IEEE Transactions on Electron Devices最新文献_第3页

Accurate Analytical Modeling of 3-D Capacitor Based on Coaxial TSV Array and RDL 基于同轴TSV阵列和RDL的三维电容器精确解析建模

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-24 DOI: 10.1109/TED.2025.3560589

Xinqing Lei;Xiangkun Yin;Ziyu Zhou;Gang Dong;Zhangming Zhu

引用次数: 0

Robust Performance Under Ball Drop on Coplanar Oxide TFT by Organic Passivation Layer on Top 顶部有机钝化层的共面氧化TFT在球落下的稳健性能

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-24 DOI: 10.1109/TED.2025.3558770

Junmi Lee;Heonbang Lee;Myeonggi Jeong;Jinbaek Bae;Chanju Park;Keunwoo Kim;Jin Jang

引用次数: 0

Achieving Morphotropic Phase Boundary at Extremely Low-Temperature (200 °C) in HZO (>10 nm) Films Using Microwave Annealing 利用微波退火技术在极低温（200°C）下实现HZO （> - 10nm）薄膜的致形相边界

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3560925

Taeseung Jung;Hunbeom Shin;Jinho Ahn;Sanghun Jeon

{"title":"Achieving Morphotropic Phase Boundary at Extremely Low-Temperature (200 °C) in HZO (>10 nm) Films Using Microwave Annealing","authors":"Taeseung Jung;Hunbeom Shin;Jinho Ahn;Sanghun Jeon","doi":"10.1109/TED.2025.3560925","DOIUrl":"https://doi.org/10.1109/TED.2025.3560925","url":null,"abstract":"Thick Hafnium-Zirconium oxide (HZO) films (>10 nm) near morphotropic phase boundary (MPB) are promising for high-k dielectrics in display driving devices and susceptible piezoelectric and temperature sensors. As the demand for flexible systems increases with technological advancements, the overall process temperature must be kept below <inline-formula> <tex-math>$400~^{circ }$ </tex-math></inline-formula>C to be suitable for flexible substrates. However, achieving the MPB in hafnia-based materials generally required higher crystallization temperatures than the deposition temperature (above <inline-formula> <tex-math>$300~^{circ }$ </tex-math></inline-formula>C). In this work, we achieved a high dielectric constant of 39.5 near the MPB in a 15 nm-thick HZO (1:5) film with microwave annealing (MWA) at a temperature of <inline-formula> <tex-math>$200~^{circ }$ </tex-math></inline-formula>C. MWA-treated HZO films present a higher dielectric constant and a lower leakage current density at a low electric field than the furnace-treated, despite the much shorter annealing time (1 min) than the furnace (60 min). Grazing incidence X-ray diffraction (GIXRD) analysis revealed that the m-phase (<inline-formula> <tex-math>$20lt kappa lt 25$ </tex-math></inline-formula>) proportion is lower in MWA (5.2%) than in the furnace (9.8%). Also, transport mechanism analysis demonstrated that MWA (0.82 eV) shows a higher Schottky barrier height than the furnace (0.75 eV), resulting in lower current density at low electric fields. This study presents a promising approach for employing high-<inline-formula> <tex-math>$kappa $ </tex-math></inline-formula> HZO films near MPB in next-generation flexible electronic systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3076-3080"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144185814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Normally-Off HEMT-Based Bipolar p-FET With Enhanced Conduction Capability 具有增强导通能力的常关hemt型双极p-FET

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3559906

Chengcai Wang;Jinjin Tang;Junting Chen;Jun Ma;Mengyuan Hua

{"title":"Normally-Off HEMT-Based Bipolar p-FET With Enhanced Conduction Capability","authors":"Chengcai Wang;Jinjin Tang;Junting Chen;Jun Ma;Mengyuan Hua","doi":"10.1109/TED.2025.3559906","DOIUrl":"https://doi.org/10.1109/TED.2025.3559906","url":null,"abstract":"A normally-OFF HEMT-based bipolar p-channel field-effect transistor (NH-BiPFET) structure is proposed to enlarge the conduction current density of GaN-based p-channel transistors. In the NH-BiPFET, a normally-OFF p-GaN gate high-electron-mobility transistor (HEMT) is cascaded with a conventional p-channel field-effect transistor (p-FET), leveraging electrons as majority carriers to enhance conduction current substantially. As a result, the drain current density in NH-BiPFET increases to 43.91 mA/mm, approximately 34 times higher than that of a conventional p-FET. Moreover, the NH-BiPFET maintains a high <inline-formula> <tex-math>${I}_{text {ON}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${I}_{text {OFF}}$ </tex-math></inline-formula> ratio and a low gate leakage current comparable to the conventional p-FETs. However, the analysis of switching performance reveals that the slow discharging rate of the floating node between the p-GaN gate and the p-FET drain can lead to a prolonged turn-off transient. To address this issue, an enhanced configuration (ENH-BiPFET) consisting of the NH-BiPFET and an additional HEMT device is further proposed. Even with one more HEMT device, the complementary logic (CL) inverter based on ENH-BiPFET can still save 43.8% area compared to the conventional CL inverters, while maintaining the same operation speed.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"2884-2890"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144196932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cavity Design for a High-Power, Frequency-Agile 198 GHz Gyrotron 大功率、频率捷变198ghz回旋管腔体设计

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3554497

Marthe Millen;Ioannis Gr. Pagonakis;Jérémy Genoud;Lea Marti;Nicholas Alaniva;Snædís Björgvinsdóttir;Steven Craig;Mark Henderson;Jean-Philippe Hogge;Alexander B. Barnes

{"title":"Cavity Design for a High-Power, Frequency-Agile 198 GHz Gyrotron","authors":"Marthe Millen;Ioannis Gr. Pagonakis;Jérémy Genoud;Lea Marti;Nicholas Alaniva;Snædís Björgvinsdóttir;Steven Craig;Mark Henderson;Jean-Philippe Hogge;Alexander B. Barnes","doi":"10.1109/TED.2025.3554497","DOIUrl":"https://doi.org/10.1109/TED.2025.3554497","url":null,"abstract":"Gyrotrons are high-power microwave sources, readily applied in diverse fields ranging from fusion research and thermal treatment of materials to advanced spectroscopic techniques. Here, we provide the cavity design of a 198 GHz gyrotron to generate microwaves with kW level power and a frequency bandwidth of several hundreds of MHz. The design focuses on the interaction cavity, while all other components of the vacuum tube remain unchanged from a currently operational 198 GHz, 60 W frequency-agile gyrotron. The proposed cavity geometry allows for two operating points, one optimized for frequency agility, and the other for high power. Cavity interaction code simulations show that frequency tunability over a range of 400 MHz can be reached using a smooth transition between the first and second axial mode excitations. In addition, these simulations indicate that up to 7 kW microwave power can be obtained at the high-power operating point. Furthermore, the ohmic load deposited on the walls of the interaction cavity was investigated for high-power operation. The expected microwave power and frequency agility of the cavity are promising for applications such as dynamic nuclear polarization (DNP) spectroscopy and electron paramagnetic resonance (EPR) experiments.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2597-2603"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973776","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of Anode Configuration on Performance of Field Emitter Arrays 阳极结构对场射极阵列性能的影响

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3558722

Youngjin Shin;Nedeljko Karaulac;Winston Chern;Akintunde I. Akinwande

{"title":"Impact of Anode Configuration on Performance of Field Emitter Arrays","authors":"Youngjin Shin;Nedeljko Karaulac;Winston Chern;Akintunde I. Akinwande","doi":"10.1109/TED.2025.3558722","DOIUrl":"https://doi.org/10.1109/TED.2025.3558722","url":null,"abstract":"We demonstrate the first steps in engineering the anode of field emitter arrays (FEAs) for optimal vacuum packaging by studying a parallel anode-cathode configuration. As part of our study, we report an unexpected gate-controlled negative differential resistance (NDR) region in the output characteristics of FEA-based triodes. The FEA triode consists of an FEA cathode and a silicon MEMS anode that are separated by insulated standoffs to form a vacuum channel. The FEA cathode is an array of high-aspect nanowires connected in series with gated emitter tips. Electrons extracted by the gate-emitter voltage undergo ballistic transport to the anode. It is generally assumed that a parallel anode-cathode triode structure would be ideal due to its geometrical compactness and symmetry. In this work, an on-chip integrated flat silicon anode was fabricated to characterize the parallel configuration for well-defined anode-to-emitter distances of <inline-formula> <tex-math>$leq 100~mu $ </tex-math></inline-formula>m. The observation of NDR in the “triode” operation regime, which is space-charge limited, suggests that the parallel anode-cathode structure will not be ideal for the integration of triodes for some circuit applications because of unfavorable electrostatics in the vacuum channel between the cathode and the anode. In addition, we demonstrated that the performance of the triodes could be engineered to reduce the <sc>on</small>-resistance (<inline-formula> <tex-math>${R}_{text {ON}}$ </tex-math></inline-formula>) and increase the output current by varying the geometry and position of the anode.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3161-3168"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144190608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Fast and Accurate Coarse Method for Multipactor Threshold Prediction of RF Filters Under Modulated Signal Excitation 调制信号激励下射频滤波器多因子阈值快速准确粗预测方法

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3559910

Carlos Alcaide Guillén;Miguel Rodríguez Jódar;Raúl Cervera Marín;Jose V. Morro;Pablo Soto;Òscar Monerris;Javier Ossorio;Rafael Mata;Davide Smacchia;Vicente E. Boria;César Miquel España

{"title":"A Fast and Accurate Coarse Method for Multipactor Threshold Prediction of RF Filters Under Modulated Signal Excitation","authors":"Carlos Alcaide Guillén;Miguel Rodríguez Jódar;Raúl Cervera Marín;Jose V. Morro;Pablo Soto;Òscar Monerris;Javier Ossorio;Rafael Mata;Davide Smacchia;Vicente E. Boria;César Miquel España","doi":"10.1109/TED.2025.3559910","DOIUrl":"https://doi.org/10.1109/TED.2025.3559910","url":null,"abstract":"Multipactor is a key high-power effect limiting the system performance for onboard satellite hardware. Although modern particle simulators admit arbitrary geometries and signals as inputs, their practical use is often limited to continuous-wave (CW) excitations. Unfortunately, the multipactor analysis for input-modulated signals normally leads to prohibitively large CPU times, as signal lengths are very large compared to the electron population’s evolution time. The Coarse Method is an elegant way of overcoming this limitation, providing a good estimate of the multipactor threshold in reduced CPU times. However, if the input signal is not preprocessed before being analyzed, the method is unable to account for the frequency dependence as it operates with electron dynamics information extracted at a single frequency, leading to biased predictions for narrowband samples as filters. This article proposes an extension to the original Coarse Method implementation by considering the sample response and the modulated signal spectral distribution to account for the frequency dependence. The resulting method is suitable for estimating the multipactor threshold of narrowband samples excited by modulated signals, while keeping the benefits in terms of simplicity, efficiency, and generality of the Coarse Method. The proposed approach is benchmarked against laboratory measurement results, as well as particle simulators and legacy Coarse Method predictions, revealing the advantages of the novel technique and its range of applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3177-3184"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10972331","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144190542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigations Into Failure Mechanism of Cascode GaN HEMTs Under Single Pulse Surge Current Stress 级联GaN hemt在单脉冲浪涌电流应力下失效机理的研究

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3560275

Weihao Lu;Sheng Li;Weixiong Mao;Yanfeng Ma;Mingfei Li;Jie Ma;Ran Ye;Jiaxing Wei;Long Zhang;Chi Zhang;Siyang Liu;Weifeng Sun

引用次数: 0

Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether 基于机器学习的一维声子晶体系链MEMS谐振器锚损降低研究

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3559898

Wen Chen;Yuhao Xiao;Kewen Zhu;Longlong Li;Guoqiang Wu

{"title":"Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether","authors":"Wen Chen;Yuhao Xiao;Kewen Zhu;Longlong Li;Guoqiang Wu","doi":"10.1109/TED.2025.3559898","DOIUrl":"https://doi.org/10.1109/TED.2025.3559898","url":null,"abstract":"In this article, a machine learning (ML)-based anchor loss reduction approach for microelectromechanical systems (MEMSs) resonators with 1-D gourd-shaped phononic crystal (PnC) tether is reported here. A forward artificial neural network (ANN) is used to accurately predict the dispersion characteristics of the PnC tether. Then, a tandem network comprising inverse ANN and forward ANN is used to predict the corresponding geometries of PnC tether according to the expected bandgap target. The final optimal geometries of PnC tether corresponding to the desired bandgap, for width-extensional (WE) mode piezoelectric MEMS resonators, are determined with the aid of the tandem network. To verify the reliability of the proposed tandem network, the dispersion characteristics of the predicted geometries obtained from ML are also simulated by finite element method (FEM) analysis. The forward ANN serves as a high-speed and high-accuracy tool for calculating the dispersion characteristics of the PnC, performing calculations <inline-formula> <tex-math>${3} times {10}^{{4}}$ </tex-math></inline-formula> times faster than FEM analysis, with an accuracy of 99.9%. ML provides an intelligible and effective approach to screen thousands of design candidates with the forward ANN, as well as optimizing the PnC design with the tandem network.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3127-3132"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144190539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inverse Design of Electron Gun With Transfer Learning Based on Neural Network 基于神经网络迁移学习的电子枪反设计

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3559877

Wei Hong;Hongli Gao;Changsheng Shen;Yongzhi Zhuang;Zhaofu Chen;Changqing Zhang;Pan Pan;Jinjun Feng;Ningfeng Bai

引用次数: 0