VₜTuning of Split-Gate GeSi Nanosheet CFETs With Dual Work Function Metals

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-08-05 DOI:10.1109/TED.2025.3592634

Ying-Qi Liu;Bo-Wei Huang;Chun-Yi Cheng;Wei-Jen Chen;Min-Kuan Lin;Yi Huang;Ding-Wei Lin;C. W. Liu

引用次数: 0

Abstract

A novel device integration scheme for dual-work-function-metal split-gate complementary FETs (CFETs) is demonstrated. Multiple p/n junctions are used to electrically isolate the vertically stacked transistors. The effective work function (EWF) of WNxCy is modulated by the N2/H2 flow ratio during the plasma-enhanced atomic layer deposition (PEALD) process. A ~10-nm-thick WNxCy layer enables

${V}_{\text {TP}}$

(threshold voltage of pFETs) tunability up to 500 mV, while TiN is used as work function metal (WFM) for nFETs. The dual-WFM split-gate architecture achieves well-balanced threshold voltages, with a

$\vert {V}_{\text {TP}}\vert $

$\vert {V}_{\text {TN}}\vert $

ratio of 0.93. Furthermore, the CFET inverter with dual WFMs and split gate reaches a record-high voltage gain of 61 V/V among reported monolithic nanosheet CFETs.

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具有双功功能金属的分栅GeSi纳米片cfet的调谐

提出了一种新的双工作功能金属分栅互补场效应管（cfet）器件集成方案。多个p/n结用于电隔离垂直堆叠的晶体管。等离子体增强原子层沉积（PEALD）过程中N2/H2流量比可调节WNxCy的有效功函数（EWF）。一个~ 10nm厚的WNxCy层使${V}_{\text {TP}}$ （pfet的阈值电压）可调到500 mV，而TiN用作nfet的功功能金属（WFM）。双wfm分闸结构实现了良好平衡的阈值电压，$\vert {V}_{\text {TP}}\vert $ / $\vert {V}_{\text {TN}}\vert $比值为0.93。此外，具有双WFMs和分栅的CFET逆变器在已有的单片纳米片CFET中达到了创纪录的61 V/V的高电压增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.