IEEE Transactions on Electron Devices最新文献

{"title":"Design and Fabrication of A1 Mode Lamb Wave Solidly Mounted Resonator Operating Above 6 GHz Based on Single-Crystalline LiNbO3 Thin Film","authors":"Yuedong Wang;Peiran Li;Zijie Wei;Wei Fan;Sijia Huo;Dahao Wu;Yao Shuai;Bin Peng;Xinqiang Pan;Chuangui Wu;Wanli Zhang","doi":"10.1109/TED.2025.3543805","DOIUrl":"https://doi.org/10.1109/TED.2025.3543805","url":null,"abstract":"Laterally excited bulk acoustic wave resonators (XBAR) using the first-order anti-symmetric (A1) mode Lamb wave based on lithium niobate (LiNbO3) have shown great potential in 5G and future 6G communication band for its large electromechanical coupling coefficient. Solidly mounted resonator (SMR) structure using Bragg reflector can both improve the structural stability and suppress spurious wave modes effectively. In this work, A1 mode Lamb wave SMR is designed. The effects of LiNbO3 cut angle, LiNbO3 film thickness, and number of the Bragg reflection layer have been studied in simulations. In experiments, a 4-in Y128-cut single-crystal LiNbO3 film was fabricated with the designed SiO2/Ta2O5 Bragg reflector. Then, the designed A1 mode Lamb wave resonator is prepared with the LiNbO3 single crystal film. The measured resonant frequency of the prepared SMR is 6.231 GHz, while the anti-resonant frequency is 6.610 GHz. The calculated electromechanical coupling coefficient is 15.46% and the maximum quality factor is 491.34. This work demonstrates that A1 mode Lamb wave resonators with Bragg reflector can achieve high performance to meet the requirements of 5G and 6G communications for filters.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"2013-2019"},"PeriodicalIF":2.9,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Dimensional Field-Effect Transistors Based on Lateral Heterojunctions of Transition Metal Dichalcogenides: Dissipative Quantum Transport Modeling","authors":"Giuseppe Lovarelli;Fabrizio Mazziotti;Demetrio Logoteta;Giuseppe Iannaccone","doi":"10.1109/TED.2025.3534164","DOIUrl":"https://doi.org/10.1109/TED.2025.3534164","url":null,"abstract":"Reducing the contact resistance of field-effect transistors (FETs) based on 2-D materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process. Suitably designed lateral heterojunctions provide an opportunity to independently tailor the contact and channel properties to optimize contact resistance. Inspired by the recent experimental demonstration of a 2-D p-type Schottky barrier, here we use quantum transport simulations to estimate the performance of p-type transistors in which the channel consists of a lateral heterostructure of NbS2/MoS2/NbS2 (semimetal-semiconductor–semimetal). We find that the gate alignment with the channel is a critical design parameter, strongly influencing the capability of the gate to modulate the Schottky barrier at the MoS2/NbS2 interface. This effect is also found to significantly affect the scaling behavior of the device.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"2025-2031"},"PeriodicalIF":2.9,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Frame-Unit Operating Neuron Circuits for Hardware Recurrent Spiking Neural Networks","authors":"Yeonwoo Kim;Bosung Jeon;Jonghyuk Park;Woo Young Choi","doi":"10.1109/TED.2025.3546185","DOIUrl":"https://doi.org/10.1109/TED.2025.3546185","url":null,"abstract":"A frame-unit operating neuron circuit (f-NC) for hardware recurrent spiking neural networks (RSNNs) is proposed. The proposed f-NC enables the two essential features required in RSNNs, which have been challenging to implement in conventional integrate-and-fire (I&F) neuron-based systems: 1) the ability to recurrently feed the output from the previous state (<inline-formula> <tex-math>${t} -1$ </tex-math></inline-formula>) as input to the current state (t) in the frame unit, and 2) the implementation of a <inline-formula> <tex-math>$tanh $ </tex-math></inline-formula> activation function. System-level simulations of the Free Spoken Digits Dataset are performed to confirm the operation of RSNNs with f-NCs with charge-trap flash (CTF)-based <sc>and</small>-type synaptic arrays, which store 16-state weights and operate array- and circuit-level vector-matrix multiplication (VMM). It shows 97.05% RSNN inference accuracy, including quantized synaptic weight and nonidealities in the activation function of the neuron circuit.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1795-1801"},"PeriodicalIF":2.9,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive Optimization Strategies for InSnZnO Grade-Channel Thin-Film Transistors via Atomic Layer Deposition","authors":"Yu Zhang;Binbin Luo;Jiong Liu;Bojia Chen;Xinming Wu;Xuefeng Wu;Rongxu Bai;David W. Zhang;Qingqing Sun;Shen Hu;Li Ji","doi":"10.1109/TED.2025.3544998","DOIUrl":"https://doi.org/10.1109/TED.2025.3544998","url":null,"abstract":"The amorphous oxide semiconductors (AOSs) have been widely explored for thin-film transistors (TFTs). However, a tradeoff persists between high field-effect mobility and low threshold voltage attributed to percolation conduction, necessitating comprehensive optimization. Herein, the grade-channel InSnZnO (ITZO) TFTs with enhanced performance synthesized by atomic layer deposition (ALD) were investigated by the stoichio-metric and structure optimization in channel. The relationship between stoichiometric of channel and electrical transport property has been investigated in single-layer-channel ITZO TFTs. Then, we investigated the influence of vertical stoichiometric distribution on performance enhancement in bilayer-channel and grade-channel ITZO TFTs. The ITZO TFTs based on grade channel exhibit superior characteristics, including remarkable mobility of 65.88 cm2/V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> s, fantastic <sc>on</small>-/<sc>off</small>-ratio of <inline-formula> <tex-math>$10^{{10}}$ </tex-math></inline-formula>, and excellent subthreshold swing (SS) of 72.85 mV/dec, which weaken the tradeoff. Furthermore, the positive bias stress (PBS) instability test indicates that the grade-channel structure also enhances PBS stability beyond mobility improvement. These findings are promising for the performance enhancement of high-mobility AOS TFTs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1815-1821"},"PeriodicalIF":2.9,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Circuital Model of Sb₂Se₃ Solar Cells as Memdiode Devices for Neuromorphic Applications","authors":"Didac Vega;Rodrigo Picos;Angel Rodríguez;Yash Gupta;Oscar Camps;Edgardo Saucedo;Joaquim Puigdollers;Carola de Benito;Jordi Llorca;Stavros G. Stavrinides","doi":"10.1109/TED.2025.3546192","DOIUrl":"https://doi.org/10.1109/TED.2025.3546192","url":null,"abstract":"Memristors are one of the four fundamental electrical components, relating electrical quantities such as current, voltage, charge (integral of current), and flux (integral of voltage). First proposed in 1971 and experimentally demonstrated in 2009, memristors have garnered significant research interest due to their unique properties. Among their many applications, neuromorphic computing and memory storage stand out. However, memristive behavior is not limited to standalone devices; it can also manifest as a parasitic effect in various systems. Despite this, research on parasitic memristive effects remains limited, especially when compared to studies on resistors and capacitors. In this work, we present experimental evidence demonstrating that a Mo/MoSe2/Sb2Se3 (10 nm)/CdS (2 nm)/indium titanium oxide (ITO) substrate configuration, originally designed as a solar cell, exhibits memristive behavior. This behavior is investigated by applying both triangular waveforms and a series of voltage pulses to the solar cell contacts while recording the current transient response. Our proposed model builds upon the standard single-diode solar cell model, with modifications to incorporate the observed memristive effects as second-order, parasitic elements. The experimental data show that the proposed model fits well with the experimental results, confirming the memristive behavior in the system.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"2078-2085"},"PeriodicalIF":2.9,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10916561","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing Ferroelectricity of HfZrOₓ-Based Ferroelectric Capacitors by Quenching With Liquid Nitrogen","authors":"Chun-Yi Kuo;Kai-Sheun Lee;Yi-Fan Chen;Yung-Hsien Wu","doi":"10.1109/TED.2025.3545008","DOIUrl":"https://doi.org/10.1109/TED.2025.3545008","url":null,"abstract":"To induce the ferroelectric (FE) phase in the HfZrOx (HZO) film, the cooling stage during the crystallization annealing process assumes a crucial role. A more rapid cooling rate typically favors the formation of a higher proportion of the orthorhombic phase, which necessitates a significant temperature difference during the cooling process. In order to establish an adequately substantial temperature difference that aligns with back-end-of-line (BEOL) compatibility, the utilization of liquid nitrogen (LN2) was implemented for rapid quenching in this study. In contrast to the conventional cooling approach within an rapid thermal annealing (RTA) chamber (a cooling rate of 3.1 °C/s), the utilization of LN2 quenching (cooling rate of 49.6 °C/s) for HZO-based FE capacitors showcases noteworthy benefits. These include a 31.5% enhancement in remanent polarization (<inline-formula> <tex-math>${P} _{text {r}}$ </tex-math></inline-formula>) and a 2.5-fold improvement in switching speed, enabling a promising pathway for the advancement of FE device performance.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1769-1773"},"PeriodicalIF":2.9,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"X-Ray Irradiation-Induced VTH Instability in Schottky-Gate p-GaN HEMTs","authors":"Yu Rong;Feng Zhou;Wenfeng Wang;Can Zou;Junfan Qian;Weizong Xu;Fangfang Ren;Dong Zhou;Dunjun Chen;Youdou Zheng;Rong Zhang;Hai Lu","doi":"10.1109/TED.2025.3545390","DOIUrl":"https://doi.org/10.1109/TED.2025.3545390","url":null,"abstract":"p-GaN Schottky-gate structure E-mode HEMTs have great potential for irradiation applications, yet their threshold voltage (<inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula>) instability is still under investigation. In this work, by constructing an X-ray irradiation online monitoring system with adjustable dose and integrated peripheral bias circuit, irradiation dose- and drain bias-dependent <inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula> instability are comprehensively investigated. Under irradiation-only conditions, the device exhibits a negative <inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula> shift with low-dose irradiation, followed by a positive <inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula> shift with high-dose irradiation. By performing numerical simulations, Hall measurements, and C–V tests, it is revealed that the negative <inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula> shift is dominated by the p-GaN activation-induced <inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula> instability mechanism, rather than the gate-related hole injection mechanism. The corresponding activation efficiency of p-GaN increases from 1.3% (unirradiated device) to 1.5% (0.11-Sv irradiation). Furthermore, acceptor-like defects are identified as the main cause of positive <inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula> shift. The low-frequency 1/f noise experimental results show that the density of defect states at different doses is higher than that of unirradiated devices. Moreover, under the synergistic effect of irradiation and drain bias, the device still exhibits a positive <inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula> shift, which can be explained by the modified charge storage mechanism. These results provide important insights into the <inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula> instability of p-GaN Schottky-gate structure high electron mobility transistors (p-GaN HEMTs) under irradiation conditions.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1689-1694"},"PeriodicalIF":2.9,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"WSe₂ and CuO Blend-Based Broadband Photodetector With Poly-TPD (HTL) and PCBM (ETL)","authors":"Tulika Bajpai;Sunny;Shweta Tripathi","doi":"10.1109/TED.2025.3545607","DOIUrl":"https://doi.org/10.1109/TED.2025.3545607","url":null,"abstract":"This article reports an Al/[6,6]-phenyl-C 61-butyric acid methyl ester (PCBM)/WSe2: CuO/Poly-TPD/ITO-coated polyethylene terephthalate (PET) structure-based broadband photodetector. The fabricated device incorporates Poly-TPD and PCBM as a hole transport layer (HTL) and electron transport layer (ETL), while the WSe2 and CuO blend is sandwiched in between HTL and ETL to work as an active layer. All the solutions were prepared by the dispersion methodology and were deposited through a spin coater. Finally, electrodes (Al contacts) were deposited on PCBM (ETL) with the thermal evaporation technique. The suggested photodetector exhibits maximum responsivity <inline-formula> <tex-math>${R}_{S}$ </tex-math></inline-formula>(A/W) of 14.32, 11.43, and 2.1 A/W at 300 nm (UV), 450 nm (visible), and 1200 nm [near infrared range (NIR)] at -0.75-V bias. The incorporation of ETL and HTL shows the promising photograph response of the device and paves the way for the optoelectronic application of the proposed photodetector.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1948-1953"},"PeriodicalIF":2.9,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance Improvement in Ga2O3 Schottky Photodiode With Pyroelectric Effect","authors":"Cizhe Fang;Tongzhou Li;Yao Shao;Yibo Wang;Haodong Hu;Xiaoxi Li;Xiangyu Zeng;Yan Liu;Yue Hao;Genquan Han","doi":"10.1109/TED.2025.3545002","DOIUrl":"https://doi.org/10.1109/TED.2025.3545002","url":null,"abstract":"As a potential architecture for solar-blindness ultraviolet (SBUV) detection, a relatively small responsivity of the Ga2O3 Schottky photodiode hinders their practical usage. Subjected to the severe persistent photoconductivity (PPC) effect, most existing methods can improve the responsivity of Ga2O3 photodetectors, but at the cost of the response speed. Here, an interface pyroelectric effect, induced in the depletion region on ultraviolet illumination, has been utilized for performance improvement of Ga2O3 Schottky photodiode. The influence of optical power density (PD), incident wavelength, externally applied bias, and temperature on the basic pyroelectric properties and corresponding working mechanisms are systematically investigated. Under 254-nm illumination with <inline-formula> <tex-math>$499~mu $ </tex-math></inline-formula>W/cm2, the self-powered device exhibits an improved performance, with a decent responsivity R of 0.056 A/W, a large photodark current ratio PDCR of <inline-formula> <tex-math>$3.26times 10^{{6}}$ </tex-math></inline-formula>, a high specific detectivity <inline-formula> <tex-math>${D} ^{ast } $ </tex-math></inline-formula> of <inline-formula> <tex-math>$3.38times 10^{{13}}$ </tex-math></inline-formula> Jones, and a rise/decay time of 1.94/2.61 ms. This work provides an effective approach to settle the long-standing tradeoff between responsivity and response speed, promoting the practical application of the Ga2O3 photodetector.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1851-1856"},"PeriodicalIF":2.9,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flicker Noise Behavior in Advanced Bulk FinFETs at Cryogenic Temperatures","authors":"Shruti Pathak;Deepesh Sharma;P. Srinivasan;Oscar H. Gonzalez;Abhisek Dixit","doi":"10.1109/TED.2025.3544996","DOIUrl":"https://doi.org/10.1109/TED.2025.3544996","url":null,"abstract":"This work investigates the flicker (<inline-formula> <tex-math>${1}/{f}$ </tex-math></inline-formula>) noise in bulk 12-nm regular threshold voltage (RVT) and super-low threshold voltage (SLVT) n- and p-FinFETs from 300 K down to the cryogenic temperatures range (up to 10 K). The dominant source of noise is carrier number fluctuation for the entire temperature range for both n- and p-FinFETs. The normalized noise is demonstrated to be independent of temperature at several gate overdrive voltages. A detailed comparison of RVT and SLVT devices is presented based on their flicker noise performance, which shows a weak-to-no significant increase in normalized noise in RVT and SLVT FinFETs at 10 and 300 K. The frequency exponent (<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>) has been examined, showing a uniform trap distribution and weak temperature dependence. The trapping time constant (<inline-formula> <tex-math>$tau _{text {T}}$ </tex-math></inline-formula>) is analyzed and found to be temperature-independent, possibly due to the temperature-dependent behavior of the tunneling time constant (<inline-formula> <tex-math>$tau _{text {o}}$ </tex-math></inline-formula>), leading to the minimal temperature dependence of <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>. Moreover, active volume trap density (<inline-formula> <tex-math>${N}_{text {T}}$ </tex-math></inline-formula>) causing flicker noise is studied with temperature using the carrier number fluctuation model, which is illustrated to be nearly constant by combining the impact of tunneling parameter (<inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>) and thermal energy with temperature.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1926-1932"},"PeriodicalIF":2.9,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}