单模全桥涡隧道磁阻传感器

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-07-11 DOI:10.1109/TED.2025.3579462

Wei Su;Jiaming Liu;Xianfeng Liang;Mengmeng Guan;Jieqiang Gao;Haifeng Gao;Zhiguang Wang;Jinghong Guo;Zhongqiang Hu;Ming Liu

{"title":"单模全桥涡隧道磁阻传感器","authors":"Wei Su;Jiaming Liu;Xianfeng Liang;Mengmeng Guan;Jieqiang Gao;Haifeng Gao;Zhiguang Wang;Jinghong Guo;Zhongqiang Hu;Ming Liu","doi":"10.1109/TED.2025.3579462","DOIUrl":null,"url":null,"abstract":"In order to form a full Wheatstone bridge configuration with linear and bipolar voltage output, a conventional tunneling magnetoresistive (TMR) sensor requires two identical sensing elements that are assembled anti-parallel to each other. Mechanical assembly of two dies induces unavoidable angular errors and a complicated packaging process. Here, we report a full-bridge TMR sensor configured on a single die, which is realized by manipulating the vortex magnetic domain size of the free layer in the magnetic tunnel junctions (MTJs) with different diameters. The sensitivity and linear range of the TMR sensor can be adjusted by changing the vortex size of different bridge arms, which also shows excellent anti-interference performance after a high disturbing magnetic field of 100 mT.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4576-4579"},"PeriodicalIF":3.2000,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Full-Bridge Vortex-Type Tunneling Magnetoresistive Sensor on a Single Die\",\"authors\":\"Wei Su;Jiaming Liu;Xianfeng Liang;Mengmeng Guan;Jieqiang Gao;Haifeng Gao;Zhiguang Wang;Jinghong Guo;Zhongqiang Hu;Ming Liu\",\"doi\":\"10.1109/TED.2025.3579462\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to form a full Wheatstone bridge configuration with linear and bipolar voltage output, a conventional tunneling magnetoresistive (TMR) sensor requires two identical sensing elements that are assembled anti-parallel to each other. Mechanical assembly of two dies induces unavoidable angular errors and a complicated packaging process. Here, we report a full-bridge TMR sensor configured on a single die, which is realized by manipulating the vortex magnetic domain size of the free layer in the magnetic tunnel junctions (MTJs) with different diameters. The sensitivity and linear range of the TMR sensor can be adjusted by changing the vortex size of different bridge arms, which also shows excellent anti-interference performance after a high disturbing magnetic field of 100 mT.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"72 8\",\"pages\":\"4576-4579\"},\"PeriodicalIF\":3.2000,\"publicationDate\":\"2025-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11078149/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11078149/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

为了形成具有线性和双极电压输出的完整惠斯通电桥结构，传统的隧道磁阻（TMR）传感器需要两个相同的传感元件彼此反平行组装。两个模具的机械装配会产生不可避免的角度误差和复杂的封装过程。本文报道了一种配置在单模上的全桥TMR传感器，该传感器通过控制不同直径磁隧道结（MTJs）中自由层的涡流磁畴大小来实现。TMR传感器的灵敏度和线性范围可以通过改变不同桥臂的涡流大小来调节，在100 mT的高干扰磁场下也表现出优异的抗干扰性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Full-Bridge Vortex-Type Tunneling Magnetoresistive Sensor on a Single Die

In order to form a full Wheatstone bridge configuration with linear and bipolar voltage output, a conventional tunneling magnetoresistive (TMR) sensor requires two identical sensing elements that are assembled anti-parallel to each other. Mechanical assembly of two dies induces unavoidable angular errors and a complicated packaging process. Here, we report a full-bridge TMR sensor configured on a single die, which is realized by manipulating the vortex magnetic domain size of the free layer in the magnetic tunnel junctions (MTJs) with different diameters. The sensitivity and linear range of the TMR sensor can be adjusted by changing the vortex size of different bridge arms, which also shows excellent anti-interference performance after a high disturbing magnetic field of 100 mT.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.