A Novel SCR Topology of Embedded Bipolar Transistor With High-Holding Voltage and High-Temperature Tolerance for ESD Protection

Abstract

Automotive electronics typically operate in high-temperature environments with significant electrostatic interference, which increases the reliability requirements for on-chip electrostatic discharge (ESD) protection. To better address these challenging conditions, this article presents a novel silicon-controlled rectifier topology of embedded bipolar transistor (SCRTEBT) for ESD protection. The ESD performance of the SCRTEBT device is significantly enhanced by combining bipolar-transistor current paths and modulating the current gain of parasitic n-p-n transistors. Test results indicate that the SCRTEBT has a high-holding voltage of 10.83 V, while also providing a narrow ESD window (~2.37 V), and excellent high-temperature tolerance. The device concept can have applications for implementing systems subject to electrical overstress conditions and required to operate in harsh environments such as automotive.