IEEE Transactions on Electron Devices最新文献

{"title":"An InGaZnO Synaptic Transistor Using Titanium-Oxide Traps at Back Channel for Neuromorphic Computing","authors":"B. F. Yang;C. Zhang;Z. H. Zhang;D. Wang;Z. X. Wu;Y. W. Tong;P. T. Lai;C. Li;X. D. Huang","doi":"10.1109/TED.2025.3558719","DOIUrl":"https://doi.org/10.1109/TED.2025.3558719","url":null,"abstract":"Synaptic transistors have attracted growing interest due to their potential in bio-inspired computing. Conventional synaptic transistors typically rely on charge traps, dipoles, or mobile ions/vacancies in the gate dielectric for channel conductance modulation, which causes performance deterioration owing to Coulomb scattering. Herein, a new dual-gate InGaZnO (IGZO) synaptic transistor is proposed. An unisolated top gate with post metal annealing (PMA) treatment is designed to block moisture and form titanium-oxide (TiOx)-associated defects at the IGZO back channel. By using the TiOx defects rather than the gate dielectric to regulate the channel conductance, Coulomb scattering is avoided, and so the device shows relatively high carrier mobility [~11.5 cm2/(V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>s)] and small subthreshold swing (~231 mV/dec). Additionally, typical biological synaptic functions are successfully mimicked, and a relatively low device-to-device variation (~7.2%) for conductance modulation is obtained. Furthermore, a convolutional neural network (CNN) based on this device achieves high accuracy in the image classification tasks, demonstrating the great potential of the proposed device in neuromorphic computing.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"2943-2948"},"PeriodicalIF":2.9,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144185937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ferroelectric Assisted Programmable Carrier Stored Layer for Ultralow Turn-Off Loss LIGBTs","authors":"Xiang Wang;Lingyun Zhang;Libin Liu;Xiaobo She;Zhongxin Liang;Jiajia Liao;Lei Xiao;Yichun Zhou;Yufeng Guo;Yu Liu","doi":"10.1109/TED.2025.3558766","DOIUrl":"https://doi.org/10.1109/TED.2025.3558766","url":null,"abstract":"This work represents the first exploration of ferroelectric HfZrO (HZO) in lateral insulated gate bipolar transistors (LIGBTs), introducing a novel approach to reduce turn-off loss by incorporating a separate ferroelectric control electrode on the carrier stored layer (CSL). Utilizing the unique properties of ferroelectric HZO, such as its non-volatile nature and strong polarization field, the proposed Fe-controlled CSL enables dynamic modulation of carrier concentration in the LIGBT structure. This novel design demonstrates a remarkable 73.6% and 64.9% reduction in turn-off loss (<inline-formula> <tex-math>${E} _{text {off}}$ </tex-math></inline-formula>) compared to conventional CSL LIGBT and shorted anode LIGBT, respectively, while maintaining the same <sc>on</small>-state voltage (<inline-formula> <tex-math>${V} _{text {on}}$ </tex-math></inline-formula>). Comprehensive characterization of the HZO material confirms its excellent ferroelectric properties, including high remnant polarization, exceptional endurance, and robust data retention capability. Simulation analysis of the carrier concentration distribution reveals the mechanism of Fe-controlled CSL modulation on carrier distribution. This innovative Fe-controlled CSL technology provides a new pathway to overcome the trade-off between conduction and turn-off characteristics in conventional LIGBT devices, paving the way for the development of high-performance power devices with great application prospects in fields requiring high power density integration.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3058-3062"},"PeriodicalIF":2.9,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144185797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Systematic Study of Nickel Silicide Based on Wafer-Scale Electrical Testing in 12-in 55 nm CMOS Technology","authors":"Weitong Zhang;Jianghong Wang;Yang Xu;Wenzhang Fang;Ran Tao;Xiaohui Yu;Yishu Zhang;Zhiyuan Cheng;Yunyan Zhang","doi":"10.1109/TED.2025.3556407","DOIUrl":"https://doi.org/10.1109/TED.2025.3556407","url":null,"abstract":"Nickel silicide quality can greatly influence the CMOS devices and hence chip performances, especially for the technology with smaller nodes. As chips nowadays are normally composed of a huge number of devices, the influence is difficult to be detected by studying a few individual devices due to the probability of defect formation. Thus, wafer-scale investigation is necessary to obtain the overall impact of defect formation, which is however rarely reported. Here, the effect of various fabrication processes on the quality of Ni silicide is investigated systematically by electrical wafer mapping tests of SRAM arrays on 12-in wafers produced by 55 nm CMOS technology that are highly sensitive to defects. It is found that the Siconi (Trademark) precleaning and the 2nd stage rapid thermal annealing (RTA) have a large process window; while the thin thickness of Ni–Pt film and/or the high temperature of 1st stage RTA can greatly promote the Ni encroachment defect formation, which is due to the excess thermal budget that enhances the diffusion of Ni to the Si defects. With the optimization of silicidation process, the formation of Ni encroachment can be effectively suppressed, and the leakage current of SRAM arrays with low (mean value of <inline-formula> <tex-math>$7.97times 10^{{4}}$ </tex-math></inline-formula> pA) and uniform distribution (standard deviation of <inline-formula> <tex-math>$8.58times 10^{{3}}$ </tex-math></inline-formula> pA) is obtained, and 1M SRAM yield is largely increased to 97.18%, which is outstanding even among the industry technology. This systematic study can provide valuable insight into the defect formation on industrial wafer scale, which can guide the development of high-performance Ohmic contact for CMOS technology with small nodes.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2522-2529"},"PeriodicalIF":2.9,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The γ-Ray TID Effect and Irradiation Damage Recovery on β-Ga₂O₃/Al₂O₃ MOSCAPs","authors":"Song Li;Mingchao Yang;Leidang Zhou;Liang Chen;Silong Zhang;Fangbao Wang;Zhang Wen;Songquan Yang;Ming Li;Weihao Liu;Li Geng;Yue Hao;Xiaoping Ouyang","doi":"10.1109/TED.2025.3552361","DOIUrl":"https://doi.org/10.1109/TED.2025.3552361","url":null,"abstract":"In this study, the impact of &lt;inline-formula&gt; &lt;tex-math&gt;$gamma $ &lt;/tex-math&gt;&lt;/inline-formula&gt;-ray total ionizing dose (TID) irradiation on the electrical performance of beta-gallium oxide (&lt;inline-formula&gt; &lt;tex-math&gt;$beta $ &lt;/tex-math&gt;&lt;/inline-formula&gt;-Ga2O3)/Al2O3 MOSCAPs was investigated, and a new irradiation damage recovery method was also proposed using the supercritical N2O (SCN2O) fluid postoxidation annealing (POA) process. After a cumulative &lt;inline-formula&gt; &lt;tex-math&gt;$gamma $ &lt;/tex-math&gt;&lt;/inline-formula&gt;-ray dose of 1.108 Mrad (SiO2), the net carrier concentration (&lt;inline-formula&gt; &lt;tex-math&gt;${N} _{text {d}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;) decreased by 28.7%, and the interface state density (&lt;inline-formula&gt; &lt;tex-math&gt;${D} _{text {it}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;) increased from &lt;inline-formula&gt; &lt;tex-math&gt;$4.41times 10^{{11}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; to &lt;inline-formula&gt; &lt;tex-math&gt;$5.12times 10^{{11}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; &lt;inline-formula&gt; &lt;tex-math&gt;${mathrm {eV}}^{-{1}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;&lt;inline-formula&gt; &lt;tex-math&gt;${mathrm {cm}}^{-{2}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;, according to the frequency-dependent capacitance-voltage (C–V) measurements. Meanwhile, the effective trapped charge density (&lt;inline-formula&gt; &lt;tex-math&gt;${N} _{text {eff}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;) was reduced from &lt;inline-formula&gt; &lt;tex-math&gt;$- 1.82times 10^{{12}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; to &lt;inline-formula&gt; &lt;tex-math&gt;$- 1.37times 10^{12}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; &lt;inline-formula&gt; &lt;tex-math&gt;${mathrm {eV}}^{-{1}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;&lt;inline-formula&gt; &lt;tex-math&gt;${mathrm {cm}}^{-{2}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;, leading to a decreased flat-band voltage (&lt;inline-formula&gt; &lt;tex-math&gt;${V} _{text {fb}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;), which was attributed to the formation of positively charged oxide trapped charge (&lt;inline-formula&gt; &lt;tex-math&gt;${N} _{text {ot}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;). What is more, the forward leakage current density increased by ten times, and a 9.5% decrease in the breakdown voltage (&lt;inline-formula&gt; &lt;tex-math&gt;${V} _{text {br}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;) was observed according to the current-voltage (I–V) measurements. Moreover, the leakage current analysis indicated that the changes in the I–V characteristics were primarily caused by variations in &lt;inline-formula&gt; &lt;tex-math&gt;${D} _{text {it}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; and &lt;inline-formula&gt; &lt;tex-math&gt;${N} _{text {ot}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;. In addition, after the SCN2O POA process at &lt;inline-formula&gt; &lt;tex-math&gt;$120~^{circ }$ &lt;/tex-math&gt;&lt;/inline-formula&gt;C, the damages of the irradiated device can be repaired. Specifically, the material properties, such as &lt;inline-formula&gt; &lt;tex-math&gt;${N} _{text {d}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;, &lt;inline-formula&gt; &lt;tex-math&gt;${D} _{text {it}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;, and &lt;inline-formula&gt; &lt;tex-math&gt;${N} _{text {eff}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;, and the electrical properties of &lt;inline-formula&gt; &lt;tex-math&gt;${V} _","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2220-2225"},"PeriodicalIF":2.9,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Magnetic Field on Stability and Power of Vacuum Electronic Amplifiers","authors":"Vadim Jabotinski;Alexander N. Vlasov;Simon J. Cooke;Thomas M. Antonsen","doi":"10.1109/TED.2025.3556097","DOIUrl":"https://doi.org/10.1109/TED.2025.3556097","url":null,"abstract":"The theory and modeling of the effects of magnetic focusing field on the stability, gain, and power of the large class of VE amplifiers based on RF structures with a series of interaction gaps used in traveling-wave tubes, klystrons, and other VE devices is presented. The RF structure and e-beam lumped circuit parameter matrices are computed for different magnetic focusing conditions, and then the self-excitation thresholds are obtained from the determinant equations. A new formulation for the RF structure gain is derived and used for the found self-excitation thresholds. An analytical solution of the beam envelope equation not limited by the small-amplitude oscillations is obtained and employed to define the magnetic focusing conditions providing various beam envelope radii and oscillation amplitudes. It is shown for the example <inline-formula> <tex-math>${K} _{a}$ </tex-math></inline-formula>-band serpentine structure that the optimum magnetic focusing, e-beam radius, as well as axial position of the oscillating beam envelope allow significantly greater gain and power. The methods and analysis described here are essential for the computation, research, and design of advanced RF amplifiers.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2604-2610"},"PeriodicalIF":2.9,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Systematic Investigation on the Performance and Reliability of 4H-SiC MOSFETs With Nonkiller Epitaxial Morphological Defects","authors":"Yibo Zhang;Xiaoyan Tang;Hao Yuan;Jingkai Guo;Haohang Yang;Yu Zhou;Fengyu Du;Keyu Liu;Zhiwen Zhang;Chenyu Wang;Aijun Zhang;Qingwen Song;Chao Han;Yuming Zhang","doi":"10.1109/TED.2025.3556053","DOIUrl":"https://doi.org/10.1109/TED.2025.3556053","url":null,"abstract":"Epitaxial morphological defects in silicon carbide (SiC) MOSFETs can induce device failures. While chip probing (CP) methods can identify and distinguish many failed devices, some nonkiller epitaxial morphological defects often pass the initial screening, leading to early failures in practical applications. This study investigates the impact of SiC morphological defects on device performance, short-circuit (SC) reliability, and long-term reliability. Through a combination of experimental analysis and TCAD simulations, strong evidence is provided for the diverse effects of morphological defects on device performance. The results reveal that the Carrot-Defect significantly degrades the quality of the gate oxide, leading to premature failures in long-term reliability and SC tests. In contrast, the Triangle-Defect primarily affects the blocking capability of the device, while the SC performance of devices with such morphological defects that pass screening does not significantly deteriorate.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2492-2498"},"PeriodicalIF":2.9,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Density Sensor Array Based on a-IGZO TFT for Pressure and Light Response","authors":"Jianhua Zhang;Jixing Zhou;Longwei Xue;Junshuai Dai;Xudong Zhang;Hai Liu;Longlong Chen;Tingting Zhao","doi":"10.1109/TED.2025.3558495","DOIUrl":"https://doi.org/10.1109/TED.2025.3558495","url":null,"abstract":"Detection capabilities similar to those of eyeballs and skin, such as pressure and light sensing, are crucial for electronic skins, bionic eyeballs, human-machine interactions, and biomimetic robots. Previous studies have primarily focused on investigating individual physical quantities, while simultaneously mapping these quantities remains challenging. This article introduces a dual-parameter sensor array based on amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The array is capable of simultaneously and independently detecting pressure (106.9 kPa<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>, ranging from 0.5 to 10 kPa) and ultraviolet (UV) light (0.5 (<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>W/cm2)<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>, ranging from 0 to <inline-formula> <tex-math>$76~mu $ </tex-math></inline-formula>W/cm2). The pressure detection is achieved through a patterned conductive film connected to the source electrode of the TFTs, while the UV light is detected by photogenerated electron-hole pairs in the a-IGZO channel. Integration of TFTs increase the spatial resolution of both the pressure and light sensor array to 128 pixels per square centimeter (PPSC). The development of this dual-parameter high-density sensor array holds profound significance for applications in biomimetic eyeballs and electronic skin, such as texture and shape recognition.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3274-3279"},"PeriodicalIF":2.9,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"C-Band β-Ga₂O₃-on-SiC RF Power MOSFETs With High Output Power Density and Low Microwave Noise Figure","authors":"Min Zhou;Hong Zhou;Sami Alghamdi;Guangjie Gao;Xi Liu;Mingjie Xiang;Xiaojin Chen;Zhihong Liu;Saud Wasly;Yue Hao;Jincheng Zhang","doi":"10.1109/TED.2025.3558492","DOIUrl":"https://doi.org/10.1109/TED.2025.3558492","url":null,"abstract":"In this letter, we show that <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3-on-SiC RF power metal-oxide-semiconductor field-effect transistors (MOSFETs) can achieve a high output power density (<inline-formula> <tex-math>${P}_{text {out}}$ </tex-math></inline-formula>) for C-band applications by implementing a heavily doped channel to reduce channel resistance and a high thermal conductivity SiC substrate to enhance heat dissipation. By doing so, <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3-on-SiC RF MOSFETs demonstrate a drain current density (<inline-formula> <tex-math>${I}_{text {D}}$ </tex-math></inline-formula>) of 730 mA/mm and peak transconductance (gm) of 81 mS/mm. As a result, cut-off frequency (<inline-formula> <tex-math>${f}_{text {T}}$ </tex-math></inline-formula>) and maximum oscillation frequency (<inline-formula> <tex-math>${f}_{max }$ </tex-math></inline-formula>) of 19.2 and 35.3 GHz are achieved, respectively. Benefited from the suppressed self-heating effect under high drain bias (<inline-formula> <tex-math>${V}_{text {DS}}$ </tex-math></inline-formula>) operation condition, the RF power performances with output power density (<inline-formula> <tex-math>${P}_{text {out}}$ </tex-math></inline-formula>) =3.5 W/mm at 4 GHz and <inline-formula> <tex-math>${P}_{text {out}} =3.2$ </tex-math></inline-formula> W/mm at 6 GHz are reported. To the best of all the authors’ knowledge, this is the highest <inline-formula> <tex-math>${P}_{text {out}}$ </tex-math></inline-formula> at C-Band among all <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 RF power FETs. In addition, this work studies the microwave noise characteristics of the <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 RF MOSFETs at frequency (f) range of 2–15 GHz. The device is able to achieve a low minimum-noise figure (NFmin) of 1.4 dB at 2 GHz and 1.8–2.5 dB at 4–6 GHz. <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 RF power MOSFETs with heavily doped channel and high thermal conductivity substrate verify their great promise for future high power, high frequency, and low noise RF electronics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"2874-2878"},"PeriodicalIF":2.9,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144196700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Charge Carrier Lifetime and Trap States in Novel Pure-Boron-Based Ultrashallow p – n Junctions","authors":"Tao Wang;Alexander Melnikov;Wenxin Jiang;Tianyan Han;Xiaopu Gu;Yuanjun Guan;Jiayi Wang;Qianchuan Yi;Tianyu Long;Yanqi Zhou;Yichen Zhang;Li Zhang;Binbing Huang;Andreas Mandelis;Lilei Hu","doi":"10.1109/TED.2025.3556041","DOIUrl":"https://doi.org/10.1109/TED.2025.3556041","url":null,"abstract":"Trap states and carrier transport parameters are critical to the performance of p–n-junction-based photodetectors. This study investigates ultrashallow p–n junctions for ultraviolet and low-energy particle detection fabricated using chemical vapor deposition-based pure-boron deposition (CVD-PB) with a junction depth only tens of nanometers, in comparison, also using ion implantation (IMP), epitaxy (EPI), and vacuum evaporation (VEP). Deep-level photothermal spectroscopy (DLPTS) and homodyne photocarrier radiometry (HoPCR) were used to analyze charge carrier dynamics, including charge carrier lifetime and trap states. A phenomenological theoretical model for HoPCR signals was developed to explain trap-state-modulated carrier transport dynamics. CVD-PB junctions demonstrated long recombination lifetimes in the doping layer (<inline-formula> <tex-math>$7.09~pm ~0.01~mu $ </tex-math></inline-formula>s) and bulk (<inline-formula> <tex-math>$35.80~mu $ </tex-math></inline-formula>s), comparable to high-energy ion-implanted (HE-IMP) junctions (<inline-formula> <tex-math>$5.68~pm ~0.58$ </tex-math></inline-formula> and <inline-formula> <tex-math>$36.10~mu $ </tex-math></inline-formula>s). EPI and VEP junctions have short carrier bulk recombination lifetimes (<inline-formula> <tex-math>$1.95~pm ~0.17$ </tex-math></inline-formula> and <inline-formula> <tex-math>$0.63~pm ~0.03~mu $ </tex-math></inline-formula>s, respectively). DLPTS revealed an electron trap in the EPI junction with an activation energy of 0.09 eV and a capture cross section of <inline-formula> <tex-math>$7.52times 10^{-{20}}~pm ~6.82times 10^{-{21}}$ </tex-math></inline-formula> cm2; no detectable traps were observed in CVD-PB or HE-IMP junctions. Simulations showed that EPI junctions had twice the dark current of CVD-PB and HE-IMP at 10 V, with a 15% reduction in photocurrent. When reversely biased at 5 V and without typical guarding ring designs generally used in optoelectronics, CVD-PB exhibited the lowest dark current (<inline-formula> <tex-math>$0.95~mu $ </tex-math></inline-formula>A/cm<inline-formula> <tex-math>${}^{{2}}$ </tex-math></inline-formula>) when compared to HE-IMP (<inline-formula> <tex-math>$3.25~mu $ </tex-math></inline-formula>A/cm<inline-formula> <tex-math>${}^{{2}}$ </tex-math></inline-formula>) and EPI (<inline-formula> <tex-math>$51.77~mu $ </tex-math></inline-formula>A/cm<inline-formula> <tex-math>${}^{{2}}$ </tex-math></inline-formula>).","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 5","pages":"2444-2453"},"PeriodicalIF":2.9,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Si Nanowire Arrays FET Sensor and Interface Optimization Design for Ultrasensitive Protein Molecule Detection","authors":"Rui Jiang;Meiyan Qin;Jiawei Hu;Lingqian Zhang;Yang Zhao;Qingzhu Zhang;Mingxiao Li;Chengjun Huang","doi":"10.1109/TED.2025.3558491","DOIUrl":"https://doi.org/10.1109/TED.2025.3558491","url":null,"abstract":"This work proposes a CMOS-compatible label-free epidermal growth factor receptor (EGFR) biosensor based on 13 nm wide silicon nanowire (SiNW) arrays formed by a spaced image transfer (SIT) process. We overcome the Debye screening effect using a smaller molecule aptamer as the capture probe in order to reduce the thickness of the sensing layer and improve the interaction between the target molecule and the probe after capture through the optimization of the sensing interface. We demonstrate that the biosensor shows good stability, specificity, and a wide dynamic range (more than five orders of magnitude), and compared with traditional sensing technologies, our proposed Si nanowire field effect transistor (FET) biosensor provides a noninvasive, ultrasensitive, and stable method for fg/mL-level protein molecule detection. This will help us further understand cellular heterogeneity through single-cell protein analysis, which is expected to be used in molecular diagnostics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3106-3113"},"PeriodicalIF":2.9,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144190568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}