Ultralow Contact Resistivity of <0.13 Ω · mm for Normal Ti/Al/Ni/Au Ohmic Contact on Non-Recessed i-AlGaN/GaN

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-10 DOI:10.1109/TED.2025.3555265

Xiao Wang;Zhiyu Lin;Yumin Zhang;Jianfeng Wang;Ke Xu

引用次数: 0

Abstract

By utilizing a traditional Ti/Al/Ni/Au metal stack on i-AlGaN/GaN, we achieved an ultralow contact resistivity of

$\lt 0.13~\Omega ~\cdot $

mm through a combined annealing process, which includes holding at

$550~^{\circ }$

C for 20 s, followed by a 60-s annealing at

$840~^{\circ }$

C with an optimized ramp-up rate of

$10~^{\circ }$

C/s. The formation of TixAlyAuz alloy spikes directly contacting the 2DEG is identified as the primary mechanism for the ultralow contact resistance, which we attribute to the severity of Al transitioning into a molten state during the process.

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非凹槽i-AlGaN/GaN上正常Ti/Al/Ni/Au欧姆接触的超低接触电阻率<0.13 Ω·mm

通过在i-AlGaN/GaN上使用传统的Ti/Al/Ni/Au金属堆叠，我们通过组合退火工艺实现了$\lt 0.13~\Omega ~\cdot $ mm的超低接触电阻率，其中包括在$550~^{\circ}$ C下保持20秒，然后在$840~^{\circ}$ C下退火60秒，优化的升温速率为$10~^{\circ}$ C/s。直接接触2DEG的TixAlyAuz合金尖刺的形成被认为是超低接触电阻的主要机制，我们将其归因于Al在此过程中转变为熔融状态的严重程度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.