IEEE Transactions on Electron Devices最新文献_第5页

HfO₂–ZrO₂ Superlattice HZO Ultrathin Poly-Si Channel (3.5 nm) Junctionless FeTFTs Exhibiting Superior Endurance and Robust Retention HfO₂-ZrO₂ 超晶格 HZO 超薄聚硅氧烷通道（3.5 nm）无结 FeTFT 显示出卓越的耐久性和稳定的保持力

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-03 DOI: 10.1109/TED.2025.3544188

Dong-Ru Hsieh;Zi-Yang Hong;Huai-En Luo;Wei-Ju Yeh;Jia-Chian Ni;Ciao-Fen Chen;Yen-Fu Lin;Shun-Tsung Lo;Tien-Sheng Chao

{"title":"HfO₂–ZrO₂ Superlattice HZO Ultrathin Poly-Si Channel (3.5 nm) Junctionless FeTFTs Exhibiting Superior Endurance and Robust Retention","authors":"Dong-Ru Hsieh;Zi-Yang Hong;Huai-En Luo;Wei-Ju Yeh;Jia-Chian Ni;Ciao-Fen Chen;Yen-Fu Lin;Shun-Tsung Lo;Tien-Sheng Chao","doi":"10.1109/TED.2025.3544188","DOIUrl":"https://doi.org/10.1109/TED.2025.3544188","url":null,"abstract":"In this study, HfO2–ZrO2 superlattice (SL) HfZrO2 (HZO) 3.5-nm ultrathin poly-Si channel (UTPC) junctionless (JL) ferroelectric thin-film transistors (FeTFTs) with the two types of HfO2/ZrO2 nanolamination (NL) thicknesses (0.5 and 1.0 nm) and a 1.0-nm ZrO2 seed layer were experimentally investigated and discussed their ferroelectricity and reliability for the first time. Compared with the conventional HZO UTPC JL FeTFTs, the SL HZO UTPC JL FeTFTs with a HfO2 and ZrO2 NL thickness of 1 nm achieved a relatively large pristine/residual pulsed memory window (MW) up to 1.09/1.06 V under a very low pulse height <inline-formula> <tex-math>$times $ </tex-math></inline-formula> pulse width down to <inline-formula> <tex-math>$0.8~mu $ </tex-math></inline-formula> Vs and nearly zero MW degradation rate (<inline-formula> <tex-math>$Delta $ </tex-math></inline-formula> MW/MW<inline-formula> <tex-math>$_{,text {pristine}}$ </tex-math></inline-formula>) down to 2.8% after the endurance test up to <inline-formula> <tex-math>$10^{{7}}$ </tex-math></inline-formula> cycles. Furthermore, the SL HZO UTPC JL FeTFTs with an NL thickness of 1 nm exhibited a robust 10/298/423 K retention characteristic for 25 h with a sufficiently large pulsed MW of 1.30/1.38/0.65 V, and the synaptic behavior with a maximum channel conductance over 1400 nS. According to pulsed characteristic and reliability viewpoints, the HfO2–ZrO2 SL HZO UTPC JL FeTFTs are greatly promising candidates for 3-D nand nonvolatile memories (NVMs) and neuromorphic systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1756-1762"},"PeriodicalIF":2.9,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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The Investigation of the Hysteresis and Reliability Mechanism of Amorphous Oxide Semiconductor Thin-Film Transistors Applied in Dynamic Random Access Memory

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-03 DOI: 10.1109/TED.2025.3545007

Jie Luo;Yunjiao Bao;Yanyu Yang;Yupeng Lu;Guilei Wang;Gaobo Xu;Huaxiang Yin;Chao Zhao;Jun Luo

{"title":"The Investigation of the Hysteresis and Reliability Mechanism of Amorphous Oxide Semiconductor Thin-Film Transistors Applied in Dynamic Random Access Memory","authors":"Jie Luo;Yunjiao Bao;Yanyu Yang;Yupeng Lu;Guilei Wang;Gaobo Xu;Huaxiang Yin;Chao Zhao;Jun Luo","doi":"10.1109/TED.2025.3545007","DOIUrl":"https://doi.org/10.1109/TED.2025.3545007","url":null,"abstract":"In recent years, there has been significant interest in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). Multiple investigations have documented the advancement of AOS TFTs, which are utilized in 2T0C dynamic random access memory (DRAM). This work investigates the hysteresis and reliability performance of InGaZnO (IGZO) TFTs and InSnO (ITO) TFTs under different annealing conditions. ITO TFTs have superior electrical performance, with an extremely little hysteresis of practically zero volts and threshold voltage shifts of less than 0.07 V with negative and positive bias stress (PBS) lasting 1000 s. The analysis of hysteresis relies on considering the traps existing at the interface between the gate dielectric and the channel, the interface between the passivation layer and the channel, and electric dipoles. Meanwhile, the good reliability of ITO TFTs is attributed to the simple composition of the ITO channel and the change in valence state of Sn during annealing. The text discusses the illumination of the influence caused by the shifting of threshold voltage in 2T0C DRAM read transistors. ITO read transistors exhibit a retention duration that is more than seven times longer. This finding indicates that the ITO channel is a potential avenue for research within the realm of 2T0C DRAM.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1763-1768"},"PeriodicalIF":2.9,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Sensitivity of Low-Frequency Noise to Thermal Stress in a Graphene-on-SiC Hall Effect Sensor Dedicated to Elevated Temperatures

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-03 DOI: 10.1109/TED.2025.3543788

Ł. Ciura;J. Jagiełło;A. Dobrowolski;K. PięTak-Jurczak;T. Ciuk

{"title":"Sensitivity of Low-Frequency Noise to Thermal Stress in a Graphene-on-SiC Hall Effect Sensor Dedicated to Elevated Temperatures","authors":"Ł. Ciura;J. Jagiełło;A. Dobrowolski;K. PięTak-Jurczak;T. Ciuk","doi":"10.1109/TED.2025.3543788","DOIUrl":"https://doi.org/10.1109/TED.2025.3543788","url":null,"abstract":"We studied the effect of abnormal thermal stress on a graphene-on-SiC Hall effect sensor dedicated to elevated temperatures. After subsequent thermal stresses at 823, 873, and 923 K provided by rapid thermal processing (RTP), we monitored the transport parameters of a sensor (sheet resistance, mobility, and carrier concentration) and its low-frequency noise (LFN). We showed that RTP increases the average carrier concentration and widens its distribution across the device, as confirmed by Raman spectroscopy. We observed that the LFN magnitude significantly increases after subsequent stresses, much more than the average resistance, which decreases. The evaluation of thermal stress in electronic devices should include the noise-based method because it seems to be a much more sensitive indicator of thermal degradation than typically monitored electronic transport parameters. We showed that the RTP promotes nonhomogeneity within the sensor, the presence of which is directly exposed by the LFN measurements. Moderate thermal degradation (noise and resistances) up to 873 K suggests that the graphene-on-SiC Hall platform is promising for magnetic field detection at elevated temperatures. Furthermore, the methodology of 1/f noise analysis is universally applicable whenever the noise model of the active layer can be represented by a resistance network.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"2000-2005"},"PeriodicalIF":2.9,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Corrections to “Stimulated Secondary Emission of Single-Photon Avalanche Diodes”

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2024.3520276

Kurtis Raymond;Fabrice Retiere;Harry Lewis;Andrea Capra;Duncan McCarthy;Austin de St Croix;Giacomo Gallina;Joe McLaughlin;Juliette Martin;Nicolas Massacret;Paolo Agnes;Ryan Underwood;Seraphim Koulosousas;Peter Margetak

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IEEE Transactions on Electron Devices Information for Authors

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IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536347

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IEEE Transactions on Electron Devices Publication Information

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536339

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Call for Papers: Journal of Lightwave Technology Special Issue on OFS-29

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536343

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Call for Papers for a Special Issue of IEEE Transactions on Materials for Electron Devices: Exploration of the Exciting World of Multifunctional Oxide-Based Electronic Devices: From Material to System-Level Applications

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536341

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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536345

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Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536349

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