用于多千伏和安培级应用的Ga2O3垂直SBD，具有悬浮场板辅助浅台面终端

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-07-10 DOI:10.1109/TED.2025.3584011

Xueli Han;Xiaorui Xu;Zhengbo Wang;Hanchao Yang;Desen Chen;Yicong Deng;Duanyang Chen;Haizhong Zhang;Hongji Qi

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引用次数: 0

摘要

在这项工作中，提出并制作了一种具有悬浮场板辅助浅台面终端的垂直氧化镓（Ga2O3）肖特基势垒二极管（SBD）。在ICP刻蚀过程中采用Cl2实现悬浮场板，有利于Ga2O3的各向同性刻蚀。与浅台面SBD相比，SFPM的引入可以进一步优化电场（E_Field）分布。因此，实现了超过3.5 kV的高击穿电压（BV）和5.77 m \Omega \cdot $ cm2的低比导通电阻，从而获得了功率优值(PFOM) >2.12 GW/cm2。此外，还制作了3 × 3 mm2的大面积器件，实现了超过1.5 kV的BV和2 V时12 a的高正向电流。SFPM-SBD的简化制造工艺，加上其出色的性能，使其成为多千伏和安培级应用的有希望的候选者。

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Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications

In this work, a vertical gallium oxide (Ga2O3) Schottky barrier diode (SBD) with suspended field plate-assisted shallow mesa termination (SFPM-SBD) is proposed and fabricated. The suspended field plate is achieved by using Cl2 in the ICP etching process to facilitate isotropic etching of Ga2O3. Compared with shallow mesa SBD, the introduction of SFPM can further optimize the electric field (E_Field) distribution. Consequently, a high breakdown voltage (BV) of over 3.5 kV and a low specific on-resistance of 5.77 m

$\Omega \cdot $

cm2 are achieved, resulting in a power figure of merit (PFOM) >2.12 GW/cm2. Furthermore, the large-area device with

$3\times 3$

mm2 is fabricated, achieving a BV exceeding 1.5 kV and a high forward current of 12 A at 2 V. The simplified fabrication process of the SFPM-SBD, combined with its outstanding performance, makes it a promising candidate for multikilovolt and ampere-class applications.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.