IEEE Transactions on Components, Packaging and Manufacturing Technology最新文献

{"title":"Cross-Alloy Transfer Learning With Transferability Assessment for Mechanical Property Prediction of Lead-Free Solders","authors":"Qais Qasaimeh;Waad Tarman;Daniel F. Silva;Saad Hamasha;Jia Liu","doi":"10.1109/TCPMT.2026.3716524","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3716524","url":null,"abstract":"The mechanical properties of lead-free solder alloys, including yield strength (YS), ultimate tensile strength (UTS), and elastic modulus, are critical indicators of reliability. These properties are typically obtained through experimental testing; however, generating comprehensive datasets through such experiments is costly and time-consuming, particularly for newly developed alloy systems. To address this limitation, this study proposes a transferability-guided transfer-learning (TL) framework that leverages data-rich conventional alloys (e.g., SAC305) to predict the UTS of newly developed, data-scarce alloys (e.g., Innolot). The proposed framework is benchmarked against conventional machine learning (ML) models, including artificial neural networks, random forests (RFs), Gaussian process regression (GPR), support vector regression (SVR), and extreme gradient boosting, demonstrating superior accuracy and robustness in low-data regimes. For example, for SACQ, TL reduces the mean absolute error (MAE) by more than 50% relative to the best conventional ML model. Transferability analysis is employed to evaluate the effectiveness of knowledge transfer from data-rich source alloys to data-scarce target alloys, indicating stronger transfer to SACQ than to Innolot. In addition, interpretability analysis confirms that the TL model captures physically consistent trends, including strength degradation with increasing temperature and aging, and strengthening with higher strain rates. Overall, this work demonstrates that transferability-guided TL enables accurate prediction of mechanical properties for newly developed alloys using minimal experimental data, reducing cost and accelerating the design of high-reliability lead-free solder materials.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 9","pages":"2002-2014"},"PeriodicalIF":3.3,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149014395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultracompact 2.5-D Integration of RF Interfaces and Opto-Electronic Devices via Silicon Interposer","authors":"Yueqi Zhao;Jinsheng Xu;Jia Li;Qian Zhang;Chen Hu;Qingwei Mo;Gang Luo;Chenhui Li","doi":"10.1109/TCPMT.2026.3698859","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3698859","url":null,"abstract":"This study presents a compact 2.5-D opto-electronic system-in-package solution based on a silicon interposer. This single package integrates opto-electronic chips, electrical chips, and directly soldered radio frequency (RF) interfaces (GPPO connector). This novel approach eliminates RF bond wires and enables direct connection between RF cables and optical chips, leading to a smaller form factor and improved signal integrity. Both single-ended and differential signal transmission lines are co-designed with the RF connector and patterned through wafer-level fabrication. The chips and connectors are connected via flip-chip bonding and solder reflow. Optical fiber is aligned through optical vias on the silicon interposer. In the demonstration, clear eye diagrams are achieved for both a vertical-cavity surface-emitting laser (VCSEL)-based optical transmitter and optical receiver. The directly modulated VCSEL exhibits a 106.25-Gb/s PAM4 eye diagram under a PRBS13Q pattern, while the receiver achieves a 25.78125-Gb/s NRZ.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 9","pages":"2135-2139"},"PeriodicalIF":3.3,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149014440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Equivalent Circuit Modeling of RF Degradation in TSVs for Millimeter-Wave Applications","authors":"Yong Wang;Minglong Wu;Kun He;Yue Tang;Jun Xing;Fengyi Huang;Yuehang Xu;Xusheng Tang;Huanpeng Wang","doi":"10.1109/TCPMT.2026.3717167","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3717167","url":null,"abstract":"Compared with numerical methods, the equivalent circuit method offers advantages in simulation speed and ease of implementation in commercial radio frequency (RF) electronic design automation (EDA) tools. This letter presents, for the first time, an RF degradation equivalent circuit model (ECM) for through-silicon vias (TSVs) that quantitatively characterizes their performance degradation. The proposed approach is validated through thermal shock stress testing. By integrating the Coffin–Manson reliability model into a degradation-sensitive TSV ECM, the model accurately predicts the evolution of RF performance under thermal loading. The experimental results based on thermal shock tests from <inline-formula> <tex-math>$- 70~^{circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$200~^{circ }$ </tex-math></inline-formula>C show excellent agreement between the simulated and measured S-parameters from 0.1 to 40 GHz, with accuracy exceeding 92%. The proposed model is suitable for millimeter-wave reliability assessment, particularly in advanced packaging applications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 9","pages":"2192-2195"},"PeriodicalIF":3.3,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149014446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine Learning-Based Co-Design of Advanced Flip-Chip Packages: Co-Optimization of Package Warpage, Die Stress, Solder-Joint Reliability, Thermal Management, and Signal Integrity","authors":"Mohammad Rafiee;Maryam Hasheminasab;Farough Agin;Farah El Siss","doi":"10.1109/TCPMT.2026.3674462","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3674462","url":null,"abstract":"Advanced flip-chip packages must satisfy thermal limits, chip–package interaction (CPI) constraints, solder-joint reliability, and increasingly tight signal-integrity (SI) margins. These requirements are strongly coupled. A design change that improves one metric can degrade another. Prior studies often optimize the thermal or thermomechanical metrics in isolation, or treat SI separately from package reliability. A unified workflow for concurrent thermal–mechanical–electrical screening at the package-architecture stage is still limited. This article presents an ML-assisted co-design workflow for advanced flip-chip packages. The framework combines thermomechanical FEA, a steady-state thermal model, and full-wave EM analysis. Six objectives are considered jointly: junction-to-ambient thermal resistance (<inline-formula> <tex-math>$boldsymbol {Theta }_{JA}$ </tex-math></inline-formula>), package warpage (<inline-formula> <tex-math>$w_{pkg}$ </tex-math></inline-formula>), maximum principal stress in the ELK/BEOL region (<inline-formula> <tex-math>$boldsymbol {sigma }_{ELK}$ </tex-math></inline-formula>), viscoplastic work-based fatigue indicators for first-level bumps and second-level ball grid array (BGA) (<inline-formula> <tex-math>$boldsymbol {Delta }W_{bump}$ </tex-math></inline-formula>, <inline-formula> <tex-math>$boldsymbol {Delta }W_{BGA}$ </tex-math></inline-formula>), and a differential insertion-loss metric (<inline-formula> <tex-math>$text {IL}_{DD21}$ </tex-math></inline-formula>, derived from <inline-formula> <tex-math>$S_{DD21}$ </tex-math></inline-formula>). A Latin hypercube sampling (LHS) spans key material, geometry, and thermal-stack parameters. SI is evaluated using discrete, manufacturable substrate-core options anchored by EM simulations. Random forest (RF) and XGBoost surrogates are trained (fivefold cross validation) for the thermomechanical and thermal objectives and embedded in NSGA-II to generate Pareto-optimal tradeoffs. The net flow method (NFM) is then used to rank Pareto candidates and identify a transparent “champion” design, which is resimulated as a physics-based check. The workflow enables rapid and explainable exploration of coupled tradeoffs. It also provides a practical screening method for early stage flip-chip package-architecture selection under mixed thermal, reliability, and SI constraints.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1823-1831"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148836397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of High-Conductive and Reliable Embedded Circuits in Glass Substrates via Pressure-Assisted Cu Nanoparticle Sintering","authors":"Guannan Yang;Dongchang Ma;Junyi Lu;Weiqiang Li;Chao Tang;Wenzhe Wang;Qiyuan Zhang;Yu Zhang;Guanghan Huang;Chengqiang Cui","doi":"10.1109/TCPMT.2026.3706784","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3706784","url":null,"abstract":"This study presents a fabrication method of high-conductive and reliable embedded circuits in glass substrates through pressure-assisted sintering of copper nanoparticle paste. First, inverted trapezoidal grooves were created on glass substrates by picosecond laser modification and hydrofluoric (HF) acid etching. Then, Cu particle paste with a 250-nm size and 75% solid content was filled in the grooves through a two-step filling process. Finally, the samples were hot-press sintered to form conductive circuits. Using the method, embedded circuits with a linewidth of <inline-formula> <tex-math>$30sim 100~mu $ </tex-math></inline-formula>m were fabricated on glass substrates, with a porosity of only 7.6% and a resistivity as low as <inline-formula> <tex-math>$8.53~mu Omega ~cdot $ </tex-math></inline-formula> cm. The embedded circuit structure enabled precise linewidth control and also enhanced the mechanical interlocking of the circuit with superior adhesion, demonstrated by <5% resistance change and no detachment after tape peel tests. Compared to the conventional electroplating method for circuit fabrication on glass substrates, this method eliminates the chemical residues and improves the reliability, offering a scalable solution for circuit fabrication on advanced glass substrates for 5G/6G RF components and optical modules.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1982-1992"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148836549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Power Handling Capability Evaluation and Uncertainty Quantification of Self-Packaged Substrate Integrated Suspended Line RF Balun Through Electromagnetic–Thermal Cosimulation","authors":"Yanning Chen;Hao-Xuan Zhang;Shi-Wei Guo;Jingwei Zhang;Kaiyuan Jin;Yi-Yao Wang;Enze Zhu;Yingzong Liang;Fang Liu;Hao Xie;Wen-Yan Yin","doi":"10.1109/TCPMT.2026.3673271","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3673271","url":null,"abstract":"This article presents a comprehensive investigation of electromagnetic–thermal coupling effect and average power handling capability (APHC) of a self-packaged substrate integrated suspended line (SISL) RF balun for high power applications. A fully coupled electromagnetic–thermal cosimulation is performed based on an in-house finite element method (FEM) solver, incorporating temperature-dependent material properties such as electrical conductivity, thermal conductivity, specific heat, permittivity, and loss tangent. The developed solver shows good agreement with COMSOL Multiphysics and high frequency structure simulator (HFSS) while achieving superior runtime performance. In particular, the thermal effects induced by both conductive and dielectric losses are accurately captured under the continuous-wave excitation. Through detailed parametric studies on key passive elements of spiral inductors and interdigital capacitors, the effects of metal layer thickness and operating frequency on thermal behavior and APHC are characterized and examined. In addition, a surrogate-based uncertainty quantification (UQ) framework is incorporated to assess the robustness of the S-parameter responses and peak temperature against dielectric-property variations. Numerical results reveal that increasing metal line thickness can enhance the APHC by suppressing Joule heating greatly, while dielectric losses contribute minimally to the rise in temperature. Confidence bands and Sobol sensitivity indices are reported to identify the dominant uncertainty contributors across frequency. The findings of this study can provide new insights into the design of high-power RF components with improved thermal reliability.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1901-1911"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148837233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Frequency-Selective Transition From Substrate-Integrated-Waveguide to Rectangular Waveguides for 77/130-GHz Automotive Radar Using Metal-Only Additive Manufacturing","authors":"Kevin A. P. van Hastenberg;Marianna V. Ivashina;A. Bart Smolders;Artem R. Vilenskiy","doi":"10.1109/TCPMT.2026.3697854","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3697854","url":null,"abstract":"This article presents a compact dual-band substrate integrated waveguide (SIW)-to-rectangular waveguide (RWG) frequency-selective transition (FST). This FST is a key enabler of future dual-band systems, such as automotive radar operating at 77 and 130 GHz. The proposed structure enables efficient signal routing from a single beamforming integrated circuit (BFIC) to two separate antenna arrays, leveraging waveguide (WG)-based filtering for high-frequency integration. A vertical transition topology is adopted to enhance mechanical robustness and to simplify assembly. This robustness is validated by performing a sensitivity analysis on the assembly. The structure is fabricated using aluminum-based laser powder-bed fusion (LPBF), enabling monolithic integration of complex millimeter-wave (mmWave) features. Experimental results demonstrate insertion loss (IL) around 2.5 dB for the low and high bands of the FST, with measured isolation exceeding 30 dB in the high band. The results validate the feasibility of the proposed FST and highlight the impact of manufacturing tolerances on mmWave performance. This work contributes a scalable, low-loss packaging solution for dual-band radar front ends in next-generation automotive and 6G sensing applications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1881-1893"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11538124","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148836402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation-Induced Degradation and Reliability Qualification of Epoxy Mold Compounds for Plastic Electronic Packaging","authors":"M. Asaduz Zaman Mamun;Greta Terzariol;Luke Fortner;Amar Mavinkurve;Muhammad A. Alam","doi":"10.1109/TCPMT.2026.3713280","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3713280","url":null,"abstract":"Over the last decade, declining launch costs and emerging market opportunities have driven a steady increase in the deployment of satellites in space. This shift has encouraged the use of plastic packaging over traditional ceramic alternatives due to advantages in size, weight, and cost. In addition to traditional space electronics, the emerging concepts, such as AI-enabled satellite systems, on-orbit data processing, and space-based high-performance computing (HPC) platforms, require radiation-tolerant semiconductor packaging materials capable of maintaining long-term reliability in harsh environments. In plastic packaging, the epoxy mold compounds (EMCs) effectively protect ICs in terrestrial applications; their reliability in high-radiation environments remains incompletely understood. This study explores critical reliability concerns and qualification protocols for EMCs in space mission contexts. In particular, this study 1) provides an experimentally validated assessment of proton-induced degradation mechanisms in industry-grade EMCs, including defect generation, surface roughness evolution, and mass loss; 2) establishes quantitative links between radiation exposure and material degradation through the combined use of SRIM-based damage modeling and experimental characterization; and 3) proposes a mission-dependent EMC qualification framework tailored to low Earth orbit (LEO), medium Earth orbit (MEO), and geostationary Earth orbit (GEO) radiation environments. The degradation mechanisms identified in this study are fundamental and broadly applicable to future generations of plastic-packaged ICs, supporting the judicious deployment of commercial plastic packaging in extreme space environments.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1720-1728"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148837043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication Tolerance Analysis and Validation for Millimeter-Wave Antenna-In-Package on Multilayer Substrates","authors":"Cheng-Yu Ho;Sheng-Chi Hsieh;Hong-Sheng Huang;Chen-Chao Wang;Chih-Pin Hung","doi":"10.1109/TCPMT.2026.3713470","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3713470","url":null,"abstract":"This work presents a structured validation workflow for assessing the impact of fabrication tolerances on a millimeter-wave (mmWave) antenna-in-package (AiP) implemented on 4-2-4 multilayer substrates using flip-chip chip-scale package (FCCSP) fabrication technology. Resonator-based test structures are designed and fabricated to determine optimal tolerance ranges, ensuring high design fidelity and manufacturing reliability in conventional printed circuit board (PCB) processes for mmWave applications. The critical dimensions of the fabricated structures are characterized using SEM and OM to support the tolerance evaluation. Electromagnetic (EM) simulations incorporating the measured variations show strong agreement with experimental results. The workflow is further validated through the fabrication and measurement of the mmWave AiP, providing practical guidelines for achieving high performance and manufacturing yield in multilayer PCB-based FCCSP processes.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1974-1981"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148837237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Investigation of Microparticles Loaded Auxiliary Encapsulation Layer on Angular Color Uniformity Improvement of Phosphor-Free and Full Spectra Color-Mixed LEDs","authors":"Xin Zhu;Chaodan Zheng;Limin Zhang;Weijun Huang;Qing Xiao;Wei Xiao;Qingfeng Wu;Xing Guo;Zongtao Li","doi":"10.1109/TCPMT.2026.3710857","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3710857","url":null,"abstract":"While color-mixed light-emitting diodes (cm-LEDs) have entered a practical application, their suboptimal angular color uniformity (ACU) performance persists as a critical challenge. In order to address this issue, a silicone resin microparticle (SRMPs)-doped auxiliary encapsulation layer (TAEL) was developed via a cost-effective raw material blending process. The experimental findings demonstrate that the incorporation of an SRMPs-doped TAEL leads to a significant reduction in the maximum correlated color temperature (CCT) deviation across viewing angles, ranging from −90° to 90°, from 1397 to 216 K. This beneficial effect becomes more pronounced as the SRMPs concentration increases. In addition, luminous output characterization results showed that applying the TAEL to a cm-LED packaging module (with an average CCT of ~3000 K) yielded a small luminous flux loss. The finite-difference time-domain (FDTD) method and Mie scattering theory were employed to analyze the optical behavior of SRMPs, revealing that forward scattering dominates, and that a tradeoff exists between transmission and scattering. Moreover, at a drive current of 100 mA, the luminous flux loss rates for SRMP concentrations of 0.08, 0.1, 0.3, 0.6, and 0.8 wt% are 3.2%, 3.5%, 5.6%, 5.8%, and 4.8%, respectively. A concentration range of 0.3–0.6 wt% is found to offer a favorable tradeoff between ACU improvement and luminous flux retention.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 8","pages":"1967-1973"},"PeriodicalIF":3.3,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148836394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}