IEEE Transactions on Electron Devices最新文献

{"title":"Awards Flyer","authors":"","doi":"10.1109/TED.2024.3483649","DOIUrl":"https://doi.org/10.1109/TED.2024.3483649","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7218-7218"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736248","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bridging the Data Gap in Photovoltaics with Synthetic Data Generation","authors":"","doi":"10.1109/TED.2024.3480493","DOIUrl":"https://doi.org/10.1109/TED.2024.3480493","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7214-7215"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736245","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TED.2024.3483651","DOIUrl":"https://doi.org/10.1109/TED.2024.3483651","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7219-7219"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736244","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Blank Page","authors":"","doi":"10.1109/TED.2024.3480499","DOIUrl":"https://doi.org/10.1109/TED.2024.3480499","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"C4-C4"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736246","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Open Access Publishing","authors":"","doi":"10.1109/TED.2024.3483653","DOIUrl":"https://doi.org/10.1109/TED.2024.3483653","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7220-7220"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736252","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices","authors":"","doi":"10.1109/TED.2024.3480495","DOIUrl":"https://doi.org/10.1109/TED.2024.3480495","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7216-7217"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736250","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE ELECTRON DEVICES SOCIETY","authors":"","doi":"10.1109/TED.2024.3480491","DOIUrl":"https://doi.org/10.1109/TED.2024.3480491","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"C2-C2"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736249","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrections to “Electron Emission Regimes of Planar Nano Vacuum Emitters”","authors":"Marco Turchetti;Yujia Yang;Mina Bionta;Alberto Nardi;Luca Daniel;Karl K. Berggren;Phillip D. Keathley","doi":"10.1109/TED.2024.3450435","DOIUrl":"https://doi.org/10.1109/TED.2024.3450435","url":null,"abstract":"Presents corrections to the paper, Electron Emission Regimes of Planar Nano Vacuum Emitters.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7213-7213"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736347","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Electron Devices Information for Authors","authors":"","doi":"10.1109/TED.2024.3480497","DOIUrl":"https://doi.org/10.1109/TED.2024.3480497","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"C3-C3"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736247","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Study of SH-Mode Surface Acoustic Wave Resonators on Lithium Tantalate With Silicon and Silicon Carbide Substrates","authors":"Zonglin Wu;Shuxian Wu;Hangyu Qian;Feihong Bao;Gongbin Tang;Guo-Min Yang;Jie Zou","doi":"10.1109/TED.2024.3467223","DOIUrl":"https://doi.org/10.1109/TED.2024.3467223","url":null,"abstract":"This study introduces shear horizontal (SH) surface acoustic wave (SAW) resonators based on a multilayered structure of lithium tantalate (LiTaO3 or LT)/silicon dioxide (SiO2)/4H-silicon carbide (4H SiC). SiC exhibits high resistivity (HR) (\u0000<inline-formula> <tex-math>$rho gt 10^{{10}}~Omega cdot $ </tex-math></inline-formula>\u0000cm), effectively suppressing the parasitic surface conduction (PSC) effect. The suppression of the PSC effect by 4H-SiC substrates is demonstrated by extracting the substrate loss of SiO2/4H-SiC and SiO2/Si substrates in a coplanar waveguide (CPW) structure. Consequently, SAW resonators based on 4H-SiC substrates demonstrate a superior quality factor (Q) compared to the conventional SH SAW resonators based on Si substrates. The fabricated resonators with 4H-SiC and Si substrates achieved Bode-\u0000<inline-formula> <tex-math>${Q} _{max }$ </tex-math></inline-formula>\u0000 of 3916 and 1836, \u0000<inline-formula> <tex-math>${Q} _{text {p}}$ </tex-math></inline-formula>\u0000 of 3402 and 590, and admittance ratios (\u0000<inline-formula> <tex-math>${Y} _{text {r}}$ </tex-math></inline-formula>\u0000) of 92 and 74 dB, respectively. The \u0000<inline-formula> <tex-math>${Q} _{text {p}}$ </tex-math></inline-formula>\u0000 of the 4H-SiC-based resonator is 5.7 times higher than that of the Si-based resonator. Substituting the Si substrate with the 4H-SiC substrate increases Q without compromising the effective electromechanical coupling (\u0000<inline-formula> <tex-math>${k} ^{{2}}_{text {eff}}$ </tex-math></inline-formula>\u0000) and temperature coefficient of frequency (TCF). To suppress the transverse mode of the SAW resonators, tilted interdigital transducers (IDTs) at various titled angles were fabricated. A 12° tilt angle IDT demonstrated the most effective transverse mode suppression. When the tilted IDT was employed, the \u0000<inline-formula> <tex-math>${Q} _{text {p}}$ </tex-math></inline-formula>\u0000 of the SAW resonator based on the 4H-SiC substrate surpassed that of Si substrate. Compared to the Si substrate, the 4H-SiC substrate resulted in a higher \u0000<inline-formula> <tex-math>${Q} _{text {p}}$ </tex-math></inline-formula>\u0000, making this technique promising for application in filters, oscillators, and sensors.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7022-7029"},"PeriodicalIF":2.9,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}