IEEE Transactions on Components, Packaging and Manufacturing Technology最新文献_第7页

Reliability Modeling of Optical Fiber Couplers Based on Accelerated Tensile Cyclic Tests 基于加速拉伸循环试验的光纤耦合器可靠性建模

IF 3.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-08-01 Epub Date: 2025-12-10 DOI: 10.1109/TCPMT.2025.3642754

Assane Dione;Jean-François Morissette;Parvinder Kaur Gill;Palamanga Abdoul Rachide Onadja;Anthony Moulins;Julien Sylvestre

{"title":"Reliability Modeling of Optical Fiber Couplers Based on Accelerated Tensile Cyclic Tests","authors":"Assane Dione;Jean-François Morissette;Parvinder Kaur Gill;Palamanga Abdoul Rachide Onadja;Anthony Moulins;Julien Sylvestre","doi":"10.1109/TCPMT.2025.3642754","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3642754","url":null,"abstract":"This article introduces a methodology designed to predict the reliability of optoelectronic devices through accelerated testing. To imitate an industrial silicon photonics (SiPh) chip, we fabricated a sample with a similar geometry that incorporated V-groove alignment features for fiber coupling. Two reliability tests, the tensile cycling test (TCT) and the side TCT (STCT), were performed to accelerate sample failure and generate fatigue failure data. Both tests revealed the same failure mode, which is characterized by the appearance of slow intensity cycles in the insertion loss (IL) due to a growing gap between optical fibers and the adhesive at the joint, resulting from fiber displacement during tensile cycles after strain relief (SR) failure. The power law model (PM) was applied to the collected fatigue data for both reliability tests. The PM revealed that both tests shared a common failure mechanism, involving minor delaminations between the ribbon coating and the SR adhesive. Notably, the PM exponents from STCT <bold>(<inline-formula> <tex-math>$0.80~pm ~0.02$ </tex-math></inline-formula><bold>) and low-load TCT <bold>(<inline-formula> <tex-math>$0.812~pm ~0.002$ </tex-math></inline-formula><bold>) suggest a similar mechanism, while high-load TCT showed a distinct mechanism <bold>(<inline-formula> <tex-math>$2.324~pm ~0.001$ </tex-math></inline-formula><bold>), characterized by adhesive residues dragged by the ribbon after breakage due to high loads.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1781-1788"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148836395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Multiphysics Domain Decomposition Method for Transient Electro-Thermo-Mechanical Analysis 瞬态电-热-力分析的多物理场区域分解方法

IF 3.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-08-01 Epub Date: 2026-01-13 DOI: 10.1109/TCPMT.2026.3653793

Qi Qiang Liu;Hongyang Li;Shuai Zhang;Absalom E. Ezugwu;Wen-Sheng Zhao

{"title":"A Multiphysics Domain Decomposition Method for Transient Electro-Thermo-Mechanical Analysis","authors":"Qi Qiang Liu;Hongyang Li;Shuai Zhang;Absalom E. Ezugwu;Wen-Sheng Zhao","doi":"10.1109/TCPMT.2026.3653793","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3653793","url":null,"abstract":"This article presents a novel multiphysics domain decomposition method (DDM) for fully transient electro-thermo-mechanical analysis of complex electronic devices, based on the dual-primal finite element tearing and interconnecting (FETI-DP) framework. The global problem is reduced to a system involving interface and corner degrees of freedom, together with independent subdomain problems, thereby significantly lowering computational complexity. A nodal integration (NI) scheme constructs system matrices directly using Vandermonde and differentiation matrices, supporting nonuniform high-order interpolation without Gaussian quadrature. Physics-dependent subdomain partitioning enables tailored discretization for each physical field, enhancing modeling flexibility and algorithmic generality. The method maintains high accuracy in large-scale simulations, supports automatic corner-node selection, and is inherently parallelizable. Several benchmarks validate its accuracy, efficiency, and scalability in simulating challenging transient electro-thermo-mechanical problems.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1742-1753"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148837044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of Low Inductance Direct Bonded Flipchip Gallium Nitride Module 低电感直接键合倒装氮化镓模块的研制

IF 3.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-08-01 Epub Date: 2026-07-07 DOI: 10.1109/TCPMT.2026.3710777

Mohammad Dehan Rahman;Abu Shahir Md Khalid Hasan;Hamood Ur Rehman;H. Alan Mantooth;Xiaoqing Song

{"title":"Development of Low Inductance Direct Bonded Flipchip Gallium Nitride Module","authors":"Mohammad Dehan Rahman;Abu Shahir Md Khalid Hasan;Hamood Ur Rehman;H. Alan Mantooth;Xiaoqing Song","doi":"10.1109/TCPMT.2026.3710777","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3710777","url":null,"abstract":"Gallium nitride (GaN) power devices, with a bandgap energy nearly three times that of silicon, enable lower specific conduction resistance, faster switching speeds, and more compact, efficient power converters. However, their fast switching often leads to high voltage overshoot, posing significant challenges for high-frequency, high-power applications. Module packaging plays a critical role in mitigating these issues by reducing parasitic inductance while maintaining effective thermal management. This article presents a comprehensive comparison of three GaN high-electron-mobility transistor (HEMT) module packaging approaches: conventional wire bonding, solderball-based flipchip, and a novel direct flipchip architecture. Finite element analysis (FEA) is employed to evaluate thermal resistance and junction temperature, while Q3D simulation quantifies power loop inductance. Experimental validation is conducted through static characterization and double pulse testing. Results demonstrate that the proposed direct flipchip design achieves lower loop inductance than wire-bonded and solderball-based modules, while providing thermal performance comparable to conventional designs. Furthermore, its structure facilitates straightforward double-sided cooling, yielding nearly a <inline-formula> <tex-math>$20~^{circ }$ </tex-math></inline-formula>C reduction in peak junction temperature. This work introduces a promising packaging pathway for GaN power modules that overcomes key inductive and thermal bottlenecks, supporting high-frequency, high-power-density applications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1711-1719"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148837185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Additive Manufactured Millimeter-Wave Power Amplifier Package With Embedded Heat Spreader 带嵌入式散热器的增材制造毫米波功率放大器封装

IF 3.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-08-01 Epub Date: 2026-07-10 DOI: 10.1109/TCPMT.2026.3712201

Ruoke Liu;Benjamin Reams;W. Joel D. Johnson;Gökhan Mumcu;Jing Wang

引用次数: 0

Passive Lossy Transmission Line Model Based on the Generalized Method of Characteristics 基于广义特性法的无源损耗传输线模型

IF 3.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-08-01 Epub Date: 2026-07-06 DOI: 10.1109/TCPMT.2026.3710388

Mark Keran;Anestis Dounavis

引用次数: 0

Modeling of Stress-Driven Void Evolution at the Cu–Cu Hybrid Bonding Interface Cu-Cu杂化键合界面应力驱动空洞演化模型

IF 3.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-08-01 Epub Date: 2026-06-11 DOI: 10.1109/TCPMT.2026.3702803

Won-Chan Kim;Su-Jeong Kang;Seo-Rin Kim;Do-Gyun Kim;Kyung-Ho Park;Hyun-Yong Yu

{"title":"Modeling of Stress-Driven Void Evolution at the Cu–Cu Hybrid Bonding Interface","authors":"Won-Chan Kim;Su-Jeong Kang;Seo-Rin Kim;Do-Gyun Kim;Kyung-Ho Park;Hyun-Yong Yu","doi":"10.1109/TCPMT.2026.3702803","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3702803","url":null,"abstract":"Voids formed during the hybrid bonding process not only degrade electrical properties but also serve as initiation sites for electromigration-induced failures. Therefore, a quantitative method capable of predicting and analyzing interfacial voids is required. In this study, a finite element method (FEM) framework coupled with a creep model and a stress-driven migration model is developed to analyze the mechanism of void evolution at the hybrid bonding interface. In particular, the simulation investigates stress-driven mass transport along the hydrostatic stress gradient induced by the initial Cu surface roughness and thermomechanical loads. The proposed model is validated by quantitatively comparing simulation results with the interfacial voids observed in experimental hybrid bonding samples. For the largest measured void, the predicted diameter and volume are within 7.2% (diameter) and 12.7% (volume) error, respectively, and the predicted average void area fraction agrees with an absolute error of 0.006 percentage points. Parametric studies further quantify the dependencies of void growth on the initial Cu pad surface roughness and annealing conditions, providing practical process guidelines to mitigate interfacial voiding.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1702-1710"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148837184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information IEEE元件、包装与制造技术汇刊信息

IF 3.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-08-01 Epub Date: 2026-08-28 DOI: 10.1109/TCPMT.2026.3719802

引用次数: 0

IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors IEEE元件、封装与制造技术资讯汇刊

IF 3.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-08-01 Epub Date: 2026-08-28 DOI: 10.1109/TCPMT.2026.3719804

引用次数: 0

Design and Signal Integrity Analysis of Meander Coupled Microstrip Lines With an Embedded Interdigital Structure for FEXT Suppression 基于嵌入式数字间结构的弯曲耦合微带线的设计与信号完整性分析

IF 3.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-08-01 Epub Date: 2026-03-26 DOI: 10.1109/TCPMT.2026.3697190

Mikhail S. Murmansky;Dmitriy V. Klyukin;Yevgeniy S. Zhechev

{"title":"Design and Signal Integrity Analysis of Meander Coupled Microstrip Lines With an Embedded Interdigital Structure for FEXT Suppression","authors":"Mikhail S. Murmansky;Dmitriy V. Klyukin;Yevgeniy S. Zhechev","doi":"10.1109/TCPMT.2026.3697190","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3697190","url":null,"abstract":"This article presents an area-efficient method to suppress far-end crosstalk (FEXT) in high-density meandered coupled microstrip lines by integrating an interdigital stub structure within the intertrace gap. The proposed topology operates by selectively enhancing the mutual capacitance to equalize the even- and odd-mode phase velocities in inhomogeneous media. Unlike conventional guard traces or periodic structures that require additional routing area or ground vias, the integrated stubs provide FEXT mitigation while maintaining the meander’s original footprint and characteristic impedance stability (<inline-formula> <tex-math>$50~pm ~1.5~Omega $ </tex-math></inline-formula>). Full-wave simulations and measurements up to 20 GHz demonstrate broadband FEXT suppression, with <inline-formula> <tex-math>$| S_{41}|$ </tex-math></inline-formula> maintained below –20 dB up to 3 GHz. Time-domain analysis at 5 Gb/s confirms a <inline-formula> <tex-math>$1.46times $ </tex-math></inline-formula> reduction in peak FEXT and significant jitter improvement. The design achieves a <inline-formula> <tex-math>$1.9times $ </tex-math></inline-formula> improvement in area efficiency compared to the 3W spacing rule, offering a scalable solution for signal integrity in area-constrained PCB designs.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1930-1939"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148837226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stress–Strain Analysis and Fatigue Life Prediction of SnBiInZn High-Entropy Alloy QFN Solder Joints Under Random Vibration 随机振动下SnBiInZn高熵合金QFN焊点应力应变分析及疲劳寿命预测

IF 3.3 3区工程技术

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-08-01 Epub Date: 2026-03-26 DOI: 10.1109/TCPMT.2026.3678040

Gui Wang;Chunyue Huang;Jisheng Wei;Jingcheng Mo

{"title":"Stress–Strain Analysis and Fatigue Life Prediction of SnBiInZn High-Entropy Alloy QFN Solder Joints Under Random Vibration","authors":"Gui Wang;Chunyue Huang;Jisheng Wei;Jingcheng Mo","doi":"10.1109/TCPMT.2026.3678040","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3678040","url":null,"abstract":"A finite element model of SnBiInZn high-entropy alloy (HEA) QFN solder joints was established and subjected to modal analysis. A random vibration stress–strain simulation was conducted, and the simulation results were validated experimentally. Based on Manson’s empirical formula for high-cycle fatigue, combined with Miner’s linear cumulative damage theory and the Steinberg model, the fatigue life of different solder joint materials under random vibration loading was comparatively analyzed. Building upon the confirmed significant influence of key structural parameters—namely, solder joint height, pad length, and pad width—a regression analysis was performed using orthogonal experimental design combined with machine learning backpropagation (BP)/multilayer perceptron (MLP) models. A predictive model for the random vibration fatigue life of QFN solder joints was thereby established, enabling effective prediction of fatigue life under arbitrary combinations of structural parameter levels. The results indicate that among the four solder joint materials (SAC305, SAC387, 62Sn36Pb2Ag, and SnBiInZn HEA), SAC387 exhibits the shortest vibration fatigue life, while the SnBiInZn HEA demonstrates the optimal fatigue life, approximately 2.3 times that of SAC305. The developed BP/MLP model achieves high prediction accuracy, with the relative error between predicted and simulated values controlled within 5%.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1814-1822"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148837229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0