Effect of Process Gradients and Process Parameter Correlation on Mismatch Modeling for Analog IC Design

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-15 DOI:10.1109/TED.2025.3558156

Colin C. McAndrew

引用次数: 0

Abstract

The effect of across-wafer process gradients on pair mismatch is generally considered to add an additional, normally distributed, stochastic component. We analyze radial process parameter distributions, which, wafer maps show, are predominant and prove that they give rise to a semi-elliptical, not normal, distribution. Additionally, we discuss different approaches to modeling parameter correlations and the geometry dependence of mismatch and present data that show how the correlation in key mismatch parameters has changed over technology generations.

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工艺梯度和工艺参数相关性对模拟IC设计中失配建模的影响

晶圆间工艺梯度对对失配的影响通常被认为是增加了一个额外的、正态分布的随机分量。我们分析了径向工艺参数分布，晶圆图显示，这是主要的，并证明它们产生半椭圆，而不是正态分布。此外，我们还讨论了建模参数相关性和错配几何依赖性的不同方法，并提供了显示关键错配参数的相关性如何随着技术的发展而变化的数据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.