Wei Hong;Hongli Gao;Changsheng Shen;Yongzhi Zhuang;Zhaofu Chen;Changqing Zhang;Pan Pan;Jinjun Feng;Ningfeng Bai
{"title":"Inverse Design of Electron Gun With Transfer Learning Based on Neural Network","authors":"Wei Hong;Hongli Gao;Changsheng Shen;Yongzhi Zhuang;Zhaofu Chen;Changqing Zhang;Pan Pan;Jinjun Feng;Ningfeng Bai","doi":"10.1109/TED.2025.3559877","DOIUrl":null,"url":null,"abstract":"This article presents an inverse design with transfer learning based on neural network (ID-TL-NN) for the rapid design of electron guns, which expands the range of the structural parameter designs through TL. This ID-TL-NN method can quickly predict electron beam trajectory envelopes and beam waist radius based on given structural parameters. Moreover, it has inverse design function, which can rapidly design corresponding electron gun structures based on given target electron beam envelopes and beam waist radius. The simulation results show that the beam waist radius error is less than 5% compared with the value of the target radius. Furthermore, through TL, the proposed model can extend the range of the structural parameters of the electron gun, achieving high-precision design with only a small number of samples. The model trained with a limited sample set predicts a beam waist radius error of 5%. Compared with traditional methods, this approach significantly increases the efficiency and accuracy of the electron gun design.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 6","pages":"3185-3191"},"PeriodicalIF":2.9000,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10972333/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This article presents an inverse design with transfer learning based on neural network (ID-TL-NN) for the rapid design of electron guns, which expands the range of the structural parameter designs through TL. This ID-TL-NN method can quickly predict electron beam trajectory envelopes and beam waist radius based on given structural parameters. Moreover, it has inverse design function, which can rapidly design corresponding electron gun structures based on given target electron beam envelopes and beam waist radius. The simulation results show that the beam waist radius error is less than 5% compared with the value of the target radius. Furthermore, through TL, the proposed model can extend the range of the structural parameters of the electron gun, achieving high-precision design with only a small number of samples. The model trained with a limited sample set predicts a beam waist radius error of 5%. Compared with traditional methods, this approach significantly increases the efficiency and accuracy of the electron gun design.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.