IEEE Transactions on Electron Devices最新文献_第2页

State-Aware Multibit Write Algorithm for TiOx-Based Resistive Switching Memory Devices

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-08 DOI: 10.1109/TED.2024.3521653

Yu Shi;Manoj Sachdev;Guo-Xing Miao

引用次数: 0

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With TiO2 Seed Layer for Enhanced Ferroelectricity

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-08 DOI: 10.1109/TED.2024.3524953

Huan Liu;Dongya Li;Zhi Gong;Peiyuan Du;Fei Yu;Chengji Jin;Mengnan Ke;Xiao Yu;Yan Liu;Yue Hao;Genquan Han

{"title":"Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With TiO2 Seed Layer for Enhanced Ferroelectricity","authors":"Huan Liu;Dongya Li;Zhi Gong;Peiyuan Du;Fei Yu;Chengji Jin;Mengnan Ke;Xiao Yu;Yan Liu;Yue Hao;Genquan Han","doi":"10.1109/TED.2024.3524953","DOIUrl":"https://doi.org/10.1109/TED.2024.3524953","url":null,"abstract":"In this study, the influence of TiO2 seed layers in ferroelectric capacitors with HfZrOx (HZO) solid-solution and HfO2/ZrO2 superlattice structures has been explored. Due to the insertion of the TiO2 seed layer, significant enhancement in ferroelectric properties and reduction in coercive field (<inline-formula> <tex-math>${E}_{text {c}}$ </tex-math></inline-formula>) has been achieved. In addition, samples with the TiO2 seed layer exhibit decent ferroelectricity at a low crystalline annealing temperature of <inline-formula> <tex-math>$300~^{circ }$ </tex-math></inline-formula>C, making them compatible with back-end-of-line (BEOL) processes. Especially, the HfO2/ZrO2 superlattice ferroelectric thin film with a 1-nm TiO2 seed layer exhibits outstanding remnant polarization (<inline-formula> <tex-math>$2{P}_{text {r}}$ </tex-math></inline-formula>) of approximately <inline-formula> <tex-math>$51.4~mu $ </tex-math></inline-formula>C/cm2 with a low <inline-formula> <tex-math>${E}_{text {c}}$ </tex-math></inline-formula> of 0.9 MV/cm, reducing the operating voltage to 1.2 V, and demonstrating stable endurance larger than <inline-formula> <tex-math>$10^{{9}}$ </tex-math></inline-formula> cycles. This study presents a robust approach with BEOL process compatibility for enhancing both the ferroelectric properties and the reliability of future ferroelectric devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"665-670"},"PeriodicalIF":2.9,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical and Thermal Effect of Boron Nitride Nanoplate Additive on Quantum Dot-Converted Light-Emitting Diodes

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-07 DOI: 10.1109/TED.2024.3521954

Meng Chen;Zhongzhi Tian;Qian Feng;Yonghui Zhang;Chong Geng;Zhencan F. Fan;Jay Guoxu Liu;Shu Xu

{"title":"Optical and Thermal Effect of Boron Nitride Nanoplate Additive on Quantum Dot-Converted Light-Emitting Diodes","authors":"Meng Chen;Zhongzhi Tian;Qian Feng;Yonghui Zhang;Chong Geng;Zhencan F. Fan;Jay Guoxu Liu;Shu Xu","doi":"10.1109/TED.2024.3521954","DOIUrl":"https://doi.org/10.1109/TED.2024.3521954","url":null,"abstract":"Quantum dot-converted light-emitting diodes (Qc-LEDs) have attracted significant interest due to their superior color performance in advanced lighting and display applications. Despite this, their efficiency is often compromised by heat-induced fluorescence quenching of quantum dots (QDs). Boron nitride nanoplates (BNPs) are known for their excellent heat dissipation properties, making them a promising additive to reduce heat accumulation in Qc-LEDs. However, BNPs also possess high light reflectivity that traps light within the device, diminishing their overall effectiveness. In this study, we explore the comprehensive optical and thermal impacts of BNPs on Qc-LEDs through simulations and experiments. Results show that 1 wt% BNPs strike a suitable balance, reducing temperature without significantly affecting light extraction efficiency. In contrast, 3 wt% BNPs lower the operating temperature of Qc-LEDs from <inline-formula> <tex-math>$95.3~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$65.9~^{circ }$ </tex-math></inline-formula>C at 150 mA but also decrease light intensity by 22% compared to Qc-LEDs with 1 wt% BNPs. This research provides valuable insights for optimizing Qc-LED performance using BNPs and other thermally conductive 2-D nanoadditives.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"761-768"},"PeriodicalIF":2.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Broadband 4H-SiC Photodetectors With Gold Nanoparticles: Expanding Sensitivity From UV to SWIR Spectrum

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-07 DOI: 10.1109/TED.2024.3522213

Lulu Geng;Guohui Li;Wenbin Sun;Xianyong Yan;Wenyan Wang;Ting Ji;Zhihui Chen;Kaili Mao;Yuan Tian;Yanxia Cui

{"title":"Enhancing Broadband 4H-SiC Photodetectors With Gold Nanoparticles: Expanding Sensitivity From UV to SWIR Spectrum","authors":"Lulu Geng;Guohui Li;Wenbin Sun;Xianyong Yan;Wenyan Wang;Ting Ji;Zhihui Chen;Kaili Mao;Yuan Tian;Yanxia Cui","doi":"10.1109/TED.2024.3522213","DOIUrl":"https://doi.org/10.1109/TED.2024.3522213","url":null,"abstract":"4H-silicon carbide (4H-SiC) is promising for photodetectors (PDs) capable of operating at high voltages and elevated temperatures. However, the wide bandgap of 4H-SiC (3.26 eV) restricts its applications to the ultraviolet (UV) range below 400 nm. It is essential to develop 4H-SiC PDs with a broadband response covering the UV to short-wavelength infrared (SWIR) spectrum. This study demonstrates a 4H-SiC broadband PD with sensitivity extending from UV to SWIR range up to 2200 nm. The superior performance is attributed to the presence of numerous defect centers forming deep energy levels within the 4H-SiC bandgap, which allows the absorption of visible (VIS) and SWIR photons with energies lower than the bandgap. Moreover, the incorporation of thermally annealed gold nanoparticles (Au NPs) induces localized plasmonic resonance, significantly enhancing the photocurrent over a broadband wavelength range while maintaining the dark current. This leads to superior weak light detection capabilities for the plasmonic device compared to the reference device without Au NPs. At the enhancement peak (under 860-nm laser illumination), the plasmonic device achieves a minimum detectable power density of <inline-formula> <tex-math>$0.488~mu $ </tex-math></inline-formula>W/cm2. Notably, the plasmonic PD exhibits a 3260% increase in the photo-to-dark current ratio (PDCR), with an external quantum efficiency (EQE) enhancement factor reaching a maximum of 3166%. These results lay a foundation for advancing the development of UV-SWIR broadband SiC PDs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"784-790"},"PeriodicalIF":2.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical and Experimental Investigations on Input Couplers for a G-Band Gyro-TWT

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-06 DOI: 10.1109/TED.2024.3523264

Taotao Mao;Zhi Yi;Tao Song;Chen Zhang;Xu Qi;Peisheng Liang;Chenghui Zhu;Yuxuan Chai;Ke Chen;Jiao Jiao;Na Yao;Kaichun Zhang;Zhenhua Wu;Yanyu Wei;Yubin Gong;Wei Wang;Diwei Liu

引用次数: 0

Demonstration of a Ku-Band Continuous Wave Tunable Klystron With Tuning Range of 1.2 GHz

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-06 DOI: 10.1109/TED.2024.3521916

Xin Guo;Zhiqiang Zhang;Honghong Gu;Yuan Liang;Yaogen Ding;Haibing Ding;Bin Shen

{"title":"Demonstration of a Ku-Band Continuous Wave Tunable Klystron With Tuning Range of 1.2 GHz","authors":"Xin Guo;Zhiqiang Zhang;Honghong Gu;Yuan Liang;Yaogen Ding;Haibing Ding;Bin Shen","doi":"10.1109/TED.2024.3521916","DOIUrl":"https://doi.org/10.1109/TED.2024.3521916","url":null,"abstract":"This article introduces the design and experimental study of a Ku-band continuous wave tunable klystron. The device mentioned above adopts a single electron beam and six tunable resonant cavities, it operates at a cathode voltage of 9.5 kV, and the cathode emission current is 1.05 A with an axial guiding magnetic field of 0.34 T. To reduce the heat dissipation of the collector and improve the efficiency, the device adopts a four-stage depressed collector design, and the collector adopts forced air cooling for heat dissipation. Finally, the assembled sample tube is tested in detail. The dc beam transmission is over 99% and the high-frequency beam transmission rate is above 97%. The device can output continuous wave power of over 2.6 kW in 1.2-GHz tuning frequency range, with 1-dB instantaneous bandwidth (BW) exceeding 60 MHz at each working frequency channel. Tube gain exceeds 51 dB, and efficiency exceeds 40%. The experimental results are in good agreement with those obtained by the 1-D and 3-D simulation. The development of this device provides important technical reference for wideband mechanically tuned klystron products and has significant importance.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"886-891"},"PeriodicalIF":2.9,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143373125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Signal Margin, Density, and Scalability of 3-D DRAM: A Comparative Study of Two Bitline Architectures

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-06 DOI: 10.1109/TED.2024.3520074

Xiangjin Wu;Luke R. Upton;Jian Chen;Po-Kai Hsu;Shimeng Yu;H.-S. Philip Wong

{"title":"Signal Margin, Density, and Scalability of 3-D DRAM: A Comparative Study of Two Bitline Architectures","authors":"Xiangjin Wu;Luke R. Upton;Jian Chen;Po-Kai Hsu;Shimeng Yu;H.-S. Philip Wong","doi":"10.1109/TED.2024.3520074","DOIUrl":"https://doi.org/10.1109/TED.2024.3520074","url":null,"abstract":"Dynamic random access memory (DRAM) density scaling can be enabled by monolithically stacking DRAM cells in the vertical direction (3-D DRAM). However, there is no analysis of whether 3-D DRAM with horizontal bitline (HBL) or vertical bitline (VBL) is more scalable. Here, we evaluate the signal margin and bitcell density of HBL versus VBL 3-D DRAM using process and circuit simulations, paying attention to the impact of parasitic capacitance. We study the minimum required storage capacitors to provide sufficient signal margin to counterbalance parasitic bitline (BL) capacitance and BL-BL coupling noise. We model three different staircase contact structures and evaluate their impact on bitcell density. To surpass the density of 12-nm 4F2 DRAM while maintaining robust signal margin, VBL 3-D DRAM requires ~50 layers, which is 35% fewer than HBL. In addition, we identify VBL 3-D DRAM as a better candidate for future scaling toward short-BL (small storage capacitor) 3-D DRAM using low-leakage access transistors, with up to <inline-formula> <tex-math>$4times $ </tex-math></inline-formula> higher density versus 12-nm 2-D DRAM with 128 cells per BL.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"671-677"},"PeriodicalIF":2.9,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Transactions on Electron Devices Information for Authors IEEE电子器件信息汇刊

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-03 DOI: 10.1109/TED.2024.3516223

引用次数: 0

IEEE ELECTRON DEVICES SOCIETY 电子器件学会

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-03 DOI: 10.1109/TED.2024.3516221

引用次数: 0

Photochemical Synthesis of Ag Nanoparticles Decorated on ZnO Nanorods for MSM-Structured Humidity Sensors

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-01 DOI: 10.1109/TED.2024.3519058

Yu-Jhih Chu;Sheng-Joue Young;Yi-Hsing Liu;Shoou-Jinn Chang

{"title":"Photochemical Synthesis of Ag Nanoparticles Decorated on ZnO Nanorods for MSM-Structured Humidity Sensors","authors":"Yu-Jhih Chu;Sheng-Joue Young;Yi-Hsing Liu;Shoou-Jinn Chang","doi":"10.1109/TED.2024.3519058","DOIUrl":"https://doi.org/10.1109/TED.2024.3519058","url":null,"abstract":"In this article, we describe the efficient humidity sensors (HR) designed via pure ZnO nanorods (NRDs) and silver (Ag) nanoparticles (NPs)-decorated ZnO NRD grown on the surface of glass substrate by the hydrothermal method during 6 h of the environment at <inline-formula> <tex-math>$90~^{circ }$ </tex-math></inline-formula>C. The physical characteristics of the ZnO NRD and Ag-ZnO NRD were analyzed via field-emission scanning electron microscopy, X-ray diffraction analysis, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. The optical properties were analyzed via photoluminescence (PL). In humidity (RH) measurement, the Ag-ZnO NRD displayed high photo-to-dark current ratios (PDCRs), low rise (<inline-formula> <tex-math>${T} _{text {r}}$ </tex-math></inline-formula>), and fall times (<inline-formula> <tex-math>${T} _{text {f}}$ </tex-math></inline-formula>) of 37.5, 9.6 s, and 17.3 s at RH 80% environment. The Ag-ZnO NRD HR exhibited greater results than ZnO HR. The above results indicate that the ZnO NRD decorated with Ag NPs can effectively improve the sensing performance of humidity sensor.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"830-835"},"PeriodicalIF":2.9,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0