IEEE Transactions on Components, Packaging and Manufacturing Technology最新文献_第8页

Printed Circuit Board (PCB)-Integrated Millimeter Module Composed of a Horn Antenna Fed Through a Grounded Coplanar Waveguide 印刷电路板(PCB)-集成毫米模块，由喇叭天线组成，通过接地共面波导馈电

IF 2.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-04-03 DOI: 10.1109/TCPMT.2025.3557708

Hassan Bouazzaoui;Benjamin Potelon;Cedric Quendo;Rozenn Allanic;Lucien Traon

{"title":"Printed Circuit Board (PCB)-Integrated Millimeter Module Composed of a Horn Antenna Fed Through a Grounded Coplanar Waveguide","authors":"Hassan Bouazzaoui;Benjamin Potelon;Cedric Quendo;Rozenn Allanic;Lucien Traon","doi":"10.1109/TCPMT.2025.3557708","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3557708","url":null,"abstract":"This article details the design and manufacturing process of a compact module fed through a transition between a grounded coplanar waveguide (GCPW) input line and an air-filled (AF) waveguide integrated into the substrate. This waveguide feeds a micromachined horn antenna. The developed technology is based on the micromachining of an AF waveguide on a first substrate and a horn antenna on a second one. These two substrates are then assembled by a thermal diffusion process, which allows for creating an electrically conductive bonding interface. The novelty of this work relies in the use of this innovative technological process for the realization of millimeter-wave (mm-wave) subsystems. Furthermore, the developed technology enables the creation of high-performance components utilizing AF substrate integrated waveguides (AF-SIWs). This approach effectively addresses the challenges associated with transferring, integrating, and reducing costs often encountered in high-frequency systems development. The resulting device forms a highly integrated, low-cost, yet electrically performant mm-wave module entirely manufactured with a printed circuit board (PCB) process. The manufactured prototype operates at V-band, exhibiting a bandwidth of 3.1% and a maximum gain of 6.4 dBi.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 7","pages":"1494-1501"},"PeriodicalIF":2.3,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Double-Sided Copper Filling of Small Diameter, High-Aspect Ratio Through-Glass Vias in High-Density Glass Interposers 高密度玻璃中间体中小直径、高纵横比玻璃通孔的双面铜填充

IF 2.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-04-02 DOI: 10.1109/TCPMT.2025.3557232

Ye Yang;Kelly E. Lahaie;Tiwei Wei

{"title":"Double-Sided Copper Filling of Small Diameter, High-Aspect Ratio Through-Glass Vias in High-Density Glass Interposers","authors":"Ye Yang;Kelly E. Lahaie;Tiwei Wei","doi":"10.1109/TCPMT.2025.3557232","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3557232","url":null,"abstract":"Glass substrates offer significant advantages over current organic substrate, particularly in high-density, high-performance chip packaging for data-intensive applications such as artificial intelligence (AI). Glass with ultralow flatness enhances the depth of focus in lithography, which helps pattern precisely at advanced metal interconnects. In addition, their superior thermal stability minimizes pattern distortion, and their outstanding mechanical stability supports ultralarge package sizes. These exceptional dimensional stability properties facilitate precise layer-to-layer interconnect alignment, ultimately enabling glass substrates to achieve ten times higher interconnect density compared to organic substrates. However, fabricating high-density, small-diameter, high-aspect ratio (AR) through-glass vias (TGVs) remains a significant challenge. The current state-of-the-art technology for vertical TGVs achieves an AR of 12, with a via diameter of <inline-formula> <tex-math>$30~mu $ </tex-math></inline-formula>m. In this work, we present the first demonstration of straight TGVs with 20-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m diameters on 300-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m thick borosilicate glass, achieving a record-high AR of 15. Thanks to the low large-area packaging cost, low thermal expansion coefficient, excellent thermal stability, and low electrical dissipation in high-frequency operation, borosilicate is chosen as the glass substrate in our research. For straight, high AR TGVs, this study explores a double-sided seed layer enhancement (SLE) approach using electroless deposition to reinforce the seed layer, combined with an electroplating strategy to produce void-free, fully filled straight TGVs metal interconnects. The parameter study of the SLE process provides valuable insights and guidelines for fabricating high AR TGVs for future high interconnect density 3-D integration systems.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 7","pages":"1529-1537"},"PeriodicalIF":2.3,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical Setup for Laser-Assisted Bonding With Through-Silicon Microscopy Capabilities 光学设置激光辅助键与通过硅显微镜的能力

IF 2.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-04-02 DOI: 10.1109/TCPMT.2025.3557118

Aleksandr A. Vlasov;Topi Uusitalo;Evgenii Lepukhov;Jukka Viheriälä;Mircea Guina

引用次数: 0

Unified Microwave Terahertz Waveguide Coupler for Multiband Wireless Applications 用于多波段无线应用的统一微波太赫兹波导耦合器

IF 2.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-03-31 DOI: 10.1109/TCPMT.2025.3556594

Jie Deng;Pascal Burasa;Ke Wu

引用次数: 0

Three-Dimensional Low-Loss Power-Dividing Networks Based on Metal Integrated Suspended Line (MISL) for High Power Applications 基于金属集成悬吊线（MISL）的高功率三维低损耗分网

IF 2.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-03-31 DOI: 10.1109/TCPMT.2025.3556254

Hanyong Wang;Yongqiang Wang;Kaixue Ma

引用次数: 0

Packaged Low-Loss MISL Bandpass Filters With General Mixed-Coupling Circuit Model 封装低损耗MISL带通滤波器与通用混合耦合电路模型

IF 2.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-03-29 DOI: 10.1109/TCPMT.2025.3574813

Ming Yin;Kaixue Ma;Yi Wu

{"title":"Packaged Low-Loss MISL Bandpass Filters With General Mixed-Coupling Circuit Model","authors":"Ming Yin;Kaixue Ma;Yi Wu","doi":"10.1109/TCPMT.2025.3574813","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3574813","url":null,"abstract":"In this article, we demonstrate low-loss bandpass filters (BPFs) using two types of coupled-line structures with multilayer metal-integrated suspended line (MISL) technology. In addition, we introduce a novel circuit model that offers a straightforward and general explanation for the occurrence of transmission zeros (TZs) in mixed electric and magnetic (mixed-EM) coupling BPFs. The structure of this article is as follows. First, we introduce a new equivalent circuit model that accurately explains how multiple TZs are generated through mixed-coupling structures. At the same time, the proposed model is used to theoretically explain the cause of flat group delay. Second, we provide two specific design examples that demonstrate the flexibility in placing TZs. These examples show that TZs can be located on the right or both sides of the passband. Finally, we implement all the proposed BPFs with MISL. We conduct simulations and measurements to validate the effectiveness of the proposed theory and design techniques on the implemented BPFs. The results from both the simulations and tests confirm that filters designed based on MISL technology not only offer ease of fabrication but also possess very compact sizes with low losses.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 7","pages":"1446-1453"},"PeriodicalIF":2.3,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Selectivity Bandpass Filter in Glass Substrate RDL for Millimeter-Wave Applications 用于毫米波应用的玻璃基板RDL高选择性带通滤波器

IF 2.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-03-27 DOI: 10.1109/TCPMT.2025.3574071

Yanzhu Qi;Bo Yuan;Yazi Cao;Shichang Chen;Kanglong Zhang;Gaofeng Wang

{"title":"High-Selectivity Bandpass Filter in Glass Substrate RDL for Millimeter-Wave Applications","authors":"Yanzhu Qi;Bo Yuan;Yazi Cao;Shichang Chen;Kanglong Zhang;Gaofeng Wang","doi":"10.1109/TCPMT.2025.3574071","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3574071","url":null,"abstract":"A highly selective bandpass filter (BPF) utilizing branch-loaded resonators (BLRs) is presented. The filter is implemented using a redistribution layer (RDL) based on a glass substrate. It consists of four unitized BLRs with electric and magnetic couplings between the resonators. By adjusting the size and couplings of BLR, the passband and four transmission zeros (TZs) of BPF can be readily controlled. An equivalent circuit is proposed and discussed to illustrate the working principle. To validate the design, a BPF prototype with a center frequency of 21 GHz is fabricated and tested. The measured results indicate that the fabricated BPF has a 3-dB fractional bandwidth of 15%. A roll-off of 7.17 dB/GHz is achieved in the low sideband, while a roll-off of 3.44 dB/GHz in the high sideband, resulting in sharp-rejection filtering. Over 30 dB of suppression is achieved from 0 to 15.65 GHz, while over 27 dB from 29.4 to 50 GHz. Including the pads, the fabricated BPF has a compact size of <inline-formula> <tex-math>$0.185times 0.151~lambda g$ </tex-math></inline-formula>.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 7","pages":"1553-1556"},"PeriodicalIF":2.3,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Broadband Antenna With Folded Structure and Packaged Solar Cell 一种折叠结构的宽带天线和封装太阳能电池

IF 2.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-03-26 DOI: 10.1109/TCPMT.2025.3554580

Wenxing An;Chenxi Liu;Kai Han;Yi Wu;Yu Luo

{"title":"A Broadband Antenna With Folded Structure and Packaged Solar Cell","authors":"Wenxing An;Chenxi Liu;Kai Han;Yi Wu;Yu Luo","doi":"10.1109/TCPMT.2025.3554580","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3554580","url":null,"abstract":"A broadband folded antenna with horizontal and vertical structures is proposed for 2G/3G/4G/5G sub-6-GHz applications. With the packaging process, two solar cells are mounted on the horizontal structure to replace the metallic patch for green communications. Due to the limitation of the regular shape of the solar cell, the existing unidirectional designs have achieved a bandwidth of 60.5% with solar cells for radiation directly. Compared with previous work, this design proposes a folded structure for solar cell antennas to increase the design flexibility. This multiresonant structure with horizontal and vertical parts can stimulate high-order mode to enhance the broadband performance. Furthermore, this folded design can manipulate the current distribution for stable radiation performance. The measured −10-dB band is from 1.7 to 3.85 GHz with a relative bandwidth of 77.4%. Unidirectional patterns are obtained with a peak gain of 5.96 dBi. Solar cells cover 55% of the top area for energy self-sufficiency. With the capacity for photovoltaic power generation, this dual-function device would be a competitive candidate for future low-carbon communications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"1052-1059"},"PeriodicalIF":2.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143929823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Implementation of an Electrostatic Force-Based Microcirculation Cooling System for Microelectronic Devices 微电子器件静电力微循环冷却系统的设计与实现

IF 2.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-03-26 DOI: 10.1109/TCPMT.2025.3554926

Haoxuan Cheng;Lixing Zhou;Chunsheng Guo;Shiwei Feng;Yamin Zhang

{"title":"Design and Implementation of an Electrostatic Force-Based Microcirculation Cooling System for Microelectronic Devices","authors":"Haoxuan Cheng;Lixing Zhou;Chunsheng Guo;Shiwei Feng;Yamin Zhang","doi":"10.1109/TCPMT.2025.3554926","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3554926","url":null,"abstract":"This study describes the design of a radiator for use in microelectronic components. The suggested technology depends on generating electrostatic force by using the electric bias on the electrodes, which takes effect on the coolant within the radiator. The coolant vortex of the radiator is created by combining the structural design and the potential difference across the electrodes, and the electronic devices positioned at the top of the radiator can perform cooling and heat transfer. This idea is the foundation for the finite element simulation, which simulates the coolant flow and heat transfer in the radiator under electrostatic force, and the influence of other factors, such as channel diameter and spacing, is also investigated. Furthermore, the radiator is manufactured using the 3-D printing technique. The radiator is examined using charge and discharge, and a rudimentary implementation of the role of managing the coolant flow of the radiator is exhibited. The equipment controls the rate of radiator coolant by voltage and has low energy consumption as well as a handy and compact form.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 6","pages":"1259-1268"},"PeriodicalIF":2.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Accelerated Life Test and Prediction of Electromigration in Aluminum Interconnects Coupling Multiphysics Full Coupled Model With Optimized Atomic Flux Divergence Simulation 基于优化原子通量发散模拟的铝互连耦合多物理场全耦合模型电迁移加速寿命试验与预测

IF 2.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-03-26 DOI: 10.1109/TCPMT.2025.3554259

Xueliang Wang;Shuo Feng;Tao Luo;Jinyuan Zhang;Yaqian Zhang;Zhen Cui;Xuejun Fan;Guoqi Zhang;Jiajie Fan

{"title":"Accelerated Life Test and Prediction of Electromigration in Aluminum Interconnects Coupling Multiphysics Full Coupled Model With Optimized Atomic Flux Divergence Simulation","authors":"Xueliang Wang;Shuo Feng;Tao Luo;Jinyuan Zhang;Yaqian Zhang;Zhen Cui;Xuejun Fan;Guoqi Zhang;Jiajie Fan","doi":"10.1109/TCPMT.2025.3554259","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3554259","url":null,"abstract":"With the miniaturization and high-power requirements of microelectronic devices, the current density carried by interconnects in packaging structures continually increases and reaches the threshold of electromigration (EM) failure. In this study, we investigated the microstructure evolution and void formation in aluminum (Al) interconnects during EM at three different current densities (1/3/5 MA/cm<sup>2</sup>) and proposed a method coupling the fully coupled theory with an optimized atomic flux divergence method. The results show as follows. First, for the interconnects in integrated circuits, current density is the main factor affecting the EM lifetime of the interconnects in a certain temperature range. With the gradual increase of current density, the contribution of thermal transfer on EM cannot be ignored. The atomic concentration gradient and stress gradient can inhibit EM failure. Second, the increase of length and the decrease of width of interconnect will lead to the increase of atomic flux inside the structure, resulting in the accumulation of voids and atoms. Third, the structure is dynamically reconstructed after deleting the atoms below the failure threshold and the simulation results agree well with the experimental results. Compared with the traditional atomic flux divergence method, the improved atomic flux divergence method based on the fully coupled theory can better fit the change trend of atomic concentration after interconnect failure, and the failure time error is reduced by about 10%.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"949-958"},"PeriodicalIF":2.3,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143929782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0