IEEE Transactions on Electron Devices最新文献

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Bridging the Data Gap in Photovoltaics with Synthetic Data Generation 通过合成数据生成弥补光伏领域的数据差距
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-10-25 DOI: 10.1109/TED.2024.3480493
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引用次数: 0
Awards Flyer 奖项传单
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-10-25 DOI: 10.1109/TED.2024.3483649
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引用次数: 0
TechRxiv: Share Your Preprint Research with the World! TechRxiv:与世界分享您的预印本研究成果!
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-10-25 DOI: 10.1109/TED.2024.3483651
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引用次数: 0
Blank Page 空白页
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-10-25 DOI: 10.1109/TED.2024.3480499
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引用次数: 0
IEEE Open Access Publishing IEEE 开放存取出版
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-10-25 DOI: 10.1109/TED.2024.3483653
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引用次数: 0
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices 电气和电子工程师学会电子器件期刊》智能传感器系统特刊
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-10-25 DOI: 10.1109/TED.2024.3480495
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引用次数: 0
IEEE ELECTRON DEVICES SOCIETY IEEE 电子设备协会
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-10-25 DOI: 10.1109/TED.2024.3480491
{"title":"IEEE ELECTRON DEVICES SOCIETY","authors":"","doi":"10.1109/TED.2024.3480491","DOIUrl":"https://doi.org/10.1109/TED.2024.3480491","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736249","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Corrections to “Electron Emission Regimes of Planar Nano Vacuum Emitters” 平面纳米真空发射器的电子发射机制 "的更正
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-10-25 DOI: 10.1109/TED.2024.3450435
Marco Turchetti;Yujia Yang;Mina Bionta;Alberto Nardi;Luca Daniel;Karl K. Berggren;Phillip D. Keathley
{"title":"Corrections to “Electron Emission Regimes of Planar Nano Vacuum Emitters”","authors":"Marco Turchetti;Yujia Yang;Mina Bionta;Alberto Nardi;Luca Daniel;Karl K. Berggren;Phillip D. Keathley","doi":"10.1109/TED.2024.3450435","DOIUrl":"https://doi.org/10.1109/TED.2024.3450435","url":null,"abstract":"Presents corrections to the paper, Electron Emission Regimes of Planar Nano Vacuum Emitters.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736347","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Electron Devices Information for Authors 电气和电子工程师学会《电子器件学报》(IEEE Transactions on Electron Devices)为作者提供的信息
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-10-25 DOI: 10.1109/TED.2024.3480497
{"title":"IEEE Transactions on Electron Devices Information for Authors","authors":"","doi":"10.1109/TED.2024.3480497","DOIUrl":"https://doi.org/10.1109/TED.2024.3480497","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736247","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative Study of SH-Mode Surface Acoustic Wave Resonators on Lithium Tantalate With Silicon and Silicon Carbide Substrates 钽酸锂与硅和碳化硅基底上的 SH 模式表面声波谐振器比较研究
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-10-11 DOI: 10.1109/TED.2024.3467223
Zonglin Wu;Shuxian Wu;Hangyu Qian;Feihong Bao;Gongbin Tang;Guo-Min Yang;Jie Zou
{"title":"Comparative Study of SH-Mode Surface Acoustic Wave Resonators on Lithium Tantalate With Silicon and Silicon Carbide Substrates","authors":"Zonglin Wu;Shuxian Wu;Hangyu Qian;Feihong Bao;Gongbin Tang;Guo-Min Yang;Jie Zou","doi":"10.1109/TED.2024.3467223","DOIUrl":"https://doi.org/10.1109/TED.2024.3467223","url":null,"abstract":"This study introduces shear horizontal (SH) surface acoustic wave (SAW) resonators based on a multilayered structure of lithium tantalate (LiTaO3 or LT)/silicon dioxide (SiO2)/4H-silicon carbide (4H SiC). SiC exhibits high resistivity (HR) (\u0000<inline-formula> <tex-math>$rho gt 10^{{10}}~Omega cdot $ </tex-math></inline-formula>\u0000cm), effectively suppressing the parasitic surface conduction (PSC) effect. The suppression of the PSC effect by 4H-SiC substrates is demonstrated by extracting the substrate loss of SiO2/4H-SiC and SiO2/Si substrates in a coplanar waveguide (CPW) structure. Consequently, SAW resonators based on 4H-SiC substrates demonstrate a superior quality factor (Q) compared to the conventional SH SAW resonators based on Si substrates. The fabricated resonators with 4H-SiC and Si substrates achieved Bode-\u0000<inline-formula> <tex-math>${Q} _{max }$ </tex-math></inline-formula>\u0000 of 3916 and 1836, \u0000<inline-formula> <tex-math>${Q} _{text {p}}$ </tex-math></inline-formula>\u0000 of 3402 and 590, and admittance ratios (\u0000<inline-formula> <tex-math>${Y} _{text {r}}$ </tex-math></inline-formula>\u0000) of 92 and 74 dB, respectively. The \u0000<inline-formula> <tex-math>${Q} _{text {p}}$ </tex-math></inline-formula>\u0000 of the 4H-SiC-based resonator is 5.7 times higher than that of the Si-based resonator. Substituting the Si substrate with the 4H-SiC substrate increases Q without compromising the effective electromechanical coupling (\u0000<inline-formula> <tex-math>${k} ^{{2}}_{text {eff}}$ </tex-math></inline-formula>\u0000) and temperature coefficient of frequency (TCF). To suppress the transverse mode of the SAW resonators, tilted interdigital transducers (IDTs) at various titled angles were fabricated. A 12° tilt angle IDT demonstrated the most effective transverse mode suppression. When the tilted IDT was employed, the \u0000<inline-formula> <tex-math>${Q} _{text {p}}$ </tex-math></inline-formula>\u0000 of the SAW resonator based on the 4H-SiC substrate surpassed that of Si substrate. Compared to the Si substrate, the 4H-SiC substrate resulted in a higher \u0000<inline-formula> <tex-math>${Q} _{text {p}}$ </tex-math></inline-formula>\u0000, making this technique promising for application in filters, oscillators, and sensors.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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