IEEE Transactions on Electron Devices最新文献_第10页

Three-Dimensional Restricted C/C–Sb₂Te Heterostructure for Phase-Change Memory Applications

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-15 DOI: 10.1109/TED.2025.3526100

Chentao Zou;Liangcai Wu;Yanping Sui;Zhitang Song;Sannian Song

引用次数: 0

Examination of Temperature-Dependent Polarization Switching Characteristics in Ferroelectric Ga-Doped HfO₂ Thin Films

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-15 DOI: 10.1109/TED.2024.3521920

Yu-Chun Li;Xiao-Xi Li;Zi-Ying Huang;Ming Li;Ru Huang;David Wei Zhang;Hong-Liang Lu

{"title":"Examination of Temperature-Dependent Polarization Switching Characteristics in Ferroelectric Ga-Doped HfO₂ Thin Films","authors":"Yu-Chun Li;Xiao-Xi Li;Zi-Ying Huang;Ming Li;Ru Huang;David Wei Zhang;Hong-Liang Lu","doi":"10.1109/TED.2024.3521920","DOIUrl":"https://doi.org/10.1109/TED.2024.3521920","url":null,"abstract":"The ferroelectric properties, polarization switching kinetics, and endurance characteristics of Ga-doped HfO2(Ga-HfO2) capacitors have been systematically investigated across a temperature range of 300–473 K. The results reveal a strong temperature dependence: remanent polarization (<inline-formula> <tex-math>${P}_{text {r}}$ </tex-math></inline-formula>) increases, coercive voltage decreases, the imprint effect intensifies, polarization switching slows, and endurance degrades with rising temperature. Notably, the Ga-HfO2 device still maintains stable ferroelectricity at 473 K, with a <inline-formula> <tex-math>$2{P}_{text {r}}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$44~mu $ </tex-math></inline-formula>C/cm2. Besides, over 80% polarization reversal can be achieved with 3.2-V/500-ns excitation for <inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m2 Ga-HfO2 devices. Moreover, the endurance properties of Ga-HfO2 devices surpass 2x<inline-formula> <tex-math>${10}^{{5}}$ </tex-math></inline-formula> cycles at 3.0 V/100 kHz, outperforming those of Zr-doped counterparts at 473 K. The study suggests that defect behaviors primarily drive the temperature dependence in HfO2 devices, providing valuable insights for reliable ferroelectric memory.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"807-812"},"PeriodicalIF":2.9,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-15 DOI: 10.1109/TED.2025.3526113

Ashkhen Yesayan;Aleksandr Grabski;Farzan Jazaeri;Jean-Michel Sallese

引用次数: 0

GaN Monolithic Optopairs for Rapid and High-Resolution Temperature Measurements

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-13 DOI: 10.1109/TED.2025.3525597

Hongying Yang;Yumeng Luo;Kwai Hei Li

引用次数: 0

Vertical Organic Synaptic Transistor Based on Electrolyte Gate Dielectric for Emulating Short-Term Synaptic Plasticity and Pain Perception

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-13 DOI: 10.1109/TED.2025.3526743

Yujiao Li;Gang He;Qian Gao;Can Fu;Qingxuan Li;Shanshan Jiang;Huanhuan Wei

{"title":"Vertical Organic Synaptic Transistor Based on Electrolyte Gate Dielectric for Emulating Short-Term Synaptic Plasticity and Pain Perception","authors":"Yujiao Li;Gang He;Qian Gao;Can Fu;Qingxuan Li;Shanshan Jiang;Huanhuan Wei","doi":"10.1109/TED.2025.3526743","DOIUrl":"https://doi.org/10.1109/TED.2025.3526743","url":null,"abstract":"Inspired by biological neuromorphological systems, organic synaptic transistors (OSTs) have attracted wide attention due to their potential applications in the development of artificial intelligence. At present, the planar OSTs face great challenges in achieving low power consumption and short channel effect, while the vertical OSTs can simulate synaptic characteristics at low voltage owing to its short channel length and unique working principle. Here, we smoothly fabricated vertical structure transistors based on polyvinyl alcohol (PVA) gate dielectrics for the first time by solution method and achieved excellent electrical properties when the gate voltage was only −5 V. Subsequently, the conductivity and carrier transmission efficiency of the device were effectively improved by organic lithium salt-doped PVA gate dielectric, on the basis of which a neural morphological device based on vertical structure was constructed perfectly. By using the electric-double-layer (EDL) capacitance effect and electrochemical doping, the device can achieve low-voltage operation and typical synaptic functions successfully, including excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), long-term potentiation (LTP), and memory refresh. Moreover, the implemented PPF can be extended to simulate pain perception and sensitization. This work shows the great potential of PVA-gated OST based on vertical structure in neuromorphologic applications, facilitating the development of emerging neural morphological systems as well as future artificial neural networks.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1301-1307"},"PeriodicalIF":2.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-Band Terahertz Harmonic Gyrotron Driven by Axis-Encircling Electron Beam

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-13 DOI: 10.1109/TED.2025.3525605

Feng Zhang;Jia-Ji Feng;Xin-Yin Cao;Tien-Fu Yang;Yu-Shan Cho;Ji-Tao Yang;Yue-Yi Zhang;Tsun-Hsu Chang;Chao-Hai Du

{"title":"Dual-Band Terahertz Harmonic Gyrotron Driven by Axis-Encircling Electron Beam","authors":"Feng Zhang;Jia-Ji Feng;Xin-Yin Cao;Tien-Fu Yang;Yu-Shan Cho;Ji-Tao Yang;Yue-Yi Zhang;Tsun-Hsu Chang;Chao-Hai Du","doi":"10.1109/TED.2025.3525605","DOIUrl":"https://doi.org/10.1109/TED.2025.3525605","url":null,"abstract":"Gyrotron driven by the axis-encircling electron beam is a pathway for generating frequency-tunable terahertz radiation on multiple harmonics. In this article, a large-orbit gyrotron (LOG) is designed, manufactured, and experimentally investigated. A magnetic cusp gun (MCG), demonstrating high robustness over a broad range of magnetic fields, has been developed to generate an axis-encircling electron beam with a constant pitch factor of 1.5 and a velocity spread of less than 2%. As the magnetic field strength adjusted at the operating voltage/current of 45 kV/0.7 A, the gyrotron is demonstrated to stably operate at the fundamental harmonic TE12 mode and the second harmonic TE24 mode, at the respective dual bands. The fundamental harmonic oscillation can achieve a wideband continuous frequency tuning range of 5.27 GHz around 160 GHz, with a maximum power of 7.42 kW, corresponding to a working efficiency of 23.5%, and the second harmonic operation can obtain a maximum power of 2.9 kW and an efficiency of 9.2%, with a continuous frequency tuning range of 1 GHz near 391 GHz. The quantitative agreement between experimental results and theoretical calculations indicates the reliability and correctness of the implemented gyrotron system, promising in achieving multiband oscillations at various cyclotron harmonics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1390-1395"},"PeriodicalIF":2.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fast Electron Gun Design Methodology Based on Fitting the Beam-Edge Potential Profiles

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-10 DOI: 10.1109/TED.2025.3526122

C. Zhang;Jinchi Cai;P. C. Yin;Z. X. Su;X. K. Zhang;L. Zeng;Z. Zhang;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei

{"title":"Fast Electron Gun Design Methodology Based on Fitting the Beam-Edge Potential Profiles","authors":"C. Zhang;Jinchi Cai;P. C. Yin;Z. X. Su;X. K. Zhang;L. Zeng;Z. Zhang;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei","doi":"10.1109/TED.2025.3526122","DOIUrl":"https://doi.org/10.1109/TED.2025.3526122","url":null,"abstract":"To shorten the design cycle of the 2-D axisymmetric electron gun, a new design methodology is reported in this article. Unlike the method of iterating the electron gun structure through particle simulations, for the primary beam optics design in the anode-cathode gap, this method mainly needs pure electrostatic simulations to achieve the target beam-edge potential profiles. Based on such an approach, the required electron gun structure, including the cathode, control electrode, and anode, can be quickly obtained. The subsequent particle simulations for handling higher order effects typically require minor geometry adjustments relative to the anode-cathode gap to complete the whole design. Following the proposed procedure, the results show that the target beam parameter with good trajectory laminarity would be obtained. The simulations on electron guns with three different configurations also reveal that any control electrode could achieve the same goal if it satisfies the target beam-edge potential profiles. Finally, the factors affecting the electron laminarity are discussed using one of the electron gun configurations. After that, a set of clear and complete primary beam optics design processes for the electron gun is summarized.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1404-1411"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Annealing Strategy Toward Achieving High-Performance Indium Tungsten Oxide Thin-Film Transistors by Equilibrating Oxygen Vacancy and Chemisorbed Oxygen

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-10 DOI: 10.1109/TED.2025.3525613

Zhiying Chen;Yan Yan;Guanglong Ding;Ye Zhou;Suting Han;Meng Zhang

{"title":"Annealing Strategy Toward Achieving High-Performance Indium Tungsten Oxide Thin-Film Transistors by Equilibrating Oxygen Vacancy and Chemisorbed Oxygen","authors":"Zhiying Chen;Yan Yan;Guanglong Ding;Ye Zhou;Suting Han;Meng Zhang","doi":"10.1109/TED.2025.3525613","DOIUrl":"https://doi.org/10.1109/TED.2025.3525613","url":null,"abstract":"High-performance thin-film transistors (TFTs) are crucial for advanced displays. The use of metal oxide (MO) as an excellent semiconductor to achieve high-mobility TFTs comes with certain challenges, such as a severely negative threshold voltage (<inline-formula> <tex-math>${V} _{th}$ </tex-math></inline-formula>) and instability. These issues are attributed to defects and impurities within MO thin films, specifically oxygen vacancies and chemisorbed oxygens. Addressing these challenges is essential, prompting a study on improved fabrication strategies. In this work, we investigated annealing strategies to enhance the performance of indium tungsten oxide (IWO) TFTs. A two-step annealing approach was proposed to balance the concentration of oxygen vacancies and chemisorbed oxygens. This method effectively boosted the field-effect mobility (<inline-formula> <tex-math>$mu _{FE}$ </tex-math></inline-formula>) of IWO TFTs to 58 cm2/Vs, concurrently achieving a small negative <inline-formula> <tex-math>${V} _{th}$ </tex-math></inline-formula> of −3.5 V and a favorable subthreshold swing (SS) of 0.35 V/dec. The proposed mechanism was validated through technology computer-aided design (TCAD) device simulation and low-frequency noise (LFN) analysis. The law of annealing IWO TFTs was analyzed based on the results obtained from postannealing experiments conducted at variable temperatures. The entirety of the experimental findings and conclusions is anticipated to provide valuable insights for the fabrication of high-mobility IWO TFTs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1167-1173"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling of Conduction Mechanism in Filament-Free Multilayer Bulk RRAM

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-10 DOI: 10.1109/TED.2024.3521953

Yucheng Zhou;Ashwani Kumar;Jaeseoung Park;Yuyi Zhang;Yue Zhou;Seonghyun Kim;Ertugrul Cubukcu;Duygu Kuzum

引用次数: 0

Effect of Carbon on the Formation of Cobalt Silicide and Thermal Stability for DRAM Application: A Comparative Study on PVD and CVD Methods

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-10 DOI: 10.1109/TED.2024.3523263

Yanping He;Shujuan Mao;Jing Xu;Xianglie Sun;Jianfeng Gao;Weibing Liu;Jinbiao Liu;Xu Chen;Junfeng Li;Xiaolei Wang;Guilei Wang;Chao Zhao;Jun Luo

{"title":"Effect of Carbon on the Formation of Cobalt Silicide and Thermal Stability for DRAM Application: A Comparative Study on PVD and CVD Methods","authors":"Yanping He;Shujuan Mao;Jing Xu;Xianglie Sun;Jianfeng Gao;Weibing Liu;Jinbiao Liu;Xu Chen;Junfeng Li;Xiaolei Wang;Guilei Wang;Chao Zhao;Jun Luo","doi":"10.1109/TED.2024.3523263","DOIUrl":"https://doi.org/10.1109/TED.2024.3523263","url":null,"abstract":"The improved thermal stability of cobalt silicide (CoSi2) becomes pivotal with the introduction of a 4F2 cell architecture, featuring a vertical pillar transistor for DRAM application. To tackle this challenge, carbon preamorphization implantation (C PAI) was employed. This study systematically investigates the effects of C PAI on both the formation and thermal stability of CoSi2, taking into account distinct cobalt deposition methods, namely, physical vapor deposition (PVD) and chemical vapor deposition (CVD). Results demonstrate that the presence of carbon delays the nucleation temperature of CoSi2 approximately 50 °C and significantly enhances the morphology and thermal stability of CoSi2 for PVD Co. These observed effects can be explained by the segregation of carbon atoms at the grain boundaries and CoSi2/Si interface. However, the introduction of carbon has a detrimental effect for CVD Co. The variations in results are attributed to variations in the deposition mechanism. This insight provides valuable considerations for optimizing the thermal stability of CoSi2s in the context of future DRAM devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"653-658"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0