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Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices 电气和电子工程师学会电子器件期刊》智能传感器系统特刊
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI: 10.1109/TED.2024.3463275
{"title":"Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices","authors":"","doi":"10.1109/TED.2024.3463275","DOIUrl":"https://doi.org/10.1109/TED.2024.3463275","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 10","pages":"6471-6472"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10691657","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142316389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bridging the Data Gap in Photovoltaics with Synthetic Data Generation 通过合成数据生成弥补光伏领域的数据差距
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI: 10.1109/TED.2024.3463273
{"title":"Bridging the Data Gap in Photovoltaics with Synthetic Data Generation","authors":"","doi":"10.1109/TED.2024.3463273","DOIUrl":"https://doi.org/10.1109/TED.2024.3463273","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 10","pages":"6469-6470"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10691388","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142316348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Blank Page 空白页
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI: 10.1109/TED.2024.3463279
{"title":"Blank Page","authors":"","doi":"10.1109/TED.2024.3463279","DOIUrl":"https://doi.org/10.1109/TED.2024.3463279","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 10","pages":"C4-C4"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10691649","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142316374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication 基于氮化镓的独立式微型 LED，具有 GHz 带宽和低效率骤降，适用于可见光通信
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI: 10.1109/TED.2024.3456770
Jinpeng Huang;Guobin Wang;Handan Xu;Feifan Xu;Ting Zhi;Wenjuan Chen;Yimeng Sang;Dongqi Zhang;Junchi Yu;Honghui He;Ke Xu;Pengfei Tian;Tao Tao;Bin Liu;Rong Zhang
{"title":"GaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication","authors":"Jinpeng Huang;Guobin Wang;Handan Xu;Feifan Xu;Ting Zhi;Wenjuan Chen;Yimeng Sang;Dongqi Zhang;Junchi Yu;Honghui He;Ke Xu;Pengfei Tian;Tao Tao;Bin Liu;Rong Zhang","doi":"10.1109/TED.2024.3456770","DOIUrl":"https://doi.org/10.1109/TED.2024.3456770","url":null,"abstract":"Visible light communication (VLC) based on micro light-emitting diodes (micro-LEDs) offers energy-efficient methods for explosive data transmission. However, the severe quantum-confined stark effect (QCSE) and carrier localization make it challenging for micro-LEDs to achieve both high modulation bandwidth and high external quantum efficiency (EQE). Herein, GaN-based freestanding micro-LEDs with varying quantum barrier (QB) thicknesses were designed and fabricated. The thinner QBs effectively reduce the QCSE and improve carrier transport, resulting in high modulation bandwidth and less efficiency droop. Homoepitaxial growth of micro-LEDs gives birth to further improved modulation bandwidth and optical power due to lower defect density and improved thermal dispassion. The −3 dB bandwidths of the 10 and \u0000<inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>\u0000m-diameter freestanding micro-LEDs exceed 1.03 GHz and 823 MHz, respectively. A high optical power of 5.54 mW and a data rate of 4.08 Gb/s, while maintaining a relatively high EQE of 4.17%, were achieved on \u0000<inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>\u0000m-diameter devices. The proposed methods systematically improve the modulation bandwidth and luminescence efficiency, demonstrating the significant potential for free-space VLC.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6826-6830"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET 表征 GFET 输出电阻的泰勒级近似模型
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI: 10.1109/TED.2024.3458928
Xiomara Ribero-Figueroa;Anibal Pacheco-Sanchez;Tzu-Jung Huang;David Jiménez;Ivan Puchades;Reydezel Torres-Torres
{"title":"A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET","authors":"Xiomara Ribero-Figueroa;Anibal Pacheco-Sanchez;Tzu-Jung Huang;David Jiménez;Ivan Puchades;Reydezel Torres-Torres","doi":"10.1109/TED.2024.3458928","DOIUrl":"https://doi.org/10.1109/TED.2024.3458928","url":null,"abstract":"The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect transistor (GFET) is linearized here using a Taylor series approximation. This simplification is shown to be valid from the magnitudes of the gate voltage not significantly higher than the Dirac voltage, and it enables the analytical determination of the transconductance parameter, the voltage related to residual charges, and a bias-independent series resistance of the GFET. Furthermore, a continuous representation of the device’s static response is achieved when substituting the extracted parameters into the model, regardless the transfer characteristic symmetry with respect to the Dirac voltage.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7204-7207"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Electron Devices Information for Authors 电气和电子工程师学会《电子器件学报》（IEEE Transactions on Electron Devices）为作者提供的信息
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI: 10.1109/TED.2024.3463277
{"title":"IEEE Transactions on Electron Devices Information for Authors","authors":"","doi":"10.1109/TED.2024.3463277","DOIUrl":"https://doi.org/10.1109/TED.2024.3463277","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 10","pages":"C3-C3"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10691646","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142316477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metal Interlayer Insertion for Grain Engineering in Ferroelectric Hf₀.₅Zr₀.₅O₂ 铁电 Hf₀.₅Zr₀.₅O₂中用于晶粒工程的金属层间插入技术
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI: 10.1109/TED.2024.3447614
Anh-Duy Nguyen;Si-Un Song;An Hoang Thuy Nguyen;Cuong-Manh Nguyen;Ye-Eun Hong;Yeongshin Ham;Jae-Kyeong Kim;Jong-Hwa Baek;Kyungsoo Hwang;Geon Park;Hyun Soo Kim;Hoyeon Sin;Rino Choi
{"title":"Metal Interlayer Insertion for Grain Engineering in Ferroelectric Hf₀.₅Zr₀.₅O₂","authors":"Anh-Duy Nguyen;Si-Un Song;An Hoang Thuy Nguyen;Cuong-Manh Nguyen;Ye-Eun Hong;Yeongshin Ham;Jae-Kyeong Kim;Jong-Hwa Baek;Kyungsoo Hwang;Geon Park;Hyun Soo Kim;Hoyeon Sin;Rino Choi","doi":"10.1109/TED.2024.3447614","DOIUrl":"https://doi.org/10.1109/TED.2024.3447614","url":null,"abstract":"Since its discovery in the previous decade, ferroelectricity (FE) in zirconium-doped hafnium oxide (HZO) has been studied intensively. With HZO being incorporated in multiple applications, grain size reduction has become essential to enhance the ferroelectric performance and scalability. A common method is implementing a dielectric interlayer (IL) in the middle of HZO films while sacrificing operating power caused by voltage drop across the additional material. This research implemented W and Mo metal ILs in the middle of the HZO stack to prevent grain growth. The effects of the ILs on ferroelectric performance were studied using metal-ferroelectric–insulator-silicon structure. Transmission electron microscopy (TEM) and grazing-incidence X-ray diffraction were used to examine the grain formation in HZO. The results show that metal ILs have successfully improved the ferroelectric performance by suppressing the nonferroelectric monoclinic phase while promoting the formation of the orthorhombic phase. The sample with W IL acting as electrodes for both upper and under HZO thin films was more resilient to fatigue than that with the Mo IL. Hence, W metal ILs can enable HZO implementation in a wider range of application.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6647-6651"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Narrow Dual-Band Photodetector Based on Cs2AgBiBr6 Lead-Free Double Perovskite Single Crystal 基于 Cs2AgBiBr6 无铅双包晶单晶的窄双波段光电探测器
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI: 10.1109/TED.2024.3457548
Sampati Rao Sridhar;Naveen Kumar Tailor;Soumitra Satapathi;Brijesh Kumar
{"title":"Narrow Dual-Band Photodetector Based on Cs2AgBiBr6 Lead-Free Double Perovskite Single Crystal","authors":"Sampati Rao Sridhar;Naveen Kumar Tailor;Soumitra Satapathi;Brijesh Kumar","doi":"10.1109/TED.2024.3457548","DOIUrl":"https://doi.org/10.1109/TED.2024.3457548","url":null,"abstract":"Narrowband photodetectors play a vital role in imaging and sensing applications. Due to exceptional optoelectronic properties and tunable bandgap, perovskites are highly suitable for realizing narrowband photodetection. In this work, a narrow dual-band photodetector based on lead-free perovskite single crystal (PSC) Cs2AgBiBr6 is fabricated. The detector showed a narrowband response spectrum with dual bands with a peak response at 530 and 590 nm. A detectivity of 109 Jones with a full-width half maximum (FWHM) of 42 nm is achieved in both bands. The detector showed a rise time (\u0000<inline-formula> <tex-math>${t}_{text {r}}$ </tex-math></inline-formula>\u0000) of 92 ms and a fall time (\u0000<inline-formula> <tex-math>${t}_{text {f}}$ </tex-math></inline-formula>\u0000) of 271 ms under 530 nm illumination, along with a stable performance up to 25 days in ambient conditions. This attempt demonstrates a stable narrow dual-band photodetection using a lead-free Cs2AgBiBr6 double PSC for multispectral imaging applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6838-6842"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE ELECTRON DEVICES SOCIETY IEEE 电子设备协会
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI: 10.1109/TED.2024.3463271
{"title":"IEEE ELECTRON DEVICES SOCIETY","authors":"","doi":"10.1109/TED.2024.3463271","DOIUrl":"https://doi.org/10.1109/TED.2024.3463271","url":null,"abstract":"","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 10","pages":"C2-C2"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10691650","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142320483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Leakage Current and Breakdown Characteristics of Isolation in Gallium Nitride Lateral Power Devices 氮化镓侧向功率器件的泄漏电流和隔离击穿特性
IF 2.9 2区 工程技术
IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI: 10.1109/TED.2024.3458945
Mansura Sadek;Sang-Woo Han;Anusmita Chakravorty;Jesse T. Kemmerling;Rian Guan;Jianan Song;Yixin Xiong;James Lundh;Karl D. Hobart;Travis J. Anderson;Rongming Chu
{"title":"Leakage Current and Breakdown Characteristics of Isolation in Gallium Nitride Lateral Power Devices","authors":"Mansura Sadek;Sang-Woo Han;Anusmita Chakravorty;Jesse T. Kemmerling;Rian Guan;Jianan Song;Yixin Xiong;James Lundh;Karl D. Hobart;Travis J. Anderson;Rongming Chu","doi":"10.1109/TED.2024.3458945","DOIUrl":"https://doi.org/10.1109/TED.2024.3458945","url":null,"abstract":"In gallium nitride (GaN) lateral power devices with advanced E-field management, isolation becomes a bottleneck for achieving higher breakdown voltage (BV). To understand the physical mechanism of isolation, the experimental analysis of isolation structures is done in this work. This article presents the measured leakage current and breakdown characteristics of isolation structures, compatible with lateral devices. For unimplanted isolation structures, leakage is injection barrier limited and breakdown is by surface punchthrough. BV has a quadratic dependence on the isolation length. Ion implantation introduces trap-limited hopping conduction, marked by the exponentially field-dependent conductance. After implantation, despite an increase in leakage current, BV increases drastically. The dependence of BV on isolation length changes from quadratic in unimplanted isolation to linear in implanted one due to flattening of E-field. To achieve high BV in GaN lateral power devices, the implanted isolation structure is preferred at the cost of high isolation leakage.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6915-6920"},"PeriodicalIF":2.9,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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