IEEE Transactions on Electron Devices最新文献_第10页

An I-Beam Coupled Distributed Lamé-Mode Capacitive Resonator With Low Motional Impedance and High f × Q Product 一种具有低运动阻抗和高f × Q积的i束耦合分布lam<s:1>模电容谐振器

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-07-01 DOI: 10.1109/TED.2026.3705408

Hao Yu;Yechen Miao;Ke Sun;Fan Xu;Jun Wan;Fang Wang;Yi Sun;Yuqing Mao;Heng Yang;Xinxin Li

{"title":"An I-Beam Coupled Distributed Lamé-Mode Capacitive Resonator With Low Motional Impedance and High f × Q Product","authors":"Hao Yu;Yechen Miao;Ke Sun;Fan Xu;Jun Wan;Fang Wang;Yi Sun;Yuqing Mao;Heng Yang;Xinxin Li","doi":"10.1109/TED.2026.3705408","DOIUrl":"https://doi.org/10.1109/TED.2026.3705408","url":null,"abstract":"This work proposes a novel I-beam coupled distributed Lamé-mode resonator suitable for high-frequency timing reference applications, which simultaneously achieves a high quality factor (Q) and low motional impedance. The design couples the distributed Lamé-mode resonator with a length-extensional (LE) mode resonator to expand the transduction area for motional impedance reduction while also incorporating structural optimization to suppress energy dissipation of the resonator. Experimental results demonstrate that at a resonant frequency of 30.63 MHz, the resonator achieves an ultrahigh Q-factor of 633 575, yielding an f <inline-formula> <tex-math>$times $ </tex-math></inline-formula> Q product of <inline-formula> <tex-math>${1.94}~times ~{10}^{{13}}$ </tex-math></inline-formula> that approaches the theoretical limit of monocrystalline silicon. Furthermore, with a transduction gap of <inline-formula> <tex-math>$1.2~mu $ </tex-math></inline-formula>m, the resonator exhibits a low motional impedance of 38.83 k<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>. Theoretical predictions indicate that reducing the transduction gap to 200 nm can further decrease the motional impedance to below 1 k<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4930-4940"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vertical-Structure 2-D GaN/Si Dual-Band Photodetectors for Encrypted Communication 用于加密通信的垂直结构二维GaN/Si双波段光电探测器

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-24 DOI: 10.1109/TED.2026.3703003

Hongsheng Jiang;Yixun He;Quanguang Lai;Hongdi Xiang;Haiyan Wang;Wengliang Wang;Guoqiang Li

{"title":"Vertical-Structure 2-D GaN/Si Dual-Band Photodetectors for Encrypted Communication","authors":"Hongsheng Jiang;Yixun He;Quanguang Lai;Hongdi Xiang;Haiyan Wang;Wengliang Wang;Guoqiang Li","doi":"10.1109/TED.2026.3703003","DOIUrl":"https://doi.org/10.1109/TED.2026.3703003","url":null,"abstract":"Dual-band detection combining UVB and NIR channels offers distinct advantages for encrypted communication. Here, vertical 2-D GaN/Si dual-band photodetectors enabled by a two-step magnetron-sputtering and high-temperature ammonolysis synthesis have been reported. In the vertical device architecture, the built-in electric field at the 2-D GaN/Si interface enables self-powered operation and, together with an applied bias, promotes efficient separation of photogenerated carriers, thereby enhancing the device photoresponse. The device shows distinct spectral peaks at 308 and 900 nm, a fast temporal response (rise/fall <inline-formula> <tex-math>$approx ~4.1$ </tex-math></inline-formula>/2.3 ms), and wide linear dynamic ranges (LDRs). The peak responsivities reach 4.9 and 1.8 A<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>W<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula> with corresponding detectivities of <inline-formula> <tex-math>${3}.{0} times {10}^{{12}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${1}.{1} times {10}^{{12}}$ </tex-math></inline-formula> Jones. A proof-of-concept encrypted communication demonstration verifies robust, hard-to-decode reception by the devices. These results provide a practical route toward high-performance dual-band photodetectors for encrypted communication.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5048-5054"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electronic Frequency Tuning in the 330-GHz CW Clinotron Oscillator With Modified Cavity 改进腔体的330-GHz连续波回旋振荡器的电子频率调谐

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-30 DOI: 10.1109/TED.2026.3703002

O. Kuleshov;S. Steshenko;E. Khutoryan

引用次数: 0

Nonfilamentary Switching With Trap-Controlled Capacitive Charge Modulation in GaOx/HfOx Heterostructures on Flexible Substrate 柔性衬底上GaOx/HfOx异质结构的陷阱控制电容电荷调制非丝状开关

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-07-08 DOI: 10.1109/TED.2026.3708423

S. Azhar;I. Biswas;N. Paul;H. Finch;A. Mondal;M. K. Mondal;V. Dhanak;S. Chattopadhayay;R. Mahapatra

{"title":"Nonfilamentary Switching With Trap-Controlled Capacitive Charge Modulation in GaOx/HfOx Heterostructures on Flexible Substrate","authors":"S. Azhar;I. Biswas;N. Paul;H. Finch;A. Mondal;M. K. Mondal;V. Dhanak;S. Chattopadhayay;R. Mahapatra","doi":"10.1109/TED.2026.3708423","DOIUrl":"https://doi.org/10.1109/TED.2026.3708423","url":null,"abstract":"Here, we report sweep-rate driven, nonfilamentary switching in GaOx/HfOx bilayer heterostructures on flexible substrate, exhibiting memristive behavior with trap-controlled capacitive charge modulation. The devices exhibit smooth, clockwise, nonpinched butterfly-type <inline-formula> <tex-math>$I$ </tex-math></inline-formula>–<inline-formula> <tex-math>$V$ </tex-math></inline-formula> hysteresis with nanoampere-level current operation and clear device area scalability, signifying a spatially distributed transport mechanism. The presence of finite zero-bias current, pronounced sweep-rate dependence, and frequency-dependent capacitance–voltage characteristics reveal strong interfacial charge accumulation at the GaOx/HfOx interface. Temperature-dependent measurements combined with Poole–Frenkel (PF) analysis in both resistance states indicate thermally activated, field-assisted emission from oxygen-vacancy-related trap states as the dominant conduction mechanism. The coupling between trap-mediated transport and interfacial charge accumulation enables gradual and reversible conductance modulation without filament formation, suppressing localized Joule heating and enhancing cycle-to-cycle uniformity. Stable analog programmability under pulse training and endurance over <inline-formula> <tex-math>$10^{mathbf {{3}}}$ </tex-math></inline-formula> cycles demonstrates the robustness of the distributed switching pathway. This work establishes a trap-controlled, interfacial charge-driven switching mechanism in flexible GaOx/HfOx heterostructures, enabling nonfilamentary operation with capacitive-assisted conductance modulation and highlighting its potential for low-power, flexible analog in-memory and neuromorphic computing applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4979-4985"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 1.8-kV Normally-Off Al-Rich AlGaN Channel HEMTs Featuring a Recessed Gate and Superlattice Structure 具有凹栅和超晶格结构的1.8 kv富铝AlGaN通道hemt

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-07-09 DOI: 10.1109/TED.2026.3708421

Jaejin Heo;Joocheol Jeong;Shyam Mohan;Hyogeun Cho;Okhyun Nam;Sakhone Pharkphoumy;Hyun-Seop Kim

{"title":"A 1.8-kV Normally-Off Al-Rich AlGaN Channel HEMTs Featuring a Recessed Gate and Superlattice Structure","authors":"Jaejin Heo;Joocheol Jeong;Shyam Mohan;Hyogeun Cho;Okhyun Nam;Sakhone Pharkphoumy;Hyun-Seop Kim","doi":"10.1109/TED.2026.3708421","DOIUrl":"https://doi.org/10.1109/TED.2026.3708421","url":null,"abstract":"This work reports a normally-off Al-rich (Al > 60%) AlGaN channel high-electron-mobility transistor (HEMT) employing a recessed-gate metal–insulator–semiconductor (MIS) architecture and an AlN/AlGaN superlattice (SL) buffer. The device achieves a threshold voltage of +4.7 V, an <sc>on-resistance of <inline-formula> <tex-math>$1470~Omega cdot $ </tex-math></inline-formula>mm, and a breakdown voltage (BV) of 1.8 kV at <inline-formula> <tex-math>${L}_{textit {gd}} = 25~mu $ </tex-math></inline-formula>m without field plates. To identify the origin of the elevated <sc>on-resistance, systematic transfer length method (TLM) and multifrequency capacitance–voltage (<inline-formula> <tex-math>$C$ </tex-math></inline-formula>–<inline-formula> <tex-math>$V$ </tex-math></inline-formula>) analyses were performed in comparison with a co-fabricated depletion-mode reference device. TLM analysis reveals a fourfold increase in access-region sheet resistance after gate recess, establishing plasma-induced damage as the primary resistance bottleneck rather than intrinsic material limitations. Multifrequency <inline-formula> <tex-math>$C$ </tex-math></inline-formula>–<inline-formula> <tex-math>$V$ </tex-math></inline-formula> analysis further shows that the recess process introduces a high density of slow border traps (<inline-formula> <tex-math>$sim$ </tex-math></inline-formula><inline-formula> <tex-math>$ 3times 10^{{13}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{-{2}}$ </tex-math></inline-formula>eV<inline-formula> <tex-math>${}^{-{1}}text {)}$ </tex-math></inline-formula>, leading to pronounced low-frequency dispersion and hysteresis, while fast interface states remain comparable to the reference device. These results establish a quantitative process–performance baseline for E-mode Al-rich AlGaN HEMTs and identify low-damage etching as a critical path toward improved device performance.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5288-5292"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Substrate-Bias-Induced Gamma-Irradiation Degradation in GaN-on-Si Power HEMTs 衬底偏压诱导的GaN-on-Si功率hemt的γ辐照降解

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-18 DOI: 10.1109/TED.2026.3702660

Xintong Xie;Shuxiang Sun;Pengfei Zhang;Gaoqiang Deng;Xihao Bi;Chengtao Luo;Zhijia Zhao;Gang Xue;Lian Zhang;Jie Wei;Bo Zhang;Xiaorong Luo

{"title":"Substrate-Bias-Induced Gamma-Irradiation Degradation in GaN-on-Si Power HEMTs","authors":"Xintong Xie;Shuxiang Sun;Pengfei Zhang;Gaoqiang Deng;Xihao Bi;Chengtao Luo;Zhijia Zhao;Gang Xue;Lian Zhang;Jie Wei;Bo Zhang;Xiaorong Luo","doi":"10.1109/TED.2026.3702660","DOIUrl":"https://doi.org/10.1109/TED.2026.3702660","url":null,"abstract":"Substrate bias significantly influences the characteristics of GaN power high-electron-mobility transistors (HEMTs). However, its role in the irradiation effects has not been thoroughly investigated. In this work, we systematically study how substrate bias influences the irradiation-induced degradation of GaN HEMTs through extensive comparative experiments. The underlying degradation mechanisms are further analyzed. It is found that the p-GaN gate HEMT with a floating substrate shows a more obvious post-irradiation degradation in threshold voltage, <sc>off-state drain leakage current, and dynamic <sc>on-resistance, when compared to the HEMT with a grounded substrate. The underlying mechanism is revealed by characterizing substrate leakage current and capacitance. The crosstalk effect induced by drain voltage during irradiation would intensify the generation of irradiation damages between the substrate and source/gate, owing to the enhanced electric field therein. Therefore, a floating substrate would make the device more susceptible to the total-ionizing-dose irradiation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5297-5300"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Boosting ALD In2O3 Transistor Performance Using Hybrid H2O and O3 Co-Reactant 利用混合H2O和O3助反应物提高ALD In2O3晶体管性能

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-07-03 DOI: 10.1109/TED.2026.3707125

Ziheng Wang;Kai Jiang;Chen Wang;Hequn Zhou;Liankai Zheng;Zhiyu Lin;Mengwei Si

引用次数: 0

Synergistic Enhancement of a-IGZTO TFTs via Hydrogen-Tuned Bilayer Gate-Stack Engineering 基于氢调谐双层门叠工程的a-IGZTO tft协同增强

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-07-08 DOI: 10.1109/TED.2026.3708107

Yena Kim;Se Eun Kim;Gwang-Bok Kim;Sang Won Chung;Seon Woong Bang;Yeonghun Kim;Jae Myoung Kim;Kyoung-Seok Son;Sunhee Lee;Jae Kyeong Jeong

{"title":"Synergistic Enhancement of a-IGZTO TFTs via Hydrogen-Tuned Bilayer Gate-Stack Engineering","authors":"Yena Kim;Se Eun Kim;Gwang-Bok Kim;Sang Won Chung;Seon Woong Bang;Yeonghun Kim;Jae Myoung Kim;Kyoung-Seok Son;Sunhee Lee;Jae Kyeong Jeong","doi":"10.1109/TED.2026.3708107","DOIUrl":"https://doi.org/10.1109/TED.2026.3708107","url":null,"abstract":"We report high-performance top-gate amorphous indium–gallium–zinc–tin–oxide (<inline-formula> <tex-math>$a$ </tex-math></inline-formula>-IGZTO) thin-film transistors (TFTs) incorporating a hydrogen (H)-tuned bilayer gate insulator (GI) consisting of SiO2 and Al2O3. The bilayer stack integrates the H-rich SiO2 interlayer and Al2O3 top layer with relatively high dielectric constant, enabling concurrent control of H doping and interface trap states. By adjusting the O2 plasma density (PO2) during plasma-enhanced atomic layer deposition (PEALD), H incorporation and oxygen vacancy (VO) suppression were simultaneously optimized. The optimized device exhibited a high field-effect mobility of 71.8 cm2/V<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>s, near-zero threshold voltage <inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula> of 0.12 V, and sharp subthreshold swing of 0.25 V/decade. Chemical profiling revealed that Sn–H and In–H bonding played a dominant role in carrier transport, while excess H and VO-related trap states were effectively mitigated through PO2 tuning. The device also showed excellent bias stress stability, exhibiting a <inline-formula> <tex-math>${V} _{text {TH}}$ </tex-math></inline-formula> shift of +0.08 and +0.02 V under positive and negative stress, respectively. These results demonstrate that the synergistic modulation of H incorporation and gate-stack composition is an effective strategy to realize reliable and high-mobility oxide TFTs for advanced display backplane applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5113-5119"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Frequency-Tunable Magnetron Using Barium Strontium Titanate Ceramics 钛酸钡锶陶瓷的频率可调磁控管

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-23 DOI: 10.1109/TED.2026.3702989

Zheng Yang;Jianlong Liu;Zhaoyang Tang;Kongyi Hu;Dayang Wang;Zhijianmucuo Dong;Yong Tao;Baoqing Zeng

{"title":"Frequency-Tunable Magnetron Using Barium Strontium Titanate Ceramics","authors":"Zheng Yang;Jianlong Liu;Zhaoyang Tang;Kongyi Hu;Dayang Wang;Zhijianmucuo Dong;Yong Tao;Baoqing Zeng","doi":"10.1109/TED.2026.3702989","DOIUrl":"https://doi.org/10.1109/TED.2026.3702989","url":null,"abstract":"Frequency tunability is of great significance for improving the heating uniformity of food in microwave ovens, but existing tunable magnetrons face challenges in large-scale application within microwave ovens. In this article, we study a tunable magnetron utilizing barium strontium titanate (BST) ceramics. Three-dimensional particle-in-cell (PIC) simulations predict that this magnetron maintains a power output of 3.4 kW, an efficiency of 69.2%, and a high mode separation ratio of 67% while achieving a tuning bandwidth of 63 MHz, demonstrating pure and stable <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-mode oscillation. Furthermore, the feasibility of the design is indirectly validated using structurally simple BST ceramic plates, achieving a tuning bandwidth of 39.2 MHz under a 1.6 kV negative bias. This design not only conveniently and rapidly achieves a relatively wide tuning bandwidth but also largely preserves some core advantages of microwave oven magnetrons: simple, compact structure, and low cost. Therefore, this design provides a promising technical pathway for improving food heating uniformity in microwave ovens. Meanwhile, its rapid electrical frequency tuning capability also offers potential application prospects in enhancing the information dimension of radar system detection.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5188-5194"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Transactions on Electron Devices Publication Information IEEE电子设备出版信息汇刊

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-08-10 DOI: 10.1109/TED.2026.3711234

引用次数: 0