基于神经网络迁移学习的电子枪反设计

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Wei Hong;Hongli Gao;Changsheng Shen;Yongzhi Zhuang;Zhaofu Chen;Changqing Zhang;Pan Pan;Jinjun Feng;Ningfeng Bai
{"title":"基于神经网络迁移学习的电子枪反设计","authors":"Wei Hong;Hongli Gao;Changsheng Shen;Yongzhi Zhuang;Zhaofu Chen;Changqing Zhang;Pan Pan;Jinjun Feng;Ningfeng Bai","doi":"10.1109/TED.2025.3559877","DOIUrl":null,"url":null,"abstract":"This article presents an inverse design with transfer learning based on neural network (ID-TL-NN) for the rapid design of electron guns, which expands the range of the structural parameter designs through TL. This ID-TL-NN method can quickly predict electron beam trajectory envelopes and beam waist radius based on given structural parameters. Moreover, it has inverse design function, which can rapidly design corresponding electron gun structures based on given target electron beam envelopes and beam waist radius. The simulation results show that the beam waist radius error is less than 5% compared with the value of the target radius. Furthermore, through TL, the proposed model can extend the range of the structural parameters of the electron gun, achieving high-precision design with only a small number of samples. The model trained with a limited sample set predicts a beam waist radius error of 5%. Compared with traditional methods, this approach significantly increases the efficiency and accuracy of the electron gun design.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3185-3191"},"PeriodicalIF":2.9000,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Inverse Design of Electron Gun With Transfer Learning Based on Neural Network\",\"authors\":\"Wei Hong;Hongli Gao;Changsheng Shen;Yongzhi Zhuang;Zhaofu Chen;Changqing Zhang;Pan Pan;Jinjun Feng;Ningfeng Bai\",\"doi\":\"10.1109/TED.2025.3559877\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents an inverse design with transfer learning based on neural network (ID-TL-NN) for the rapid design of electron guns, which expands the range of the structural parameter designs through TL. This ID-TL-NN method can quickly predict electron beam trajectory envelopes and beam waist radius based on given structural parameters. Moreover, it has inverse design function, which can rapidly design corresponding electron gun structures based on given target electron beam envelopes and beam waist radius. The simulation results show that the beam waist radius error is less than 5% compared with the value of the target radius. Furthermore, through TL, the proposed model can extend the range of the structural parameters of the electron gun, achieving high-precision design with only a small number of samples. The model trained with a limited sample set predicts a beam waist radius error of 5%. Compared with traditional methods, this approach significantly increases the efficiency and accuracy of the electron gun design.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"72 6\",\"pages\":\"3185-3191\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2025-04-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10972333/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10972333/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种基于神经网络迁移学习的电子枪快速设计反设计方法(ID-TL-NN),通过迁移学习扩展了电子枪结构参数设计的范围,该方法可以根据给定的结构参数快速预测电子枪的电子束轨迹包络和束腰半径。此外,它还具有逆设计功能,可以根据给定的目标电子束包络和束腰半径,快速设计出相应的电子枪结构。仿真结果表明,与目标半径值相比,束腰半径误差小于5%。此外,该模型通过TL扩展了电子枪结构参数的范围,实现了少量样品的高精度设计。用有限样本集训练的模型预测束腰半径误差为5%。与传统方法相比,该方法显著提高了电子枪设计的效率和精度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Inverse Design of Electron Gun With Transfer Learning Based on Neural Network
This article presents an inverse design with transfer learning based on neural network (ID-TL-NN) for the rapid design of electron guns, which expands the range of the structural parameter designs through TL. This ID-TL-NN method can quickly predict electron beam trajectory envelopes and beam waist radius based on given structural parameters. Moreover, it has inverse design function, which can rapidly design corresponding electron gun structures based on given target electron beam envelopes and beam waist radius. The simulation results show that the beam waist radius error is less than 5% compared with the value of the target radius. Furthermore, through TL, the proposed model can extend the range of the structural parameters of the electron gun, achieving high-precision design with only a small number of samples. The model trained with a limited sample set predicts a beam waist radius error of 5%. Compared with traditional methods, this approach significantly increases the efficiency and accuracy of the electron gun design.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信