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IEEE Transactions on Electron Devices最新文献

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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 《IEEE电子器件学报：用于射频、功率和光电子应用的超宽带隙半导体器件》特刊征文
IF 3.2 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2025-09-23 DOI: 10.1109/TED.2025.3608842
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引用次数: 0
IEEE Transactions on Electron Devices Information for Authors IEEE电子器件信息汇刊
IF 3.2 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2025-09-23 DOI: 10.1109/TED.2025.3608844
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes 《IEEE电子设备学报：高级节点的可靠性》特刊征文
IF 3.2 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2025-09-23 DOI: 10.1109/TED.2025.3608840
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引用次数: 0
IEEE Transactions on Electron Devices Publication Information IEEE电子设备出版信息汇刊
IF 3.2 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2025-08-26 DOI: 10.1109/TED.2025.3598553
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes 《IEEE电子设备学报：高级节点的可靠性》特刊征文
IF 3.2 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2025-08-26 DOI: 10.1109/TED.2025.3598557
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications 《汽车用宽带隙半导体电子器件》特刊征文
IF 3.2 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2025-08-26 DOI: 10.1109/TED.2025.3598555
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 《IEEE电子器件学报：用于射频、功率和光电子应用的超宽带隙半导体器件》特刊征文
IF 3.2 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2025-08-26 DOI: 10.1109/TED.2025.3598559
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引用次数: 0
IEEE Transactions on Electron Devices Information for Authors IEEE电子器件信息汇刊
IF 3.2 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2025-08-26 DOI: 10.1109/TED.2025.3598561
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引用次数: 0
Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory 3-D NAND快闪记忆体隧道氧化物中受困电子隧穿发射的尝试逃逸频率建模
IF 3.2 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2025-08-26 DOI: 10.1109/TED.2025.3589340
Myung Jin;Hyungcheol Shin
{"title":"Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory","authors":"Myung Jin;Hyungcheol Shin","doi":"10.1109/TED.2025.3589340","DOIUrl":"https://doi.org/10.1109/TED.2025.3589340","url":null,"abstract":"We propose a novel physical model for the attempt-to-escape frequency of trap-to-band electron emission, which is broadly applicable to various trap-to-band scenarios. The model is verified under detrapping mechanisms in bandgap-engineered tunneling oxide (BETOX), enabling accurate prediction of electron emission dynamics within extremely short timeframes. Extensive comparisons between the proposed model and calibrated TCAD simulations demonstrate excellent agreement, validating its accuracy and reliability. Additionally, based on calibrated physical parameters, the model is adaptable to engineering variations such as trap profiles, including intricate combinations of Gaussian trap distributions, making it highly versatile for future device optimization and analysis.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4884-4889"},"PeriodicalIF":3.2,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications 用于高温IC应用的微米SiC CMOS器件的设计优化
IF 3.2 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2025-08-26 DOI: 10.1109/TED.2025.3582221
Pengyu Lai;Hui Wang;Kevin Chen;H. Alan Mantooth;Zhong Chen
{"title":"Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications","authors":"Pengyu Lai;Hui Wang;Kevin Chen;H. Alan Mantooth;Zhong Chen","doi":"10.1109/TED.2025.3582221","DOIUrl":"https://doi.org/10.1109/TED.2025.3582221","url":null,"abstract":"This article proposes the generalized design guideline for micrometer silicon carbide (SiC) complementary metal-oxide-semiconductor (CMOS) devices for integrated circuit (IC) applications. The design window of 1-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula> m SiC CMOS devices, which considers device operation voltage, <sc>on</small>-state current, short channel effect (SCE), and subthreshold swing (SS), is proposed to show the design margins of the gate oxide thickness and channel doping concentration. The performance of CMOS devices in 1-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula> m SiC CMOS processes is used to demonstrate the effectiveness of the proposed design window. SiC-based buffer chain circuits are tested to demonstrate circuit operating speed and power consumption. The devices and circuits are fully characterized from 25 ° C to 300 ° C. It has been demonstrated that further design improvements for SiC CMOS devices are needed before large-scale implementation due to their strong SCE, high SS, and low<sc>on</small>-state current. On the other hand, SiC ICs show less degradation with increasing temperatures compared to Si ICs, making them promising for high-temperature applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4742-4751"},"PeriodicalIF":3.2,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144904844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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