IEEE Transactions on Electron Devices最新文献

{"title":"Corrections to “Electron Emission Regimes of Planar Nano Vacuum Emitters”","authors":"Marco Turchetti;Yujia Yang;Mina Bionta;Alberto Nardi;Luca Daniel;Karl K. Berggren;Phillip D. Keathley","doi":"10.1109/TED.2024.3450435","DOIUrl":"https://doi.org/10.1109/TED.2024.3450435","url":null,"abstract":"Presents corrections to the paper, Electron Emission Regimes of Planar Nano Vacuum Emitters.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7213-7213"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736347","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Performance of NiO/β-Ga₂O₃ Heterojunction Photodetector via Piranha Treatment and Its Application to Solar-Blind Communication","authors":"Hao Chen;Xiaoli Lu;Zeyulin Zhang;Dinghe Liu;Wei Wei;Yiru Yan;Liru Zeng;Dazheng Chen;Qian Feng;Hong Zhou;Jincheng Zhang;Chunxiang Zhu;Chunfu Zhang;Yue Hao","doi":"10.1109/TED.2024.3479161","DOIUrl":"https://doi.org/10.1109/TED.2024.3479161","url":null,"abstract":"In this work, we demonstrated a high-performance NiO/\u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 heterojunction photodetector using piranha solution pretreatment technology. After treatment, the NiO/\u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 heterojunction exhibited an excellent electrical performance, including a higher on/off ratio of \u0000<inline-formula> <tex-math>$1times 10^{{7}}$ </tex-math></inline-formula>\u0000, a lower reverse current of 0.28 pA, and an improved ideal factor. Additionally, the solar-blind detection performance of treated sample was significantly enhanced, including a 2900% increase in photo-to-dark-current ratio (PDCR), a 140% increase in responsivity, and a 900% increase in detectivity. Notably, excellent rise time and decay time were observed to be 60 and 50 ms after treatment, demonstrating an impressive reduction of 97% and 98%, respectively. This fast response characteristic has a wide range of applications. Thus, we conducted an optical communication test based on an original solar-blind communication system. Data transmission was successfully achieved ten times with a short sampling time of 100 ms. These results illustrate the effectiveness of piranha solution pretreatment in elevating the performance of Ga2O3-based heterojunction photodetector.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7752-7757"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices","authors":"Jinglin Li;Aditya Shekhar;Willem D. van Driel;Guoqi Zhang","doi":"10.1109/TED.2024.3482252","DOIUrl":"https://doi.org/10.1109/TED.2024.3482252","url":null,"abstract":"In this article, we provide a comprehensive review of defect formation at the atomic level in interfaces and gate oxides, focusing on two primary defect types: interface traps and oxide traps. We summarize the current theoretical models and experimental observations related to these intrinsic defects, as they critically impact device performance and reliability. By integrating theoretical insights with experimental data, this review provides a thorough understanding of the atomic-scale interactions that govern defect formation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7230-7243"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Electron Devices Information for Authors","authors":"","doi":"10.1109/TED.2024.3480497","DOIUrl":"https://doi.org/10.1109/TED.2024.3480497","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"C3-C3"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736247","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reflections in Traveling Wave Tubes: Simulation Using the 1-D Time-Domain Hamiltonian Model DIMOHA With Experimental Validation","authors":"Khalil Aliane;Frédéric André;Yves Elskens","doi":"10.1109/TED.2024.3474611","DOIUrl":"https://doi.org/10.1109/TED.2024.3474611","url":null,"abstract":"DIMOHA is a many-particle time-domain model offering a good balance between exhaustive physics and time efficiency. We apply this model to study the effects of defects and reflections in the slow wave structure (SWS) of a traveling wave tube (TWT). To assess DIMOHA’s validity, we set up a TWT with varying reflection coefficients at the tube’s end. A ripple effect in saturated output power with respect to frequency is measured and simulated self-consistently with a rough agreement.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7818-7823"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Performance UV Detector Using Al-Doped ZnO Phototransistor Prepared by Initiated-CVD Doping Technique","authors":"Jongsu Baek;Heetae Kim;Dongbin Kim;Yoonho Choi;Yongki Kim;Youngbin Yoon;Min Ju Kim;Myunghun Shin;Byung Jin Cho","doi":"10.1109/TED.2024.3481208","DOIUrl":"https://doi.org/10.1109/TED.2024.3481208","url":null,"abstract":"A novel doping technique with an initiated chemical vapor deposition (iCVD) process is applied to fabricate aluminum (Al)-doped zinc oxide (ZnO) channel thin-film ultraviolet (UV) phototransistor (PT). The iCVD doping technique can successfully introduce Al throughout the ZnO channel without any surface damage. The sub-bandgap states mainly due to oxygen vacancy (VO) defects in the ZnO channel are effectively suppressed by Al doping; the subthreshold swing (SS) of the PT has been reduced by more than half to 168 mV/dec and under negative gate bias illumination stress, the threshold voltage shift is reduced by about half to −2.03 V, which improves the reliability. For the UV detection, the Al-doped ZnO PT exhibits a high responsivity of 358.93 A\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000 W−1, an ultrahigh UV-to-visible rejection ratio of \u0000<inline-formula> <tex-math>$4.81times 10^{{6}}$ </tex-math></inline-formula>\u0000, a high detectivity (\u0000<inline-formula> <tex-math>${D} ^{ast } $ </tex-math></inline-formula>\u0000) of \u0000<inline-formula> <tex-math>$1.68times 10^{{15}}$ </tex-math></inline-formula>\u0000 Jones, a low noise equivalent power (NEP) of \u0000<inline-formula> <tex-math>$2.98times 10^{-{18}}$ </tex-math></inline-formula>\u0000 W\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000 Hz−1, and fast switching performance. The developed Al-doped ZnO PT can be used in low-cost and high-performed UV detection for various applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7596-7601"},"PeriodicalIF":2.9,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142790279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Performance of Vertical β-Ga₂O₃ Schottky Barrier Diodes Through 212-MeV Low-Fluence Ge Ion Irradiation","authors":"Junzheng Gao;Yun Li;Weihao Lin;Zhimei Yang;Min Gong;Mingmin Huang;Yao Ma","doi":"10.1109/TED.2024.3481201","DOIUrl":"https://doi.org/10.1109/TED.2024.3481201","url":null,"abstract":"The effects of 212-MeV Ge ion irradiation on the electrical performance of the vertical \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 Schottky barrier diode (SBD) devices have been investigated in this work. With a fluence of \u0000<inline-formula> <tex-math>${1} times {10}^{{8}}$ </tex-math></inline-formula>\u0000 ions/cm2, it is found that the electrical performance of the vertical \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 SBD is significantly changed, including a decrease in the effective carrier concentration (\u0000<inline-formula> <tex-math>${N} _{text {D}}$ </tex-math></inline-formula>\u0000) from \u0000<inline-formula> <tex-math>$8.82times 10^{{15}}$ </tex-math></inline-formula>\u0000 to \u0000<inline-formula> <tex-math>${2.64} times {10}^{{15}}$ </tex-math></inline-formula>\u0000 cm\u0000<inline-formula> <tex-math>$^{-{3}}$ </tex-math></inline-formula>\u0000, a reduction in reverse current density (\u0000<inline-formula> <tex-math>${J} _{text {R}}$ </tex-math></inline-formula>\u0000) from \u0000<inline-formula> <tex-math>$1.39times 10^{-{6}}$ </tex-math></inline-formula>\u0000 to \u0000<inline-formula> <tex-math>$1.17times 10^{-{7}}$ </tex-math></inline-formula>\u0000 A/cm2, a restoration of the forward current density (\u0000<inline-formula> <tex-math>${J} _{text {F}}$ </tex-math></inline-formula>\u0000) and series resistance (\u0000<inline-formula> <tex-math>${R} _{text {S}}$ </tex-math></inline-formula>\u0000), and an increase in the reverse breakdown voltage (BV) from 218 to 420 V. Deep-level transient spectroscopy (DLTS) analysis reveals a decrease in the asymmetric defect peak at \u0000<inline-formula> <tex-math>${E} _{text {C}}-{0.78}$ </tex-math></inline-formula>\u0000 eV in the virgin sample, accompanied by the appearance of the \u0000<inline-formula> <tex-math>${E} _{text {C}} -0.84$ </tex-math></inline-formula>\u0000 eV defect peak in the irradiated sample. This indicates that Ge ion irradiation can modify the arrangement of defect levels and interface states (\u0000<inline-formula> <tex-math>${N} _{text {SS}}$ </tex-math></inline-formula>\u0000), consequently leading to reshaping the distribution of asymmetric defect peaks. Additionally, technology computer-aided design (TCAD) simulations demonstrate that the weakening of the metal-semiconductor (M-S) interface state, enhanced mobility, and the presence of deep-level defects in the bulk material together contribute to alter the electrical properties of the device postirradiation. Therefore, the low-fluence Ge ion irradiation can optimize the Au/Ni/\u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 interface and improve the electrical performance of the vertical \u0000<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>\u0000-Ga2O3 SBD.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7366-7371"},"PeriodicalIF":2.9,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Narrowband Longitudinal Leaky Surface Acoustic Wave Devices on LiTaO3/SiO2/SiC Hetero-Structure With Q Over 2000","authors":"Zongqin Sun;Sulei Fu;Shuai Zhang;Peisen Liu;Boyuan Xiao;Baichuan Li;Zhibin Xu;Weibiao Wang;Yu Guo","doi":"10.1109/TED.2024.3478182","DOIUrl":"https://doi.org/10.1109/TED.2024.3478182","url":null,"abstract":"In the rapidly evolving fifth-generation (5G) communication system, there is an urgent need for high-performance surface acoustic wave (SAW) filters to address challenges such as frequency band congestion and smaller gaps between adjacent frequency bands. In this study, we focused on investigating longitudinal leaky SAW (LLSAW) devices based on the LiTaO3/SiO2/SiC hetero-structure, specifically designed for narrowband applications. A comprehensive analysis of the intrinsic electromechanical coupling coefficients (\u0000<inline-formula> <tex-math>${K} ^{{2}}_{textit {ij}}$ </tex-math></inline-formula>\u0000) of shear horizontal SAW (SH-SAW) and LLSAW on LiTaO3 (LT) thin films was conducted. Via carefully adjusting the LT cut angle \u0000<inline-formula> <tex-math>$theta $ </tex-math></inline-formula>\u0000 and propagation angle \u0000<inline-formula> <tex-math>$psi $ </tex-math></inline-formula>\u0000, strong excitation of LLSAWs was achieved. Through elaborated parameter optimization, LLSAW resonators were fabricated based on a \u0000<inline-formula> <tex-math>$50^{circ }{Y}$ </tex-math></inline-formula>\u0000-\u0000<inline-formula> <tex-math>${45}^{circ }{X}$ </tex-math></inline-formula>\u0000 LT/SiO2/SiC platform, demonstrating excellent performance on frequencies and quality factors (Q). These resonators exhibited small effective electromechanical coupling coefficients (\u0000<inline-formula> <tex-math>${K}_{text {eff}}^{{2}}$ </tex-math></inline-formula>\u0000) ranging from 4.6% to 5.9% and scalable resonance frequencies ranging from 2887 to 6050 MHz. In addition, a high maximum Bode-Q of 2121 was attained. Finally, filters were numerically simulated using LLSAW resonators and a narrowband filter with fractional bandwidth (FBW) of 2.3% and minimum insertion loss (ILmin) of 1.4 dB was successfully fabricated. The developed LT/SiO2/SiC structure emerges a great prospect of high-performance narrowband applications in the 5G era.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7740-7746"},"PeriodicalIF":2.9,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Meshless Method for Trajectory Simulation of Charged Particles in Static Axisymmetric Electric and Magnetic Fields","authors":"Pengbo Wang;Fan Yang;Xuan Liu","doi":"10.1109/TED.2024.3478198","DOIUrl":"https://doi.org/10.1109/TED.2024.3478198","url":null,"abstract":"The meshless method has strong abilities for conformal modeling and multiphysics coupling. This study pioneers the application of the meshless local Petrov-Galerkin (MLPG) method in the trajectory simulation of charged particles in static axisymmetric electric and magnetic fields, enhancing simulation accuracy and simplifying the treatment of multiphysics coupling issues. The MLPG method is introduced to solve the electric field. Then the field mapping between the electric field and electron trajectories can be easily realized by combining the node sets, which are used to discretize the problem domain and the electron trajectories. In the mapping process, a simple interface processing technique is also proposed. The numerical experiments indicate that the MLPG method has a higher accuracy than the traditional finite difference method (FDM) and finite element method (FEM) under the same element size. The proposed meshless-based method is also verified by analyzing the magnetron injection gun (MIG) of an 800 GHz gyrotron and comparing the results with the particle-in-cell (PIC) simulation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7824-7830"},"PeriodicalIF":2.9,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Broadband Circular TE₀₁ Mode Converter Using Highly Deformed Circular Waveguide","authors":"Zhenwei Liu;Zewei Wu;Ran Zhang;Guo Liu;Jianxun Wang;Tieyang Wang;Fangfang Song;Shuanzhu Fang;Yong Luo","doi":"10.1109/TED.2024.3478195","DOIUrl":"https://doi.org/10.1109/TED.2024.3478195","url":null,"abstract":"A method for broadening the operating bandwidth of circular TE01 mode converter is proposed by using highly deformed circular waveguide (CW). The influence of deformation on the field patterns and the mode spectrum is investigated, and the maximum mode spectral gap between the TE01 mode and the undesired modes is deduced. According to the analysis, a K-band circular TE01 mode converter using highly deformed CW is designed, fabricated, and measured. The results show that conversion efficiency of a single mode converter higher than 89.1%, the reflection better than −20 dB, and the mode purity exceeds 98.7% within a relative bandwidth of 40.35%. The angle-independent transmissions demonstrating high mode purity and the appearance of TE01 mode is confirmed by the near-field pattern measurement. The mode converter features broad bandwidth, high mode purity, and compactness, which can be applied to cold-test experiments of gyro-TWT components and the high-power transmission line devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7836-7842"},"PeriodicalIF":2.9,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}