Low-Frequency Noise Investigation of Organic Field-Effect Transistors Based on N-Type Donor-Acceptor Conjugated Copolymer

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-15 DOI:10.1109/TED.2025.3555262

Lijian Chen;Quanhua Chen;Hong Zhu;Walid Boukhili;Binhong Li;Xing Zhao;Chee Leong Tan;Huabin Sun;Stefan Mannsfeld;Yong Xu;Dongyoon Khim

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Abstract

Organic field-effect transistors (OFETs) based on n-type donor-acceptor (D-A) conjugated copolymer are at the forefront of research in organic electronics. Yet, an understanding of the fundamental aspects of their charge transport, in particular the relevant traps, remains limited. In this study, we show that the low-frequency noise (LFN) of n-type OFETs based on N2200 exhibits 1/f behavior. The normalized power spectrum density of the drain current (

${I} _{\text {D}}$

), namely (

${S} _{\text {Id}}$

${I} _{\text {D}}^{{2}}$

), varies similarly as (

${g} _{\text {m}}$

${I} _{\text {D}}$

)2 with gm being the transconductance, indicating the carrier number fluctuations. Examination on the annealing temperature and air stability of the devices with different contacts using LFN reveal sizably varied trap density, conforming the correlation between performance degradation and defect states. Thus, LFN provides quantitative insight into the charge transport behind.

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基于n型施主-受主共轭共聚物的有机场效应晶体管低频噪声研究

基于n型给体-受体共轭共聚物的有机场效应晶体管（ofet）是有机电子学研究的前沿。然而，对其电荷传输的基本方面，特别是相关陷阱的理解仍然有限。在本研究中，我们发现基于N2200的n型ofet的低频噪声（LFN）表现为1/f行为。漏极电流（${I} _{\text {D}}$）的归一化功率谱密度，即（${S} _{\text {Id}}$ / ${I} _{\text {D}}^{{2}}$）的变化类似于（${g} _{\text {m}}$ / ${I} _{\text {D}}$）2， gm为跨导，表示载流子数的波动。利用LFN对不同触点器件的退火温度和空气稳定性进行测试，发现陷阱密度变化较大，符合性能下降与缺陷状态之间的相关性。因此，LFN提供了对背后电荷传输的定量洞察。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.