A Physics-Based Analytical Model for Single-Event Multiple Transients Considering Well Potential Fluctuation

Abstract

Due to factors such as the decreasing size of semiconductor processes and the threshold voltage of transistors, single-event transients (SETs) have the potential to develop into single-event multiple-transient (SEMT) effects. This study introduces an SEMT current model that accounts for the variability in the well potential to precisely characterize the multiple transient currents induced by a single particle. Through an examination of the alterations in physical parameters during SEMT occurrences, it is observed that fluctuations in the well potential can impact the collection of deposited charges and trigger the parasitic bipolar amplification effect. A physics-based SEMT current model is consequently formulated based on the underlying physical mechanisms. Verification of the proposed model is conducted through TCAD simulations, with 3-D simulation outcomes illustrating the efficacy of the analysis of physical mechanisms and model derivation under different linear energy transfers (LETs) and angles. Additionally, a 3-D three-stage inverter chain is assembled to confirm the model’s effectiveness in circuit-level simulation. The results indicate that the proposed model can accurately predict the critical LET. Notably, the simulation outcomes in SPICE, utilizing the proposed physical model, exhibit strong agreement with TCAD simulation results across various incident locations. And SPICE simulation could predict single-event double transients (SEDTs) under certain conditions, which is consistent with TCAD simulation.