IEEE Transactions on Electron Devices最新文献

{"title":"Total-Ionizing Dose Effect in 3-D Charge-Trap nand Flash Memory Cells","authors":"Jounghun Park;Jungsik Kim;Vishwanath Shastry;Jeong-Soo Lee;Su-in Yi","doi":"10.1109/TED.2026.3700153","DOIUrl":"https://doi.org/10.1109/TED.2026.3700153","url":null,"abstract":"Total-ionizing dose (TID) effects on programmed cells in 3-D charge-trap <sc>nand</small> flash memory are investigated using technology-computer-aided design (TCAD) simulations calibrated to a commercial off-the-shelf (COTS) 176-layer 3-D <sc>nand</small> flash memory. During retention, the surrounding electric field (<inline-formula> <tex-math>$E$ </tex-math></inline-formula>-field) enhances electron–hole pair (EHP) generation and induces hole trapping in the charge-trap layer (CTL), resulting in a reduction in the threshold voltage (<inline-formula> <tex-math>${V}_{T}text {)}$ </tex-math></inline-formula>. The blocking oxide (BOX) is more strongly affected by radiation due to its larger volume compared to the bandgap engineered (BE)-tunneling oxide (TOX). <inline-formula> <tex-math>${V}_{T}$ </tex-math></inline-formula> degradation becomes more pronounced with increasing total dose, particularly at higher program verifying (PV) levels. Moreover, <inline-formula> <tex-math>${V}_{T}$ </tex-math></inline-formula> state reliability by TID becomes more vulnerable on continued scaling of the gate and spacer lengths, below the word line pitch of 54 nm. Furthermore, BOX thickness introduces a tradeoff between retention and TID-induced <inline-formula> <tex-math>${V}_{T}$ </tex-math></inline-formula> degradation, where a thinner BOX improves the radiation hardness with a cost of time-dependent retention loss.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4834-4840"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A C-Band Relativistic Magnetron With a Slotted Circular Waveguide Extraction Structure","authors":"Zijun Huang;Tingxu Chen;Yanlin Deng;Fan Zhang;Bo Zhao;Biao Hu;Haiyang Wang;Hao Li;Tianming Li","doi":"10.1109/TED.2026.3707139","DOIUrl":"https://doi.org/10.1109/TED.2026.3707139","url":null,"abstract":"As the overall design of the relativistic magnetron (RM) tends toward compactness, improving the power capacity is of great importance. This article proposes a novel all-cavity extraction <inline-formula> <tex-math>$C$ </tex-math></inline-formula>-band RM with a slotted circular waveguide extraction (SCWE) structure. While maintaining a compact external footprint, the proposed RM achieves a larger internal interaction space. This improves the power capacity and enhances the performance of the RM. In the experiment, under 380-kV voltage and 0.27 T, the output microwave power reaches 348 MW with a frequency of 5.66 GHz. Moreover, in repeated experiments, the RM outputs stable microwave signals with excellent performance. This study verifies the feasibility of the SCWE structure and provides a new approach for improving the power capacity of the RM.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5216-5221"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Candidate Overtone Shear Horizontal SAW Resonators in Thin-Film Lithium Niobate for Intermodal Acousto-Optic Modulation","authors":"Wenbing Jiang;Xuankai Xu;Yu Guo;Boyu Zhang;Lihui Jin;Xiao Chen;Tao Wu;Libing Zhou","doi":"10.1109/TED.2026.3705013","DOIUrl":"https://doi.org/10.1109/TED.2026.3705013","url":null,"abstract":"The merits of thin-film surface acoustic wave (SAW) devices are pivotal to developing high-performance intermodal acousto-optic modulators. In this work, we have proposed shear-horizontal (SH) SAW resonators for anticipated intermodal acousto-optic modulation (AOM) on the thin-film lithium niobate (LN) platform. Through optimization of the cut angle of LN films, the SAW wavelength, and the thickness of interdigital transducer (IDT) electrodes, the calculated acousto-optic overlap factors utilizing SH0 modes are improved by more than an order of magnitude compared with those of Rayleigh modes. Furthermore, we have fabricated and characterized three kinds of proof-of-principle SH0 mode devices without/with grating reflectors (GRs). The electromechanical coupling coefficients (<inline-formula> <tex-math>$textit {k}_{substack {text {eff}}}^{substack {{2}}}$ </tex-math></inline-formula>) and quality factors (<inline-formula> <tex-math>$Q$ </tex-math></inline-formula>) in the overtone resonators with GRs are systematically evaluated, featuring the highest <inline-formula> <tex-math>$Q$ </tex-math></inline-formula> of 843 with the compromised <inline-formula> <tex-math>$textit {k}_{substack {text {eff}}}^{substack {{2}}}$ </tex-math></inline-formula> of 0.96%–4.72%. The results reveal that the temperature coefficients of frequency (TCF) of Rayleigh modes vary across various overtones, whereas the SH0 modes exhibit TCFs in the range of 32.3–68.9 ppm/°C. Our fabricated SH0-mode overtone resonators demonstrate the capability of operating at power levels up to 29 dBm without electrode damage, offering a promising paradigm for robust and high-efficiency intermodal acousto-optic modulators with potential applications in integrated optical signal processing, microwave photonics, and quantum information technologies.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4941-4950"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Understanding Field-Cycling-Dependent Evolution of Polarization Dynamics in Nonvolatile Anti-Ferroelectric HfxZr1–xO2 Capacitors","authors":"Ziyuan Chen;Lijian Chen;Junliang Zhou;Zeping Weng;Daolin Cai;Yi Zhao","doi":"10.1109/TED.2026.3708108","DOIUrl":"https://doi.org/10.1109/TED.2026.3708108","url":null,"abstract":"In this work, the polarization dynamics of nonvolatile anti-ferroelectric (AFE) Hf_xZr_1–xO₂ (HZO) capacitor under cycling stress were investigated. The nucleation-limited switching (NLS) model reveals that the field-cycling-induced modification of nucleation activation energy results in a reduction in positive and an increase in negative average switching time. Concurrently, the switching in both directions is observed to become more uniform. Based on the comparison with the volatile AFE HZO capacitor and experiments under varying cycling conditions, it is suggested that the cycling stress in the nonvolatile AFE HZO capacitor could promote charge injection. Consequently, the built-in electric field could drive these injected charges into the HZO film, leading to a depinning effect. The results in this study could lay the foundation for the application of nonvolatile AFE HZO memories.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4899-4905"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analytical Tools for Device Reliability and Characterization: Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance","authors":"P. M. Lenahan","doi":"10.1109/TED.2026.3662667","DOIUrl":"https://doi.org/10.1109/TED.2026.3662667","url":null,"abstract":"There is a significant, though often incomplete empirical understanding of many semiconductor device reliability problems. Some examples in MOS technology are the many sophisticated and insightful studies on time-dependent dielectric breakdown (TDDB), the negative bias temperature instability, hot carrier instabilities, and radiation damage. Various approaches have been developed to deal with these reliability problems, and, of course, these approaches have been widely and successfully utilized. However, the experimental aspects of most investigations of these reliability issues involve only purely electrical measurements, from which a fundamental physical and chemical understanding of the underlying physical phenomena may only be inferred with great difficulty. A fundamental physical and chemical understanding of many of these issues can be developed through several electron spin-based techniques. This report provides a brief introduction to the theoretical background and experimental techniques specifically useful for the applications of these techniques in device reliability studies, as well as several examples of their application to important reliability issues.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4551-4557"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Hole Accumulation Effect in P-GaN HEMTs With Al(Ga)N Gate-Insertion-Layer Under Heavy Ions Irradiation","authors":"Jianggen Zhu;Fukang Yang;Shuting Huang;Xin Zhou;Huan Gao;Keping Wu;David Zhou;Bo Zhang;Qi Zhou","doi":"10.1109/TED.2026.3701684","DOIUrl":"https://doi.org/10.1109/TED.2026.3701684","url":null,"abstract":"In this work, the mechanism of single-event effects (SEEs) in a 100-V p-GaN gate high electron mobility transistor (HEMT) featuring an Al(Ga)N gate-insertion-layer (GIL) in the p-GaN gate is investigated. The irradiation experiments were conducted using Kr ions with a linear energy transfer (LET) of 37.9 MeV <inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{{2}} cdot $ </tex-math></inline-formula> mg<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>. Distinct single-event burnout (SEB) phenomena were observed under zero- and negative-gate bias conditions. The device under zero bias exhibits recoverable behavior after an SEB-like event, while permanent failure occurs under negative gate bias, yet the SEB threshold is higher. Enhanced hole accumulation in the p-GaN region induced by the GIL is found to be responsible for triggering the premature SEB. TCAD simulations reveal that at a critical drain voltage, this enhanced hole accumulation effect eliminates the channel barrier and induces the subsequent leakage current increase, enabling channel conduction and triggering SEB during irradiation. Under prolonged irradiation at a drain bias below the SEB voltage, the initial rise in the average drain current further indicates continuous hole accumulation. Postirradiation degradation is manifested as a negative threshold voltage shift of 0.21 V and a source–drain leakage increase by two orders of magnitude, associated with irradiation-induced damage in the p-GaN gate. These results indicate that the detailed gate epistructure is sensitive to SEEs, which should be delicately designed in the p-GaN HEMT for space applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4665-4672"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"P-Channel GaN FETs on Low-Doped Layers Enabled by Thermal Mg-Diffusion Process: Demonstration and Characterization","authors":"Manuel Fregolent;Biplab Sarkar;Shun Lu;Jia Wang;Hirotaka Watanabe;Kwon Woong;Carlo De Santi;Gaudenzio Meneghesso;Enrico Zanoni;Yoshio Honda;Hiroshi Amano;Matteo Meneghini","doi":"10.1109/TED.2026.3707083","DOIUrl":"https://doi.org/10.1109/TED.2026.3707083","url":null,"abstract":"This work reports on the development of GaN-based p-channel FETs on low-doped (~<inline-formula> <tex-math>${{10}}^{{17}}text {c}text {m}^{-{3}}text {)}$ </tex-math></inline-formula> p-GaN layers by exploiting enhanced ohmic contacts obtained with a post-growth thermal Mg-diffusion process. Two architectures were tested, namely 1) MESFETs and 2) MOSFETs. The presence of improved ohmic contacts on very low-doped layers reflects in highly ideal DC characteristics, showing an I<inline-formula> <tex-math>${}_{mathrm {ON}}$ </tex-math></inline-formula>/I<inline-formula> <tex-math>${}_{mathrm {OFF}} gt 10^{{6}}$ </tex-math></inline-formula>, excellent ohmic behavior, and ideal transfer characteristics. Temperature dependence of <inline-formula> <tex-math>$I_{text {D}}$ </tex-math></inline-formula>–<inline-formula> <tex-math>$V_{text {G}}$ </tex-math></inline-formula> characteristics showed highly stable <inline-formula> <tex-math>$V_{text {TH}}$ </tex-math></inline-formula>, while the <inline-formula> <tex-math>$I_{mathrm {ON}}$ </tex-math></inline-formula> is affected by the activation of the Mg dopants. Finally, a model for channel mobility was developed, resulting in an effective hole mobility of ~0.6 cm<inline-formula> <tex-math>${}^{{2}} cdot $ </tex-math></inline-formula>V<inline-formula> <tex-math>${}^{-{1}} cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>. The results prove that the Mg-diffusion-enhanced ohmic contacts are extremely effective in enabling future p-channel GaN devices for fully GaN CMOS devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5167-5172"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11616627","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compact Model for Accurate Decoupling of Interface and Buffer Traps in HEMTs","authors":"Fanyuan Zhang;Xu Hou;Aoran Fan;Juan Xue;Fengyi Li;Weigang Ma;Xing Zhang","doi":"10.1109/TED.2026.3707131","DOIUrl":"https://doi.org/10.1109/TED.2026.3707131","url":null,"abstract":"This work proposes a physics-based compact modeling framework for the frequency dispersion of gate capacitance in AlGaN/gallium nitride (GaN) high-electron-mobility transistors (HEMTs), enabling capacitance–voltage (C–V) decoupling and an accurate analysis of interface and buffer traps. An improved buffer trap charge model is developed by partitioning the buffer layer into a near-interface region, described by a triangular potential well, and a far region, treated via the integration of Poisson’s equation and Gauss’s law. Incorporating this static charge model with Shockley-Read-Hall (SRH) statistics and the Lehovec admittance formalism, a unified capacitance dispersion framework is established by decomposing the intrinsic gate capacitance into barrier, 2DEG, and trap components, with distinct time constants derived for buffer and interface traps. Validated against TCAD simulations and experimental measurements across a wide range of frequencies and gate biases, the model achieves excellent agreement (4.59% versus TCAD and 1.66% versus measurements). This model provides a clear physical picture for trap characterization while remaining structurally compatible with circuit-level implementation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4717-4723"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Threshold Voltage E-Mode MIS-HEMTs on 6-in GaN-on-Si: Fully Recessed Gate With N2/O2 Plasma Treatment","authors":"Qingyuan Zuo;Xin Xia;Huolin Huang;Yun Lei;Jianxun Dai;Wei Li;Yanliang Qiu;Xinyang Wang;Kainan Wang;Kaiming Ma;Yung C. Liang","doi":"10.1109/TED.2026.3705020","DOIUrl":"https://doi.org/10.1109/TED.2026.3705020","url":null,"abstract":"To enhance the performance of enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors with a fully etched gate barrier, this work comparatively investigates various plasma treatment schemes. The complete etching of the AlGaN barrier exposes the underlying GaN channel, making device performance highly dependent on interface quality, and thus necessitating a low-damage plasma treatment. Conventional N- or F- based plasmas induce additional interface damage, whereas the proposed N₂/O₂ mixed plasma treatment effectively mitigates plasma-induced defects, leading to surface states suppression and dielectric/semiconductor interface quality enhancement. After annealing, the surface roughness approaches that of the as-grown epitaxial wafer. Comprehensive characterizations of untreated, N₂/O₂, and O₂ treated devices reveal that the N₂/O₂ plasma treatment yields superior performance metrics, including reduced <sc>on</small>-resistance, enhanced gate controllability, and elevated breakdown voltage (BV), alongside minimized threshold voltage shift and suppressed dynamic <sc>on</small>-resistance degradation, thus significantly improving device reliability. Particularly, the <sc>off</small>-state drain–source BV was enhanced from 1003 to 1428 V, confirming the N₂/O₂ mixed plasma treatment as a highly promising strategy for performance optimization.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4700-4707"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation Detection Performance of Gamma Rays From Melt- and Solution-Grown Inorganic Perovskite CsPbBr3 Semiconductor Detectors","authors":"Bao Xiao;Yuquan Wang;Haoming Qin;Wenjie Chen;Xuchang He;Jun Du;Nannan Shen;Qihao Sun;Yihui He","doi":"10.1109/TED.2026.3695836","DOIUrl":"https://doi.org/10.1109/TED.2026.3695836","url":null,"abstract":"Perovskite CsPbBr₃ has emerged as a promising room-temperature semiconductor radiation detector, synthesizable via both melt- and solution-growth methods. Herein, we systematically compare the <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray detection performance of CsPbBr₃ crystals grown by inverse temperature crystallization (ITC) and vertical Bridgman (VB) method. ITC-grown crystals exhibit relatively low optical transmittance of ~65%, a short photoluminescence (PL) lifetime of ~6.07 ns, moderate resistivity of <inline-formula> <tex-math>$6.06times 10^{{9}}~Omega {cdot }text {cm}$ </tex-math></inline-formula>, and a limited <sc>on–off</small> ratio of ~350. In contrast, VB-grown crystals show markedly improved optoelectronic properties, including higher transmittance (75%~80%), a much longer PL lifetime (~36.75 ns), higher resistivity (<inline-formula> <tex-math>$1.08times 10^{{10}}~Omega {cdot }text {cm}$ </tex-math></inline-formula>), and a significantly enhanced <sc>on–off</small> ratio (~5300). These improvements indicate higher crystal quality and reduced defect density in VB-grown CsPbBr₃ crystals, leading to more efficient charge transport. Notably, the average hole mobility and mobility-lifetime product increase from 5.36 cm<inline-formula> <tex-math>${}^{{2}}{cdot }text {V}^{-{1}}{cdot }text {s}^{-{1}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$4.45times 10^{-{4}}~text {cm}^{{2}}{cdot }text {V}^{-{1}}$ </tex-math></inline-formula> to 24.87 cm<inline-formula> <tex-math>${}^{{2}}{cdot }text {V}^{-{1}}{cdot }text {s}^{-{1}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$3.58times 10^{-{3}}~text {cm}^{2}{cdot }text {V}^{-{1}}$ </tex-math></inline-formula>, respectively. Accordingly, asymmetric Au/CsPbBr₃/EGaIn detectors fabricated from VB-grown crystals deliver excellent average energy resolutions (ERs) of ~9.8% and ~5.5% for ²⁴¹Am and ⁵⁷Co <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray sources, respectively, along with superior detector uniformity, whereas ITC-based detectors exhibit only moderate ERs of ~29.6% and ~22.6%. These results suggest that melt-grown CsPbBr₃ crystals are more favorable for high-performance <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray detectors applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4986-4992"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}