{"title":"基于机器学习的一维声子晶体系链MEMS谐振器锚损降低研究","authors":"Wen Chen;Yuhao Xiao;Kewen Zhu;Longlong Li;Guoqiang Wu","doi":"10.1109/TED.2025.3559898","DOIUrl":null,"url":null,"abstract":"In this article, a machine learning (ML)-based anchor loss reduction approach for microelectromechanical systems (MEMSs) resonators with 1-D gourd-shaped phononic crystal (PnC) tether is reported here. A forward artificial neural network (ANN) is used to accurately predict the dispersion characteristics of the PnC tether. Then, a tandem network comprising inverse ANN and forward ANN is used to predict the corresponding geometries of PnC tether according to the expected bandgap target. The final optimal geometries of PnC tether corresponding to the desired bandgap, for width-extensional (WE) mode piezoelectric MEMS resonators, are determined with the aid of the tandem network. To verify the reliability of the proposed tandem network, the dispersion characteristics of the predicted geometries obtained from ML are also simulated by finite element method (FEM) analysis. The forward ANN serves as a high-speed and high-accuracy tool for calculating the dispersion characteristics of the PnC, performing calculations <inline-formula> <tex-math>${3} \\times {10}^{{4}}$ </tex-math></inline-formula> times faster than FEM analysis, with an accuracy of 99.9%. ML provides an intelligible and effective approach to screen thousands of design candidates with the forward ANN, as well as optimizing the PnC design with the tandem network.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3127-3132"},"PeriodicalIF":2.9000,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether\",\"authors\":\"Wen Chen;Yuhao Xiao;Kewen Zhu;Longlong Li;Guoqiang Wu\",\"doi\":\"10.1109/TED.2025.3559898\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, a machine learning (ML)-based anchor loss reduction approach for microelectromechanical systems (MEMSs) resonators with 1-D gourd-shaped phononic crystal (PnC) tether is reported here. A forward artificial neural network (ANN) is used to accurately predict the dispersion characteristics of the PnC tether. Then, a tandem network comprising inverse ANN and forward ANN is used to predict the corresponding geometries of PnC tether according to the expected bandgap target. The final optimal geometries of PnC tether corresponding to the desired bandgap, for width-extensional (WE) mode piezoelectric MEMS resonators, are determined with the aid of the tandem network. To verify the reliability of the proposed tandem network, the dispersion characteristics of the predicted geometries obtained from ML are also simulated by finite element method (FEM) analysis. The forward ANN serves as a high-speed and high-accuracy tool for calculating the dispersion characteristics of the PnC, performing calculations <inline-formula> <tex-math>${3} \\\\times {10}^{{4}}$ </tex-math></inline-formula> times faster than FEM analysis, with an accuracy of 99.9%. ML provides an intelligible and effective approach to screen thousands of design candidates with the forward ANN, as well as optimizing the PnC design with the tandem network.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"72 6\",\"pages\":\"3127-3132\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2025-04-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10972319/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10972319/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether
In this article, a machine learning (ML)-based anchor loss reduction approach for microelectromechanical systems (MEMSs) resonators with 1-D gourd-shaped phononic crystal (PnC) tether is reported here. A forward artificial neural network (ANN) is used to accurately predict the dispersion characteristics of the PnC tether. Then, a tandem network comprising inverse ANN and forward ANN is used to predict the corresponding geometries of PnC tether according to the expected bandgap target. The final optimal geometries of PnC tether corresponding to the desired bandgap, for width-extensional (WE) mode piezoelectric MEMS resonators, are determined with the aid of the tandem network. To verify the reliability of the proposed tandem network, the dispersion characteristics of the predicted geometries obtained from ML are also simulated by finite element method (FEM) analysis. The forward ANN serves as a high-speed and high-accuracy tool for calculating the dispersion characteristics of the PnC, performing calculations ${3} \times {10}^{{4}}$ times faster than FEM analysis, with an accuracy of 99.9%. ML provides an intelligible and effective approach to screen thousands of design candidates with the forward ANN, as well as optimizing the PnC design with the tandem network.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.