Evaluation of Quasi-Ballistic Transport Behaviors in Ge pMOSFETs With NiGe Metal Source/Drain

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-08-14 DOI:10.1109/TED.2025.3590364

Rui Su;Jing Yan;Dawei Gao;Junkang Li;John Robertson;Rui Zhang

引用次数: 0

Abstract

The quasi-ballistic transport characteristics in the Ge pMOSFETs with NiGe metal source/drain (S/D) are analyzed. It is found that the Ge pMOSFETs represent a remarkable velocity overshoot and the injection velocity of the hole achieves

$1.8\times \,\, 10^{{7}}$

cm/s. Additionally, the Ge pMOSFETs with metal S/D exhibit a much smaller 1/Bsat than those in Ge-OI pMOSFETs with conventional ion implantation S/D. These phenomena are attributable to the improved lateral electrical field at the metal S/D edge. It is suggested that the metal S/D structure is an effective booster to increase the electrical performance of ballistic transport Ge pMOSFETs.

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Ge金属源/漏极pmosfet准弹道输运行为的评价

分析了金属源极/漏极（S/D）锗pmosfet的准弹道输运特性。结果表明，Ge pmosfet表现出显著的速度超调，空穴注入速度达到$1.8\倍\，\,10^{{7}}$ cm/s。此外，与传统离子注入S/D的Ge- oi pmosfet相比，采用金属S/D的Ge- oi pmosfet表现出更小的1/Bsat。这些现象可归因于金属S/D边侧电场的改善。结果表明，金属S/D结构是提高弹道输运Ge pmosfet电性能的有效助推器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.