IEEE Transactions on Electron Devices最新文献

{"title":"Device Variability and Bias-Stress Stability in Fluorine Plasma-Engineered IGZTO Thin-Film Transistors","authors":"Kai Chen;Rui Zhang;Yunlong Li","doi":"10.1109/TED.2026.3715602","DOIUrl":"https://doi.org/10.1109/TED.2026.3715602","url":null,"abstract":"Reliability of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) is critical for monolithic 3-D integration and memory applications. Although fluorine incorporation is an effective approach to improve the stability of AOS TFTs, its impacts on device variability and bias-stress stability have not been fully understood. In this work, we systematically investigate the effects of CF4 plasma treatment conditions, including treatment time and chamber pressure, on indium–gallium–zinc–tin–oxide (IGZTO) TFTs. Statistical analysis over multiple devices under each condition reveals that controlled fluorine incorporation suppresses oxygen vacancy and hydrogen-related defects and modulates the electronic structure, leading to tunable threshold voltage and field-effect mobility. However, prolonged plasma treatment induces damage to the channel and channel/gate-dielectric stack, resulting in degraded subthreshold swing, enlarged parameter dispersion, and aggravated bias-stress instability. By increasing the chamber pressure, ion bombardment energy is reduced while sufficient fluorine incorporation is preserved, enabling simultaneous improvement in device variability and bias-stress stability. Under the optimized treatment condition, the IGZTO TFTs exhibit a near-ideal subthreshold swing of ~62 mV/dec, a positive threshold voltage of ~0.32 V, and small threshold voltage shifts of +3.9 mV under +3 MV/cm and −4.8 mV under −3 MV/cm after 1000 s. These results clarify the tradeoff between fluorine passivation and plasma-induced damage and provide practical guidelines for fluorine plasma engineering of highly reliable AOS TFTs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5701-5714"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2.7-kV Ga2O3 Vertical Schottky Barrier Diode With Photo-Dielectric Field-Plate","authors":"Nafis Imtiaz Rahman;Ke Zeng","doi":"10.1109/TED.2026.3715153","DOIUrl":"https://doi.org/10.1109/TED.2026.3715153","url":null,"abstract":"In this article, we report a systematic experimental study of Ga2O3 Schottky barrier diodes (SBDs) with a novel photo-dielectric (PD) field-plate (FP) process featuring a significantly simplified fabrication procedure that can produce high-performance diodes that are comparable with chemical-vapor-deposited field-plated diodes. The effects of different FP dielectric thickness and designs were investigated on both single FP and double FP diodes. The double FP diode achieved an <sc>on</small>-resistance (<inline-formula> <tex-math>${R}_{textit {on},textit {sp}}text {)}$ </tex-math></inline-formula> of 7.5 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2, with a breakdown voltage (<inline-formula> <tex-math>${V}_{textit {br}}text {)}$ </tex-math></inline-formula> of 2.78 kV, and a 1.04 GW/cm2 power-figure-of-merit (PFOM), without any substrate etching or hetero-integration. The liquid packaging effect was investigated by comparing breakdown voltages (<inline-formula> <tex-math>${V}_{textit {br}}text {)}$ </tex-math></inline-formula> measured under two types of dielectric liquid immersion, indicating that the highest <inline-formula> <tex-math>${V}_{textit {br}}$ </tex-math></inline-formula> observed in these experiments is likely extrinsic and packaging-limited.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5354-5359"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Fabrication of a 7-GHz Bandpass Filter Based on Solidly Mounted A1-Mode LiNbO3 XBAR With Dielectric Bragg Reflectors","authors":"Zishuo Zhang;Rui Ding;Junye Lin;Mingyu Chen;Long Chen;Peng Zheng;Sulei Fu;Shurong Dong;Jikui Luo;Weipeng Xuan","doi":"10.1109/TED.2026.3714380","DOIUrl":"https://doi.org/10.1109/TED.2026.3714380","url":null,"abstract":"Achieving both strong acoustic confinement and wafer-level manufacturability remains a key challenge for A1-mode laterally excited bulk acoustic wave resonators (XBARs), particularly for conventional suspended structures requiring membrane release. This work presents a solidly mounted XBAR (SM-XBAR) based on a 128° Y-cut LiNbO3 thin film and an asymmetrically optimized SiO2/Ta2O5 Bragg reflector for suppressing substrate-side acoustic leakage. A finite-element model considering the dispersive characteristics of A1 Lamb waves is employed to optimize the reflector structure, resulting in a broadband acoustic stopband covering 6–9 GHz. The optimized reflector improves the series quality factor <inline-formula> <tex-math>${Q}_{s}$ </tex-math></inline-formula> from 100 to 575 and the parallel quality factor <inline-formula> <tex-math>${Q}_{p}$ </tex-math></inline-formula> from 185 to 650 while preserving effective electromechanical coupling coefficient <inline-formula> <tex-math>${k}_{textit {eff}}^{{2}} gt 17$ </tex-math></inline-formula>%. To validate practical applicability, a fourth-order ladder filter is implemented, achieving a center frequency of 6.74 GHz, a 10% fractional bandwidth (FBW), and more than 40-dB out-of-band rejection. The proposed solidly mounted architecture eliminates membrane release and provides a manufacturable and mechanically robust solution for sub-8-GHz RF filtering applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5830-5837"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"UV-Induced Surface Aminolysis of Liquid Crystal Polymer for Quasihermetic Packaging","authors":"Xin Tang;Ran Lu;Lin Cui;Xianxing Ju;Jiaqi Ni;Yanyan Xu;Qing Wang;Mingxiang Chen","doi":"10.1109/TED.2026.3718860","DOIUrl":"https://doi.org/10.1109/TED.2026.3718860","url":null,"abstract":"The internal chips of microwave and radio frequency (RF) devices must be isolated from moisture and contaminants to ensure long-term reliability. Conventional welding processes rely on metallic surfaces and high-temperature processing, necessitating surface metallization of nonmetallic materials such as liquid crystal polymer (LCP) lids; moreover, repeated thermal shock tends to compromise device reliability. On the contrary, bonding an LCP lid to a 3-D direct-plated-copper (DPC) ceramic substrate with an epoxy adhesive enables quasihermetic sealing at a lower temperature, effectively avoiding thermal damage. However, the inert LCP surface remains the key bottleneck of this approach. In this work, a UV-induced aminolysis method was developed for surface modification of Type I LCP: an ethylenediamine solution was applied to the LCP surface and irradiated with UV light at room temperature, causing cleavage of surface ester bonds and covalent grafting of amine groups. The grafted amines participate in chemical bonding with epoxy groups to achieve high-strength interfacial adhesion. After surface abrasion and modification, the failure mode of the joint transitioned from interfacial adhesive failure to cohesive fracture within the LCP bulk, and the shear strength increased from 12.75 to 23.01 MPa. The sealed packages achieved a helium leak rate of <inline-formula> <tex-math>$5.85times 10^{-{6}}$ </tex-math></inline-formula>atm<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm3/s, with negligible degradation in performance after thermal shock cycling (–<inline-formula> <tex-math>$40~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$150~^{circ }$ </tex-math></inline-formula>C, 200 cycles) and exposure to <inline-formula> <tex-math>$85~^{circ }$ </tex-math></inline-formula>C/85% RH for 500 h. This room-temperature, metallization-free approach provides a new route for quasihermetic packaging of RF devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5570-5576"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic Effects of Oxygen Annealing and Low-Fluence Kr Ion Irradiation on 4H-SiC and β-Ga2O3","authors":"Yuhao Wang;Yun Li;Chenglin Liao;Weihao Lin;Zhimei Yang;Min Gong;Mingmin Huang;Yao Ma;Gang Xiang","doi":"10.1109/TED.2026.3718393","DOIUrl":"https://doi.org/10.1109/TED.2026.3718393","url":null,"abstract":"This study investigates the synergistic effects of oxygen (<inline-formula> <tex-math>${mathrm{O}}_{{2}}text {)}$ </tex-math></inline-formula> annealing and low-fluence Kr ion irradiation on the electrical performance of the vertical 4H-silicon carbide (SiC) and <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 Schottky barrier diodes (SBDs). After combined treatment with O2 annealing at <inline-formula> <tex-math>$350~^{circ }$ </tex-math></inline-formula>C for 30 min and 429.4-MeV Kr ion irradiation with a fluence of <inline-formula> <tex-math>${1}{,}times {,}{10} ^{{7}}$ </tex-math></inline-formula> ions/cm2, both SBDs exhibit significant improvements in electrical characteristics, including increased forward current density (<inline-formula> <tex-math>${J}_{F}text {)}$ </tex-math></inline-formula>, and reduced leakage current density (<inline-formula> <tex-math>${J}_{R}text {)}$ </tex-math></inline-formula>. Notably, the interface state density (<inline-formula> <tex-math>${N}_{textit {SS}}text {)}$ </tex-math></inline-formula> is decreased by approximately 75% in 4H-SiC SBDs, but remains stable in <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 SBDs. Deep-level transient spectroscopy (DLTS) further indicates that the concentration (<inline-formula> <tex-math>${N}_{T}text {)}$ </tex-math></inline-formula> of <inline-formula> <tex-math>${mathrm{Z}}_{text {1/ {2}}}$ </tex-math></inline-formula>-related traps in 4H-SiC exhibits minimal change, while in <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 SBDs, the <inline-formula> <tex-math>${N}_{T}$ </tex-math></inline-formula> in E2 defects drops dramatically by 92%, the E3 defect traps are effectively eliminated through the combined treatment, and the <inline-formula> <tex-math>${N}_{textit {SS}}$ </tex-math></inline-formula> shifts toward deeper energy levels, collectively reducing defect-assisted conduction and contributing to an increase in SBH. Overall, these findings demonstrate that both interface passivation optimization in 4H-SiC and bulk defect reduction combined with interface-state redistribution in <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 are effective strategies for enhancing SBD performance, thereby providing a solid foundation for the development of robust power electronics for extreme environments.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5366-5372"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Parallel-Unit Count and Temperature-Dependent Optoelectronic Performance of Green Micro-LEDs","authors":"Rong-Xing Wu;Rui-Feng Liu;Mai-Jia Lin;Yu-Xi Zhang;Long-Teng Wang;Wen-An Guo;Ming-He Wan;Ru-Zheng Gao;Yu-Han Su;Shi-Biao Liu;Hao-Chung Kuo;Zhong Chen;Ting-Zhu Wu","doi":"10.1109/TED.2026.3716676","DOIUrl":"https://doi.org/10.1109/TED.2026.3716676","url":null,"abstract":"Thermal management is critical for high-resolution micro light-emitting diode (micro-LED) displays, as elevated junction temperatures compromise luminous efficiency and device reliability. This article investigates the optoelectronic performance of green InGaN/GaN micro-LED arrays with varying parallel-unit counts. While increasing the number of parallel units enhances optical output, it exacerbates heat accumulation. In particular, increasing the unit count from 1 to 4 reduces the peak external quantum efficiency (EQE) from 17.39% to 14.24% and shifts the corresponding current density (<inline-formula> <tex-math>${J}_{text {EQE},textit {max}}text {)}$ </tex-math></inline-formula> from 5.98 to 6.31 A/cm2. These thermal degradation effects are intensified when the operating temperature rises from 293 to 333 K, evidenced by a continuous EQE drop, a higher <inline-formula> <tex-math>${J}_{text {EQE},textit {max}}$ </tex-math></inline-formula>, and spectral broadening. The study demonstrates a synergistic amplification between ambient heat and the additional thermal load from array integration, emphasizing the critical need for efficient thermal design in high-brightness, integrated micro-LED arrays.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5634-5639"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonvolatile OR Logic Gates Enabled by Single Quad-RRAM Device","authors":"Wenjin Yang;Yang Shen;Chunxin Li;Yuhao Zhou;Ziming Wang;Wenxuan Sun;Peng Liu;Ziyu Liu;Xiaoxin Xu;He Tian;Yabin Sun","doi":"10.1109/TED.2026.3714363","DOIUrl":"https://doi.org/10.1109/TED.2026.3714363","url":null,"abstract":"Implementing energy-efficient in-memory computing with minimized hardware overhead remains a critical challenge. In this study, a monolithically integrated quad-resistive random access memory (RRAM) device is proposed and experimentally verified for area-efficient “OR” logic operations. A vertically stacked TiN/HfO2/Pt/HfO2/TiN structure is adopted to integrate four RRAM cells within a single device footprint. The intermediate common electrode is utilized to effectively decouple the potential distributions of the upper and lower layers, thereby enabling parallel multiport excitation without electrical crosstalk. To elucidate the underlying physics, a 3-D kinetic Monte Carlo (KMC) simulation framework is established to visualize the field-driven stochastic filamentary evolution. Compared with conventional CMOS-based “OR” logic gates, the device count for the proposed device is reduced from 6 to 1, and correspondingly, the footprint can be saved by 83.3%. Furthermore, zero static power consumption is achieved due to the nonvolatility of the HfO2 layer. This single-device logic paradigm demonstrates high potential for high-density 3-D integrated computing systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5528-5534"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Over 2 GW/cm2 Low Leakage Vertical β-Ga2O3 Schottky Barrier Diode With Multizone JTE via Self-Aligned NiO/β-Ga2O3 Co-Etching","authors":"Lequan Wang;Junpeng Wen;Weibing Hao;Jinyang Liu;Song He;Qiuyan Li;Xuanze Zhou;Guangwei Xu;Shu Yang;Shibing Long","doi":"10.1109/TED.2026.3714748","DOIUrl":"https://doi.org/10.1109/TED.2026.3714748","url":null,"abstract":"In this work, a vertical <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 Schottky barrier diode (SBD) featuring a self-aligned mesa and multizone junction termination extension (MZ-MJTE) is proposed. Enabled by a simple fabrication process, the MZ-MJTE SBD reduces the sensitivity of conventional single-zone JTE (SZ-JTE) to effective p-type charge density, broadens the process window, and achieves efficient electric field management. Process optimization identified a BCl3/Ar gas mixture of 35:5 as the optimal condition for etching <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 and NiO simultaneously. With structure parameters optimized via TCAD simulations, the MZ-MJTE SBD achieves a lowest <inline-formula> <tex-math>${R}_{text {on, {sp}}}$ </tex-math></inline-formula> of 4.41 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2 and a breakdown voltage (<inline-formula> <tex-math>${V}_{text {br}}text {)}$ </tex-math></inline-formula> exceeding 3000 V, yielding a highest power figure-of-merit (PFOM) of 2.04 GW/cm2. Statistically, the devices exhibit an average <inline-formula> <tex-math>${R}_{text {on, {sp}}}$ </tex-math></inline-formula> of 4.86 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2 and an average <inline-formula> <tex-math>${V}_{text {br}}$ </tex-math></inline-formula> of 2718 V, corresponding to an average PFOM of 1.52 GW/cm2, which ranks among the best reported values for vertical <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 SBDs. Moreover, the MZ-MJTE SBD maintains a low leakage current below 0.0002 A/cm2 even at −2500 V and demonstrates stable operation up to 448 K, indicating excellent thermal stability and promising potential for high temperature applications. This work provides a novel multizone JTE termination with a simple fabrication scheme and effective electric field management, offering a practical pathway toward high-performance <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 power devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5477-5483"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanism and Experiments of a Novel Equicapacitance Dielectric Termination Technology","authors":"Yiduo Xie;Qiyi Wu;Teng Liu;Longhui Lin;Shengyuan Wang;Zhenyan Liu;Yueyu Zhang;Nanzhuo Huang;Jie Long;Qi Sun;Nailong He;Sen Zhang;Yongsheng Sun;Hao Fang;Wentong Zhang;Ming Qiao;Zhaoji Li;Bo Zhang","doi":"10.1109/TED.2026.3714749","DOIUrl":"https://doi.org/10.1109/TED.2026.3714749","url":null,"abstract":"This work proposes the mechanism of a novel equicapacitance dielectric termination technology (E-DTT) and conducts experimental verification. The E-DTT incorporates MIS trenches in the termination region of the homogenization field (HOF) device, featuring discrete trenches of uniform size and continuous trenches of varying sizes across different curvature radii while ensuring an equal count of discrete trenches that are linked to the surface metal ring. The continuous trenches situated between the discrete trenches are left in a floating state, thereby addressing the problem of voltage division discrepancies arising from unequal MIS capacitance in the termination region and achieving the equicapacitance feature of the E-DTT structure. For the first time, the new E-DTT enables a HOF at a high-doping dose of up to <inline-formula> <tex-math>${9} times {10} ^{{12}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{-{2}}$ </tex-math></inline-formula> in the drift region, significantly enhancing the performance of HOF devices. Experimental results demonstrate that the E-DTT device achieved a breakdown voltage <inline-formula> <tex-math>${V}_{text {B}}$ </tex-math></inline-formula> of 667.9 V and a specific <sc>on</small>-resistance <inline-formula> <tex-math>${R}_{mathrm {ON}, mathrm{sp}}$ </tex-math></inline-formula> of 38.4 m<inline-formula> <tex-math>$Omega ~cdot $ </tex-math></inline-formula> cm2, representing a 21.7% reduction compared to previously reported HOF devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5471-5476"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integration of Microjet-Tesla Microchannels for Thermal Management of GaN-on-SiC HEMTs","authors":"Longbing Yi;Xuefeng Zheng;Wen Hong;Yuan Liu;Chao Zhang;Shunyu Wang;Danmei Lin;Rui Han;Yingzhe Wang;Kang Li;Xiaohua Ma;Yue Hao","doi":"10.1109/TED.2026.3718861","DOIUrl":"https://doi.org/10.1109/TED.2026.3718861","url":null,"abstract":"The self-heating effect in gallium nitride (GaN) high-electron-mobility-transistors (HEMTs) severely limits their output characteristics. In this work, a tesla-type microchannel (MC) heat sink integrated with microjet impingement is proposed to mitigate the self-heating effect in GaN HEMTs. The thermal performance of microjet-tesla MCs is evaluated through both experimental and numerical methods, and the electrical characteristics of the GaN HEMT are evaluated experimentally. The numerical results indicate that microjet-tesla MCs significantly improve convective heat transfer by enhancing the fluid mixing and periodic disruption of thermal and velocity boundary layers. This enables a remarkable performance evaluation criterion (PEC) of 1.371, demonstrating a substantial enhancement in heat transfer efficiency. Furthermore, the experimental results have verified the effectiveness of microjet-tesla MCs. Compared to remote cooling, a significant reduction in maximum junction temperature (<inline-formula> <tex-math>${T}_{text {j,max}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math>$79.7~^{circ }$ </tex-math></inline-formula>C was achieved, representing a 30.5% decrease. The total thermal resistance (<inline-formula> <tex-math>${R}_{text {th}}$ </tex-math></inline-formula>) decreased from 12.96 to 7.96 K/W, corresponding to a 38.6% reduction. As a result, the saturation drain current increased from 3.47 to 4.22 A, indicating a significant improvement of 21.6%. In addition, microjet-tesla MCs yielded a further reduction in <inline-formula> <tex-math>${T}_{text {j,max}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${R}_{text {th}}$ </tex-math></inline-formula> by up to 8.8% and 9.5%, respectively, even compared with plain-wall MCs. Meanwhile, a pumping power of only 3.92 mW is sufficient to significantly improve output characteristics of GaN HEMTs. This dual-cooling design offers a promising approach for thermal management of wide-bandgap semiconductors like GaN.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5680-5687"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148902870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}