Investigation of Time-Dependent Dielectric Breakdown on Commercial SiC MOSFETs Using Constant-Voltage and Pulse-Voltage

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-08-08 DOI:10.1109/TED.2025.3594603

Michael Jin;Hengyu Yu;Monikuntala Bhattacharya;Jiashu Qian;Shiva Houshmand;Atsushi Shimbori;Marvin H. White;Anant K. Agarwal

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引用次数: 0

Abstract

This study estimates the intrinsic gate oxide lifetime of two generations of commercial planar SiC MOSFETs using pulse-voltage time-dependent dielectric breakdown (PV-TDDB) and constant-voltage (CV) time-dependent dielectric breakdown (TDDB) at

$150~^{\circ }$

C. Compared to the conventional CV time-dependent-dielectric-breakdown (CV-TDDB) method, the proposed PV-TDDB method yields significantly higher predicted lifetimes at the same oxide electric field, with estimated lifetimes closer to actual operational lifetimes. Furthermore, the gate leakage current behaviors under both conditions are analyzed. The effects of charge trapping in the gate oxide on the gate leakage current and the lifetime are examined, along with the effects of the high-frequency gate voltage pulses on the gate oxide and trapped charges. Finally, the gate oxide lifetime of the two generations of devices is compared. The proposed PV-TDDB method enhances conventional CV-TDDB testing by incorporating pulsed gate oxide voltages, thereby providing a more representative assessment of oxide lifetime under real operating conditions.

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恒压和脉冲电压下商用SiC mosfet介电击穿的研究

本研究利用脉冲电压时变介电击穿（PV-TDDB）和恒压时变介电击穿（TDDB）估算了两代商用平面SiC mosfet在150~^{\circ}$ c下的固有栅氧化寿命。与传统的CV时变介电击穿（CV-TDDB）方法相比，所提出的PV-TDDB方法在相同的氧化电场下产生了更高的预测寿命。估计寿命更接近实际运行寿命。进一步分析了两种条件下栅漏电流的特性。研究了栅极氧化物中电荷捕获对栅极泄漏电流和寿命的影响，以及高频栅极电压脉冲对栅极氧化物和捕获电荷的影响。最后，对两代器件的栅氧化寿命进行了比较。提出的PV-TDDB方法通过结合脉冲栅极氧化物电压来改进传统的CV-TDDB测试，从而在实际工作条件下提供更具代表性的氧化物寿命评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.