IEEE Transactions on Electron Devices最新文献_第9页

Widening the High-Entropy Operating Window of Perpendicular Magnetic Tunnel Junction TRNGs via Multibit xor Whitening 利用多比特xor白化技术拓宽垂直磁隧道结TRNGs的高熵操作窗口

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-07-29 DOI: 10.1109/TED.2026.3715464

Qi Jia;Shannon Egan;Yang Lv;Jian-Ping Wang

{"title":"Widening the High-Entropy Operating Window of Perpendicular Magnetic Tunnel Junction TRNGs via Multibit xor Whitening","authors":"Qi Jia;Shannon Egan;Yang Lv;Jian-Ping Wang","doi":"10.1109/TED.2026.3715464","DOIUrl":"https://doi.org/10.1109/TED.2026.3715464","url":null,"abstract":"Perpendicular magnetic tunnel junctions (pMTJs) are promising entropy sources for hardware true random number generators (TRNGs) owing to their intrinsic stochastic switching and CMOS compatibility. However, it is challenging to tune the switching probability to the ideal 50% for uniform randomness, as the stochastic switching process is highly sensitive to device variations and environmental conditions. Here, we systematically evaluate the robustness of entropy generated by magnetic tunnel junction (MTJ) stochastic switching events under varying operating conditions and assess changes in randomness quality after multibit <sc>xor postprocessing. By sweeping pulse widths from 2 to 10 ns (corresponding to average switching probabilities from ~0% to 90%), we show that increasing the <sc>xor width significantly expands the high-entropy operating range. The stable entropy window broadens from a point near 50% for raw outputs and 2-bit <sc>xor to a range of 16%–84% with 16-bit <sc>xor. In addition, overlapping <sc>xor windows can increase throughput by up to <inline-formula> <tex-math>$2.67times $ </tex-math></inline-formula> without degrading entropy quality across the stable range. These results demonstrate that high-degree <sc>xor whitening enables bias-tolerant, feedback-free entropy generation and provides a practical route toward pMTJ TRNG designs for cryptographic applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5583-5590"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Transactions on Electron Devices Information for Authors IEEE电子器件信息汇刊

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-09-07 DOI: 10.1109/TED.2026.3723703

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Mechanism and Modeling of Threshold Voltage Drift in SiC MOSFETs Under Coupled Gate Switching Stress and Total Ionizing Dose Irradiation 栅极开关应力和总电离剂量耦合照射下SiC mosfet阈值电压漂移机理及建模

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-07-22 DOI: 10.1109/TED.2026.3713122

Jiahao Hu;Xiaochuan Deng;Tao Xu;Hanqing Zhao;Gu Gong;Xuan Li;Bo Zhang

{"title":"Mechanism and Modeling of Threshold Voltage Drift in SiC MOSFETs Under Coupled Gate Switching Stress and Total Ionizing Dose Irradiation","authors":"Jiahao Hu;Xiaochuan Deng;Tao Xu;Hanqing Zhao;Gu Gong;Xuan Li;Bo Zhang","doi":"10.1109/TED.2026.3713122","DOIUrl":"https://doi.org/10.1109/TED.2026.3713122","url":null,"abstract":"This article investigates the mechanism of threshold voltage drift (<inline-formula> <tex-math>$Delta {V}_{text {th}}text {)}$ </tex-math></inline-formula> in planar-gate (PG) and asymmetric trench-gate (AT) silicon carbide MOSFETs (SiC MOSFETs) under coupled gate switching stress (GSS) and total ionizing dose (TID) irradiation and proposes a physics-based <inline-formula> <tex-math>$Delta {V}_{text {th}}$ </tex-math></inline-formula> model. The coupled effect is reflected in altered hole trapping kinetics and additional trapping of negative charge. By subtracting the GSS-only contribution, the irradiation-induced <inline-formula> <tex-math>$Delta {V}_{text {th}}$ </tex-math></inline-formula> under switching bias is extracted for modeling. A first-order saturation–neutralization formulation is derived from a trapping/neutralization rate equation to describe positive charge buildup (PCB) and neutralization within each switching cycle. The irradiation model is combined with a power-law GSS model to predict the total <inline-formula> <tex-math>$Delta {V}_{text {th}}$ </tex-math></inline-formula>, and the resulting coefficient of determination (<inline-formula> <tex-math>${R}^{{2}}text {)}$ </tex-math></inline-formula> exceeds 0.95 for all tested devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5445-5451"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Enhancing Gate Reliability of p-GaN Gate HEMTs by Segmented-Gate Contact Structures 采用分段栅极接触结构提高p-GaN栅极hemt的栅极可靠性

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-08-06 DOI: 10.1109/TED.2026.3717556

Yilong Lei;Ting Zhou;Lili Zhai;Zhibo Cheng;Haonan Jiang;Qingping Xiao;Yi Wang;Liang Wang;Shenglei Zhao;Xi Jiang;Zhihong Liu;Jincheng Zhang;Yue Hao;Shuzhen You

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Heterogeneous Integration of 1700 PPI Green GaN Micro-LEDs Based on Cu--Ni--Sn Bumps 基于Cu—Ni—Sn凸点的1700 PPI绿色GaN微型led的异质集成

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-07-22 DOI: 10.1109/TED.2026.3712328

Hao Fu;Zhu Yang;Fei Wang;Xinyi Wang;Haojie Zhou;Xiaoxiao Ji;Luqiao Yin;Xiuzhen Lu;Jianhua Zhang

{"title":"Heterogeneous Integration of 1700 PPI Green GaN Micro-LEDs Based on Cu--Ni--Sn Bumps","authors":"Hao Fu;Zhu Yang;Fei Wang;Xinyi Wang;Haojie Zhou;Xiaoxiao Ji;Luqiao Yin;Xiuzhen Lu;Jianhua Zhang","doi":"10.1109/TED.2026.3712328","DOIUrl":"https://doi.org/10.1109/TED.2026.3712328","url":null,"abstract":"The heterogeneous integration of green GaN Micro-LED arrays with Cu–Ni–Sn bumps is realized in this article. The systematic optimization of bonding process parameters, including bonding temperature, force, and time, shows that the device bonded at <inline-formula> <tex-math>$280~^{circ }$ </tex-math></inline-formula>C, 40 kg, and 5 min achieves the best performance. The electrical, optical, and mechanical reliability of Cu–Ni–Sn bumps bonded device is investigated through <inline-formula> <tex-math>$85~^{circ }$ </tex-math></inline-formula>C/85% RH aging test and compared to Cu–Sn bumps bonded device. The Cu–Ni–Sn bumps bonded device exhibits better I–V characteristics, excellent spectral stability, and higher shear strength after aging test, with only 18.26% decrease in brightness. The cross section SEM image of Cu–Sn and Cu–Ni–Sn bumps bonded devices shows that cracks were generated inside Cu–Sn bumps during the aging test, while the solder layer of Cu–Ni–Sn bumps is dense with no voids inside, which indicates that the Ni barrier layer effectively suppresses interdiffusion and void formation. The critical role of the Ni barrier layer in enhancing the long-term reliability of devices is confirmed.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5614-5619"},"PeriodicalIF":3.6,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148903225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Fluorine Plasma-Treated ITO Transistors: Reliability and Temperature Dependence From 77 to 375 K 氟等离子体处理ITO晶体管：可靠性和温度依赖性从77到375 K

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-07-08 DOI: 10.1109/TED.2026.3706452

Xuanqi Chen;Yuye Kang;Gan Liu;Wei Shi;Xiaolin Wang;Qiwen Kong;Yuxuan Wang;Rui Shao;Bich-Yen Nguyen;Gengchiau Liang;Kaizhen Han;Xiao Gong

{"title":"Fluorine Plasma-Treated ITO Transistors: Reliability and Temperature Dependence From 77 to 375 K","authors":"Xuanqi Chen;Yuye Kang;Gan Liu;Wei Shi;Xiaolin Wang;Qiwen Kong;Yuxuan Wang;Rui Shao;Bich-Yen Nguyen;Gengchiau Liang;Kaizhen Han;Xiao Gong","doi":"10.1109/TED.2026.3706452","DOIUrl":"https://doi.org/10.1109/TED.2026.3706452","url":null,"abstract":"In this work, we demonstrated the fluorine (F) plasma-treated indium–tin–oxide field-effect transistors (ITO:F FETs) with channel lengths ranging from 40 nm to <inline-formula> <tex-math>$10~mu $ </tex-math></inline-formula>m. Their electrical characteristics and dark-state positive-bias-temperature-instability (PBTI) behavior were systematically investigated over a broad temperature range from 77 to 375 K. Our results show that the fluorine plasma treatment effectively tunes the threshold voltage (<inline-formula> <tex-math>${V}_{text {TH}}$ </tex-math></inline-formula>) of indium–tin–oxide (ITO) field-effect transistors (FETs) while preserving strong drive current and normal switching behavior, consistent across devices with different channel lengths. Notably, the 40-nm ITO:F FET demonstrates excellent dark-state PBTI stability. After PBTI stressing up to 10 ks under an overdrive field (<inline-formula> <tex-math>${E}_{text {OX}}$ </tex-math></inline-formula>) of 2.5 MV/cm, the ITO:F FET exhibits threshold voltage shifts (<inline-formula> <tex-math>$Delta {V}_{text {TH}}$ </tex-math></inline-formula>) of 42 mV at 300 K. These findings highlight the potential of fluorine plasma treatment to improve the electrical characteristics and PBTI stability of ITO FETs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5099-5105"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Variable Gradient Mg-Doped p-GaN/AlGaN/GaN HEMT With Low Gate Leakage Current 低栅漏电流变梯度mg掺杂p-GaN/AlGaN/GaN HEMT

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-25 DOI: 10.1109/TED.2026.3703765

Kuo Zhang;Yunlong He;Chong Wang;Kai Liu;Jiahui Ren;Yuhan Luo;Yuchun Wu;Wentao Zhang;Xuefeng Zheng;Xiaohua Ma;Yue Hao

{"title":"Variable Gradient Mg-Doped p-GaN/AlGaN/GaN HEMT With Low Gate Leakage Current","authors":"Kuo Zhang;Yunlong He;Chong Wang;Kai Liu;Jiahui Ren;Yuhan Luo;Yuchun Wu;Wentao Zhang;Xuefeng Zheng;Xiaohua Ma;Yue Hao","doi":"10.1109/TED.2026.3703765","DOIUrl":"https://doi.org/10.1109/TED.2026.3703765","url":null,"abstract":"In this work, we propose a novel variable gradient Mg-doped p-GaN/AlGaN/GaN high-electron-mobility transistor (VD-HEMT) with a suppressed gate leakage current and enhanced gate reliability. The low-doped p-GaN layers at the top and bottom effectively weaken the high electric field on the surface of p-GaN and suppress the hole injection currents at the metal/p-GaN Schottky junction and the p-GaN/AlGaN/GaN p-i-n junction, while also inhibiting Mg diffusion toward the channel. The intermediate high-doped p-GaN layer blocks and recombines electrons overflowing from the channel, effectively reducing hot electron bombardment and impact ionization in the Schottky depletion region. The VD-HEMT achieved a low gate leakage of <inline-formula> <tex-math>$text{3.6}times text{10}^{-text{5}}$ </tex-math></inline-formula> mA/mm at <inline-formula> <tex-math>$textit{V}_{text{G}}=text{9}$ </tex-math></inline-formula> V, a high gate breakdown voltage of 19.7 V, and a maximum gate drive voltage of 9.46 V for a ten-year lifetime with a 63.2% gate failure rate. In addition, the high-doped p-GaN layer combined with the thin AlGaN barrier effectively increases the threshold voltage to 2.85 V without significant degradation in <sc>on-resistance or breakdown voltage, demonstrating great potential for high-reliability power electronics applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5154-5160"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-Mode Perovskite/GaN Tandem LEDs With Interlayer-Enabled Voltage-Dependent Color Tuning 双模钙钛矿/GaN串联led与层间启用电压依赖的颜色调谐

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-10 DOI: 10.1109/TED.2026.3699490

Yunfang Tong;Hao Min;Ting Zhi;Zhe Zhuang;Zili Xie;Rongrong Dou;Tao Tao;Bin Liu

{"title":"Dual-Mode Perovskite/GaN Tandem LEDs With Interlayer-Enabled Voltage-Dependent Color Tuning","authors":"Yunfang Tong;Hao Min;Ting Zhi;Zhe Zhuang;Zili Xie;Rongrong Dou;Tao Tao;Bin Liu","doi":"10.1109/TED.2026.3699490","DOIUrl":"https://doi.org/10.1109/TED.2026.3699490","url":null,"abstract":"Metal halide perovskites have emerged as promising candidates for light-emitting diodes (LEDs) owing to their superior optoelectronic properties and solution processability. However, the fabrication of perovskite-based multicolor or white LEDs remains challenging due to the difficulty in depositing multiple emissive layers without damaging underlying films. Here, we demonstrate a hybrid Pe-GaN tandem LED by vertically integrating a solution-processed perovskite LED (PeLED) with a commercial GaN LED using an indium tin oxide (ITO) interconnecting layer. A two-step annealing strategy is employed to optimize the perovskite film quality, yielding significantly enhanced photoluminescence and improved film morphology. Benefiting from the optimized perovskite layer, the PeLED unit achieves substantially enhanced electroluminescence (EL) performance, with a maximum external quantum efficiency (EQE) of 10.2% and a high luminance of 91,233 cd <inline-formula> <tex-math>${mathrm {m}}^{-{2}}$ </tex-math></inline-formula>. Furthermore, by employing two different interconnecting layer structures, we achieve voltage-controlled color tunability with distinct spectral evolution behaviors. By changing the interconnecting layer from ITO to SnO2 or Ag/SnO2, we transition from independent unit control to series-connected color tuning. This work introduces interlayer design as a new degree of freedom for expanding the color palette of Pe-GaN tandem LEDs.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"5005-5009"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Cox and Strack Measurements of Contact Resistivity for Low-Temperature Ohmic Contacts on the N-Face of GaN Substrates 氮化镓衬底n面低温欧姆接触接触电阻率的Cox和Strack测量

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-23 DOI: 10.1109/TED.2026.3704528

Daniel J. Rogers;Jeramy R. Dickerson;Jonathan J. Wierer

{"title":"Cox and Strack Measurements of Contact Resistivity for Low-Temperature Ohmic Contacts on the N-Face of GaN Substrates","authors":"Daniel J. Rogers;Jeramy R. Dickerson;Jonathan J. Wierer","doi":"10.1109/TED.2026.3704528","DOIUrl":"https://doi.org/10.1109/TED.2026.3704528","url":null,"abstract":"Contact resistivity measurements of ohmic contacts to the nitrogen face (N-face) of n-type GaN substrates are determined using the Cox–Strack method. The contacts consist of sputtered Ti/W formed on two substrates with root-mean-square (rms) roughness of ~100 nm (rough) and ~5 nm (smooth) on the N-face. This is followed by the e-beam-evaporated Al and Al/Ni/Au onto the rough and smooth samples, respectively. The samples are tested as deposited and annealed at <inline-formula> <tex-math>$300^{circ }$ </tex-math></inline-formula>C, <inline-formula> <tex-math>$400~^{circ }$ </tex-math></inline-formula>C, and <inline-formula> <tex-math>$500~^{circ }$ </tex-math></inline-formula>C for 10 min. The contact resistivity for the as-deposited, smooth sample is <inline-formula> <tex-math>$1.1times 10^{-{4}}$ </tex-math></inline-formula> <inline-formula> <tex-math>$Omega$ </tex-math></inline-formula>-cm2, and that for the rough sample after a <inline-formula> <tex-math>$500~^{circ }$ </tex-math></inline-formula>C anneal is <inline-formula> <tex-math>$1.9times 10^{-5}~Omega {cdot }text {cm}^{2}$ </tex-math></inline-formula>. For all other conditions, they are Schottky. The barrier height of the rough sample is 254 meV, assuming the thermionic field emission (TFE) model. This work highlights the utility and limitations of the Cox–Strack method for determining low contact resistivities in vertical semiconductor devices and for forming these contacts at low temperatures, thereby easing process constraints.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4673-4678"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Decoupling the Competing Degradation Mechanisms in SiC MOSFETs Under Repetitive Avalanche: From Charge Trapping to Package Fatigue 重复雪崩下SiC mosfet竞争退化机制的解耦：从电荷捕获到封装疲劳

IF 3.6 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-06-29 DOI: 10.1109/TED.2026.3697700

Yifan Song;Kun Ma;Yameng Sun;Xun Liu;Zhaofu Zhang;Yang Zhou;Sheng Liu

{"title":"Decoupling the Competing Degradation Mechanisms in SiC MOSFETs Under Repetitive Avalanche: From Charge Trapping to Package Fatigue","authors":"Yifan Song;Kun Ma;Yameng Sun;Xun Liu;Zhaofu Zhang;Yang Zhou;Sheng Liu","doi":"10.1109/TED.2026.3697700","DOIUrl":"https://doi.org/10.1109/TED.2026.3697700","url":null,"abstract":"Silicon carbide (SiC) MOSFETs are crucial in high-power density applications, but their long-term reliability under repetitive avalanche stress remains a significant concern. The evolution of <sc>on-resistance (<inline-formula> <tex-math>${R}_{text {DS}(textit {on})}$ </tex-math></inline-formula>) under such stress is complex and has been widely debated. Existing studies often rely on post-stress electrical characterization and therefore cannot directly resolve the transient thermal driver of degradation or experimentally decouple the competing device-level and package-level mechanisms. This approach allows the stress-dependent turning point of <inline-formula> <tex-math>${R}_{textit {DS}(textit {on})}$ </tex-math></inline-formula> to be intentionally shifted, enabling the experimental decoupling of early-stage hole-injection-induced resistance reduction in the junction field-effect transistor (JFET) region from late-stage thermomechanical-fatigue-induced increase at the bond-wire heel. Calibrated Technology Computer-Aided Design (TCAD), finite element analysis (FEA), and decapsulation-based failure analysis are further used to validate the proposed mechanism transition. These results establish a unified mechanistic framework linking stress severity, turning-point evolution, and failure mode, and provide a basis for more reliable degradation benchmarking and State-of-Health monitoring.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 8","pages":"4756-4763"},"PeriodicalIF":3.6,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148699565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0