A Performance-Enhanced p-Channel GaN MESFET With Tungsten Gate and High ION/ IOFF Ratio on SiC Substrate Operational at 525 K

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-07-11 DOI:10.1109/TED.2025.3584327

Huake Su;Tao Zhang;Shengrui Xu;Yachao Zhang;Hongchang Tao;He Yang;Jingyu Jia;Yue Hao;Jincheng Zhang

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引用次数: 0

Abstract

In this letter, a normally-off p-channel GaN metal–semiconductor field-effect transistor (MESFET) on SiC substrate with high

${I}_{\text {ON}}$

${I}_{\text {OFF}}$

ratio and barrier-freed ohmic contact was first demonstrated. Compared to the polarization-enhanced p-GaN/AlN/AlGaN on Si substrate, the same designed epitaxial wafer on SiC substrate showed a decreased surface potential from 11 to −368 mV as well as 1.9 times lower contact resistance (

${R}_{C}\text {)}$

, modulated by dislocation-related potential. Meanwhile, high

${I}_{\text {ON}}$

${I}_{\text {OFF}}$

ratio of

$3.3\times 10^{{7}}$

, ultralow hysteresis voltage of 0.05 V, and subthreshold swing (SS) of 83 mV/dec were obtained. The well-behaved characteristics of p-channel GaN MESFET on SiC substrate with negligible turn-on voltage and high

${I}_{\text {ON}}$

${I}_{\text {OFF}}$

ratio show great potential for low-voltage complementary metal–oxide–semiconductor (CMOS) applications.

查看原文本刊更多论文

SiC衬底上具有钨栅极和高离子/ IOFF比的性能增强p沟道GaN MESFET工作在525 K

在这篇论文中，首次展示了在SiC衬底上具有高${I}_{\text {on}}$ / ${I}_{\text {OFF}}$比率和无障碍欧姆接触的常关p沟道GaN金属半导体场效应晶体管（MESFET）。与在Si衬底上极化增强的p-GaN/AlN/AlGaN相比，相同设计的SiC衬底外延片表面电位从11 mV降低到- 368 mV，接触电阻（${R}_{C}\text{）}$降低了1.9倍，由位错相关电位调制。同时，获得了${I}_{\text {ON}}$ / ${I}_{\text {OFF}}$的高比值$3.3\ × 10^{{7}}$，超低迟滞电压0.05 V，亚阈值摆幅（SS）为83 mV/dec。在SiC衬底上的p沟道GaN MESFET具有良好的特性，可以忽略导通电压和高${I}_{\text {on}}$ / ${I}_{\text {OFF}}$比值，在低压互补金属氧化物半导体（CMOS）应用中具有巨大的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.