IEEE Transactions on Electron Devices最新文献

Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-31 DOI: 10.1109/TED.2025.3547553

引用次数: 0

IEEE Transactions on Electron Devices Publication Information

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-31 DOI: 10.1109/TED.2025.3547545

引用次数: 0

Development of Fully ZnO-Based 16 × 16 1S1R RRAM Crossbar Array and Performance Investigations

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-31 DOI: 10.1109/TED.2025.3539650

Ting-Jui Wang;Cheng-Ying Li;Po-An Shih;Jai-Hao Wang;Kuan-Lin Yeh;Kai-Ling Hsu;Sheng-Yuan Chu

{"title":"Development of Fully ZnO-Based 16 × 16 1S1R RRAM Crossbar Array and Performance Investigations","authors":"Ting-Jui Wang;Cheng-Ying Li;Po-An Shih;Jai-Hao Wang;Kuan-Lin Yeh;Kai-Ling Hsu;Sheng-Yuan Chu","doi":"10.1109/TED.2025.3539650","DOIUrl":"https://doi.org/10.1109/TED.2025.3539650","url":null,"abstract":"This study investigates the effects of co-sputtering SiC into zinc oxide (ZnO):Li (3 mol%) thin films, resulting in the formation of lithium-doped zinc oxide: silicon carbide (LZO:SiC) oxide layers. These oxide layers have different work functions (WFs) due to their distinct chemical bonding. Subsequently, these layers are stacked together to form a form-free one-selector and one-resistor (1S1R) structure. This structure comprises Pt/V/LZO:SiC2 (buffer layer)/LZO:SiC1 (oxide layer)/TiN. Notably, this marks the first successful production of a ZnO-based 1S1R structure using this method. In our experiments, we observed that this novel structure significantly enhances I–V nonlinearity, increasing it from the initial value of 2.14–62. Furthermore, according to our calculations, the optimal array size has substantially increased from the original 4 bits to over 2500 bits, indicating the enormous potential of this technology for high-density memory applications. Building on these results, we further utilized photomask manufacturing technology to successfully create a <inline-formula> <tex-math>$16times 16~1$ </tex-math></inline-formula>S1R resistive random access memory (RRAM) crossbar array. To the best of our knowledge, this is the first report of applying a ZnO-based 1S1R structure to a crossbar array. This study not only demonstrates the feasibility of ZnO-based 1S1R structures but also opens new directions for future applications in high-performance memory technologies. Our findings showcase the potential advantages of this technology and provide a solid foundation for further technological development and practical applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1702-1708"},"PeriodicalIF":2.9,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Transactions on Electron Devices Information for Authors

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-31 DOI: 10.1109/TED.2025.3547555

引用次数: 0

Call for Papers: Journal of Lightwave Technology Special Issue on OFS-29

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-31 DOI: 10.1109/TED.2025.3547551

引用次数: 0

Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-31 DOI: 10.1109/TED.2025.3547547

引用次数: 0

Call for Papers for a Special Issue of IEEE Transactions on Materials for Electron Devices: Exploration of the Exciting World of Multifunctional Oxide-Based Electronic Devices: From Material to System-Level Applications

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-31 DOI: 10.1109/TED.2025.3547549

引用次数: 0

Degradations of Multijunction Solar Cell Revealed by Absolute Electroluminescence Imaging

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-24 DOI: 10.1109/TED.2025.3546586

Panpan Yang;Youyang Wang;Qiao Huang;Deyang Qin;Jianing Zhang;Wenjie Zhou;Guoen Weng;Xiaobo Hu;Junhao Chu;Hidefumi Akiyama;Shaoqiang Chen

{"title":"Degradations of Multijunction Solar Cell Revealed by Absolute Electroluminescence Imaging","authors":"Panpan Yang;Youyang Wang;Qiao Huang;Deyang Qin;Jianing Zhang;Wenjie Zhou;Guoen Weng;Xiaobo Hu;Junhao Chu;Hidefumi Akiyama;Shaoqiang Chen","doi":"10.1109/TED.2025.3546586","DOIUrl":"https://doi.org/10.1109/TED.2025.3546586","url":null,"abstract":"Multijunction solar cells (MJSCs) experience material degradation and reduced efficiency during long-term storage. Current defect analysis methods for III-V compound MJSCs are limited by a lack of intuitive tools and in-depth understanding, hindering improvements in yield and efficiency. Absolute electroluminescence (EL) is a powerful technique for visualization and predicting solar cell performance. In this study, we applied absolute EL to quantify performance and degradation mechanisms in subcells after 26 months of storage. Absolute EL imaging identified both potential and inherent defect types within the subcells. The detailed analysis of localized defect points showed reduced photon emission near the defect points. Using the reciprocity theorem and carrier balance model, we found that degradation in the InGaP/GaAs/InGaAs solar cell resulted in a 0.8% reduction in efficiency, largely due to nonradiative recombination (NR) losses. Additionally, the efficiencies of top, middle, and bottom cells decreased by reduced by 0.3%, 0.2%, and 0.3%, respectively. This work demonstrates that the absolute EL imaging technique provides a comprehensive and detailed method for understanding defects and energy losses during long-term storage in MJSC.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1857-1863"},"PeriodicalIF":2.9,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spurious-Free Shear Horizontal Surface Acoustic Wave Filters Based on 36Y-Cut LiNbO₃/SiO₂/Si Substrates 基于 36Y-Cut LiNbO₃/SiO₂/Si 基底的无杂散剪切水平表面声波滤波器

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-19 DOI: 10.1109/TED.2025.3541598

Yushuai Liu;Yiwei Wang;Xuankai Xu;Tao Wu

{"title":"Spurious-Free Shear Horizontal Surface Acoustic Wave Filters Based on 36Y-Cut LiNbO₃/SiO₂/Si Substrates","authors":"Yushuai Liu;Yiwei Wang;Xuankai Xu;Tao Wu","doi":"10.1109/TED.2025.3541598","DOIUrl":"https://doi.org/10.1109/TED.2025.3541598","url":null,"abstract":"High-performance surface acoustic wave (SAW) filters are essential for meeting modern demands for ubiquitous wireless connectivity and rapid data transmission. This study first explores the design and optimization of shear-horizontal-SAW (SH-SAW) multilayer resonators on 36Y-cut LiNbO3/SiO2/Si substrates, addressing spurious mode suppression, energy dispersion characteristics, and filter applications. To mitigate interference between the transverse and longitudinal modes, a new tilted interdigital transducer (IDT) design and the reflector period ratio <inline-formula> <tex-math>${lambda }_{R}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${lambda }lt {1}$ </tex-math></inline-formula> were implemented. Dispersion analysis identified the optimal wavelength for mode suppression at <inline-formula> <tex-math>$1.8~mu $ </tex-math></inline-formula>m, addressing out-of-band (OoB) interference from Rayleigh and high-order SH (SH1) modes. Studies of phase velocity (<inline-formula> <tex-math>${v}_{p}$ </tex-math></inline-formula>) and energy distribution revealed that metal layers significantly affect acoustic energy dissipation, reducing <inline-formula> <tex-math>${v}_{p}$ </tex-math></inline-formula> and quality factor (Q) at higher frequencies than 2 GHz. These findings were finally applied to design a spurious-free filter with a center frequency near 2 GHz and a fractional bandwidth (FBW) of 9.9%, demonstrating its potential for high-performance acoustic filters in communication systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1961-1968"},"PeriodicalIF":2.9,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gold Mask-Assisted Fabrication of Contamination-Free Monolayer MoS2 Transistors

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-17 DOI: 10.1109/TED.2025.3547294

Yumeng Liu;Yizhuo Wang;Zhengfang Fan;Jianyong Wei;Seyed Saleh Mousavi Khaleghi;Shuwen Guo;Zhentao Lian;Hao Wei;Zhijuan Su;Rui Yang;Robert Kudrawiec;Yaping Dan

引用次数: 0