IEEE Transactions on Electron Devices最新文献

IEEE Transactions on Electron Devices Information for Authors IEEE电子器件信息汇刊

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-03 DOI: 10.1109/TED.2024.3516223

引用次数: 0

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-03 DOI: 10.1109/TED.2024.3516221

引用次数: 0

Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure 先进的Bragg谐振器集成在交错双叶片结构的g波段行波管中增强带宽和稳定性

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-18 DOI: 10.1109/TED.2024.3509384

Junyoung Lee;Hong Eun Choi;Wonjin Choi;EunMi Choi

{"title":"Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure","authors":"Junyoung Lee;Hong Eun Choi;Wonjin Choi;EunMi Choi","doi":"10.1109/TED.2024.3509384","DOIUrl":"https://doi.org/10.1109/TED.2024.3509384","url":null,"abstract":"This article presents the design and analysis of a wideband staggered double vane (SDV) sheet-beam-based traveling-wave tube (TWT) for stable amplification in the G-band. Unlike conventional SDV structures, which often suffer from oscillations within the interaction region due to upper and lower cutoff regions, our design employs several key innovations to overcome these limitations. First, the newly designed filter configuration effectively eliminates oscillations within the interaction region. Second, the shape of the Bragg resonator is modified to a diamond configuration, which significantly enhanced impedance matching around 200 GHz, ensuring broader bandwidth and improved transmission characteristics. Finally, we discuss the advantages of E-plane fabrication compared to H-plane fabrication and presents a study on the design of an E-plane filter structure that is feasible for manufacturing. Particle-in-cell (PIC) simulations and experimental validations confirm that our proposed design achieves a 40 GHz 3 dB bandwidth and stable operation without oscillations, demonstrating its potential for high-performance millimeter-wave (mmWave) applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"459-466"},"PeriodicalIF":2.9,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improvement of Switching Performance of RRAM Through Protruding Top Electrode and Utilizing Surface Roughness: Multiphysics Simulations 利用凸顶电极和表面粗糙度改善RRAM的开关性能：多物理场模拟

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-17 DOI: 10.1109/TED.2024.3506498

Jeonghwan Jang;Mincheol Shin

引用次数: 0

In-Circuit Inductance Measurement to Correct the Single-Pulse Avalanche Energy (Eas) of Transistor Under the Unclamped Inductive-Switching (UIS) Test 非箝位电感开关（UIS）测试中校正晶体管单脉冲雪崩能量（Eas）的电路电感测量

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-17 DOI: 10.1109/TED.2024.3509398

Jian-Hsing Lee;Ching-Ho Li;Chih-Cherng Liao;Gong-Kai Lin;Yu-Sheng Chiu;Chieh-Yao Chuang;Ke-Horng Chen

{"title":"In-Circuit Inductance Measurement to Correct the Single-Pulse Avalanche Energy (Eas) of Transistor Under the Unclamped Inductive-Switching (UIS) Test","authors":"Jian-Hsing Lee;Ching-Ho Li;Chih-Cherng Liao;Gong-Kai Lin;Yu-Sheng Chiu;Chieh-Yao Chuang;Ke-Horng Chen","doi":"10.1109/TED.2024.3509398","DOIUrl":"https://doi.org/10.1109/TED.2024.3509398","url":null,"abstract":"The single-mode avalanche energy (\u0000<inline-formula> <tex-math>${E}_{text {as}}text {)}$ </tex-math></inline-formula>\u0000 evaluated from the unclamped inductive-switching (UIS) test has been used in many application notes and literature as the ruggedness index of a transistor. The inductance is the key parameter for \u0000<inline-formula> <tex-math>${E}_{text {as}}$ </tex-math></inline-formula>\u0000 calculation. From the in-circuit measurement, the inductance at the channel turn-off time (\u0000<inline-formula> <tex-math>${t}_{text {off}}text {)}$ </tex-math></inline-formula>\u0000 is found smaller than the default inductance for the power transistor under the UIS test. However, most UIS testers still use the default inductance to calculate \u0000<inline-formula> <tex-math>${E}_{text {as}}$ </tex-math></inline-formula>\u0000. In this article, whether the inductance can keep constant during \u0000<inline-formula> <tex-math>${t}_{text {off}}$ </tex-math></inline-formula>\u0000 for any transistor under any test condition of UIS and why it is smaller than the default inductance during \u0000<inline-formula> <tex-math>${t}_{text {off}}$ </tex-math></inline-formula>\u0000 for air core inductors is investigated. Without the ferrite core, the magnetization (M) of the air core inductor during the UIS test is caused by the eddy currents, which increase with increasing current and decrease with decreasing current linearly. Therefore, the differential magnetization (dM/dH) is constant, resulting in two different inductances during channel turn-on time (\u0000<inline-formula> <tex-math>${t}_{text {on}}text {)}$ </tex-math></inline-formula>\u0000 and turn-off time \u0000<inline-formula> <tex-math>${t}_{text {off}}$ </tex-math></inline-formula>\u0000.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"317-322"},"PeriodicalIF":2.9,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diode on Different Bias Conditions β-Ga₂O₃肖特基势垒二极管在不同偏置条件下的总电离剂量效应

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-13 DOI: 10.1109/TED.2024.3505847

Weili Fu;Teng Ma;Yuangang Wang;Xing Li;Zhifeng Lei;Jinbin Wang;Hongjia Song;Chao Peng;Zhangang Zhang;Hong Zhang;Liang He;Tao Xiao;Daoyou Guo;Xiangli Zhong

{"title":"Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diode on Different Bias Conditions","authors":"Weili Fu;Teng Ma;Yuangang Wang;Xing Li;Zhifeng Lei;Jinbin Wang;Hongjia Song;Chao Peng;Zhangang Zhang;Hong Zhang;Liang He;Tao Xiao;Daoyou Guo;Xiangli Zhong","doi":"10.1109/TED.2024.3505847","DOIUrl":"https://doi.org/10.1109/TED.2024.3505847","url":null,"abstract":"This article focuses on investigating the total ionizing dose (TID) effects of \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3-based Schottky barrier diodes (SBDs). The TID degradation behavior and mechanisms are evaluated by varying irradiation bias conditions, conducted through dc, capacitance–voltage (C–V), and low-frequency noise (LFN) measurements. At a dose of 1 Mrad(Si), the irradiated devices demonstrate a noticeable increase in both forward and reverse currents. This increase is primarily attributed to the rise in defect concentration caused by ionizing damage resulting from TID effects. The TID degradation of \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 SBD is significantly influenced by bias conditions, with devices under high electric fields experiencing more severe degradation. Specifically, a high reverse electric field during radiation leads to a notable increase in interface defects of \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 SBDs, this result was validated through TCAD simulation. The reverse bias voltage exacerbates TID effects and reduces the radiation tolerance of \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 SBD devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"147-153"},"PeriodicalIF":2.9,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

C-Axis Oriented HZO on Flat Amorphous TiN Achieving High Uniformity, Breakdown Field, Final 2Pr, and Endurance 在平面非晶锡上的c轴定向HZO实现了高均匀性、击穿场、最终2Pr和耐久性

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-13 DOI: 10.1109/TED.2024.3502032

Zefu Zhao;Yu-Tsung Liao;Yu-Rui Chen;Yun-Wen Chen;Wan-Hsuan Hsieh;Jer-Fu Wang;Yu-An Chen;Hao-Yi Lu;Wei-Teng Hsu;Dai-Ying Lee;Ming-Hsiu Lee;C. W. Liu

{"title":"C-Axis Oriented HZO on Flat Amorphous TiN Achieving High Uniformity, Breakdown Field, Final 2Pr, and Endurance","authors":"Zefu Zhao;Yu-Tsung Liao;Yu-Rui Chen;Yun-Wen Chen;Wan-Hsuan Hsieh;Jer-Fu Wang;Yu-An Chen;Hao-Yi Lu;Wei-Teng Hsu;Dai-Ying Lee;Ming-Hsiu Lee;C. W. Liu","doi":"10.1109/TED.2024.3502032","DOIUrl":"https://doi.org/10.1109/TED.2024.3502032","url":null,"abstract":"Metal-ferroelectric-metal (MFM) capacitors with flat amorphous TiN are demonstrated to achieve the c-axis of orthorhombic phase (o-phase) well-aligned along the deposition direction, uniform electric field, negligible fatigue, and a high remanent polarization (2Pr) of \u0000<inline-formula> <tex-math>$62 ; mu $ </tex-math></inline-formula>\u0000C/cm2. The large lattice misfit between crystalline TiN and Hf0.5Zr0.5O2 (HZO) creates a larger barrier to form the o-phase HZO as compared to the amorphous TiN underlayer. Using chemical–mechanical polishing (CMP) can obtain a 0.3 nm roughness flat TiN, measured by atomic force microscopy (AFM). HZO on flat amorphous TiN exhibits a uniform and high breakdown field (EBD) of 4.8/−5.1 MV/cm for positive/negative voltage. A flat TiN mitigates the formation of oxygen vacancies (Vo) as compared to the rough TiN due to the weak and uniform electric field with few local extremes in HZO. After 4E12 endurance cycles, the HZO on the flat TiN exhibits a high final 2Pr of \u0000<inline-formula> <tex-math>$56 ; mu $ </tex-math></inline-formula>\u0000C/cm2 due to small dipole pinning by V\u0000<inline-formula> <tex-math>$_{text {o}}^{{2}+}$ </tex-math></inline-formula>\u0000. This work demonstrates the way to achieve uniformly high 2Pr, large EBD, and high endurance by the flat amorphous TiN.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"222-227"},"PeriodicalIF":2.9,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Boltzmann-Statistics-Aware Non-Quasi-Static-Charge Model for IC Simulations 集成电路仿真的玻尔兹曼统计感知非准静态电荷模型

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-13 DOI: 10.1109/TED.2024.3513945

Chetan Kumar Dabhi;Girish Pahwa;Sayeef Salahuddin;Chenming Hu

{"title":"Boltzmann-Statistics-Aware Non-Quasi-Static-Charge Model for IC Simulations","authors":"Chetan Kumar Dabhi;Girish Pahwa;Sayeef Salahuddin;Chenming Hu","doi":"10.1109/TED.2024.3513945","DOIUrl":"https://doi.org/10.1109/TED.2024.3513945","url":null,"abstract":"In this article, Boltzmann statistics consideration is added to the charge-deficit large-signal non-quasi-static (NQS) model. The new model eliminates the nonphysical negative drain transport (as opposed to displacement) current at large drain voltage and under fast gate voltage (\u0000<inline-formula> <tex-math>$text {V}_{text {gs}}$ </tex-math></inline-formula>\u0000) turn-on. The new model agrees well with the technology computer-aided design (TCAD) simulation data for turn-on and turnoff transients and for all the drain voltage (\u0000<inline-formula> <tex-math>$text {V}_{text {ds}}$ </tex-math></inline-formula>\u0000) values, small or large. In addition, the model captures the temperature dependence of channel charge partition between source charge and drain charge in agreement with TCAD simulation results, thus reconfirming the importance of including Boltzmann statistics in NQS models. The new Boltzmann-aware NQS model is implemented in Verilog-A and tested using commercial circuit simulators. It is intended for the simulation of large-signal and small-signal NQS, and high-speed analog, logic and memory circuits.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"357-363"},"PeriodicalIF":2.9,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Troubleshooting a High-Leakage Issue of an Overdrive FinFET ESD Power Clamp From Fabrication Perspective 从制造角度排除超速 FinFET ESD 电源钳的高泄漏问题

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-11 DOI: 10.1109/TED.2024.3509389

Guangyi Lu;Lihui Wang;Ling Wang;Xin Gao;Jiahao Wei;Haiming Wang

引用次数: 0

In Situ O₂ Plasma-Treated HfO₂–ZrO₂ Superlattice HZO FeRAMs Exhibiting Enhanced Remnant Polarization and Improved Endurance Performance 原位O₂等离子体处理的HfO₂-ZrO₂超晶格HZO feram显示出增强的残余极化和改进的续航性能

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-11 DOI: 10.1109/TED.2024.3509401

Dong-Ru Hsieh;Zi-Yang Hong;Wei-Ju Yeh;Jia-Chian Ni;Huai-En Luo;Yan-Kui Liang;Chun-Hsiung Lin;Tien-Sheng Chao

{"title":"In Situ O₂ Plasma-Treated HfO₂–ZrO₂ Superlattice HZO FeRAMs Exhibiting Enhanced Remnant Polarization and Improved Endurance Performance","authors":"Dong-Ru Hsieh;Zi-Yang Hong;Wei-Ju Yeh;Jia-Chian Ni;Huai-En Luo;Yan-Kui Liang;Chun-Hsiung Lin;Tien-Sheng Chao","doi":"10.1109/TED.2024.3509401","DOIUrl":"https://doi.org/10.1109/TED.2024.3509401","url":null,"abstract":"In this study, HfO2–ZrO2 superlattice (SL) HfZrO2 (HZO) ferroelectric random access memories (FeRAMs) with various HfO2/ZrO2 nanolamination (NL) thicknesses and a 1.5-nm ZrO2 seed layer were fabricated without and with in situ O2 plasma treatment to experimentally investigate and discuss their ferroelectricity and endurance performance. Compared with the conventional HZO FeRAMs, the HfO2–ZrO2 SL HZO FeRAMs with a HfO2 and ZrO2 NL thickness of 1 nm exhibited a higher two remnant polarization (\u0000<inline-formula> <tex-math>$2{P} _{text {r}}$ </tex-math></inline-formula>\u0000) of \u0000<inline-formula> <tex-math>$43.32~mu $ </tex-math></inline-formula>\u0000C/cm2, nearly wake-up free behavior, stronger fatigue effect immunity, and lower two coercive field (\u0000<inline-formula> <tex-math>$2{E} _{text {c}}$ </tex-math></inline-formula>\u0000) of 2.55 MV/cm. Furthermore, by using an in situ O2 plasma-treated SL HZO thin film for the FeRAMs to greatly suppress the oxygen vacancy generation during cycling, a further improved fatigue effect immunity and significantly reduced pulsed \u0000<inline-formula> <tex-math>$2{P} _{text {r}}$ </tex-math></inline-formula>\u0000 degradation rate (\u0000<inline-formula> <tex-math>$Delta 2{P} _{text {r}}$ </tex-math></inline-formula>\u0000/\u0000<inline-formula> <tex-math>$2{P} _{text {r,pristine}}$ </tex-math></inline-formula>\u0000) down to 36.48% after the endurance test of \u0000<inline-formula> <tex-math>$10^{{9}}$ </tex-math></inline-formula>\u0000 cycles can be achieved because the in situ O2 plasma-treated SL HZO FeRAMs possess a significantly enhanced HZO thin-film quality. Therefore, the in situ O2 plasma-treated SL HZO FeRAMs are very suitable candidates for embedded nonvolatile memory (eNVM) applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"259-265"},"PeriodicalIF":2.9,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0