IEEE Transactions on Electron Devices最新文献_第2页

Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications 用于多千伏和安培级应用的Ga2O3垂直SBD，具有悬浮场板辅助浅台面终端

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-10 DOI: 10.1109/TED.2025.3584011

Xueli Han;Xiaorui Xu;Zhengbo Wang;Hanchao Yang;Desen Chen;Yicong Deng;Duanyang Chen;Haizhong Zhang;Hongji Qi

{"title":"Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications","authors":"Xueli Han;Xiaorui Xu;Zhengbo Wang;Hanchao Yang;Desen Chen;Yicong Deng;Duanyang Chen;Haizhong Zhang;Hongji Qi","doi":"10.1109/TED.2025.3584011","DOIUrl":"https://doi.org/10.1109/TED.2025.3584011","url":null,"abstract":"In this work, a vertical gallium oxide (Ga2O3) Schottky barrier diode (SBD) with suspended field plate-assisted shallow mesa termination (SFPM-SBD) is proposed and fabricated. The suspended field plate is achieved by using Cl2 in the ICP etching process to facilitate isotropic etching of Ga2O3. Compared with shallow mesa SBD, the introduction of SFPM can further optimize the electric field (E_Field) distribution. Consequently, a high breakdown voltage (BV) of over 3.5 kV and a low specific <sc>on</small>-resistance of 5.77 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2 are achieved, resulting in a power figure of merit (PFOM) >2.12 GW/cm2. Furthermore, the large-area device with <inline-formula> <tex-math>$3times 3$ </tex-math></inline-formula> mm2 is fabricated, achieving a BV exceeding 1.5 kV and a high forward current of 12 A at 2 V. The simplified fabrication process of the SFPM-SBD, combined with its outstanding performance, makes it a promising candidate for multikilovolt and ampere-class applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4307-4312"},"PeriodicalIF":2.9,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Power, Performance, and Area Analysis of Ultra-Stacked Forksheet-FET for Angstrom Nodes 超堆叠叉片场效应晶体管的功率、性能和面积分析

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-10 DOI: 10.1109/TED.2025.3582225

Junjong Lee;Sanguk Lee;Yonghwan Ahn;Minchan Kim;Gunryeol Cho;Sunmin Yeou;Sung-Kyu Lim;Rock-Hyun Baek

{"title":"Power, Performance, and Area Analysis of Ultra-Stacked Forksheet-FET for Angstrom Nodes","authors":"Junjong Lee;Sanguk Lee;Yonghwan Ahn;Minchan Kim;Gunryeol Cho;Sunmin Yeou;Sung-Kyu Lim;Rock-Hyun Baek","doi":"10.1109/TED.2025.3582225","DOIUrl":"https://doi.org/10.1109/TED.2025.3582225","url":null,"abstract":"For the first time, this study investigated the standard cell and chip-level power, performance, and area (PPA) benefit of ultra-stacked forksheet-FET (FSFET) with five channels for Angstrom nodes. Five-stack FSFET shows a smaller channel width than conventional four-stack FSFET at the same drive current condition, enabling additional scaling. In conventional nanosheet-FET (NSFET), a large number of channels increases parasitic resistance and capacitance, which degrades device performance. However, the wall of FSFET, the wrap-around contact, the metal source/drain, and the small vertical spacing of the channel can mitigate the increases in parasitics. Therefore, a five-stack FSFET can achieve a small footprint without frequency degradation. We developed 4T standard cells with heights of 76 and 68 nm for four-stack FSFET and five-stack FSFET, respectively. In the same device performance condition, the five-stack FSFET-based cells show a smaller energy-delay product due to the small capacitance. Five-stack FSFET-based chip shows a 10.5%~10.7% smaller area and 7.0%~7.5% shorter wire length for all benchmarks. The shorter wire length reduces wire capacitance; thus, the five-stack FSFET-based chip shows a smaller power consumption. On the other hand, the five-stack FSFET has a smaller metal width and a larger wire resistance. However, the five-stack FSFET-based chip shows only a slight increase in power-delay product (PDP) due to the gate-dominated circuit, great optimization using buffer insertion, and a backside power delivery network (BS-PDN). Overall, the five-stack FSFET-based chip shows only a slightly degraded PDP with 10.5%~10.7% smaller area. Ultra-stacked FSFET enables additional scaling, with only an increase in channel number before adopting complementary-FET (CFET).","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"3966-3973"},"PeriodicalIF":2.9,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dissipative Transport and Self-Heating Effects in Dirac-Source FETs 狄拉克源场效应管的耗散输运和自热效应

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-10 DOI: 10.1109/TED.2025.3583694

Zeyu Zhang;Yunxiang Yang;Jing Guo;Fei Liu

{"title":"Dissipative Transport and Self-Heating Effects in Dirac-Source FETs","authors":"Zeyu Zhang;Yunxiang Yang;Jing Guo;Fei Liu","doi":"10.1109/TED.2025.3583694","DOIUrl":"https://doi.org/10.1109/TED.2025.3583694","url":null,"abstract":"Dirac-source FETs (DSFETs) are considered as a promising candidate for future low-power electronics. However, the impacts of the electron–phonon (e–ph) scattering effect and the self-heating effect (SHE) on subthreshold swing (SS) and the electron current have not been addressed thoroughly. In this article, we investigate the e–ph scattering effect and SHE in DSFETs using nonequilibrium Green’s function (NEGF) method. We simulate a specific DSFET using MoS2 as the channel and the drain material. The results show that the SS of the DSFET is degraded by the e–ph scattering from 48 to 58 mV/decade at bias voltage <inline-formula> <tex-math>${V} _{text {d}}=0.5$ </tex-math></inline-formula> V, and the <sc>ON</small>-state current is degraded by the e–ph scattering about 5%. SHE has almost no effect on the SS and the <sc>ON</small>-state current. The degradation of SS by e–ph scattering is attributed to the thermionic emission of carriers at the drain end, rendering the Dirac source less effective. We also present a comparative analysis between the DSFET and the MoS2-FET, and SHE in MoS2-FET is severer than that in DSFET even with smaller <sc>ON</small>-state current. A detailed examination of the effects of overlap length in the DSFET and the energy gap of the source graphene on SS and current performance is also presented.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4528-4536"},"PeriodicalIF":2.9,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel p-Type Bulk-Inserted Bitline Pad Structure for Efficient Erase Operation in Vertical NAND Flash Memory 垂直NAND闪存高效擦除的新型p型块插入位线衬垫结构

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-10 DOI: 10.1109/TED.2025.3583274

Choasub Kim;Jiwook Hong;Moonchurl Kim;Hyoungsub Kim;Jongwook Jeon

引用次数: 0

High-Performance Perovskite-Inspired Lanthanohalide Memristors for Phototunable Neuromorphic Applications 用于光可调神经形态应用的高性能钙钛矿启发的卤化镧记忆电阻器

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-08 DOI: 10.1109/TED.2025.3584289

Manvendra Chauhan;Satinder K. Sharma

{"title":"High-Performance Perovskite-Inspired Lanthanohalide Memristors for Phototunable Neuromorphic Applications","authors":"Manvendra Chauhan;Satinder K. Sharma","doi":"10.1109/TED.2025.3584289","DOIUrl":"https://doi.org/10.1109/TED.2025.3584289","url":null,"abstract":"Nonvolatile memory (NVM) devices that can respond to optical stimuli are emerging as key enablers for next-generation neuromorphic computing, integrating optical and electronic functionalities. Among the materials being explored, perovskite has emerged as a standout candidate for optically active resistive random access memory (ReRAM). However, a major hurdle remains: the long-term stability of the switching layer (SL). In light of this, we present a lead-free and highly stable novel AgEuBr4 perovskite-like lanthanohalide, designed specifically to serve as an SL for electro-optical ReRAMs. The AgEuBr4 thin films were deposited using a one-step spin-coating method on FTO substrates and subsequently annealed at <inline-formula> <tex-math>$260~^{circ }$ </tex-math></inline-formula>C. To further enhance performance, a ~10-nm HfOX passivation layer is applied via atomic layer deposition (ALD). The Ag top electrodes (TEs) were patterned using an in-house dry-etching technique. The fabricated ReRAM devices displayed impressive bipolar NVM behavior under both dark conditions and ultraviolet (UV) (<inline-formula> <tex-math>$boldsymbol {lambda } =365$ </tex-math></inline-formula> nm) irradiation. When operated under UV irradiation, the ReRAM devices exhibit two more resistive states distinct from the dark condition operation while operating at lower voltages (±0.30 V) and ultrafast switching duration of 10.07 ns, ensuring energy efficiency and fast data processing. Also, a high low-resistance state (LRS)/HRS ratio (~9526.35), excellent endurance (51696 cycles), and robust retention (62986 s) under UV irradiation set a new standard in performance. Furthermore, phototunable neuromorphic behavior was validated through both long-term potentiation (LTP), short-term plasticity (STP), and paired-pulse facilitation (PPF)% measurements, where the device exhibited significantly enhanced conductance modulation and synaptic facilitation under UV exposure, highlighting its applicability in light-assisted neuromorphic computing.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4549-4557"},"PeriodicalIF":2.9,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Sensitive and Fast Response AlGaN-Based MSM Solar-Blind Photodetector 高灵敏度、快速响应algan基MSM日盲光电探测器

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-08 DOI: 10.1109/TED.2025.3584324

Balkrishna Choubey;Kankat Ghosh

{"title":"Highly Sensitive and Fast Response AlGaN-Based MSM Solar-Blind Photodetector","authors":"Balkrishna Choubey;Kankat Ghosh","doi":"10.1109/TED.2025.3584324","DOIUrl":"https://doi.org/10.1109/TED.2025.3584324","url":null,"abstract":"The aluminum gallium nitride (AlGaN)/AlN/ sapphire-based solar-blind metal-semiconductor–metal (MSM) photodetectors are highly valued for applications that require mechanical and thermal stability under varying environmental conditions due to advantages over bulky and fragile photomultipliers, including lightweight design, low energy consumption, and high durability. Thus, this study demonstrates the critical analysis of the fabrication and characterization of AlGaN-based solar-blind MSM photodetector. The high crystalline quality [i.e., average threading dislocation density ~10.8/cm2 and rms roughness ~621 pm for <inline-formula> <tex-math>$2times 2~mu {text {m}^{2}}$ </tex-math></inline-formula> area] effectively suppresses the leakage (dark) current to <inline-formula> <tex-math>$65.2times 10^{-{12}}$ </tex-math></inline-formula> A at 5 V. Under 255 nm illumination, the photocurrent reaches to <inline-formula> <tex-math>$sim 4times 10^{-{6}}$ </tex-math></inline-formula> A at 5 V, which is approximately five orders of magnitude higher than the dark current. The photodetector demonstrates exceptional performance metrics, including the high responsivity of ~13 A/W, ultraviolet to visible rejection ratio of <inline-formula> <tex-math>$1.3times 10^{{3}}$ </tex-math></inline-formula>, and the detection rate of <inline-formula> <tex-math>$3times 10^{{11}}$ </tex-math></inline-formula> Jones at 5 V, surpassing many recently reported devices. Furthermore, it exhibits an ultrafast temporal response, with rise and fall times of ~24 and <inline-formula> <tex-math>$sim 23~mu $ </tex-math></inline-formula>s, respectively.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4204-4210"},"PeriodicalIF":2.9,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Overshoot-Enabled Hard Excitation in a 1-THz Gyrotron With Flat-Top-Field Pulsed Magnet 平顶场脉冲磁体1thz回旋管的超调使能硬激励

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-08 DOI: 10.1109/TED.2025.3584316

Jia-Ji Feng;Chao-Hai Du;Feng Zhang;Xin-Yin Cao;Xian-Fei Chen;Shao-Zhe Zhang;Xiao-Tao Han;Hou-Xiu Xiao

{"title":"Overshoot-Enabled Hard Excitation in a 1-THz Gyrotron With Flat-Top-Field Pulsed Magnet","authors":"Jia-Ji Feng;Chao-Hai Du;Feng Zhang;Xin-Yin Cao;Xian-Fei Chen;Shao-Zhe Zhang;Xiao-Tao Han;Hou-Xiu Xiao","doi":"10.1109/TED.2025.3584316","DOIUrl":"https://doi.org/10.1109/TED.2025.3584316","url":null,"abstract":"Advances in high-stability flat-top pulsed magnets and programmable power supplies have enabled the precisely controllable radiation of gyrotrons exceeding the 1-THz band. However, high-efficiency operation under the “hard-excitation” condition and mode shadowing is still difficult for terahertz gyrotrons. In this article, a novel temporal profile of the pulsed field is introduced to achieve efficiency enhancement and operating-domain extension. An overshoot at the pulse front realizes smooth conversion between the soft and hard excitation regions within the pulsewidth scale. As an advanced demonstration, a 1-THz gyrotron equipped with a 40-T flat-top magnet is developed and investigated. Steady oscillation with power above 8 kW at 1.001 THz is predicted in this drastic time-varying system. The efficiency is more than doubled compared to the value that can be directly excited. The feasibility of this waveform based on the model predictive control (MPC) is also discussed. This scheme is generalized as it imposes no specific requirements on the gyrotron itself. This work will promote the research on the high-power terahertz sources and their applications such as high-resolution spectrometers.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4456-4462"},"PeriodicalIF":2.9,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144704990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Degradation Mechanisms of p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors Under High-Temperature Reverse Bias Stress 高温反向偏置应力下p-GaN栅极AlGaN/GaN高电子迁移率晶体管的降解机理

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-08 DOI: 10.1109/TED.2025.3583704

Chengbing Pan;Wenbo Wang;Ruomeng Zhang;Xinyuan Zheng;Xueyan Li;Yesen Han;Yibo Ning;Haodong Zhang;Lixia Zhao

{"title":"Degradation Mechanisms of p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors Under High-Temperature Reverse Bias Stress","authors":"Chengbing Pan;Wenbo Wang;Ruomeng Zhang;Xinyuan Zheng;Xueyan Li;Yesen Han;Yibo Ning;Haodong Zhang;Lixia Zhao","doi":"10.1109/TED.2025.3583704","DOIUrl":"https://doi.org/10.1109/TED.2025.3583704","url":null,"abstract":"The p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) are promising for many applications, including electric vehicles, radar, etc. However, the threshold voltage (<inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula>) instability and dynamicON-resistance (<inline-formula> <tex-math>${R}_{text {DSON}}$ </tex-math></inline-formula>) degradation of p-GaN gate AlGaN/GaN HEMTs remain a concern. Here, the degradation behaviors of threshold voltage and dynamic <inline-formula> <tex-math>${R}_{text {DSON}}$ </tex-math></inline-formula> of p-GaN gate AlGaN/GaN HEMTs were systematically investigated. An anomalous shift of threshold voltage was observed with a slight negative shift in the first stage (<192> <tex-math>${R}_{text {DSON}}$ </tex-math></inline-formula> after 432 h stress increased by approximately 54.5%. The thermal resistance increased by 0.78 K/W for the chip and 0.38 K/W for the die attach. The defects evolution in the epilayers during the stress was measured using deep-level transient spectroscopy. The results show that the electron trap concentration decreased, and a new hole trap level appeared in the AlGaN/GaN region after the degradation. In the first stage (<192> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula> shift. Afterward, hole emission leads to the net negative charges beneath the gate, causing the positive <inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula> shift and the increase of dynamic <inline-formula> <tex-math>${R}_{text {DSON}}$ </tex-math></inline-formula>. These results can help to further improve the reliability of p-GaN gate AlGaN/GaN HEMTs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4056-4062"},"PeriodicalIF":2.9,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144704983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermionic Electron Sources Based on Microscale Tungsten Filaments on a Glass Wafer 基于玻璃晶圆上微尺度钨丝的热离子电子源

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-08 DOI: 10.1109/TED.2025.3584873

Weidong Rao;Yuqiang Yu;Yang Li;Dengzhu Guo;Zhiwei Li;Xianlong Wei

{"title":"Thermionic Electron Sources Based on Microscale Tungsten Filaments on a Glass Wafer","authors":"Weidong Rao;Yuqiang Yu;Yang Li;Dengzhu Guo;Zhiwei Li;Xianlong Wei","doi":"10.1109/TED.2025.3584873","DOIUrl":"https://doi.org/10.1109/TED.2025.3584873","url":null,"abstract":"Glass wafers exhibit superior dielectric breakdown strength, improved vacuum sealing properties, and optical transparency when compared with silicon wafers, making them more suitable for applications in on-chip vacuum electronic devices (VEDs). While previous on-chip electron sources were mostly fabricated on Si wafers or substrates, this brief presents wafer-scale fabricated thermionic electron sources (TESs) on a glass wafer by employing microscale suspended W filaments. To enhance thermionic emission performances of the emitters, a layer of Y2O3 is deposited on microscale W filaments, which can significantly increase their emission current at specific power by a magnitude of nearly five orders. Low work function of Y2O3 together with high melting temperature of W enables a single microscale thermionic emitter to exhibit an emission current of up to 7.12 mA and an emission density of up to 89 A/cm2. While on-chip thermionic emitters exhibit degraded stability at poorer vacuum and higher emission current, a closed-loop feedback control technique can effectively stabilize the emission current.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4580-4584"},"PeriodicalIF":2.9,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of Local Layout Effects in Field-Effect Transistors Using Neural Networks 场效应晶体管局部布局效应的神经网络分析

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-08 DOI: 10.1109/TED.2025.3582550

Michael D. Monkowski;Richard A. Wachnik;Michael A. Kazda;Mark N. Wegman

{"title":"Analysis of Local Layout Effects in Field-Effect Transistors Using Neural Networks","authors":"Michael D. Monkowski;Richard A. Wachnik;Michael A. Kazda;Mark N. Wegman","doi":"10.1109/TED.2025.3582550","DOIUrl":"https://doi.org/10.1109/TED.2025.3582550","url":null,"abstract":"We describe a method for the creation of a compact model for local layout effects (LLEs) using pixelated images of the layers of physical layouts as input features. We incorporate these together with electrical measurements of devices on an integrated circuit as an input to a neural network. The neural network combines a variational autoencoder (VAE) with a regression network and is used to identify important features of the layout. Then, using a parallel feature neural network to model the effects of those features, we can determine the functional dependence of those effects. Finally, we incorporate those functions into our existing compact model. Because the VAE takes the full design as an input, it represents every possible relevant feature. The model visually reveals which features are important, and these visual features can be converted to numerical features. The existing compact models rely on engineers to determine a priori which features are important, but important dimensions on novel devices can easily be missed. We also show that the constraints of the latent space of the VAE allow us to determine during inference whether a particular device geometry is within the domain of the training data. In addition, we describe a process for training the VAE that improves its ability to interpolate more accurately.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4347-4361"},"PeriodicalIF":2.9,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0