基于BTO/AlXGa1-XN异质结构的成像与光通信太阳盲UV PD

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-08-04 DOI:10.1109/TED.2025.3591742

Xu Qi;Leyang Qian;Xuekun Hong;Bingjie Ye;Huazhan Sun;Anqi Qiang;Yushen Liu;Irina Nikolaevna Parkhomenko;Fadei Fadeevich Komarov;Jun-Ge Liang;Xinyi Shan;Guofeng Yang

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引用次数: 0

摘要

本工作展示了一种基于铁电极化工程BTO/AlXGa1-XN异质结构的太阳盲紫外光电探测器（PD）。关键的创新在于利用BTO的可切换自发极化来主动调制界面静电，创造了一个极化耦合的载流子传输通道，从根本上克服了AlGaN材料固有的载流子传输限制。该机制协同增强了内置电场和优化的能带对准，促进了光生载流子的输运。该装置在保持固有的太阳盲选择性的同时实现了高响应性和探测性，显著优于传统的algan探测器。此外，我们通过紫外成像和精确的光通信信号解码验证了它的实用性，为先进的光电系统建立了新的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Solar-Blind UV PD Based on the BTO/AlXGa1-XN Heterostructure for Imaging and Optical Communication

This work demonstrated a solar-blind ultraviolet (UV) photodetector (PD) based on a ferroelectric polarization-engineered BTO/AlXGa1-XN heterostructure. The key innovation lied in exploiting BTO’s switchable spontaneous polarization to actively modulate interfacial electrostatics, creating a polarization-coupled carrier transport channel that fundamentally overcame the inherent carrier transport limitations of AlGaN materials. This mechanism synergistically enhanced the built-in electric field and optimized band alignment, which facilitated photogenerated carrier transport. The resultant device achieved high responsivity and detectivity while maintaining intrinsic solar-blind selectivity, significantly surpassing conventional AlGaN-based detectors. Furthermore, we validate its practical utility through UV imaging and accurate optical communication signal decoding, establishing new possibilities for advanced optoelectronic systems.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.