A Photoelectric Synergistically Excited Cold-Cathode High-Frequency Radiation Source: From GHz to THz

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-07-11 DOI:10.1109/TED.2025.3584747

Dong Han;Yan Shen;Zheyu Song;Pengbin Xu;Yanlin Ke;Shuai Tang;Yu Zhang;Huanjun Chen;Ningsheng Xu;Shaozhi Deng

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引用次数: 0

Abstract

High-frequency radiation source devices based on vacuum electronics hold significant application value in high-speed wireless communication and high-resolution radar imaging. Herein, we propose a photoelectric synergistic excitation of cold cathode for high-frequency radiation source device scheme, which can generate electromagnetic waves in the GHz-to-THz frequency range without the need for complex electron beam modulation components or additional microwave feed sources. In this study, based on a carbon nanotube (CNT) cold-cathode electron gun, we designed and successfully implemented a radiation source device capable of producing 12.2-GHz electromagnetic wave output under the coexcitation of picosecond laser pulses and a static electric field, achieving a peak output power of

$22.7~\boldsymbol {\mu } $

W. Based on the strategy, a radiation source device for 1 THz has been designed, which provides an option for the development of novel high-performance miniaturized terahertz radiation sources.

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一种光电协同激发冷阴极高频辐射源：从GHz到太赫兹

基于真空电子学的高频辐射源器件在高速无线通信和高分辨率雷达成像中具有重要的应用价值。在此，我们提出了一种用于高频辐射源器件的冷阴极光电协同激发方案，该方案无需复杂的电子束调制元件或额外的微波馈源，即可产生ghz - thz频率范围内的电磁波。本研究基于碳纳米管（CNT）冷阴极电子枪，设计并成功实现了在皮秒激光脉冲和静电场共激励下产生12.2 ghz电磁波输出的辐射源器件，峰值输出功率为$22.7~\boldsymbol {\mu} $ W.基于该策略，设计了1 THz的辐射源器件。这为开发新型高性能小型化太赫兹辐射源提供了一种选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.