IEEE Transactions on Electron Devices最新文献_第6页

Enhanced Charge Transport in Organic Thin-Film Transistors Through Environmentally Benign MXene-P3HT Nanocomposites 利用环境友好型MXene-P3HT纳米复合材料增强有机薄膜晶体管中的电荷输运

IF 3.2 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-28 DOI: 10.1109/TED.2025.3589200

Radhe Shyam;Harshita Rai;Subhajit Jana;Shubham Sharma;Takaaki Manaka;Shyam S. Pandey;Rajiv Prakash

{"title":"Enhanced Charge Transport in Organic Thin-Film Transistors Through Environmentally Benign MXene-P3HT Nanocomposites","authors":"Radhe Shyam;Harshita Rai;Subhajit Jana;Shubham Sharma;Takaaki Manaka;Shyam S. Pandey;Rajiv Prakash","doi":"10.1109/TED.2025.3589200","DOIUrl":"https://doi.org/10.1109/TED.2025.3589200","url":null,"abstract":"In this work, we report the synthesis of MXene (Ti2CTX) nanobelts from its MAX (Ti2AlC) phase via hydrothermal treatment with 5 M NaOH. This is an environmentally friendly and safer alternative to traditional HF-based etching processes. This approach reduces risks to health and handling concerning HF but maintains the exfoliation quality of the MXene layers. The Ti2CTX nanobelts were then incorporated at various concentrations into poly(3-hexylthiophene) (P3HT) matrices to form nanocomposite films using the unidirectional floating film transfer method (UFTM). These aligned hybrid films showed dramatically improved charge transport properties compared to pristine P3HT. For instance, adding 3% (v/v) MXene increased the charge carrier mobility from 0.05 cm2V<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>s<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula> (pristine P3HT) to 0.57 cm2V<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula>s<inline-formula> <tex-math>${}^{-{1}}$ </tex-math></inline-formula> with a high on/off current ratio of <inline-formula> <tex-math>$10^{{5}}$ </tex-math></inline-formula>. We attribute this improvement to the template effect of the MXene nanobelts, which promotes the orientational alignment of P3HT chains, thus facilitating efficient charge transport pathways.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4963-4968"},"PeriodicalIF":3.2,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Analytical Model of RRAM Relaxation Effect and Its Application for Neural Network Weight Refresh Strategy in Large-Scale RRAM Array RRAM松弛效应分析模型及其在大规模RRAM阵列神经网络权值刷新策略中的应用

IF 3.2 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-28 DOI: 10.1109/TED.2025.3591090

Xingyu Zhai;Yu Kang;Liang Tian;Ao Du;Chenyi Wang;Yi Wang;Yinshui Xia;Yuda Zhao;Wenchao Chen

{"title":"An Analytical Model of RRAM Relaxation Effect and Its Application for Neural Network Weight Refresh Strategy in Large-Scale RRAM Array","authors":"Xingyu Zhai;Yu Kang;Liang Tian;Ao Du;Chenyi Wang;Yi Wang;Yinshui Xia;Yuda Zhao;Wenchao Chen","doi":"10.1109/TED.2025.3591090","DOIUrl":"https://doi.org/10.1109/TED.2025.3591090","url":null,"abstract":"In this article, an analytical model for the retention behaviors of analog resistive random access memory (RRAM) is proposed. The model accounts for the diffusion of oxygen vacancies (<inline-formula> <tex-math>${V}_{O}$ </tex-math></inline-formula>), the recombination of <inline-formula> <tex-math>${V}_{O}$ </tex-math></inline-formula>, and the impact of programming pulsewidth on the number of metastable oxygen vacancies. It enables the analysis of the conductivity drift characteristics of RRAM under various resistance states, temperatures, and programming pulse widths. The model is in good agreement with our experimental results of analog RRAM arrays with high/low <inline-formula> <tex-math>${V}_{O}$ </tex-math></inline-formula> diffusion coefficients, confirming the accuracy and practicability of the model. Additionally, the model is integrated into a fully connected RRAM-based neural network to evaluate the reliability of the network. Furthermore, this article introduces a novel weight refresh strategy based on the accurate retention time (ART), defined as the period during which neural network accuracy degrades slowly, to balance the trade-off between neural network performance and power consumption. The prediction scheme of ART employs a two-stage machine learning framework. The predicted results on the neural network demonstrate that the strategy maintains high accuracy (<inline-formula> <tex-math>$le 2$ </tex-math></inline-formula>% degradation) while minimizing refresh frequency. This work bridges physical mechanisms with neural network optimization, offering a scalable, low-power consumption solution for computation-in-memory (CIM) systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4929-4935"},"PeriodicalIF":3.2,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Gain CMOS-Like Inverters Based on F-Plasma-Treated Ambipolar SnO Thin-Film Transistors 基于f等离子体处理的双极性SnO薄膜晶体管的高增益类cmos逆变器

IF 3.2 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-28 DOI: 10.1109/TED.2025.3590361

Zening Gao;Peng Dai;Ning Wang;Yiwen Yao;Jialong Song;Jinlong Xiang;Yiming Wang;Jiawei Zhang;Yuxiang Li;Qian Xin;Aimin Song

{"title":"High-Gain CMOS-Like Inverters Based on F-Plasma-Treated Ambipolar SnO Thin-Film Transistors","authors":"Zening Gao;Peng Dai;Ning Wang;Yiwen Yao;Jialong Song;Jinlong Xiang;Yiming Wang;Jiawei Zhang;Yuxiang Li;Qian Xin;Aimin Song","doi":"10.1109/TED.2025.3590361","DOIUrl":"https://doi.org/10.1109/TED.2025.3590361","url":null,"abstract":"Although CMOS-like inverters based on ambipolar thin-film transistors (TFTs) have garnered significant interest due to their simplified fabrication and high integration density, achieving high-performance ambipolar TFTs remains challenging. In this work, we systematically investigate the effects of different annealing and passivation schemes—including annealing without passivation (AWP), annealing before passivation (ABP), and annealing after passivation (AAP)—using SiO2, Al2O3, and HfO2 passivation layers (PVLs) on the performance of SnO TFTs. Among them, the AAP-Al2O3 device exhibits the most balanced p-type and n-type conduction and superior negative bias stress (NBS) stability. Furthermore, the ambipolar characteristics, including the <sc>on</small>/<sc>off</small> current ratio, subthreshold swing (SS), and bias stress stability, were significantly enhanced by fluorine (F) plasma treatment on the SnO channel. Finally, a CMOS-like inverter composed of two identical F-plasma-treated ambipolar SnO TFTs achieved an exceptionally high voltage gain of 289 at a low supply voltage of 8 V. This work offers a simple and effective strategy for developing thin-film CMOS-like circuits suitable for the next-generation cost-effective electronics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"4976-4982"},"PeriodicalIF":3.2,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Radio Frequency Amplification in a Linear Crossed-Field Amplifier Using Cold Cathodes 使用冷阴极的线性交叉场放大器中的射频放大

IF 3.2 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-28 DOI: 10.1109/TED.2025.3591758

Ranajoy Bhattacharya;Cesar Segura Del Rio;Winston Chern;Jake West;Isaac Wolstenholme;Mason Cannon;Gerardo Herrera;Marcus Pearlman;Akintunde Ibitayo Akinwande;Allen L. Garner;Jim Browning

{"title":"Radio Frequency Amplification in a Linear Crossed-Field Amplifier Using Cold Cathodes","authors":"Ranajoy Bhattacharya;Cesar Segura Del Rio;Winston Chern;Jake West;Isaac Wolstenholme;Mason Cannon;Gerardo Herrera;Marcus Pearlman;Akintunde Ibitayo Akinwande;Allen L. Garner;Jim Browning","doi":"10.1109/TED.2025.3591758","DOIUrl":"https://doi.org/10.1109/TED.2025.3591758","url":null,"abstract":"A low-frequency (561 MHz), injected beam, and linear format crossed-field amplifier (CFA) using gated field emission arrays (GFEAs) has been experimentally studied and compared with simulation. The CFA uses a copper wire on Teflon meander line circuit with retardation of ~21. Eight silicon tip GFEA dies were used as the injected electron source to provide up to 160 mA. A segmented end-collector system (nine electrodes) was used to measure the spatial variation of the beam current with and without gain. A gain of ~5.5 dB was measured for a sole-circuit voltage of −2.9 kV, an injected beam current of ~160 mA, an applied magnetic field of 0.0125 T, a radio frequency (RF) input power of 15 W, and a sole-circuit gap of 2 cm. A CST particle in-cell model shows a high gain (~1–2 dB) than the experiment, but the gain variation versus injected current, voltage, and magnetic field matches well. Variation with RF input power shows a significant decrease in gain above 15 W in the experiment with the decrease seen in simulation observed after 25 W. Analysis of the end-collector current shows a rapid decrease after 12 W in the experiment and 25 W in the simulation. This result occurs because the highly cycloidal electrons are close to the CFA circuit and get collected on the circuit before providing amplification energy. This observation is confirmed in simulation, which shows that the current going to the circuit rapidly increases and the end-collector current rapidly decreases. This effect also accounts for the higher gain observed in simulation. These experiments provide a basis for using gated field emitters to study beam–wave interactions in microwave vacuum electron devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 9","pages":"5209-5215"},"PeriodicalIF":3.2,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144904843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 用于射频、功率和光电子应用的超宽带隙半导体器件

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-25 DOI: 10.1109/TED.2025.3585331

引用次数: 0

Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications 《汽车用宽带隙半导体电子器件》特刊征文

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-25 DOI: 10.1109/TED.2025.3585327

引用次数: 0

IEEE Transactions on Electron Devices Information for Authors IEEE电子器件信息汇刊

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-25 DOI: 10.1109/TED.2025.3585333

引用次数: 0

Impact of Channel Material, Interface Quality, and Polarization on Memory Window of Interfacial Layer-Free FeFET With Oxide Semiconductor 沟道材料、界面质量和极化对氧化物半导体无界面层ffet记忆窗的影响

IF 3.2 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-25 DOI: 10.1109/TED.2025.3589546

Zikang Yao;Danyang Chen;Tianning Cui;Yulong Dong;Zhiyu Lin;Jingquan Liu;Mengwei Si;Xiuyan Li

引用次数: 0

IEEE Transactions on Electron Devices Publication Information IEEE电子设备出版信息汇刊

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-25 DOI: 10.1109/TED.2025.3585325

引用次数: 0

Reliability of Advanced Nodes 高级节点可靠性

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-07-25 DOI: 10.1109/TED.2025.3585329

引用次数: 0