Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet Photodetectors With High-Temperature Photoresponse Stability

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-07-31 DOI:10.1109/TED.2025.3592914

Zixi Lv;Wenkuo Zhang;Jiagui Li;Wei Zeng;Benli Yu;Feng Xie

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Abstract

A high thermal stability AlGaN-based back-illuminated solar-blind ultraviolet (SBUV) p-i-n photodetectors (PDs) are fabricated on double-sided, polished sapphire substrates. The PD exhibits low dark current of less than 18 pA under –5 V bias at room temperature (RT), which corresponds to a dark current density of

$\lt 1.8\times 10^{-{9}}$

A/cm2. Even at a high temperature of

$150~^{\circ }$

C, the dark current of the PD is still below 50 pA. The PD also shows a high solar-blind/UV rejection ratio up to four orders of magnitude in the temperature range of RT to

$150~^{\circ }$

C. As the temperature continuously rises from RT to

$150~^{\circ }$

C, the photocurrent of the PD only increases by less than 8%, which corresponds to an extremely small temperature coefficient (TC) of <0.06%/°C. The ultralow TC achieved is believed to be related to the high polarization electric field at the composition-graded heterojunction interface.

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具有高温光响应稳定性的背照algan基太阳盲紫外探测器

在双面抛光蓝宝石衬底上制备了一种高热稳定性的藻类背光太阳盲紫外（SBUV） p-i-n光电探测器（pd）。在室温（RT）下，PD在- 5 V偏置下表现出小于18 pA的低暗电流，对应于暗电流密度为1.8 × 10^{-{9}}$ a /cm2。即使在$150~^{\circ}$ C的高温下，PD的暗电流仍低于50 pA。在RT ~ 150~^{\circ}$ C的温度范围内，PD具有高达4个数量级的高日盲/UV抑制比，当温度从RT持续升高到150~^{\circ}$ C时，PD的光电流仅增加不到8%，对应于极小的温度系数(TC) <0.06%/°C。本文认为，获得的超低温度与成分梯度异质结界面处的高极化电场有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.