IEEE Transactions on Electron Devices最新文献_第6页

Impact of Anode Configuration on Performance of Field Emitter Arrays 阳极结构对场射极阵列性能的影响

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3558722

Youngjin Shin;Nedeljko Karaulac;Winston Chern;Akintunde I. Akinwande

{"title":"Impact of Anode Configuration on Performance of Field Emitter Arrays","authors":"Youngjin Shin;Nedeljko Karaulac;Winston Chern;Akintunde I. Akinwande","doi":"10.1109/TED.2025.3558722","DOIUrl":"https://doi.org/10.1109/TED.2025.3558722","url":null,"abstract":"We demonstrate the first steps in engineering the anode of field emitter arrays (FEAs) for optimal vacuum packaging by studying a parallel anode-cathode configuration. As part of our study, we report an unexpected gate-controlled negative differential resistance (NDR) region in the output characteristics of FEA-based triodes. The FEA triode consists of an FEA cathode and a silicon MEMS anode that are separated by insulated standoffs to form a vacuum channel. The FEA cathode is an array of high-aspect nanowires connected in series with gated emitter tips. Electrons extracted by the gate-emitter voltage undergo ballistic transport to the anode. It is generally assumed that a parallel anode-cathode triode structure would be ideal due to its geometrical compactness and symmetry. In this work, an on-chip integrated flat silicon anode was fabricated to characterize the parallel configuration for well-defined anode-to-emitter distances of <inline-formula> <tex-math>$leq 100~mu $ </tex-math></inline-formula>m. The observation of NDR in the “triode” operation regime, which is space-charge limited, suggests that the parallel anode-cathode structure will not be ideal for the integration of triodes for some circuit applications because of unfavorable electrostatics in the vacuum channel between the cathode and the anode. In addition, we demonstrated that the performance of the triodes could be engineered to reduce the <sc>on</small>-resistance (<inline-formula> <tex-math>${R}_{text {ON}}$ </tex-math></inline-formula>) and increase the output current by varying the geometry and position of the anode.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3161-3168"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144190608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Fast and Accurate Coarse Method for Multipactor Threshold Prediction of RF Filters Under Modulated Signal Excitation 调制信号激励下射频滤波器多因子阈值快速准确粗预测方法

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3559910

Carlos Alcaide Guillén;Miguel Rodríguez Jódar;Raúl Cervera Marín;Jose V. Morro;Pablo Soto;Òscar Monerris;Javier Ossorio;Rafael Mata;Davide Smacchia;Vicente E. Boria;César Miquel España

{"title":"A Fast and Accurate Coarse Method for Multipactor Threshold Prediction of RF Filters Under Modulated Signal Excitation","authors":"Carlos Alcaide Guillén;Miguel Rodríguez Jódar;Raúl Cervera Marín;Jose V. Morro;Pablo Soto;Òscar Monerris;Javier Ossorio;Rafael Mata;Davide Smacchia;Vicente E. Boria;César Miquel España","doi":"10.1109/TED.2025.3559910","DOIUrl":"https://doi.org/10.1109/TED.2025.3559910","url":null,"abstract":"Multipactor is a key high-power effect limiting the system performance for onboard satellite hardware. Although modern particle simulators admit arbitrary geometries and signals as inputs, their practical use is often limited to continuous-wave (CW) excitations. Unfortunately, the multipactor analysis for input-modulated signals normally leads to prohibitively large CPU times, as signal lengths are very large compared to the electron population’s evolution time. The Coarse Method is an elegant way of overcoming this limitation, providing a good estimate of the multipactor threshold in reduced CPU times. However, if the input signal is not preprocessed before being analyzed, the method is unable to account for the frequency dependence as it operates with electron dynamics information extracted at a single frequency, leading to biased predictions for narrowband samples as filters. This article proposes an extension to the original Coarse Method implementation by considering the sample response and the modulated signal spectral distribution to account for the frequency dependence. The resulting method is suitable for estimating the multipactor threshold of narrowband samples excited by modulated signals, while keeping the benefits in terms of simplicity, efficiency, and generality of the Coarse Method. The proposed approach is benchmarked against laboratory measurement results, as well as particle simulators and legacy Coarse Method predictions, revealing the advantages of the novel technique and its range of applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3177-3184"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10972331","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144190542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigations Into Failure Mechanism of Cascode GaN HEMTs Under Single Pulse Surge Current Stress 级联GaN hemt在单脉冲浪涌电流应力下失效机理的研究

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3560275

Weihao Lu;Sheng Li;Weixiong Mao;Yanfeng Ma;Mingfei Li;Jie Ma;Ran Ye;Jiaxing Wei;Long Zhang;Chi Zhang;Siyang Liu;Weifeng Sun

引用次数: 0

Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether 基于机器学习的一维声子晶体系链MEMS谐振器锚损降低研究

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3559898

Wen Chen;Yuhao Xiao;Kewen Zhu;Longlong Li;Guoqiang Wu

{"title":"Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether","authors":"Wen Chen;Yuhao Xiao;Kewen Zhu;Longlong Li;Guoqiang Wu","doi":"10.1109/TED.2025.3559898","DOIUrl":"https://doi.org/10.1109/TED.2025.3559898","url":null,"abstract":"In this article, a machine learning (ML)-based anchor loss reduction approach for microelectromechanical systems (MEMSs) resonators with 1-D gourd-shaped phononic crystal (PnC) tether is reported here. A forward artificial neural network (ANN) is used to accurately predict the dispersion characteristics of the PnC tether. Then, a tandem network comprising inverse ANN and forward ANN is used to predict the corresponding geometries of PnC tether according to the expected bandgap target. The final optimal geometries of PnC tether corresponding to the desired bandgap, for width-extensional (WE) mode piezoelectric MEMS resonators, are determined with the aid of the tandem network. To verify the reliability of the proposed tandem network, the dispersion characteristics of the predicted geometries obtained from ML are also simulated by finite element method (FEM) analysis. The forward ANN serves as a high-speed and high-accuracy tool for calculating the dispersion characteristics of the PnC, performing calculations <inline-formula> <tex-math>${3} times {10}^{{4}}$ </tex-math></inline-formula> times faster than FEM analysis, with an accuracy of 99.9%. ML provides an intelligible and effective approach to screen thousands of design candidates with the forward ANN, as well as optimizing the PnC design with the tandem network.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3127-3132"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144190539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inverse Design of Electron Gun With Transfer Learning Based on Neural Network 基于神经网络迁移学习的电子枪反设计

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3559877

Wei Hong;Hongli Gao;Changsheng Shen;Yongzhi Zhuang;Zhaofu Chen;Changqing Zhang;Pan Pan;Jinjun Feng;Ningfeng Bai

引用次数: 0

A Physics-Based Analytical Model for Single-Event Multiple Transients Considering Well Potential Fluctuation 考虑井势波动的单事件多瞬态物理分析模型

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3558490

Yutao Zhang;Hongliang Lyu;Yuming Zhang;Ruxue Yao

{"title":"A Physics-Based Analytical Model for Single-Event Multiple Transients Considering Well Potential Fluctuation","authors":"Yutao Zhang;Hongliang Lyu;Yuming Zhang;Ruxue Yao","doi":"10.1109/TED.2025.3558490","DOIUrl":"https://doi.org/10.1109/TED.2025.3558490","url":null,"abstract":"Due to factors such as the decreasing size of semiconductor processes and the threshold voltage of transistors, single-event transients (SETs) have the potential to develop into single-event multiple-transient (SEMT) effects. This study introduces an SEMT current model that accounts for the variability in the well potential to precisely characterize the multiple transient currents induced by a single particle. Through an examination of the alterations in physical parameters during SEMT occurrences, it is observed that fluctuations in the well potential can impact the collection of deposited charges and trigger the parasitic bipolar amplification effect. A physics-based SEMT current model is consequently formulated based on the underlying physical mechanisms. Verification of the proposed model is conducted through TCAD simulations, with 3-D simulation outcomes illustrating the efficacy of the analysis of physical mechanisms and model derivation under different linear energy transfers (LETs) and angles. Additionally, a 3-D three-stage inverter chain is assembled to confirm the model’s effectiveness in circuit-level simulation. The results indicate that the proposed model can accurately predict the critical LET. Notably, the simulation outcomes in SPICE, utilizing the proposed physical model, exhibit strong agreement with TCAD simulation results across various incident locations. And SPICE simulation could predict single-event double transients (SEDTs) under certain conditions, which is consistent with TCAD simulation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"2807-2813"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144196704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quasi-Periodic Sequences Generation of Ultrashort Pulses Based on the Superradiance of a Coaxial Cherenkov Generator Operating at Low Magnetic Field 基于低磁场工作的同轴切伦科夫发生器超辐射产生超短脉冲的准周期序列

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3559491

Renzhen Xiao;Renjie Cheng;Shaohui Han;Junqing Wang;Kaijuan Zhou;Dongyang Wang;Kun Chen

{"title":"Quasi-Periodic Sequences Generation of Ultrashort Pulses Based on the Superradiance of a Coaxial Cherenkov Generator Operating at Low Magnetic Field","authors":"Renzhen Xiao;Renjie Cheng;Shaohui Han;Junqing Wang;Kaijuan Zhou;Dongyang Wang;Kun Chen","doi":"10.1109/TED.2025.3559491","DOIUrl":"https://doi.org/10.1109/TED.2025.3559491","url":null,"abstract":"A coaxial Cherenkov generator operating at a low magnetic field is proposed to generate ultrashort-pulse quasi-periodic sequences based on the effect of superradiance (SR). The device employs an extended slow wave structure (SWS) with combined variations in corrugation depth and period, resulting in enhanced spectral continuity and higher SR power. Most of the microwave power is coupled into the hollow waveguide formed by the inner conductor of the coaxial SWS. A portion of the SR pulse generated in the coaxial SWS is reflected back into the SWS, where it is primarily absorbed by disturbed electrons rather than seeding the next SR pulse. Particle-in-cell (PIC) simulations demonstrate that under a diode voltage of 720 kV, beam current of 19.2 kA, and guiding magnetic field of 0.54 T, six short pulses with instantaneous peak power of 15.5–28.5 GW and full width half maximum (FWHM) durations of 0.7–1.4 ns are produced within a 50 ns window. The inter-pulse intervals range from 4.4 to 8.8 ns. The frequency is in the X-band with an 800 MHz bandwidth at the −10 dB level. The variations in peak power and timing are thoroughly analyzed, and the physical mechanisms underlying the quasi-periodic ultrashort-pulse formation are elucidated. A new insight is provided that the critical factor for the sequence formation based on the SR effect lies in the recovery of the electron beam to an undisturbed state after each pulse.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3169-3176"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144190605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

3.0 kV β-Ga2O3-Based Vertical p-n Heterojunction Diodes With Helium- Implanted Edge Termination 3.0 kV氦注入边缘终端β- ga2o3基垂直p-n异质结二极管

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-22 DOI: 10.1109/TED.2025.3560277

Jiajun Han;Na Sun;Xinyi Pei;Rui Wang;Kangkai Fan;Renqiang Zhu;Min Wang;Xi Zhu;Xiaohua Li;Jingbo Li;Nengjie Huo;Jiandong Ye;Xinke Liu

{"title":"3.0 kV β-Ga2O3-Based Vertical p-n Heterojunction Diodes With Helium- Implanted Edge Termination","authors":"Jiajun Han;Na Sun;Xinyi Pei;Rui Wang;Kangkai Fan;Renqiang Zhu;Min Wang;Xi Zhu;Xiaohua Li;Jingbo Li;Nengjie Huo;Jiandong Ye;Xinke Liu","doi":"10.1109/TED.2025.3560277","DOIUrl":"https://doi.org/10.1109/TED.2025.3560277","url":null,"abstract":"We demonstrated the vertical NiO/<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 p-n heterojunction diodes (HJDs) with a high breakdown voltage (<inline-formula> <tex-math>${V}_{text {BR}}text {)}$ </tex-math></inline-formula> of 3000 V and a low <sc>on</small>-resistance (<inline-formula> <tex-math>${R}_{text {on, {sp}}}text {)}$ </tex-math></inline-formula> of 3.12 m<inline-formula> <tex-math>$Omega cdot $ </tex-math></inline-formula>cm2, resulting in a Baliga’s figure of merit (FOM) of 2.88 GW/cm2. Specifically, an efficient and low-damage edge termination (ET) formed by the implantation of lightweight Helium atoms was introduced to inhibit the high electric field at the p-n junction of HJDs, thereby increasing <inline-formula> <tex-math>${V}_{text {BR}}$ </tex-math></inline-formula> of devices from 1330 to 3000 V. The reverse leakage mechanisms were fit and analyzed, revealing distinct breakdown mechanisms in He-implanted devices. The simulation results confirmed the peak electric field at the p-n junction of devices can be effectively suppressed by He-implanted ET. Meanwhile, a narrow change of devices’ <inline-formula> <tex-math>${R}_{text {on, {sp}}}$ </tex-math></inline-formula> occurred after He implantation and the low-<inline-formula> <tex-math>${R}_{text {on, {sp}}}$ </tex-math></inline-formula> forward conduction of devices was confirmed by efficient charge transfer of heterojunction with density functional theory (DFT) calculation. This work may provide a new insight into the design and fabrication of high-power, low-loss <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 bipolar power devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"2879-2883"},"PeriodicalIF":2.9,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144196941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Trajectory Prediction System Utilizing the Intrinsic Long-Term and Short-Term Plasticity in CT-FeFET 利用ct - ffet内禀长短期塑性的轨迹预测系统

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-21 DOI: 10.1109/TED.2025.3559520

Chao Li;Xumeng Zhang;Zhaohao Zhang;Fangduo Zhu;Gaobo Xu;Jie Yu;Qingzhu Zhang;Qi Liu;Ming Liu

{"title":"Trajectory Prediction System Utilizing the Intrinsic Long-Term and Short-Term Plasticity in CT-FeFET","authors":"Chao Li;Xumeng Zhang;Zhaohao Zhang;Fangduo Zhu;Gaobo Xu;Jie Yu;Qingzhu Zhang;Qi Liu;Ming Liu","doi":"10.1109/TED.2025.3559520","DOIUrl":"https://doi.org/10.1109/TED.2025.3559520","url":null,"abstract":"Trajectory prediction is a vital function in the auto-driving field which relies on both historical information and current inputs to make forecasts. Continuous attractor neural network (CANN) with dynamic synapses is one of the typical algorithms for conducting prediction tasks. However, current devices are limited to separately handling static weight storage and dynamic modulation, leading to considerable resource consumption in the hardware implementation of CANN. Here, we integrate long-term and short-term plasticity using charge-trapping ferroelectric FETs (CT-FeFETs) to realize dynamic synaptic units. The long-term weights are stored in the ferroelectric domain, while the short-term weights are dynamically operated in a CT domain, eliminating the external caching process. Based on the intrinsic long-term and short-term plasticity of CT-FeFETs, historical information interacts with the inputs in situ, facilitating a dynamic in-memory computing (IMC) that enables real-time prediction. Moreover, we introduced CT-FeFET into both feedforward networks and CANN to validate prediction performance, and confirmed that a larger dynamic range and smaller time constant in the short-term dynamics enable the system to match a broader speed range for predictive tracking. This work provides a novel way of performing interacting tasks with dynamic IMC technology.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3280-3286"},"PeriodicalIF":2.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bias-Selectable Dual-Mode SOI/PbSe Heterojunction for Visible-to-Shortwave Infrared Photodetector 可见光-短波红外探测器用偏置可选双模SOI/PbSe异质结

IF 2.9 2区工程技术

IEEE Transactions on Electron Devices Pub Date : 2025-04-21 DOI: 10.1109/TED.2025.3559880

Shuren Zhou;Haodong Fan;Yunchen Zhang;Lingkang Kong;Yi Yin;Changyong Lan;Chun Li;Yong Liu

{"title":"Bias-Selectable Dual-Mode SOI/PbSe Heterojunction for Visible-to-Shortwave Infrared Photodetector","authors":"Shuren Zhou;Haodong Fan;Yunchen Zhang;Lingkang Kong;Yi Yin;Changyong Lan;Chun Li;Yong Liu","doi":"10.1109/TED.2025.3559880","DOIUrl":"https://doi.org/10.1109/TED.2025.3559880","url":null,"abstract":"Silicon-integrated broadband photodetectors covering a wide spectral range are important for next-generation optoelectronic systems. Directly building heterojunctions based on the stacking of bulk silicon and narrow-bandgap semiconductor thin films has emerged as an interesting research focus, considering their simple and effective fabrication methods. However, the long diffusion length of the charge carriers limits the response time, and the intrinsic lack of gain of the photodiode results in low infrared response in devices. In this work, we report a bias-selectable broadband and high photography-responsive Si/PbSe heterojunction photodetector fabricated on silicon-on-insulator (SOI) substrate. Specifically, the device operates in photodiode mode under reverse bias with responsivities of 4 mA/W and <inline-formula> <tex-math>$3~mu $ </tex-math></inline-formula>A/W at 520 and 1550 nm, respectively. Under forward bias, the device is in photoconductor mode with responsivities of 6 A/W and 250 mA/W at 520 and 1550 nm, respectively. Additionally, the response times of the device are 450/390 ns and 7/<inline-formula> <tex-math>$8~mu $ </tex-math></inline-formula>s under reverse and forward bias, respectively. Our results may provide solutions for the future development of miniaturized and multifunctional Si-integrated infrared detectors for broadband imaging and miniaturized spectrometers.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3343-3346"},"PeriodicalIF":2.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0