IEEE Transactions on Electron Devices最新文献

{"title":"Achieving Forming-Free NbOx Mott Memristors With High Performance Through Lithium Intercalation","authors":"Yihao Wang;Guohe Zhang;Chenrong Gong;Shujing Zhao;Yubin Yuan;Shiquan Fan;Juan Hu;Xin Li;Weihua Liu;Li Geng;Chuan Yu Han","doi":"10.1109/TED.2025.3574134","DOIUrl":"https://doi.org/10.1109/TED.2025.3574134","url":null,"abstract":"In recent years, niobium oxide (NbOx)-based Mott memristors have attracted considerable attention due to their promising applications in neuromorphic computing. However, the relatively high voltages required for the electroforming process pose a significant challenge to their large-scale integration. To address this issue, in this work, a thin layer of lithium titanate (Li4Ti5O12, LTO) is introduced to intercalate lithium ions into the NbOx switching layer within a device structured as Pt/LTO/Nb/NbOx/W/Ti, successfully achieving a forming-free NbOx Mott memristor. This modification not only enables the forming-free operation but also results in a marked reduction in the threshold current, lowering it to <inline-formula> <tex-math>$19~mu $ </tex-math></inline-formula>A, a significant improvement compared to <inline-formula> <tex-math>$gt 100~mu $ </tex-math></inline-formula>A observed in the control sample without the intercalated layer, thereby substantially reducing energy consumption. Moreover, the composition and migration of Li+ ions are elucidated through electron energy loss spectroscopy (EELS). Finally, to demonstrate the practical application of these forming-free memristors, an oscillation circuit is constructed to demonstrate its potential application in artificial neurons.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 7","pages":"3605-3610"},"PeriodicalIF":2.9,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144472447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Critical Role of Passivation Layer and Semiconductor Interface on the Hydrogen Stability of ALD IGZO Transistors","authors":"Zhiyu Lin;Lu Kang;Jinxiu Zhao;Chen Wang;Peiyan Hong;Kai Jiang;Shiheng Lu;Ziheng Wang;Heng Wang;Xiuyan Li;Xuefei Li;Ying Wu;Jeffrey Xu;Mengwei Si","doi":"10.1109/TED.2025.3575400","DOIUrl":"https://doi.org/10.1109/TED.2025.3575400","url":null,"abstract":"In this work, we investigate the physical origin of hydrogen (H) stability at high temperature of atomic-layer-deposited (ALD) indium-gallium-zinc oxide (IGZO) transistors with different passivation stacks. The hydrogen stability of ALD IGZO transistors is found to be determined by the interfacial oxygen vacancy (<inline-formula> <tex-math>${V}_{text {O}}$ </tex-math></inline-formula>) generation due to the broken of In-O bonds during passivation layer growth and the formation of substitutional H in <inline-formula> <tex-math>${V}_{text {O}}$ </tex-math></inline-formula> (HO) during high-temperature annealing in H-rich environment. Device fabrication process is optimized including silicon dioxide (SiO2) passivation growth with O-rich process and post-annealing engineering. As a result, we demonstrate ALD IGZO transistors with passivation achieving a <inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula> change of 9 mV after forming gas annealing (FGA, 4% H2/96% N2) at <inline-formula> <tex-math>$400~^{circ }$ </tex-math></inline-formula>C. Meanwhile, we also demonstrate ALD IGZO transistors without passivation achieving a <inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula> change of 0.13 V after FGA at <inline-formula> <tex-math>$450~^{circ }$ </tex-math></inline-formula>C. Our work suggests suppressing <inline-formula> <tex-math>${V}_{text {O}}$ </tex-math></inline-formula> generation is critical to enhance the H stability of ALD IGZO transistors.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4138-4142"},"PeriodicalIF":2.9,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multiphysics-Coupled Ionic Migrations in Understanding Resistive Switching of Oxygen Vacancy-Based Resistive Random Access Memory (RRAM)","authors":"Yang Li;Wei Wang;Wenfeng Jiang;Jiawei Wang;Lingfei Wang;Di Geng;Ling Li","doi":"10.1109/TED.2025.3573269","DOIUrl":"https://doi.org/10.1109/TED.2025.3573269","url":null,"abstract":"The ionic transportation process is the main driving mechanism in novel microelectronic devices, such as resistive random access memories (RRAMs) and ionic-gated transistors. Understanding the ionic migration under multiple coupled physical fields provides valuable information and guidelines for device design and optimization. The oxygen vacancies transportation processes include drift under an electric field, Fick diffusion under a concentration gradient, and Soret diffusion or thermophoresis under a temperature gradient, where the last effect is often neglected. The working mechanism of RRAM devices depends on the conductive filament formation and rupture inside the resistive switching (RS) layer. The reliability and uniformity issues of RRAM devices come from the complex ionic transportation in amorphous materials under multiple coupled physical fields. In this work, we propose a technology computer-aided design (TCAD) model for RRAM devices that includes the full ionic transport mechanisms as well as takes the ionic generation and recombination processes into consideration. Based on this model, we investigated the effect of different parameters on device behavior.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 7","pages":"3587-3592"},"PeriodicalIF":2.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144472520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Configurable Neuronal Tuning Curves in NbOx Mott Memristors","authors":"Guolei Liu;Fanfan Li;Rui Wang;Yitong Chen;Huihui Ren;Dingwei Li;Yan Wang;Yingjie Tang;Jiayi Mao;Guanlei Zhao;Kaixin Ge;Zhongfang Zhang;Hong Wang;Bowen Zhu","doi":"10.1109/TED.2025.3576806","DOIUrl":"https://doi.org/10.1109/TED.2025.3576806","url":null,"abstract":"Neuronal tuning curves are the important characteristics of sensory neurons for encoding stimulus variables. However, it is challenging to achieve configurable neuronal tuning curves with nanoscale neuron devices. In this brief, we successfully demonstrate biomimetic neuronal tuning curves with NbOx Mott memristor by virtue of its electrically configurable spiking behaviors. The NbOx Mott neuron not only realizes probabilistic spiking but also exhibits configurable Gaussian spiking distribution. This enables the emulation of the key features of biological tuning curves, feasible for hardware implementation of artificial sensory neural network with high biological fidelity.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4585-4589"},"PeriodicalIF":2.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation and Experimental Investigation on W-Band Back-to-Back Longitudinal Serpentine Groove Slow Wave Structures","authors":"Huanyu Wang;Zhanliang Wang;Xing Liu;Jingrui Duan;Yuan Zheng;ZhiGang Lu;Shaomeng Wang;Yubin Gong","doi":"10.1109/TED.2025.3572878","DOIUrl":"https://doi.org/10.1109/TED.2025.3572878","url":null,"abstract":"Based on the traditional serpentine groove waveguide (SGW) slow wave structure (SWS), a novel back-to-back SGW (BTBSGW) is proposed in this article. The BTBSGW maintains the operational mode characteristics of conventional SGW while implementing dual-symmetric SGW that shares a common sheet beam, achieving two key improvements: 1) expanding the beam configuration and 2) simplifying the gun design. Through comprehensive high-frequency analysis, the dispersion characteristics, electric field distribution, coupling impedance, and transmission characteristics of the BTBSGW were investigated. Particle-in-cell (PIC) simulations were further conducted to evaluate the stability, saturation power, gain characteristics, and electronic efficiency of the BTBSGW traveling wave tube (TWT). Specifically, the BTBSGW-TWT is expected to achieve a gain exceeding 20 dB across the 86.5–92-GHz frequency band under fixed electron beam conditions (18.8 kV, 0.27 A). Peak performance occurs at 90 GHz, achieving a conversion efficiency of 5.97% and an output power of 302.06 W. To validate the design, the BTBSGW was fabricated using nano-computer numerical control (CNC) processing technology and the cold-test experiment was carried out. The experimental transmission characteristics exhibited a high degree of agreement with the simulation results. Overall, the BTBSGW-TWT demonstrates promising potential for applications in high-speed communication systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 7","pages":"3875-3880"},"PeriodicalIF":2.9,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144472574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First Demonstration of CuCrO2/β-Ga2O3 p-n Heterojunction Diode With High Breakdown Voltage and Low Leakage Current","authors":"Ying Li;Jialong Lin;Chengyi Tian;Xinwei Wang;Shubo Wei;Guoliang Zhang;Feng Zhang;Weifeng Yang","doi":"10.1109/TED.2025.3575742","DOIUrl":"https://doi.org/10.1109/TED.2025.3575742","url":null,"abstract":"We demonstrate for the first time a high-performance CuCrO2/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-gallium oxide (<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3) p-n heterojunction diode (HJD) with high breakdown voltage and low leakage current. Without any composite termination structure, the CuCrO2/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 HJD reached a high breakdown voltage of 1.46 kV with low leakage current of <inline-formula> <tex-math>$10~mu $ </tex-math></inline-formula>A/cm2, which is almost four times improvement over the traditional <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 Schottky barrier diodes (SBDs). Simultaneously, the HJD exhibited a turn-on voltage of 1.62 V and a relatively low specific on-resistance of 5.36 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2, yielding a power figure of merit (PFOM) of 0.4 GW/cm2. The measurements of temperature-dependent current density-voltage (J–V) showed that the HJD exhibited good thermal reliability and carrier transport got increasingly dominated by interface recombination at higher temperatures. Furthermore, a type-II band alignment was identified in the CuCrO2/ <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 heterojunction with a valence band offset of 2.22 eV and a conduction band offset of 0.45 eV, respectively, as determined by the X-ray photoelectron spectroscopy (XPS) characterizations. Technology computer aided design (TCAD) simulations indicated that the depletion region primarily extended into the Ga2O3 epitaxial region due to the full depletion of the p-CuCrO2 layer, which contributes to a more uniform distribution of electric field and higher breakdown voltages. Evidently, these results indicate that the formation of heterojunction by introducing a p-CuCrO2 layer is feasible and effective for achieving high-performance and improving manufacturing of <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 bipolar power diodes.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4005-4010"},"PeriodicalIF":2.9,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Scaling EMIB—A Comprehensive Architecture Portfolio for Localized Interconnects","authors":"Ravi Mahajan;Rahul Manepalli;Kemal Aygün;Kaladhar Radhakrishnan;Sujit Sharan","doi":"10.1109/TED.2025.3574287","DOIUrl":"https://doi.org/10.1109/TED.2025.3574287","url":null,"abstract":"Embedded multi-die interconnect bridge (EMIB) is a significant packaging technology platform currently in high-volume production, offering high-density, and localized in-package interconnects for the heterogeneous integration (HI) of chips. We describe initial success in expanding the EMIB technology envelope along four vectors i.e., pitch and wire scaling, addition of through silicon vias (TSVs) in the bridge, demonstration of an open cavity architecture, and the integration of active bridge die. All four technology vectors result in significant improvements in the HI envelope and will lead to significantly improved HI products.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 7","pages":"3911-3914"},"PeriodicalIF":2.9,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144481916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In-Sensor Computing With 2-D Semiconductor Optoelectronics: A Review","authors":"Zifeng Mai;Kaiyao Xin;Penghong Ci;Zhongming Wei","doi":"10.1109/TED.2025.3575739","DOIUrl":"https://doi.org/10.1109/TED.2025.3575739","url":null,"abstract":"Traditional computing systems based on the von Neumann architecture face inherent limitations due to the physical separation of sensing, computing, and storage functions, resulting in high data transmission latency and energy consumption. In-sensor computing devices address these challenges by integrating sensing and computing functionalities within a single unit, enabling efficient data processing. Two-dimensional semiconductors, with their atomic-scale thickness, tunable band structure, and exceptional optoelectronic properties, have emerged as promising building blocks for next-generation in-sensor computing devices. While previous reviews have explored various aspects of 2-D semiconductor-based in-sensor computing, the interplay between the intrinsic properties of 2-D semiconductors, their device-level operating mechanisms, and practical applications remain underexplored in an integrated manner. This review presents a comprehensive analysis that brings these interconnected elements together, offering a cohesive framework for the design and optimization of miniaturized, high-performance, and energy-efficient devices. We highlight advancements in 2-D semiconductor-based in-sensor computing devices, focusing on material diversity, tunable photoresponsivity, device architectures, and operational mechanisms. In addition, we examine their promising applications in artificial vision and optoelectronic communication. Finally, we discuss existing challenges and outline strategic directions to unlock the transformative applications of 2-D semiconductor-based optoelectronic devices in intelligent systems and beyond.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"3934-3945"},"PeriodicalIF":2.9,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144704987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Basic Properties of Gyrotrons Based on the Use of Planar Photonic-Structure Cavities","authors":"Ekaterina M. Novak;Andrei V. Savilov;Houxiu Xiao","doi":"10.1109/TED.2025.3575547","DOIUrl":"https://doi.org/10.1109/TED.2025.3575547","url":null,"abstract":"The implementation of subterahertz gyrotrons operating at high cyclotron harmonics inevitably involves the use of oversized operating cavities having dense mode spectra. This leads to a problem of the mode selectivity; namely, parasitic waves excited at lower cyclotron harmonics should be suppressed. In this article, we develop an approach based on the use of cavities with mode selection element and study a gyrotron cavity based on Bragg-type “photonic structures” formed by corrugated mirrors. Such a cavity should solve the problem of selectivity, as it supports high-Q quasi-critical modes only within a narrow frequency band of the Bragg resonance. The results of simulations and analytical estimations for Q-factors of these modes are presented in this article. Analytical estimations for starting currents of high-harmonic gyrotrons based on such “photonic-structure” cavities are expressed and discussed.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4400-4407"},"PeriodicalIF":2.9,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature Dependency of Non-Equilibrium Body Potential in SOI SBFETs","authors":"Tiexin Zhang;Fanyu Liu;Lei Shu;Siyuan Chen;Jiangjiang Li;Yuchong Wang;Yuchen Wu;Jing Wan;Yong Xu;Bo Li;Zhongying Xue;Zhengsheng Han;Tianchun Ye","doi":"10.1109/TED.2025.3575740","DOIUrl":"https://doi.org/10.1109/TED.2025.3575740","url":null,"abstract":"In this article, the impact of temperature on non-equilibrium body potential (NEBP) is studied in silicon-on-insulator Schottky-barrier field effect transistors (SOI SBFETs). Both experiments and simulations show that the rising rate and peak value of NEBP go down with temperature increase, which leads to an earlier falling edge. This phenomenon can be attributed to the increase of the Schottky diode current, resulting in the supplement of electrons in the top silicon layer and an earlier falling of NEBP is present. A modified analytical model of NEBP is adapted based on majority carrier redundancy, which is validated by technology computer aided design (TCAD) simulations.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 8","pages":"4491-4498"},"PeriodicalIF":2.9,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144705252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}