IEEE Transactions on Electron Devices最新文献_第3页

Development of New Sustainable Near-UV Photodetector Devices Based on Polymer/ZnO NR Heterojunctions With Improved Responsivity

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-01 DOI: 10.1109/TED.2024.3520547

Marwa Belhaj;Elyes Bel Hadj Jrad;Jan Grym;Roman Yatskiv;Chérif Dridi

{"title":"Development of New Sustainable Near-UV Photodetector Devices Based on Polymer/ZnO NR Heterojunctions With Improved Responsivity","authors":"Marwa Belhaj;Elyes Bel Hadj Jrad;Jan Grym;Roman Yatskiv;Chérif Dridi","doi":"10.1109/TED.2024.3520547","DOIUrl":"https://doi.org/10.1109/TED.2024.3520547","url":null,"abstract":"This article presents a convenient method for fabricating hybrid heterojunctions using poly (N-vinylcarbazole) (PVK) and a 1-D zinc oxide nanorod (ZnO NR) array for photodetector (PD) development. In this context, PVK and ZnO NRs were employed as electron donor and acceptor, respectively. First, ZnO NRs were hydrothermally synthesized through a two-step procedure at low temperatures on an n-type silicon substrate. Ohmic contacts were integrated by incorporating graphite and eutectic In-Ga (eGaIn) in to the PVK film and Si substrate, respectively. The eGaIn/Si/ZnO NRs/PVK/graphite PD structures’ fundamental electrical parameters were extracted from the I–V response in dark and under illumination conditions. It was found that the device displayed remarkable sensitivity to ultraviolet (UV) light exposure, owing to a responsivity of 35 mA<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>W<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>, with notable reproducibility. What is more, the structure demonstrates an open-circuit voltage, short-circuit current density, and ideality factor of 0.28 V, <inline-formula> <tex-math>$237.2~mu $ </tex-math></inline-formula>A<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>, and 2.3, respectively. The origin of the ZnO/PVK photoconductive properties is explained using the carrier transport mechanism at the interfaces. Moreover, the photoelectrical parameters of the PVK/ZnO NR structure were precisely evaluated through a combined physical-mathematical–numerical approach to unravel the physical mechanisms governing the operation of such PDs. The results of this research reveal promising avenues for flexible and highly sensitive PDs, opening wide potential applications in advanced communication systems, and/or environmental monitoring.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"755-760"},"PeriodicalIF":2.9,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical Model for Gate-Induced Drain Leakage Current Degradation in Polycrystalline Silicon Thin-Film Transistors Under DC Drain Voltage Stress

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-01 DOI: 10.1109/TED.2024.3521926

Yiming Song;Meng Zhang;Zhendong Jiang;Man Wong;Hoi-Sing Kwok

引用次数: 0

Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-31 DOI: 10.1109/TED.2024.3516731

Wei-Hsing Huang;Woocheol Lee;Joong Sik Kim;Won-Tae Koo;Dong Ik Suh;Seho Lee;Jaeyun Yi;Seon Yong Cha;Shimeng Yu

引用次数: 0

A W-Band Backward Wave Oscillator Based on Carbon Nanotube Cold Cathode

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-31 DOI: 10.1109/TED.2024.3520090

Junbo Ren;Yu Zhang;Yanlin Ke;Jun Jiang;Juncong She;Shaozhi Deng

{"title":"A W-Band Backward Wave Oscillator Based on Carbon Nanotube Cold Cathode","authors":"Junbo Ren;Yu Zhang;Yanlin Ke;Jun Jiang;Juncong She;Shaozhi Deng","doi":"10.1109/TED.2024.3520090","DOIUrl":"https://doi.org/10.1109/TED.2024.3520090","url":null,"abstract":"High-frequency, fast response, and room-temperature operation are vital trends and challenges for vacuum electronic devices (VEDs), especially in the millimeter-wave and terahertz range. This study proposes an electrically stimulated cold-cathode high-frequency oscillator capable of generating millimeter-wave single-frequency electromagnetic waves. A W-band backward wave oscillator (BWO) was developed by utilizing a carbon nanotube (CNT) cold cathode in conjunction with a double-staggered grating (DSG) slow wave structure (SWS) in high-order overmoded, which offers notable advantages, such as rapid response time, operating at room temperature, and compact dimension. The emitted sheet electron beam from the CNT cold cathode serves as the electron source, interacting within the SWS to stimulate TM21-like mode oscillations, thereby generating high-frequency electromagnetic waves. Experimental results validated the feasibility of the operating principle, resulting in the generation of output electromagnetic wave signals at 96.316 and 100.045 GHz. This design and principle can find applications in high-frequency cold-cathode vacuum electron devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"859-865"},"PeriodicalIF":2.9,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable Flexible Bandpass Filters Based on Spoof Surface Plasmon Polaritons

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-31 DOI: 10.1109/TED.2024.3521981

Zhiliang Wang;Peng Guo;Chen Shen;Xiang Li;Xiang Zeng;Honghai Deng;Qin Lin;Mingzhu Du

{"title":"Tunable Flexible Bandpass Filters Based on Spoof Surface Plasmon Polaritons","authors":"Zhiliang Wang;Peng Guo;Chen Shen;Xiang Li;Xiang Zeng;Honghai Deng;Qin Lin;Mingzhu Du","doi":"10.1109/TED.2024.3521981","DOIUrl":"https://doi.org/10.1109/TED.2024.3521981","url":null,"abstract":"In this work, dual-mode and multimode tunable flexible bandpass filters (BPFs) based on spoof surface plasmon polaritons (SSPPs) are presented. In the designed circuit, the tunable characteristic of the filters is controlled by the RF switches—organic electrochemical transistors (OECTs). The operating state of the OECTs can be changed by applying a voltage to tune the center frequency of the filter. It is worth mentioning that OECTs are devices that facilitate the design of flexible circuits. Flexible zinc-ion batteries (FZIBs) are integrated into the filters to provide stable switching voltages for OECTs. Due to the integration of flexible batteries during the structural design process, tunable flexible filters operate without the need for an external power supply or microwave electronics. The results indicate that the center frequency of the dual-mode filter is tuned from 3.6 to 4.1 GHz when the OECTs change from on to off. The multimode filter with six tunable states can be digitally encoded. The maximum tuning range of the center frequency of the multimode filter can be adjusted from 2.91 to 3.59 GHz. Furthermore, the transmission characteristics of the filters were measured under different states, including flat, bent, and folded. The simulation and measurement results are in good agreement, showing that the designed tunable flexible filters exhibit excellent transmission performance, which can be widely used in fifth-generation (5G), wireless local area network (WLAN), industrial, scientific, and medical (ISM), and wearable systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"852-858"},"PeriodicalIF":2.9,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analog Implementation of Sigmoidal Neuron by 2-D Semiconductive Resistor

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-31 DOI: 10.1109/TED.2024.3513935

Chao Tan;Zhicheng Lin;Haijuan Wu;Zegao Wang

{"title":"Analog Implementation of Sigmoidal Neuron by 2-D Semiconductive Resistor","authors":"Chao Tan;Zhicheng Lin;Haijuan Wu;Zegao Wang","doi":"10.1109/TED.2024.3513935","DOIUrl":"https://doi.org/10.1109/TED.2024.3513935","url":null,"abstract":"Neuromorphic accelerators based on non-von Neumann architecture are indispensable in the future, but currently, the hardware implementation of nonlinear activation function is still too complicated. This work provided a useful activation function generator with a two-terminal MoS2/CuInP2S6 (MoS2/CIPS) resistor, which is able to output an approximate sigmoid I–V curve. This functionality was verified by the comparison between the neural network (NN) models based on the I–V function and other conventional activation functions, such as rectified linear unit (ReLU) and hyperbolic tangent (tanh), with different training datasets of Modified National Institute of Standards and Technology (MNIST), Kuzushiji-MNIST (KMNIST), and Fashion-MNIST (FMNIST). Then, the trained convolutional neural network (CNN) model was used for feature extraction of human face, demonstrating its recognition capability for various image types. Moreover, a third electrode was added as a bottom gate to explore the tunability of the MoS2/CIPS resistor based on the ferroelectric property of CIPS, which is effective in a limited gate voltage range of −1 to −0.5 V. Significantly, it empowers the device to demonstrate the synaptic plasticity of long-term potentiation (LTP). This work provided a useful sigmoid function generator for neuromorphic computing with very simple structure.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"919-923"},"PeriodicalIF":2.9,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143373137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-31 DOI: 10.1109/TED.2024.3520948

Mamidala Saketh Ram;Mamidala Karthik Ram;Lars-Erik Wernersson

{"title":"Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K","authors":"Mamidala Saketh Ram;Mamidala Karthik Ram;Lars-Erik Wernersson","doi":"10.1109/TED.2024.3520948","DOIUrl":"https://doi.org/10.1109/TED.2024.3520948","url":null,"abstract":"The nonvolatile cryogenic memories can play an important role in realizing energy-efficient and scalable low-temperature electronics for quantum computing and future high-performance computing systems. In this article, we evaluate the cryogenic performance of HfOx-based resistive random access memory (RRAM) and demonstrate that the addition of extremely thin ~0.5-nm AlOx barrier layers enables a high endurance of <inline-formula> <tex-math>$gt 10^{{7}}$ </tex-math></inline-formula> cycles, which represents a <inline-formula> <tex-math>$20times $ </tex-math></inline-formula> improvement compared to operation at room temperature (RT). We also show that by leveraging the analog behavior of the RESET at cryogenic temperatures in contrast to the abrupt RESET at RT, multiple resistance levels beneficial for multibit memory and weight tuning in deep neural networks (DNNs) can be realized. The multibit capability coupled with high endurance and low operational voltages at 14 K presents promising opportunities for incorporating RRAMs into memory and machine learning applications within cryogenic computing environments.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"678-682"},"PeriodicalIF":2.9,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of a Platinum Nanoparticles/Indium Gallium Oxide Based Ammonia Gas Sensor and a Gas Sensing Model for Internet of Things (IoT) Application

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-31 DOI: 10.1109/TED.2024.3513938

Shih Wei Tan;Chia Wei Chang;Zheng Han Jiang;Kun Wei Lin

{"title":"Study of a Platinum Nanoparticles/Indium Gallium Oxide Based Ammonia Gas Sensor and a Gas Sensing Model for Internet of Things (IoT) Application","authors":"Shih Wei Tan;Chia Wei Chang;Zheng Han Jiang;Kun Wei Lin","doi":"10.1109/TED.2024.3513938","DOIUrl":"https://doi.org/10.1109/TED.2024.3513938","url":null,"abstract":"An ammonia (NH3) gas sensor has been developed using a combination of indium gallium oxide (IGO) thin film and platinum (Pt) nanoparticles (NPs). The IGO film was created through radio frequency (RF) magnetron sputtering, while the Pt NPs were applied via vacuum thermal evaporation (VTE). The addition of Pt NPs significantly enhances the responsiveness of the sensor to NH3. A comprehensive analysis of the sensor of the structure, elemental composition, and material properties was conducted. Tests show that when the Pt NP/IGO sensor is exposed to 1000-ppm NH3/air at 300 °C, its sensing response (<inline-formula> <tex-math>${S} _{R}$ </tex-math></inline-formula>) reaches 209.4, and even at 1-ppm NH3, its sensing response is 1.29. Furthermore, the sensor exhibits excellent selectivity and maintains stable performance over a 90-day period. The study proposes a composite first-order differential gas sensing model to reduce redundant data and improve data transmission efficiency in transient sensing applications for the Internet of Things (IoT). The algorithm developed in this study uses environmental thresholds for data preprocessing and is compared with the GM(1, 1) sensing simulation. Experimentally, the algorithm effectively enhances transmission efficiency without increasing computational complexity. Compared to the original transmission data, the proposed method demonstrates a significant reduction in data percentage by 87.8%. As mentioned above, the studied ammonia sensor has potential applications in the IoT and biomedical fields.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"813-821"},"PeriodicalIF":2.9,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cognitive Tactile Perceptual System by Integrating Oxide Neuromorphic Transistor With Triboelectric Nanogenerator

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-30 DOI: 10.1109/TED.2024.3520539

Siyuan Zhou;Xin Huang;Weisheng Wang;Beichen Gong;Jiakang Di;Youjie Huang;Li Qiang Zhu

{"title":"Cognitive Tactile Perceptual System by Integrating Oxide Neuromorphic Transistor With Triboelectric Nanogenerator","authors":"Siyuan Zhou;Xin Huang;Weisheng Wang;Beichen Gong;Jiakang Di;Youjie Huang;Li Qiang Zhu","doi":"10.1109/TED.2024.3520539","DOIUrl":"https://doi.org/10.1109/TED.2024.3520539","url":null,"abstract":"The tactile perceptual system plays a significant role in human physiological activities. Mimicking the perceptual activities on hardware devices will greatly advance the developments of human-computer interfacing. Here, an artificial tactile perceptual system is proposed by integrating solution processed chitosan gated indium-tin-oxide (ITO) neuromorphic transistor and triboelectric nanogenerator (TENG). The transistor exhibits good electrical performance. The TENGs were fabricated on flexible substrates using polydimethylsiloxane polytetrafluoroethylene (PDMS-PTFE) film with high electronegativity as a friction layer. The system demonstrates typical synaptic responses upon pressures. It also demonstrates a quick response time of ~100 ms and good sensitivity (SE) of ~14 nA/N. Since pressures loaded on TENG can carry information, the system demonstrates signal encryption and decoding functions. In addition, it can monitor finger bending activities in real time. The system demonstrates potential in wearable electronics, neural prosthetics, and intelligent human-machine interfacing.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"845-851"},"PeriodicalIF":2.9,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of the Formation of the Off-State Leakage Current in p-GaN HEMT

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2024-12-30 DOI: 10.1109/TED.2024.3520075

Ya-Huan Lee;Po-Hsun Chen;Yu-Hsuan Yeh;Jui-Tse Hsu;Wei-Chieh Hung;Jia-Hong Lin;Hung-Ming Kuo;Han-Yu Chang;Cheng-Hsien Lin;Yu-Jie Tsai;Ting-Chang Chang

{"title":"Analysis of the Formation of the Off-State Leakage Current in p-GaN HEMT","authors":"Ya-Huan Lee;Po-Hsun Chen;Yu-Hsuan Yeh;Jui-Tse Hsu;Wei-Chieh Hung;Jia-Hong Lin;Hung-Ming Kuo;Han-Yu Chang;Cheng-Hsien Lin;Yu-Jie Tsai;Ting-Chang Chang","doi":"10.1109/TED.2024.3520075","DOIUrl":"https://doi.org/10.1109/TED.2024.3520075","url":null,"abstract":"In this study, the off-state leakage current (<inline-formula> <tex-math>${I} _{text {off}}$ </tex-math></inline-formula>) of p-GaN high electron mobility transistor (HEMT) is analyzed. At low drain bias approximately below 100 V, the leakage is dominated by the punchthrough leakage current from the source electrode, resulting in an increase in <inline-formula> <tex-math>${I} _{text {off}}$ </tex-math></inline-formula> as the bias increases. However, at an intermediate drain bias to 400 V, the punchthrough leakage current will decrease because of the gate electron injection. The electrons will be injected into the GaN buffer layer, indirectly leading to a decrease in <inline-formula> <tex-math>${I} _{text {off}}$ </tex-math></inline-formula>. Lastly, at a higher drain bias of 700 V, the dominant leakage path is converted into the body current, which is dominated by the trap-assisted thermionic field emission (TA-TFE) mechanism. The generated holes will recombine with the injected electrons or inject into the buffer layer, leading to a significant increase in <inline-formula> <tex-math>${I} _{text {off}}$ </tex-math></inline-formula>. The reliability testing is also employed to validate the underlying mechanisms.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"625-628"},"PeriodicalIF":2.9,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0