IEEE Transactions on Electron Devices最新文献_第5页

Sensitivity of Low-Frequency Noise to Thermal Stress in a Graphene-on-SiC Hall Effect Sensor Dedicated to Elevated Temperatures

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-03-03 DOI: 10.1109/TED.2025.3543788

Ł. Ciura;J. Jagiełło;A. Dobrowolski;K. PięTak-Jurczak;T. Ciuk

{"title":"Sensitivity of Low-Frequency Noise to Thermal Stress in a Graphene-on-SiC Hall Effect Sensor Dedicated to Elevated Temperatures","authors":"Ł. Ciura;J. Jagiełło;A. Dobrowolski;K. PięTak-Jurczak;T. Ciuk","doi":"10.1109/TED.2025.3543788","DOIUrl":"https://doi.org/10.1109/TED.2025.3543788","url":null,"abstract":"We studied the effect of abnormal thermal stress on a graphene-on-SiC Hall effect sensor dedicated to elevated temperatures. After subsequent thermal stresses at 823, 873, and 923 K provided by rapid thermal processing (RTP), we monitored the transport parameters of a sensor (sheet resistance, mobility, and carrier concentration) and its low-frequency noise (LFN). We showed that RTP increases the average carrier concentration and widens its distribution across the device, as confirmed by Raman spectroscopy. We observed that the LFN magnitude significantly increases after subsequent stresses, much more than the average resistance, which decreases. The evaluation of thermal stress in electronic devices should include the noise-based method because it seems to be a much more sensitive indicator of thermal degradation than typically monitored electronic transport parameters. We showed that the RTP promotes nonhomogeneity within the sensor, the presence of which is directly exposed by the LFN measurements. Moderate thermal degradation (noise and resistances) up to 873 K suggests that the graphene-on-SiC Hall platform is promising for magnetic field detection at elevated temperatures. Furthermore, the methodology of 1/f noise analysis is universally applicable whenever the noise model of the active layer can be represented by a resistance network.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"2000-2005"},"PeriodicalIF":2.9,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Corrections to “Stimulated Secondary Emission of Single-Photon Avalanche Diodes”

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2024.3520276

Kurtis Raymond;Fabrice Retiere;Harry Lewis;Andrea Capra;Duncan McCarthy;Austin de St Croix;Giacomo Gallina;Joe McLaughlin;Juliette Martin;Nicolas Massacret;Paolo Agnes;Ryan Underwood;Seraphim Koulosousas;Peter Margetak

引用次数: 0

IEEE Transactions on Electron Devices Information for Authors

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536347

引用次数: 0

IEEE Transactions on Electron Devices Publication Information

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536339

引用次数: 0

Call for Papers: Journal of Lightwave Technology Special Issue on OFS-29

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536343

引用次数: 0

Call for Papers for a Special Issue of IEEE Transactions on Materials for Electron Devices: Exploration of the Exciting World of Multifunctional Oxide-Based Electronic Devices: From Material to System-Level Applications

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536341

引用次数: 0

Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536345

引用次数: 0

Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-28 DOI: 10.1109/TED.2025.3536349

引用次数: 0

Radiation Degradation and Mitigation of an Ultrathin SOI SPAD Using a Perimeter Gate

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-27 DOI: 10.1109/TED.2025.3543789

Tom Klauner;Nicolas Roisin;Ottilie Bonfanti;Iman Sabri Alirezaei;Nicolas André;Denis Flandre

{"title":"Radiation Degradation and Mitigation of an Ultrathin SOI SPAD Using a Perimeter Gate","authors":"Tom Klauner;Nicolas Roisin;Ottilie Bonfanti;Iman Sabri Alirezaei;Nicolas André;Denis Flandre","doi":"10.1109/TED.2025.3543789","DOIUrl":"https://doi.org/10.1109/TED.2025.3543789","url":null,"abstract":"This work investigates the robustness of an ultrathin backside-illuminated (BSI) silicon-on-insulator (SOI) single-photon avalanche diode (SPAD) against gamma-ray irradiation for space applications. Experimental results demonstrate a breakdown voltage shift in the studied SPAD from 10.17 to 9.95 V after a total ionizing dose (TID) of 132 krad(Si). An increase in dark count rate (DCR) from 1490 to 2700 cps/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m2 at 1 V excess bias is shown at this dose. TCAD simulations explain the role of the oxide-trapped charges, induced by irradiation in the insulating layer surrounding the active region, on the SPAD performance. These trapped charges shift the peak electric field, leading to premature breakdown while the extension of the active area affected by impact ionization increases the DCR. Further simulations show that implementing a perimeter-gated structure and reducing oxide thickness can effectively mitigate these effects by leveraging capacitive effects, preventing a breakdown voltage shift. The perimeter gate (PG) lowers the simulated DCR after irradiation from 2700 to 1365 cps/<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m2, thereby enhancing the radiation resilience of ultrathin SOI SPADs beyond a TID of 132 krad(Si).","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1844-1850"},"PeriodicalIF":2.9,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-Frequency Noise Characterization of BEOL Metal–Insulator–Metal Capacitors

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-02-27 DOI: 10.1109/TED.2025.3542748

G. Giusi;Nishant Saini;K. Croes;I. Ciofi;G. Scandurra;C. Ciofi;D. Tierno

{"title":"Low-Frequency Noise Characterization of BEOL Metal–Insulator–Metal Capacitors","authors":"G. Giusi;Nishant Saini;K. Croes;I. Ciofi;G. Scandurra;C. Ciofi;D. Tierno","doi":"10.1109/TED.2025.3542748","DOIUrl":"https://doi.org/10.1109/TED.2025.3542748","url":null,"abstract":"Dielectrics are fundamental building blocks in both analog and digital electronic devices, serving various purposes, including insulating metal lines and interconnect levels in the back-end-of-line (BEOL). In this article, we investigate the leakage and low-frequency noise (LFN) properties of three different types of dielectrics, from the low-k organo-silicate glass (OSG3.0) and silica (SiO2) to the high-k alumina (Al2O3). Test structures are large area (up to <inline-formula> <tex-math>$200times 200~mu $ </tex-math></inline-formula>m2) metal-insulator–metal (MIM) capacitors, with TiN or TaNTa electrodes, that mimic well the BEOL architecture. In particular, to the best of our knowledge, no LFN study has been reported for OSGs, which are the most used class of dielectrics in the BEOL. From a physical side, current-voltage (I–V) characterization reveals that in all three dielectrics, the conduction is bulk dominated and assisted by traps, rather than limited by electrode injection. LFN measurements (LFNMs) show a typical 1/f current power spectral density (PSD) (<inline-formula> <tex-math>${S}_{I}$ </tex-math></inline-formula>) for all three dielectrics with a strongly bias-dependent gate noise parameter <inline-formula> <tex-math>$(text {GNP})propto {S}_{I}/{I}^{{2}}$ </tex-math></inline-formula> (I being the dc current), suggesting a highly nonuniform energy trap distribution, especially for Al2O3 devices. SiO2-based capacitors demonstrated the lowest leakage at equivalent fields and superior noise performance at comparable leakage currents. Al2O3 devices exhibited the highest leakage, while OSG3.0 samples showed the poorest noise characteristics, marked by pronounced electrical instability and nonstationary random telegraph signal (RTS) events.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1933-1938"},"PeriodicalIF":2.9,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143740178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0