ESD应用中保持电压平衡的双向可控硅布局优化

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-15 DOI:10.1109/TED.2025.3558487

Feibo Du;Ruibo Chen;Yi Liu;Fei Hou;Xiaoyu Dong;Dongxing Gao;Jiaqiang Zheng;Zihan Zheng;Yimu Yang;Xuyao Wang;Zhiwei Liu

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引用次数: 0

摘要

由于衬底保护环的存在，高压（HV）双向硅控整流器（DDSCR）的反向保持电压通常会降低到很低的水平。本文提出了两种对称双指布局的DDSCR （DDSCR- df1和DDSCR- df2）来抑制负保持电压的退化。实验结果表明，通过全方位抑制p型保护环（PGR）相关的寄生电流通路，DDSCR- df2可以有效屏蔽衬底寄生效应，从而恢复DDSCR内核固有的高保持电压特性。此外，本文提出的双指布局配置可以扩展到现有的各种高压ddscr，从而为高压静电放电（ESD）工程提供了一种非常有用的布局优化方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Layout Optimization of Dual-Directional SCR for Holding Voltage Equilibrium in ESD Applications

The reverse holding voltage of high-voltage (HV) dual-directional silicon-controlled rectifier (DDSCR) is usually degraded to a very low level due to the ubiquitous substrate guard ring. In this article, two symmetrical dual-finger layout configurations of DDSCR (DDSCR-DF1 and DDSCR-DF2) are proposed to restrain the degradation of negative holding voltage. By suppressing the parasitic current paths associated with the p-type guard ring (PGR) in all directions, experimental results indicate that the DDSCR-DF2 can effectively shield the substrate parasitic effects, thereby restoring the high holding voltage characteristic inherent in DDSCR kernel. Moreover, the dual-finger layout configuration presented here can be extended to various existing HV DDSCRs, thus providing a very useful layout optimization method for HV Electrostatic discharge (ESD) engineering.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.