Toward Generation of Megawatt Subnanosecond Microwave Pulses With High Repetition Rate

IF 3.2 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhiyuan Zhang;Weijie Wang;Ruoyang Pan;Yelei Yao;Wei Jiang;Zewei Wu;Youlei Pu;Jianxun Wang;Yong Luo;Guo Liu
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引用次数: 0

Abstract

This article presents a study on the generation of megawatt-level subnanosecond microwave pulses with high repetition rates using frequency-modulated (FM) pulse compression, including the simulation and cold test of the compressor. In the simulation, a 150 kW continuously repeated chirp signal, ranging from 27.5 to 31.5 GHz, is generated by a wideband gyrotron traveling-wave tube (gyro-TWT) and injected into the compressor. The compressed subnanosecond pulse exhibits a peak power of 7.72 MW, a duration of 221 ps, and a repetition rate of up to 40 MHz. The simulation also shows that the designed circular waveguide compressor can handle strong electric fields and high power. The cold test results demonstrate excellent agreement with the simulations, which indicate the capability of this compressor for generating megawatt-level subnanosecond microwave pulses with high repetition rates.
高重复频率的兆瓦亚纳秒微波脉冲的产生
本文介绍了利用调频脉冲压缩技术产生高重复频率的兆瓦级亚纳秒微波脉冲的研究,包括压缩机的仿真和冷试验。仿真中,利用宽带回旋管行波管(gyrotron行波管)产生27.5 ~ 31.5 GHz范围内的150 kW连续重复啁啾信号注入压缩机。压缩后的亚纳秒脉冲峰值功率为7.72 MW,持续时间为221 ps,重复频率高达40 MHz。仿真结果表明,所设计的圆波导压缩器能够处理强电场和高功率。冷态试验结果与仿真结果吻合良好,表明该压缩机具有产生高重复频率的兆瓦级亚纳秒微波脉冲的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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