Effects of Gate Offset on Negative Capacitance Field-Effect Transistors With Self-Heating Effect

We have investigated the performance of gate-all-around negative-capacitance field effect transistors (GAA-NCFETs) with self-heating effects (SHEs) by self-consistently solving nonequilibrium Green’s function (NEGF), time-dependent Ginzburg-Landau (TDGL) equation, Poisson’s equation, and heat equation. The local hot spot caused by SHE degrades the performance of the ferroelectric material, resulting in a reduction of the on current ( ${I}_{\mathrm {\scriptstyle {ON}}}$ ) by approximately 30%. To mitigate this thermal degradation, a gate offset structure is proposed in this work, which leads to an improvement in the subthreshold swing (SS) and an increase in the ${I}_{\mathrm {\scriptstyle {ON}}}$ . The gate offset is also effective in reducing the drain-induced barrier rising, but it decreases the cut-off frequency, presenting a trade-off relationship between the figure of merit (FOM).