IEEE Transactions on Electron Devices最新文献

{"title":"Bottom p-i-n Isolation Enabling GAA Nanosheet Transistor for Low-Power Applications","authors":"Chunlei Wu;Yumin Xu;Boqian Shen;Fei Zhao;Jian Ma;Hanzhi Gu;Yueyuan Yu;Min Xu;Qingqing Sun;David Wei Zhang","doi":"10.1109/TED.2024.3456774","DOIUrl":"https://doi.org/10.1109/TED.2024.3456774","url":null,"abstract":"A novel gate-all-around (GAA) nanosheet field-effect transistor (NSFET) with bottom p-i-n isolation is proposed for the first time, which can effectively suppress the parasitic subchannel leakage through introducing a reverse-biased p-i-n subtunnel FET (TFET) channel. By combining the advantages of GAA MOS channel and sub-TFET channel, the proposed NSFET with bottom p-i-n isolation scheme can reduce off leakage current to the same level as NSFET with full bottom dielectric isolation (BDI) scheme, exhibiting superior process compatibility and excellent immunity to process variations at the same time. Performance benchmarking in terms of both static power consumption and power delay product of bottom p-i-n NSFETs compared to full BDI NSFETs and PTS NSFETs has been carried out to assess the device performance for low-power operation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6493-6498"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fully Electrically Modulated Hetero-Synapses With Lateral Multigate Ferroelectric Thin Film Transistor","authors":"Peng Yang;Hui Xu;Shihao Yu;Yang Liu;Bing Song;Haijun Liu;Sen Liu;Qingjiang Li","doi":"10.1109/TED.2024.3456775","DOIUrl":"https://doi.org/10.1109/TED.2024.3456775","url":null,"abstract":"In the human brain, astrocytes modulate synaptic activities by either enhancing or inhibiting neurotransmitter transmission. It is crucial to develop and simulate this hetero-synaptic function in neuromorphic computing. This research presents a pioneering fully electrically modulated lateral multigate ferroelectric thin film transistor (FeTFT) device that integrates pre-synaptic neurons (Gate-1),postsynaptic neurons, and additional modulated gate terminals (Gate-2), which can efficiently simulate astrocyte function in biological synapses. In addition, it allows a dynamic modulation range of more than tenfold, with a remarkably low power consumption of 150 fJ per spike. The lateral multigate FeTFT surpasses competing designs with its integrability and bidirectional modulation capability based on full electrical modulation, multigate extensibility, high energy efficiency, and compatibility with CMOS technology. In summary, this conceptual innovation is proposed to facilitate to enable the realization of comprehensive and complicated synaptic behaviors, paving a new path for high-efficiency neuromorphic computing hardware systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7138-7143"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis and Suppression of Mode Competition in a Relativistic Klystron Oscillator","authors":"Rujin Deng;Zhimin Li;Xingjun Ge;Fangchao Dang;Peng Zhang;Baoliang Qian","doi":"10.1109/TED.2024.3453224","DOIUrl":"https://doi.org/10.1109/TED.2024.3453224","url":null,"abstract":"The suppression of asymmetric mode competition is one of the basic conditions for proper operation of high-power microwave (HPM) sources. This article presents experimental results on mode competition in a relativistic klystron oscillator (RKO) operating under low magnetic field conditions. A competing mode with a frequency of 6.27 GHz is observed in the experiments and is in good agreement with the particle-in-cell (PIC) simulation results. It is determined that the competing mode was the TM211 mode. The asymmetric mode competition mechanism is found by theoretical and simulation studies to be that the asymmetric mode TM211 mode and the symmetric mode TM011 mode of the bunching cavity have the similar external quality factor \u0000<inline-formula> <tex-math>${Q} _{text {e}}$ </tex-math></inline-formula>\u0000. Upon modifying the bunching cavity of the RKO, \u0000<inline-formula> <tex-math>${Q} _{text {e}}$ </tex-math></inline-formula>\u0000 increases from 1036 to 3421 for the symmetric mode and decreases from 1041 to 611 for the asymmetric mode, while other physical properties are less changed. The efficacy of this technique in suppressing asymmetric mode competition has been substantiated through both PIC simulations and experimental results.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7030-7036"},"PeriodicalIF":2.9,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"AC-TDDB Behavior in 45 nm PDSOI Ultra-Thin Gate Oxide FETs Using SILC Spectroscopy","authors":"Asifa Amin;Sumreti Gupta;Purushothaman Srinivasan;Oscar H. Gonzalez;Abhisek Dixit","doi":"10.1109/TED.2024.3456780","DOIUrl":"https://doi.org/10.1109/TED.2024.3456780","url":null,"abstract":"In this article, an extensive experimental investigation of alternating current (ac)-time-dependent dielectric breakdown (TDDB) in 45 nm technology-based partially depleted silicon-on-insulator (PDSOI) devices is presented. This investigation is performed on ultra-thin oxide devices of two different thicknesses at \u0000<inline-formula> <tex-math>$125~^{circ }$ </tex-math></inline-formula>\u0000C. The effect of oxide thickness, device polarity, and ac stress variables are studied in detail. Based on ac frequencies and duty cycles (DTCs), the lifetime at radio frequencies (RFs) up to 1 GHz is predicted using the frequency power law. Almost a \u0000<inline-formula> <tex-math>$90times $ </tex-math></inline-formula>\u0000 increase in T63 at RF is observed when compared to T63 under direct current (dc) stress in thin NFETs. A comprehensive study using stress-induced leakage current (SILC) spectroscopy in these devices is utilized for studying the breakdown behavior further. The SILC and trap generation rate is a function of frequency, DTC, and gate sense voltage, leading to an improved lifetime under ac stress. Furthermore, temperature-dependent ac TDDB investigations show that a higher trap generation rate at high temperatures leads to accelerated damage leading to shorter time-to-breakdown (TBD).","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6486-6492"},"PeriodicalIF":2.9,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Heavy-Ions-Induced Leakage Current Modes and Degradation Mechanism in SiC MOSFETs Under Complex Heavy Ion Conditions","authors":"Maojiu Luo;Yourun Zhang;Yucheng Wang;Li Li;Wanli Ma;Bo Zhang","doi":"10.1109/TED.2024.3456783","DOIUrl":"https://doi.org/10.1109/TED.2024.3456783","url":null,"abstract":"A comprehensive investigation is conducted to explore the heavy-ions-induced leakage current (HIILC) modes and degradation mechanism in silicon carbide (SiC) MOSFET. The ions used in irradiation experiments had different linear energy transfer (LET) values, which aimed to simulate complex ion conditions in aerospace applications. The distinct HIILC degradation modes of SiC MOSFETs are observed first under heavy ion irradiation with different LET values. Under irradiation with low LET ions, the overall leakage current degradation is dominated by the degradation of the drain current. Conversely, gate current has a higher degradation rate under irradiation with high LET ions. The degradation mechanisms of leakage current are discussed by combining the defect analysis of irradiated samples and simulation results. We propose and verify for the first time that the generation of stacking faults (SFs) in SiC MOSFETs under heavy ion irradiation is the cause of drain current degradation regardless of LET values. Additionally, under high LET ion irradiation, damage caused by a high electric field in the gate oxide is presumed to be attributed to the rapid degradation in gate current. The proposed theory provides a foundation and guidance for reinforcing against HIILC degradation of SiC MOSFET by addressing the process and material characteristics of the SiC.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6573-6580"},"PeriodicalIF":2.9,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multifrequency-Coded RFID Microstrip Photosensor Based on ZnOAgCuS Nanocomposites","authors":"Fengjuan Miao;Jiapeng Dai;Bairui Tao;Man Zhao;Paul K. Chu","doi":"10.1109/TED.2024.3456779","DOIUrl":"https://doi.org/10.1109/TED.2024.3456779","url":null,"abstract":"Radio frequency identification (RFID) is widely used in indoor lighting systems due to advantages, such as programmability, stability, and high detection accuracy. Herein, a multifrequency-coded RFID microstrip photosensor based on zinc oxide (ZnO)/silver (Ag)/copper sulfide (CuS) nanocomposites is designed; at the same time, it has the excellent photoelectric performance of ZnO and CuS, which enhances the response of the sensor to the light signal, and the high photoconductivity of Ag, enhances the RFID radio frequency signal, improves the reading distance and accuracy, and can be used to detect the light of four frequencies. A complementary open-loop resonator (CSRR) patch microstrip antenna was designed using high-frequency structure simulator (HFSS) software, and the structure of the photosensor was optimized. Three coding rings are designed by adjusting the length and width of the patch, so that the sensor can realize three-digit coding, and the actual antenna is prepared by sculpting technology. The nanorod-like ZnO, nanolinear Ag, and spherical CuS are prepared by a hydrothermal method, and their structures and morphologies are characterized by SEM, energy-dispersive X-ray spectrometry (EDS), XRD, TEM, and XPS. The amplitude of the antenna under the code “111” is −26.49 dB, and the detection performance is the best. The sensor made by drip coating can detect ambient light in the range of 2.833–2.928 GHz. For a light intensity of 0–53.9 klx, the response time of the photosensor is 17 s, the recovery time is 15 s, the response time of the resistance is 16 s, and the recovery time is 11 s, indicating that the ZnO/Ag/CuS nanocomposites have good responsiveness and recovery.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7002-7009"},"PeriodicalIF":2.9,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GA-BP Neural Networks for Optimal Design of Multistage Depressed Collector for 340-GHz Traveling Wave Tubes","authors":"Gongao Xia;Xiangpeng Liu;Yuan He;Jianwei Zhong;Zhihao Jin;Fang Zhu;Zhiqiang Zhang;Wenxin Liu","doi":"10.1109/TED.2024.3457919","DOIUrl":"https://doi.org/10.1109/TED.2024.3457919","url":null,"abstract":"In this article, a three-stage depressed collector for a 340-GHz traveling wave tube (TWT) is designed, and thermal analysis is finished to test the thermal reliability. To quickly finish the design of the collectors with high efficiency, low reflux rate, and heat dissipation, the back-propagating (BP) neural network (NN) and a multiobjective optimization algorithm are combined to optimize the collector. First, BP NN is used to construct an approximate calculation model between the ten input parameters of the collector and the three target values: 1) recovery efficiency; 2) reflux rate; and 3) heat balance. Then, the nondominated sorting genetic algorithm III (NSGA-III) was used to find Pareto optimal solutions for the three targets. The proposed method’s optimal recovery efficiency is 88.17%, the reflux rate is 0.09%, and the temperature difference inside the collector is only \u0000<inline-formula> <tex-math>$16~^{circ }$ </tex-math></inline-formula>\u0000C, achieving thermal balance. It provides a reference for the fast and accurate design of a multistage depressed collector (MDC) of a 340-GHz TWT.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7066-7073"},"PeriodicalIF":2.9,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142540456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Adaptive Interconnection of High-Performance Micromodular Silicon Transistors Using Electrohydrodynamic Jet Printing","authors":"Hubert N. Elly;Kaifan Yue;Rebecca K. Banner;Siddharth Kurup;Daniel Aziz;Saksham Malik;Kira L. Barton;Michael A. Filler;Eric M. Vogel","doi":"10.1109/TED.2024.3457907","DOIUrl":"https://doi.org/10.1109/TED.2024.3457907","url":null,"abstract":"Micromodular n-channel metal-oxide-silicon transistors were fabricated, transferred to a foreign substrate, and adaptively interconnected using high-resolution electrohydrodynamic jet (e-jet) printed metal wires to create depletion-load nMOS inverters. The transferred transistors have effective electron mobilities approaching 500 cm\u0000<inline-formula> <tex-math>$^{{2}} cdot $ </tex-math></inline-formula>\u0000 V\u0000<inline-formula> <tex-math>$^{-{1}} cdot $ </tex-math></inline-formula>\u0000 s−1 and subthreshold swing as low as 82 mV/decade, while the nMOS inverters have gains close to 30. Detailed electrical characterization shows that e-jet printing does not impact transistor performance. Moreover, e-jet printing can accommodate variations in transistor placement, opening the door to systems that can correct manufacturing errors in real-time. This work sets the stage for on-demand microelectronics manufacturing with extreme customizability at the transistor level.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7149-7155"},"PeriodicalIF":2.9,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p- and n-MOSFETs","authors":"Rui Su;Zhuo Chen;Mengnan Ke;Dawei Gao;Walter Schwarzenbach;Bich-Yen Nguyen;Junkang Li;Rui Zhang","doi":"10.1109/TED.2024.3422951","DOIUrl":"https://doi.org/10.1109/TED.2024.3422951","url":null,"abstract":"The mobility scattering mechanisms in the ultra-thin-body (UTB) Ge-OI p- and n-MOSFETs have been systematically investigated. It is found that the \u0000<inline-formula> <tex-math>${E} _{text {eff}}^{-{2}}$ </tex-math></inline-formula>\u0000 dependence is confirmed for the hole mobility in Ge-OI pMOSFETs, while the electron mobility exhibits an unusually strong dependence on \u0000<inline-formula> <tex-math>${E} _{text {eff}}$ </tex-math></inline-formula>\u0000 (\u0000<inline-formula> <tex-math>$propto {E} _{text {eff}}^{-{4}}text {)}$ </tex-math></inline-formula>\u0000. The \u0000<inline-formula> <tex-math>$mu _{text {ph}}$ </tex-math></inline-formula>\u0000 exhibits an \u0000<inline-formula> <tex-math>${E} _{text {eff}}^{,{-{0}.{3}}}$ </tex-math></inline-formula>\u0000 dependence for both holes and electrons, along with a temperature dependence of \u0000<inline-formula> <tex-math>$sim {T} ^{,{-{1}.{8}}}$ </tex-math></inline-formula>\u0000. The \u0000<inline-formula> <tex-math>$mu _{text {total}}$ </tex-math></inline-formula>\u0000 is measured at different depletion layer carrier densities (\u0000<inline-formula> <tex-math>${N} _{text {depl}}text {)}$ </tex-math></inline-formula>\u0000, revealing that \u0000<inline-formula> <tex-math>$mu _{text {Coulomb}}$ </tex-math></inline-formula>\u0000 increases with the rise of \u0000<inline-formula> <tex-math>${N} _{text {depl}}$ </tex-math></inline-formula>\u0000. Specially, \u0000<inline-formula> <tex-math>$mu _{text {Coulomb}}$ </tex-math></inline-formula>\u0000 exhibits \u0000<inline-formula> <tex-math>${N} _{text {depl}}^{{0}.{5}}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>${N} _{text {depl}}^{{1}.{8}}$ </tex-math></inline-formula>\u0000 dependencies for electrons and holes, respectively. Consequently, more pronounced mobility degradation has been confirmed in UTB Ge-OI nMOSFETs than in UTB Ge-OI pMOSFETs. These findings suggest universal carrier scattering mechanisms for both holes and electrons in UTB Ge-OI channels, which are valuable for understanding carrier transport in thin-channel Ge devices for future advanced technology nodes.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 10","pages":"5801-5806"},"PeriodicalIF":2.9,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142320480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Depletion-Mode Oxide TFT-Based MicroLED Pixel Circuit for High-Current Pulse Width Modulation With Low Driving Voltage","authors":"Kyeong-Soo Kang;Hee-Ok Kim;Jong-Heon Yang;Jae-Eun Pi;Yong-Duck Kim;Chun-Won Byun;Ji-Hwan Park;Chanjin Park;Minji Kim;Yumin Yun;Soo-Yeon Lee","doi":"10.1109/TED.2024.3456767","DOIUrl":"https://doi.org/10.1109/TED.2024.3456767","url":null,"abstract":"In this article, we propose a pixel circuit suitable for depletion-mode oxide thin-film transistors (TFTs) to drive micro-light-emitting diode (\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000LED) with pulse width modulation (PWM). In the proposed pixel circuit, both the constant current generation (CCG) part and the PWM part compensate for the variation in the threshold voltage (\u0000<inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula>\u0000) of the driving TFT (DRT) through a source-follower structure and store the data voltage entirely without capacitive division. By avoiding voltage division, the data range and the corresponding control signal range can be reduced, lowering the switching power. The operation of the proposed pixel circuit is verified and compared with the conventional pixel circuit through simulation using HSPICE from Synopsys, employing an oxide TFT model based on measured data from the fabricated device. In addition, the proposed circuit is experimentally validated through circuit fabrication. Both simulation and experimental results exhibit consistent PWM driving, indicating accurate compensation for variations in both parts, along with enhanced operation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6820-6825"},"PeriodicalIF":2.9,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}