omega {cdot }text {cm}^{2}$ </tex-math></inline-formula>. For all other conditions, they are Schottky. The barrier height of the rough sample is 254 meV, assuming the thermionic field emission (TFE) model. This work highlights the utility and limitations of the Cox–Strack method for determining low contact resistivities in vertical semiconductor devices and for forming these contacts at low temperatures, thereby easing process constraints.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4673-4678"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Decoupling the Competing Degradation Mechanisms in SiC MOSFETs Under Repetitive Avalanche: From Charge Trapping to Package Fatigue 重复雪崩下SiC mosfet竞争退化机制的解耦：从电荷捕获到封装疲劳

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-29 DOI: 10.1109/TED.2026.3697700

Yifan Song;Kun Ma;Yameng Sun;Xun Liu;Zhaofu Zhang;Yang Zhou;Sheng Liu

{"title":"Decoupling the Competing Degradation Mechanisms in SiC MOSFETs Under Repetitive Avalanche: From Charge Trapping to Package Fatigue","authors":"Yifan Song;Kun Ma;Yameng Sun;Xun Liu;Zhaofu Zhang;Yang Zhou;Sheng Liu","doi":"10.1109/TED.2026.3697700","DOIUrl":"https://doi.org/10.1109/TED.2026.3697700","url":null,"abstract":"Silicon carbide (SiC) MOSFETs are crucial in high-power density applications, but their long-term reliability under repetitive avalanche stress remains a significant concern. The evolution of <sc>on-resistance (<inline-formula> <tex-math>${R}_{text {DS}(textit {on})}$ </tex-math></inline-formula>) under such stress is complex and has been widely debated. Existing studies often rely on post-stress electrical characterization and therefore cannot directly resolve the transient thermal driver of degradation or experimentally decouple the competing device-level and package-level mechanisms. This approach allows the stress-dependent turning point of <inline-formula> <tex-math>${R}_{textit {DS}(textit {on})}$ </tex-math></inline-formula> to be intentionally shifted, enabling the experimental decoupling of early-stage hole-injection-induced resistance reduction in the junction field-effect transistor (JFET) region from late-stage thermomechanical-fatigue-induced increase at the bond-wire heel. Calibrated Technology Computer-Aided Design (TCAD), finite element analysis (FEA), and decapsulation-based failure analysis are further used to validate the proposed mechanism transition. These results establish a unified mechanistic framework linking stress severity, turning-point evolution, and failure mode, and provide a basis for more reliable degradation benchmarking and State-of-Health monitoring.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4756-4763"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Total-Ionizing Dose Effect in 3-D Charge-Trap nand Flash Memory Cells 三维电荷阱nand闪存单元的总电离剂量效应

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-11 DOI: 10.1109/TED.2026.3700153

Jounghun Park;Jungsik Kim;Vishwanath Shastry;Jeong-Soo Lee;Su-in Yi

{"title":"Total-Ionizing Dose Effect in 3-D Charge-Trap nand Flash Memory Cells","authors":"Jounghun Park;Jungsik Kim;Vishwanath Shastry;Jeong-Soo Lee;Su-in Yi","doi":"10.1109/TED.2026.3700153","DOIUrl":"https://doi.org/10.1109/TED.2026.3700153","url":null,"abstract":"Total-ionizing dose (TID) effects on programmed cells in 3-D charge-trap <sc>nand flash memory are investigated using technology-computer-aided design (TCAD) simulations calibrated to a commercial off-the-shelf (COTS) 176-layer 3-D <sc>nand flash memory. During retention, the surrounding electric field (<inline-formula> <tex-math>$E$ </tex-math></inline-formula>-field) enhances electron–hole pair (EHP) generation and induces hole trapping in the charge-trap layer (CTL), resulting in a reduction in the threshold voltage (<inline-formula> <tex-math>${V}_{T}text {)}$ </tex-math></inline-formula>. The blocking oxide (BOX) is more strongly affected by radiation due to its larger volume compared to the bandgap engineered (BE)-tunneling oxide (TOX). <inline-formula> <tex-math>${V}_{T}$ </tex-math></inline-formula> degradation becomes more pronounced with increasing total dose, particularly at higher program verifying (PV) levels. Moreover, <inline-formula> <tex-math>${V}_{T}$ </tex-math></inline-formula> state reliability by TID becomes more vulnerable on continued scaling of the gate and spacer lengths, below the word line pitch of 54 nm. Furthermore, BOX thickness introduces a tradeoff between retention and TID-induced <inline-formula> <tex-math>${V}_{T}$ </tex-math></inline-formula> degradation, where a thinner BOX improves the radiation hardness with a cost of time-dependent retention loss.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4834-4840"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A C-Band Relativistic Magnetron With a Slotted Circular Waveguide Extraction Structure 带开槽圆波导提取结构的c波段相对论磁控管

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-07-08 DOI: 10.1109/TED.2026.3707139

Zijun Huang;Tingxu Chen;Yanlin Deng;Fan Zhang;Bo Zhao;Biao Hu;Haiyang Wang;Hao Li;Tianming Li

引用次数: 0

Candidate Overtone Shear Horizontal SAW Resonators in Thin-Film Lithium Niobate for Intermodal Acousto-Optic Modulation 薄膜铌酸锂用于多模态声光调制的候选泛音剪切水平SAW谐振器

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-30 DOI: 10.1109/TED.2026.3705013

Wenbing Jiang;Xuankai Xu;Yu Guo;Boyu Zhang;Lihui Jin;Xiao Chen;Tao Wu;Libing Zhou

{"title":"Candidate Overtone Shear Horizontal SAW Resonators in Thin-Film Lithium Niobate for Intermodal Acousto-Optic Modulation","authors":"Wenbing Jiang;Xuankai Xu;Yu Guo;Boyu Zhang;Lihui Jin;Xiao Chen;Tao Wu;Libing Zhou","doi":"10.1109/TED.2026.3705013","DOIUrl":"https://doi.org/10.1109/TED.2026.3705013","url":null,"abstract":"The merits of thin-film surface acoustic wave (SAW) devices are pivotal to developing high-performance intermodal acousto-optic modulators. In this work, we have proposed shear-horizontal (SH) SAW resonators for anticipated intermodal acousto-optic modulation (AOM) on the thin-film lithium niobate (LN) platform. Through optimization of the cut angle of LN films, the SAW wavelength, and the thickness of interdigital transducer (IDT) electrodes, the calculated acousto-optic overlap factors utilizing SH0 modes are improved by more than an order of magnitude compared with those of Rayleigh modes. Furthermore, we have fabricated and characterized three kinds of proof-of-principle SH0 mode devices without/with grating reflectors (GRs). The electromechanical coupling coefficients (<inline-formula> <tex-math>$textit {k}_{substack {text {eff}}}^{substack {{2}}}$ </tex-math></inline-formula>) and quality factors (<inline-formula> <tex-math>$Q$ </tex-math></inline-formula>) in the overtone resonators with GRs are systematically evaluated, featuring the highest <inline-formula> <tex-math>$Q$ </tex-math></inline-formula> of 843 with the compromised <inline-formula> <tex-math>$textit {k}_{substack {text {eff}}}^{substack {{2}}}$ </tex-math></inline-formula> of 0.96%–4.72%. The results reveal that the temperature coefficients of frequency (TCF) of Rayleigh modes vary across various overtones, whereas the SH0 modes exhibit TCFs in the range of 32.3–68.9 ppm/°C. Our fabricated SH0-mode overtone resonators demonstrate the capability of operating at power levels up to 29 dBm without electrode damage, offering a promising paradigm for robust and high-efficiency intermodal acousto-optic modulators with potential applications in integrated optical signal processing, microwave photonics, and quantum information technologies.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4941-4950"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding Field-Cycling-Dependent Evolution of Polarization Dynamics in Nonvolatile Anti-Ferroelectric HfxZr1–xO2 Capacitors 非易失性反铁电HfxZr1-xO2电容器极化动力学场循环演化研究

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-07-10 DOI: 10.1109/TED.2026.3708108

Ziyuan Chen;Lijian Chen;Junliang Zhou;Zeping Weng;Daolin Cai;Yi Zhao

引用次数: 0

Analytical Tools for Device Reliability and Characterization: Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance 器件可靠性和特性分析工具：电检测磁共振和近零场磁阻

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-02-18 DOI: 10.1109/TED.2026.3662667

P. M. Lenahan

{"title":"Analytical Tools for Device Reliability and Characterization: Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance","authors":"P. M. Lenahan","doi":"10.1109/TED.2026.3662667","DOIUrl":"https://doi.org/10.1109/TED.2026.3662667","url":null,"abstract":"There is a significant, though often incomplete empirical understanding of many semiconductor device reliability problems. Some examples in MOS technology are the many sophisticated and insightful studies on time-dependent dielectric breakdown (TDDB), the negative bias temperature instability, hot carrier instabilities, and radiation damage. Various approaches have been developed to deal with these reliability problems, and, of course, these approaches have been widely and successfully utilized. However, the experimental aspects of most investigations of these reliability issues involve only purely electrical measurements, from which a fundamental physical and chemical understanding of the underlying physical phenomena may only be inferred with great difficulty. A fundamental physical and chemical understanding of many of these issues can be developed through several electron spin-based techniques. This report provides a brief introduction to the theoretical background and experimental techniques specifically useful for the applications of these techniques in device reliability studies, as well as several examples of their application to important reliability issues.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4551-4557"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0