IEEE Transactions on Electron Devices最新文献_第4页

A Physics-Based Analytical Model for Single-Event Multiple Transients Considering Well Potential Fluctuation 考虑井势波动的单事件多瞬态物理分析模型

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3558490

Yutao Zhang;Hongliang Lyu;Yuming Zhang;Ruxue Yao

{"title":"A Physics-Based Analytical Model for Single-Event Multiple Transients Considering Well Potential Fluctuation","authors":"Yutao Zhang;Hongliang Lyu;Yuming Zhang;Ruxue Yao","doi":"10.1109/TED.2025.3558490","DOIUrl":"https://doi.org/10.1109/TED.2025.3558490","url":null,"abstract":"Due to factors such as the decreasing size of semiconductor processes and the threshold voltage of transistors, single-event transients (SETs) have the potential to develop into single-event multiple-transient (SEMT) effects. This study introduces an SEMT current model that accounts for the variability in the well potential to precisely characterize the multiple transient currents induced by a single particle. Through an examination of the alterations in physical parameters during SEMT occurrences, it is observed that fluctuations in the well potential can impact the collection of deposited charges and trigger the parasitic bipolar amplification effect. A physics-based SEMT current model is consequently formulated based on the underlying physical mechanisms. Verification of the proposed model is conducted through TCAD simulations, with 3-D simulation outcomes illustrating the efficacy of the analysis of physical mechanisms and model derivation under different linear energy transfers (LETs) and angles. Additionally, a 3-D three-stage inverter chain is assembled to confirm the model’s effectiveness in circuit-level simulation. The results indicate that the proposed model can accurately predict the critical LET. Notably, the simulation outcomes in SPICE, utilizing the proposed physical model, exhibit strong agreement with TCAD simulation results across various incident locations. And SPICE simulation could predict single-event double transients (SEDTs) under certain conditions, which is consistent with TCAD simulation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"2807-2813"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144196704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quasi-Periodic Sequences Generation of Ultrashort Pulses Based on the Superradiance of a Coaxial Cherenkov Generator Operating at Low Magnetic Field 基于低磁场工作的同轴切伦科夫发生器超辐射产生超短脉冲的准周期序列

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3559491

Renzhen Xiao;Renjie Cheng;Shaohui Han;Junqing Wang;Kaijuan Zhou;Dongyang Wang;Kun Chen

{"title":"Quasi-Periodic Sequences Generation of Ultrashort Pulses Based on the Superradiance of a Coaxial Cherenkov Generator Operating at Low Magnetic Field","authors":"Renzhen Xiao;Renjie Cheng;Shaohui Han;Junqing Wang;Kaijuan Zhou;Dongyang Wang;Kun Chen","doi":"10.1109/TED.2025.3559491","DOIUrl":"https://doi.org/10.1109/TED.2025.3559491","url":null,"abstract":"A coaxial Cherenkov generator operating at a low magnetic field is proposed to generate ultrashort-pulse quasi-periodic sequences based on the effect of superradiance (SR). The device employs an extended slow wave structure (SWS) with combined variations in corrugation depth and period, resulting in enhanced spectral continuity and higher SR power. Most of the microwave power is coupled into the hollow waveguide formed by the inner conductor of the coaxial SWS. A portion of the SR pulse generated in the coaxial SWS is reflected back into the SWS, where it is primarily absorbed by disturbed electrons rather than seeding the next SR pulse. Particle-in-cell (PIC) simulations demonstrate that under a diode voltage of 720 kV, beam current of 19.2 kA, and guiding magnetic field of 0.54 T, six short pulses with instantaneous peak power of 15.5–28.5 GW and full width half maximum (FWHM) durations of 0.7–1.4 ns are produced within a 50 ns window. The inter-pulse intervals range from 4.4 to 8.8 ns. The frequency is in the X-band with an 800 MHz bandwidth at the −10 dB level. The variations in peak power and timing are thoroughly analyzed, and the physical mechanisms underlying the quasi-periodic ultrashort-pulse formation are elucidated. A new insight is provided that the critical factor for the sequence formation based on the SR effect lies in the recovery of the electron beam to an undisturbed state after each pulse.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3169-3176"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144190605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

3.0 kV β-Ga2O3-Based Vertical p-n Heterojunction Diodes With Helium- Implanted Edge Termination 3.0 kV氦注入边缘终端β- ga2o3基垂直p-n异质结二极管

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3560277

Jiajun Han;Na Sun;Xinyi Pei;Rui Wang;Kangkai Fan;Renqiang Zhu;Min Wang;Xi Zhu;Xiaohua Li;Jingbo Li;Nengjie Huo;Jiandong Ye;Xinke Liu

{"title":"3.0 kV β-Ga2O3-Based Vertical p-n Heterojunction Diodes With Helium- Implanted Edge Termination","authors":"Jiajun Han;Na Sun;Xinyi Pei;Rui Wang;Kangkai Fan;Renqiang Zhu;Min Wang;Xi Zhu;Xiaohua Li;Jingbo Li;Nengjie Huo;Jiandong Ye;Xinke Liu","doi":"10.1109/TED.2025.3560277","DOIUrl":"https://doi.org/10.1109/TED.2025.3560277","url":null,"abstract":"We demonstrated the vertical NiO/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 p-n heterojunction diodes (HJDs) with a high breakdown voltage (<inline-formula> <tex-math>${V}_{text {BR}}text {)}$ </tex-math></inline-formula> of 3000 V and a low <sc>on</small>-resistance (<inline-formula> <tex-math>${R}_{text {on, {sp}}}text {)}$ </tex-math></inline-formula> of 3.12 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2, resulting in a Baliga’s figure of merit (FOM) of 2.88 GW/cm2. Specifically, an efficient and low-damage edge termination (ET) formed by the implantation of lightweight Helium atoms was introduced to inhibit the high electric field at the p-n junction of HJDs, thereby increasing <inline-formula> <tex-math>${V}_{text {BR}}$ </tex-math></inline-formula> of devices from 1330 to 3000 V. The reverse leakage mechanisms were fit and analyzed, revealing distinct breakdown mechanisms in He-implanted devices. The simulation results confirmed the peak electric field at the p-n junction of devices can be effectively suppressed by He-implanted ET. Meanwhile, a narrow change of devices’ <inline-formula> <tex-math>${R}_{text {on, {sp}}}$ </tex-math></inline-formula> occurred after He implantation and the low-<inline-formula> <tex-math>${R}_{text {on, {sp}}}$ </tex-math></inline-formula> forward conduction of devices was confirmed by efficient charge transfer of heterojunction with density functional theory (DFT) calculation. This work may provide a new insight into the design and fabrication of high-power, low-loss <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 bipolar power devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"2879-2883"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144196941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Trajectory Prediction System Utilizing the Intrinsic Long-Term and Short-Term Plasticity in CT-FeFET 利用ct - ffet内禀长短期塑性的轨迹预测系统

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-21 DOI: 10.1109/TED.2025.3559520

Chao Li;Xumeng Zhang;Zhaohao Zhang;Fangduo Zhu;Gaobo Xu;Jie Yu;Qingzhu Zhang;Qi Liu;Ming Liu

{"title":"Trajectory Prediction System Utilizing the Intrinsic Long-Term and Short-Term Plasticity in CT-FeFET","authors":"Chao Li;Xumeng Zhang;Zhaohao Zhang;Fangduo Zhu;Gaobo Xu;Jie Yu;Qingzhu Zhang;Qi Liu;Ming Liu","doi":"10.1109/TED.2025.3559520","DOIUrl":"https://doi.org/10.1109/TED.2025.3559520","url":null,"abstract":"Trajectory prediction is a vital function in the auto-driving field which relies on both historical information and current inputs to make forecasts. Continuous attractor neural network (CANN) with dynamic synapses is one of the typical algorithms for conducting prediction tasks. However, current devices are limited to separately handling static weight storage and dynamic modulation, leading to considerable resource consumption in the hardware implementation of CANN. Here, we integrate long-term and short-term plasticity using charge-trapping ferroelectric FETs (CT-FeFETs) to realize dynamic synaptic units. The long-term weights are stored in the ferroelectric domain, while the short-term weights are dynamically operated in a CT domain, eliminating the external caching process. Based on the intrinsic long-term and short-term plasticity of CT-FeFETs, historical information interacts with the inputs in situ, facilitating a dynamic in-memory computing (IMC) that enables real-time prediction. Moreover, we introduced CT-FeFET into both feedforward networks and CANN to validate prediction performance, and confirmed that a larger dynamic range and smaller time constant in the short-term dynamics enable the system to match a broader speed range for predictive tracking. This work provides a novel way of performing interacting tasks with dynamic IMC technology.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3280-3286"},"PeriodicalIF":2.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bias-Selectable Dual-Mode SOI/PbSe Heterojunction for Visible-to-Shortwave Infrared Photodetector 可见光-短波红外探测器用偏置可选双模SOI/PbSe异质结

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-21 DOI: 10.1109/TED.2025.3559880

Shuren Zhou;Haodong Fan;Yunchen Zhang;Lingkang Kong;Yi Yin;Changyong Lan;Chun Li;Yong Liu

{"title":"Bias-Selectable Dual-Mode SOI/PbSe Heterojunction for Visible-to-Shortwave Infrared Photodetector","authors":"Shuren Zhou;Haodong Fan;Yunchen Zhang;Lingkang Kong;Yi Yin;Changyong Lan;Chun Li;Yong Liu","doi":"10.1109/TED.2025.3559880","DOIUrl":"https://doi.org/10.1109/TED.2025.3559880","url":null,"abstract":"Silicon-integrated broadband photodetectors covering a wide spectral range are important for next-generation optoelectronic systems. Directly building heterojunctions based on the stacking of bulk silicon and narrow-bandgap semiconductor thin films has emerged as an interesting research focus, considering their simple and effective fabrication methods. However, the long diffusion length of the charge carriers limits the response time, and the intrinsic lack of gain of the photodiode results in low infrared response in devices. In this work, we report a bias-selectable broadband and high photography-responsive Si/PbSe heterojunction photodetector fabricated on silicon-on-insulator (SOI) substrate. Specifically, the device operates in photodiode mode under reverse bias with responsivities of 4 mA/W and <inline-formula> <tex-math>$3~mu $ </tex-math></inline-formula>A/W at 520 and 1550 nm, respectively. Under forward bias, the device is in photoconductor mode with responsivities of 6 A/W and 250 mA/W at 520 and 1550 nm, respectively. Additionally, the response times of the device are 450/390 ns and 7/<inline-formula> <tex-math>$8~mu $ </tex-math></inline-formula>s under reverse and forward bias, respectively. Our results may provide solutions for the future development of miniaturized and multifunctional Si-integrated infrared detectors for broadband imaging and miniaturized spectrometers.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3343-3346"},"PeriodicalIF":2.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design Optimization of Flip FET Standard Cells With Dual-Sided Pins for Ultimate Scaling 具有双面引脚的翻转场效应管标准电池的设计优化，以实现最终的缩放

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-21 DOI: 10.1109/TED.2025.3558759

Rui Guo;Haoran Lu;Jiacheng Sun;Xun Jiang;Lining Zhang;Ming Li;Yibo Lin;Runsheng Wang;Heng Wu;Ru Huang

{"title":"Design Optimization of Flip FET Standard Cells With Dual-Sided Pins for Ultimate Scaling","authors":"Rui Guo;Haoran Lu;Jiacheng Sun;Xun Jiang;Lining Zhang;Ming Li;Yibo Lin;Runsheng Wang;Heng Wu;Ru Huang","doi":"10.1109/TED.2025.3558759","DOIUrl":"https://doi.org/10.1109/TED.2025.3558759","url":null,"abstract":"Recently, we proposed a novel transistor architecture for 3-D stacked FETs called Flip FET (FFET), featuring N/P transistors back-to-back stacked and dualsided interconnects. With dual-sided power rails and signal tracks, FFET can achieve an aggressive 2.5 T cell height. As a tradeoff, the complex structure and limited numbers of M0 tracks could limit the standard cell design. As a solution, multiple innovations were introduced and examined in this work. Based on an advanced node design rule, several unique building blocks in FFET such as drain merge (DM), gate merge (GM), field DM (FDM), and buried signal track (BST) were investigated. Other key design concepts of multi-row, split gate (SG), and dummy gate (DG) insertion were also carefully studied, delivering around 35.6% area reduction compared with 3 T CFET. Furthermore, the symmetric design of FFET has unique superiority over CFET thanks to the separate N/P logic on two sides of the wafer and their connections using DM and GM. New routing scheme with dual-sided output pins on both wafer frontside (FS) and backside (BS) was proposed for the first time. Finally, we conducted a comprehensive evaluation on complex cell design, taking AOI22 as an example. New strategies were proposed and examined. The FDM design is identified as the best, outperforming the BST and DG design by 1.93% and 5.13% for the transition delay.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"2820-2826"},"PeriodicalIF":2.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144196792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication 用于led可见光通信的高速InGaP/AlGaAs雪崩光电二极管

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-21 DOI: 10.1109/TED.2025.3559492

Yifan Fan;Xiangyang Chen;Zhecheng Dai;Jingyi Wang;Daqi Shen;Wenyang Wang;Haiming Ji;Pengfei Tian;Baile Chen

引用次数: 0

Current Collapse in Buffer-Free GaN-on-SiC Power Transistors: Maxwell-Wagner Effect and Related Model 无缓冲器GaN-on-SiC功率晶体管的电流崩溃：麦克斯韦-瓦格纳效应和相关模型

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-21 DOI: 10.1109/TED.2025.3556052

Alberto Cavaliere;Nicola Modolo;Carlo De Santi;Christian Koller;Clemens Ostermaier;Gaudenzio Meneghesso;Enrico Zanoni;Olof Öberg;Qin Wang;Ding Yuan Chen;Anders Lundskog;Jr-Tai Chen;Matteo Meneghini

引用次数: 0

Variational Quantum Algorithm for Solving Quantum Transport Equation in Semiconductor Device 求解半导体器件中量子输运方程的变分量子算法

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-18 DOI: 10.1109/TED.2025.3558757

Qimao Yang;Jing Guo

引用次数: 0

Low-Loss MOS-Controllable Stored-Carrier Diode 低损耗mos可控存储载流子二极管

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-18 DOI: 10.1109/TED.2025.3556110

Hiroshi Suzuki;Tomoyuki Miyoshi;Takashi Hirao;Yusuke Takada;Tomoyasu Furukawa;Mutsuhiro Mori;Tsubasa Moritsuka;Masaki Shiraishi

{"title":"Low-Loss MOS-Controllable Stored-Carrier Diode","authors":"Hiroshi Suzuki;Tomoyuki Miyoshi;Takashi Hirao;Yusuke Takada;Tomoyasu Furukawa;Mutsuhiro Mori;Tsubasa Moritsuka;Masaki Shiraishi","doi":"10.1109/TED.2025.3556110","DOIUrl":"https://doi.org/10.1109/TED.2025.3556110","url":null,"abstract":"We previously proposed a metal-oxide–semiconductor-controllable stored-carrier diode (MOSD) to break through the tradeoff between conduction loss and switching loss with a conventional p-n diode. The structure of this MOSD consists of an n-channel metal-oxide–semiconductor field-effect transistor (MOSFET) added to the anode region, which dynamically controls the stored-carrier density. The simulation results for this study indicated that the switching loss for our MOSD can be sufficiently reduced compared with that for a gate-controlled body diode in a MOSFET due to the deep p− layer completely covering the MOS gate. The narrow cell width and electron barrier layer (EBL), which are characteristics of our MOSD, also enhance the reducing effect of switching loss and forward voltage (<inline-formula> <tex-math>${V}_{text {F}}$ </tex-math></inline-formula>), respectively. To verify this concept, we fabricated a prototype 6.5-kV MOSD. This MOSD, driven by a high-conductivity insulated gate bipolar transistor (IGBT) with time and space control of stored carriers (TASC), demonstrated a lower switching loss of −43% and lower <inline-formula> <tex-math>${V}_{text {F}}$ </tex-math></inline-formula> of −1.0 V compared with those for a conventional p-n diode driven by a planar-gate IGBT.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2499-2505"},"PeriodicalIF":2.9,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0