IEEE Transactions on Electron Devices最新文献_第9页

Effect of Carbon on the Formation of Cobalt Silicide and Thermal Stability for DRAM Application: A Comparative Study on PVD and CVD Methods

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-10 DOI: 10.1109/TED.2024.3523263

Yanping He;Shujuan Mao;Jing Xu;Xianglie Sun;Jianfeng Gao;Weibing Liu;Jinbiao Liu;Xu Chen;Junfeng Li;Xiaolei Wang;Guilei Wang;Chao Zhao;Jun Luo

{"title":"Effect of Carbon on the Formation of Cobalt Silicide and Thermal Stability for DRAM Application: A Comparative Study on PVD and CVD Methods","authors":"Yanping He;Shujuan Mao;Jing Xu;Xianglie Sun;Jianfeng Gao;Weibing Liu;Jinbiao Liu;Xu Chen;Junfeng Li;Xiaolei Wang;Guilei Wang;Chao Zhao;Jun Luo","doi":"10.1109/TED.2024.3523263","DOIUrl":"https://doi.org/10.1109/TED.2024.3523263","url":null,"abstract":"The improved thermal stability of cobalt silicide (CoSi2) becomes pivotal with the introduction of a 4F2 cell architecture, featuring a vertical pillar transistor for DRAM application. To tackle this challenge, carbon preamorphization implantation (C PAI) was employed. This study systematically investigates the effects of C PAI on both the formation and thermal stability of CoSi2, taking into account distinct cobalt deposition methods, namely, physical vapor deposition (PVD) and chemical vapor deposition (CVD). Results demonstrate that the presence of carbon delays the nucleation temperature of CoSi2 approximately 50 °C and significantly enhances the morphology and thermal stability of CoSi2 for PVD Co. These observed effects can be explained by the segregation of carbon atoms at the grain boundaries and CoSi2/Si interface. However, the introduction of carbon has a detrimental effect for CVD Co. The variations in results are attributed to variations in the deposition mechanism. This insight provides valuable considerations for optimizing the thermal stability of CoSi2s in the context of future DRAM devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"653-658"},"PeriodicalIF":2.9,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Ferroelectricity and Endurance Using Nanolaminate-Gradient-Structured HfXZr1-XO₂ Films

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-09 DOI: 10.1109/TED.2024.3523869

Jeesoo Lee;Byeong-Kwon Ju;Sung-Hwan Choi

{"title":"Enhanced Ferroelectricity and Endurance Using Nanolaminate-Gradient-Structured HfXZr1-XO₂ Films","authors":"Jeesoo Lee;Byeong-Kwon Ju;Sung-Hwan Choi","doi":"10.1109/TED.2024.3523869","DOIUrl":"https://doi.org/10.1109/TED.2024.3523869","url":null,"abstract":"HfO2-based ferroelectrics are extensively researched in various fields, such as next-generation neuromorphic devices and high-density memory devices, mainly due to their remanent polarization (Pr, 2Pr) capabilities and compatibility with CMOS processes. However, the fatigue effect that occurs when continuous electric pulses are applied to ferroelectric devices is considered one of the significant obstacles in the development and application of these devices. In this study, we proposed a new nanolaminate-gradient structured HZO (GHZO) capacitor that appropriately adjusts only the ratio of the top to bottom materials without changing the thickness and composition ratio of HfXZr1-XO2, securing better ferroelectricity and endurance compared to the existing HZO capacitors. The 2Pr of the GHZO sample is found to be 22.3% larger than that of the reference nonlaminated structure HZO samples when electrical pulses are applied for more than 106 cycles. Additionally, our GHZO films show higher permittivity of 47 (GHZO1), 50 (GHZO2), and 48 (GHZO3) compared to 41 (supercycle HZO) and 37 (1-nm nanolaminate HZO), as well as an improved orthorhombic ratio after 102 cycle pulses. These results propose a method that can be applied to the fabrication of optimal ferroelectric films in the semiconductor industry.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1075-1082"},"PeriodicalIF":2.9,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Failure Mechanism of 1200-V SiC MOSFET With Embedded Schottky Barrier Diode Under Short-Circuit Condition

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-09 DOI: 10.1109/TED.2024.3524371

Xu Li;Xiaochuan Deng;Zhengxiang Liao;Xuan Li;Renxu Jia;Bo Zhang

{"title":"Failure Mechanism of 1200-V SiC MOSFET With Embedded Schottky Barrier Diode Under Short-Circuit Condition","authors":"Xu Li;Xiaochuan Deng;Zhengxiang Liao;Xuan Li;Renxu Jia;Bo Zhang","doi":"10.1109/TED.2024.3524371","DOIUrl":"https://doi.org/10.1109/TED.2024.3524371","url":null,"abstract":"The short-circuit ruggedness and failure mechanism of a commercial silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD-MOS) are evaluated and revealed in this article. Compared with a conventional planar-type SiC MOSFET (C-MOS), a distinctive difference in failure phenomenon is observed for SBD-MOS under short-circuit condition. When the short-circuit withstanding time (<inline-formula> <tex-math>${t}_{text {sc}}$ </tex-math></inline-formula>) of SBD-MOS exceeds <inline-formula> <tex-math>$3.5~mu $ </tex-math></inline-formula>s at 600-V bus voltage, the device fails to shut down, even though the gate is turned off. After a brief decrease, the short-circuit current rises again and continues for a period of time, eventually leading to the destructive failure. In contrast, C-MOS does not observe a similar event and <inline-formula> <tex-math>${t}_{text {sc}}$ </tex-math></inline-formula> reaches to <inline-formula> <tex-math>$6.5~mu $ </tex-math></inline-formula>s. The finite-element simulation and physical analysis reveal that short-circuit stress cause a severe leakage current within the embedded SBD, thereby preventing the interruption of short-circuit current. Unfortunately, the power dissipation caused by SBD leakage current provides a positive feedback with temperature, and thus, temperature continuously increases toward a higher value, eventually leading to the destructive failure of devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1259-1263"},"PeriodicalIF":2.9,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Coupling of Spoof Surface Plasmon Polariton With Multiple-Order Smith–Purcell Radiation in THz Cherenkov Oscillator

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-08 DOI: 10.1109/TED.2024.3524206

E. Khutoryan;A. Kuleshov;S. Ponomarenko;K. Lukin;P. Melezhik;S. Vlasenko;Y. Tatematsu;M. Tani

引用次数: 0

State-Aware Multibit Write Algorithm for TiOx-Based Resistive Switching Memory Devices

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-08 DOI: 10.1109/TED.2024.3521653

Yu Shi;Manoj Sachdev;Guo-Xing Miao

引用次数: 0

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With TiO2 Seed Layer for Enhanced Ferroelectricity

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-08 DOI: 10.1109/TED.2024.3524953

Huan Liu;Dongya Li;Zhi Gong;Peiyuan Du;Fei Yu;Chengji Jin;Mengnan Ke;Xiao Yu;Yan Liu;Yue Hao;Genquan Han

{"title":"Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With TiO2 Seed Layer for Enhanced Ferroelectricity","authors":"Huan Liu;Dongya Li;Zhi Gong;Peiyuan Du;Fei Yu;Chengji Jin;Mengnan Ke;Xiao Yu;Yan Liu;Yue Hao;Genquan Han","doi":"10.1109/TED.2024.3524953","DOIUrl":"https://doi.org/10.1109/TED.2024.3524953","url":null,"abstract":"In this study, the influence of TiO2 seed layers in ferroelectric capacitors with HfZrOx (HZO) solid-solution and HfO2/ZrO2 superlattice structures has been explored. Due to the insertion of the TiO2 seed layer, significant enhancement in ferroelectric properties and reduction in coercive field (<inline-formula> <tex-math>${E}_{text {c}}$ </tex-math></inline-formula>) has been achieved. In addition, samples with the TiO2 seed layer exhibit decent ferroelectricity at a low crystalline annealing temperature of <inline-formula> <tex-math>$300~^{circ }$ </tex-math></inline-formula>C, making them compatible with back-end-of-line (BEOL) processes. Especially, the HfO2/ZrO2 superlattice ferroelectric thin film with a 1-nm TiO2 seed layer exhibits outstanding remnant polarization (<inline-formula> <tex-math>$2{P}_{text {r}}$ </tex-math></inline-formula>) of approximately <inline-formula> <tex-math>$51.4~mu $ </tex-math></inline-formula>C/cm2 with a low <inline-formula> <tex-math>${E}_{text {c}}$ </tex-math></inline-formula> of 0.9 MV/cm, reducing the operating voltage to 1.2 V, and demonstrating stable endurance larger than <inline-formula> <tex-math>$10^{{9}}$ </tex-math></inline-formula> cycles. This study presents a robust approach with BEOL process compatibility for enhancing both the ferroelectric properties and the reliability of future ferroelectric devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"665-670"},"PeriodicalIF":2.9,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical and Thermal Effect of Boron Nitride Nanoplate Additive on Quantum Dot-Converted Light-Emitting Diodes

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-07 DOI: 10.1109/TED.2024.3521954

Meng Chen;Zhongzhi Tian;Qian Feng;Yonghui Zhang;Chong Geng;Zhencan F. Fan;Jay Guoxu Liu;Shu Xu

{"title":"Optical and Thermal Effect of Boron Nitride Nanoplate Additive on Quantum Dot-Converted Light-Emitting Diodes","authors":"Meng Chen;Zhongzhi Tian;Qian Feng;Yonghui Zhang;Chong Geng;Zhencan F. Fan;Jay Guoxu Liu;Shu Xu","doi":"10.1109/TED.2024.3521954","DOIUrl":"https://doi.org/10.1109/TED.2024.3521954","url":null,"abstract":"Quantum dot-converted light-emitting diodes (Qc-LEDs) have attracted significant interest due to their superior color performance in advanced lighting and display applications. Despite this, their efficiency is often compromised by heat-induced fluorescence quenching of quantum dots (QDs). Boron nitride nanoplates (BNPs) are known for their excellent heat dissipation properties, making them a promising additive to reduce heat accumulation in Qc-LEDs. However, BNPs also possess high light reflectivity that traps light within the device, diminishing their overall effectiveness. In this study, we explore the comprehensive optical and thermal impacts of BNPs on Qc-LEDs through simulations and experiments. Results show that 1 wt% BNPs strike a suitable balance, reducing temperature without significantly affecting light extraction efficiency. In contrast, 3 wt% BNPs lower the operating temperature of Qc-LEDs from <inline-formula> <tex-math>$95.3~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$65.9~^{circ }$ </tex-math></inline-formula>C at 150 mA but also decrease light intensity by 22% compared to Qc-LEDs with 1 wt% BNPs. This research provides valuable insights for optimizing Qc-LED performance using BNPs and other thermally conductive 2-D nanoadditives.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"761-768"},"PeriodicalIF":2.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Broadband 4H-SiC Photodetectors With Gold Nanoparticles: Expanding Sensitivity From UV to SWIR Spectrum

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-07 DOI: 10.1109/TED.2024.3522213

Lulu Geng;Guohui Li;Wenbin Sun;Xianyong Yan;Wenyan Wang;Ting Ji;Zhihui Chen;Kaili Mao;Yuan Tian;Yanxia Cui

{"title":"Enhancing Broadband 4H-SiC Photodetectors With Gold Nanoparticles: Expanding Sensitivity From UV to SWIR Spectrum","authors":"Lulu Geng;Guohui Li;Wenbin Sun;Xianyong Yan;Wenyan Wang;Ting Ji;Zhihui Chen;Kaili Mao;Yuan Tian;Yanxia Cui","doi":"10.1109/TED.2024.3522213","DOIUrl":"https://doi.org/10.1109/TED.2024.3522213","url":null,"abstract":"4H-silicon carbide (4H-SiC) is promising for photodetectors (PDs) capable of operating at high voltages and elevated temperatures. However, the wide bandgap of 4H-SiC (3.26 eV) restricts its applications to the ultraviolet (UV) range below 400 nm. It is essential to develop 4H-SiC PDs with a broadband response covering the UV to short-wavelength infrared (SWIR) spectrum. This study demonstrates a 4H-SiC broadband PD with sensitivity extending from UV to SWIR range up to 2200 nm. The superior performance is attributed to the presence of numerous defect centers forming deep energy levels within the 4H-SiC bandgap, which allows the absorption of visible (VIS) and SWIR photons with energies lower than the bandgap. Moreover, the incorporation of thermally annealed gold nanoparticles (Au NPs) induces localized plasmonic resonance, significantly enhancing the photocurrent over a broadband wavelength range while maintaining the dark current. This leads to superior weak light detection capabilities for the plasmonic device compared to the reference device without Au NPs. At the enhancement peak (under 860-nm laser illumination), the plasmonic device achieves a minimum detectable power density of <inline-formula> <tex-math>$0.488~mu $ </tex-math></inline-formula>W/cm2. Notably, the plasmonic PD exhibits a 3260% increase in the photo-to-dark current ratio (PDCR), with an external quantum efficiency (EQE) enhancement factor reaching a maximum of 3166%. These results lay a foundation for advancing the development of UV-SWIR broadband SiC PDs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 2","pages":"784-790"},"PeriodicalIF":2.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation and Establishment of an Empirical Model for the Dynamic Ron Effect of GaN Power Device in Hard Switching Mode 评估和建立硬开关模式下 GaN 功率器件动态罗恩效应的经验模型

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-07 DOI: 10.1109/TED.2024.3523458

Shaoyu Sun;Xu Du;Ling Xia;Wengang Wu

{"title":"Evaluation and Establishment of an Empirical Model for the Dynamic Ron Effect of GaN Power Device in Hard Switching Mode","authors":"Shaoyu Sun;Xu Du;Ling Xia;Wengang Wu","doi":"10.1109/TED.2024.3523458","DOIUrl":"https://doi.org/10.1109/TED.2024.3523458","url":null,"abstract":"In recent years, the rapid popularization of GaN HEMT devices in power applications has made the traditional GaN static SPICE model unable to meet the requirements of high-voltage and high-frequency circuit design, due to the dynamic on-resistance (<inline-formula> <tex-math>${R} _{text {on}}$ </tex-math></inline-formula>) effect. In this article, we evaluate the dynamic <inline-formula> <tex-math>${R} _{text {on}}$ </tex-math></inline-formula> effect of a commercial 100-V Schottky-type p-GaN HEMT in the hard switching mode and propose an empirical dynamic model. The pulse test results show that the gate-to-drain voltage stress is the main cause of the dynamic <inline-formula> <tex-math>${R} _{text {on}}$ </tex-math></inline-formula> effect. The peak electric field located at the AlGaN barrier layer and channel of the device will cause threshold voltage positive shift and hot electron effect. These two physical mechanisms that cause the dynamic <inline-formula> <tex-math>${R} _{text {on}}$ </tex-math></inline-formula> effect are verified by the TCAD simulation. Meanwhile, we calculated the contribution of the two physical mechanisms to the dynamic <inline-formula> <tex-math>${R} _{text {on}}$ </tex-math></inline-formula> under different operation conditions. Based on the test and analysis results, the equivalent circuit is added to the static SPICE model of the device. The proposed empirical model could well simulate the dynamic <inline-formula> <tex-math>${R} _{text {on}}$ </tex-math></inline-formula> characteristic and switching behavior of the device in hard switching mode.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"987-995"},"PeriodicalIF":2.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical and Experimental Investigations on Input Couplers for a G-Band Gyro-TWT

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-01-06 DOI: 10.1109/TED.2024.3523264

Taotao Mao;Zhi Yi;Tao Song;Chen Zhang;Xu Qi;Peisheng Liang;Chenghui Zhu;Yuxuan Chai;Ke Chen;Jiao Jiao;Na Yao;Kaichun Zhang;Zhenhua Wu;Yanyu Wei;Yubin Gong;Wei Wang;Diwei Liu

引用次数: 0