{"title":"Deep Kernel-Based Hyperparameter Adaptive Learning and Frequency Response Predictions Using Transposed Convolutional Neural Network","authors":"Yiliang Guo;Yifan Wang;Joshua Corsello;Madhavan Swaminathan","doi":"10.1109/TCPMT.2025.3578968","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3578968","url":null,"abstract":"Electronic design automation (EDA) has unique challenges for addressing the design of systems for emerging applications due to the complexities involved, where multiple chiplets are integrated together on a heterogeneous platform. This challenge arises due to the long computation time required for simulation to capture all the necessary first order, second order, and sometimes third-order parasitic effects. Emerging machine learning (ML) and Gaussian process (GP) methods have helped expedite these processes. The deep kernel learning (DKL) model combines the structural properties of deep learning architectures with the nonparametric flexibility of kernel methods. It shows advantages by applying a GP with the corresponding kernel function to the final hidden layer of a deep neural network (DNN). However, DKL sometimes suffers from overfitting and scalability issues. In this article, we propose an adaptive learning framework for <italic>S</i>-parameter prediction, incorporating the spectral transposed convolutional neural network (S-TCNN) and DKL. The proposed model takes input parameters from the design space, upsamples them through transposed convolutional layers, and utilizes a GP kernel layer to approximate the desired kernel function. Additionally, the latent feature space adaptively compresses and extracts features from the input matrix, serving as a separate input parameter for the GP kernel layer. Further, we discuss the training strategy and model scalability. The proposed model is tested and evaluated using two advanced packaging examples. Results show a reduction in the number of hyperparameters by over 50% and approximately 40% improvements in loss and normalized mean-square error (NMSE).","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"1964-1972"},"PeriodicalIF":3.0,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Wet Etching Process Optimization and Consistency Enhancement of Massive Through Glass Vias Through Laser-Induced Wet Etching","authors":"Maoxiang Hou;Nan Liao;Junjie Zhang;Meihong He;Wei Feng;Yun Chen;Xin Chen","doi":"10.1109/TCPMT.2025.3578609","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3578609","url":null,"abstract":"Through glass via (TGV) technology presents a promising alternative for 3-D vertical interconnects in advanced packaging. As device integration progresses, the number of through vias in glass interposers is on the rise, which presents challenges in achieving high-quality and consistent processing of massive TGVs. This study utilizes laser-induced wet etching, complemented by multienergy field mixing assistance to produce highly consistent and significant quantities of TGVs on Corning Eagle XG (EXG) glass. Initially, a specialized wet etching system was developed, featuring an ultrasonic field, temperature control for a water bath, and sample reciprocation. The impact of these parameters on the morphology of the TGVs was systematically investigated. In addition, the study explored the mechanisms by which various etching parameters—such as temperature, etchant concentration, and ultrasonic power—affect the consistency of the TGVs. Ultimately, through the optimization of etching parameters via orthogonal experiments and statistical data sampling, it was confirmed that integrating an ultrasonic field, sample reciprocation, and rotation during the etching process significantly enhances the quality and consistency of the massive TGVs. The consistency of all TGVs (26898 per substrate) was enhanced with a relative standard deviation of 0.73% for the surface hole diameter and an etching rate of <inline-formula> <tex-math>$1.24~mu $ </tex-math></inline-formula>m/min. This advanced etching technology for high-consistent massive TGVs greatly improves the productivity and practicality of devices utilizing TGVs in 3-D packaging applications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1788-1794"},"PeriodicalIF":3.0,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144892379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ya Sun;Zhikang Yuan;Zhiwen Huang;Jun Hu;Jinliang He
{"title":"Jet-Dispensing-Based Assembly of Electric Field Adaptively Controlled Structure in Power Electronic Modules","authors":"Ya Sun;Zhikang Yuan;Zhiwen Huang;Jun Hu;Jinliang He","doi":"10.1109/TCPMT.2025.3578405","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3578405","url":null,"abstract":"In power modules, partial discharge (PD) at the triple points of “Copper-Ceramic-Silicone Gel” poses a significant challenge to the development of higher voltage and power density. This article utilized a reliable and controllable method, jet dispensing, to assemble the electric field adaptively controlled structure in power electronic modules to optimize the electric field distribution. The structure was composed of ZnO/epoxy resin nonlinear conductivity composites, with the thickness controlled at <inline-formula> <tex-math>$300~pm ~50~mu $ </tex-math></inline-formula>m. The assembled electric field adaptively controlled structure significantly enhanced the PD inception voltage (PDIV) of the module from 6.0 to 13.2 kV, with a 120.0% increase under the sinusoidal waves, and from 4.0 to 9.6 kV under positive polarity square-wave pulses, with an increased ratio of 140.0%. This article provides a new perspective on the application of nonlinear materials in power electronic modules.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1803-1810"},"PeriodicalIF":3.0,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144892369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jianyu Du;Lang Chen;Han Xu;Jinwen Zhang;Huaiqiang Yu;Chi Zhang;Wei Wang
{"title":"Reducing Warpage for Polymer-Based Embedded Silicon Fan-Out (P-eSiFO) Packaging During Thermal Process Loadings","authors":"Jianyu Du;Lang Chen;Han Xu;Jinwen Zhang;Huaiqiang Yu;Chi Zhang;Wei Wang","doi":"10.1109/TCPMT.2025.3578042","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3578042","url":null,"abstract":"Polymer-based embedded silicon-based fan-out (P-eSiFO) is a new packaging technique, which provides a way to high-density integration of high-performance chiplets. However, integrating multiple materials with diverse physical properties in the P-eSiFO leads to substantial warpage during downstream high-temperature manufacturing processes. In this study, a thermomechanical model of a P-eSiFO was developed to examine the thermomechanical with varying structural parameters and material selections. Test dies having an area of 0.5 cm<sup>2</sup> were embedded in a 500-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick silicon carrier following the P-eSiFO process. After careful parameters, optimization chip warpage can effectively decrease by over 60%. Experimental results showed that the height difference between the embedded chip and its silicon interposer can be reduced down to <inline-formula> <tex-math>$1~mu $ </tex-math></inline-formula>m with optimized parameters after high-temperature processes. This work provides useful insights for addressing multimaterial warpage concerns during thermal processes in advanced packaging.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"2033-2040"},"PeriodicalIF":3.0,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"100 Gb/s Multichannel TOSA With Low Tracking Error at the Industry Operating Temperature","authors":"Liang Zhang;Xiaochuan Xia;Haoran Ma;Yang Liu;Hongwei Liang","doi":"10.1109/TCPMT.2025.3576864","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3576864","url":null,"abstract":"Tracking error is a crucial metric for assessing optical alignment changes in transmitter optical subassemblies (TOSAs) under varying temperatures. We present a 100 Gb/s four-channel TOSA developed for industrial temperature ranges (–<inline-formula> <tex-math>$40~^{circ }$ </tex-math></inline-formula>C–<inline-formula> <tex-math>$+ 85~^{circ }$ </tex-math></inline-formula>C), featuring enhanced Z-sleeve thickness (0.45 mm) and optimized optical alignment. Finite-element analysis (FEA) showed that this increase reduced maximum stress from 150 to 94 MPa and displacement from 5.5 to <inline-formula> <tex-math>$3.6~mu $ </tex-math></inline-formula>m under identical shear loading by increasing the Z-sleeve thickness from 0.35 to 0.45 mm. Meanwhile, the root mean squares (rms) displacement ranges from 55.8 to <inline-formula> <tex-math>$7.6~mu $ </tex-math></inline-formula>m, achieving quasi-coaxial beam alignment. Moreover, thermal characterization revealed that the optimized 0.45 mm configuration consistently maintained tracking errors below 0.4 dB across all channels and temperatures. These results confirm that the dual strategy of mechanical reinforcement and precise optical path alignment effectively improves thermal stability, meeting the stringent requirements of high-density wavelength division multiplexing (WDM) systems for data centers and 5G/6G applications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 7","pages":"1557-1560"},"PeriodicalIF":2.3,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jin Wu;Yuefeng Hou;Liqi Yang;Zhenshuai Fu;Meicheng Liu;Dawei Zhang;Mingtao Zhang;Kaixue Ma
{"title":"Low-Loss Self-Packaged Full Phase Shift Reflection-Type Phase Shifter Based on Hybrid Integrated Suspended Line Technology","authors":"Jin Wu;Yuefeng Hou;Liqi Yang;Zhenshuai Fu;Meicheng Liu;Dawei Zhang;Mingtao Zhang;Kaixue Ma","doi":"10.1109/TCPMT.2025.3576350","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3576350","url":null,"abstract":"A low-loss and self-packaged full phase shift reflection-type phase shifter (RTPS) based on the hybrid integrated suspended line (HISL) technology is introduced. The proposed RTPS consists of a 90° branch line coupler and two tunable parallel <italic>L</i>–<italic>C</i> loads connected to the through port and coupled ports. First, an enhanced two-step phase extraction method is proposed, reducing the evaluation state of the RTPS and achieving the minimal phase step while keeping the number of states unchanged. Second, the HISL technology is adopted in the design to achieve low insertion loss (IL). Due to the self-packaging characteristics of HISL, the proposed RTPS effectively avoids interference with surrounding circuits and is highly integrated. Third, the low-power digital tunable capacitor (DTC) with a bus interface is used as the tunable load, making the RTPS easy to integrate into large-scale phased array systems. Finally, a prototype is fabricated by using the sheet metal and PCB process. At the center frequency of 2.45 GHz, the proposed RTPS achieved a measured phase shift range (PSR) of 368° under 128 sweeping states with an IL of 0.9–1.6 dB, and the figure of merit (FoM) is 230°/dB.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"2010-2018"},"PeriodicalIF":3.0,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xinyue Chang;Bjorn Vermeersch;Herman Oprins;Melina Lofrano;Vladimir Cherman;Seongho Park;Zsolt Tokei;Ingrid De Wolf
{"title":"Thermal Modeling and Analysis of Equivalent Thermal Properties for Advanced BEOL Stacks","authors":"Xinyue Chang;Bjorn Vermeersch;Herman Oprins;Melina Lofrano;Vladimir Cherman;Seongho Park;Zsolt Tokei;Ingrid De Wolf","doi":"10.1109/TCPMT.2025.3564833","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3564833","url":null,"abstract":"In this article, we introduce a modular thermal modeling methodology, BTE-FEM, that combines the Boltzmann transport equation (BTE) with finite element modeling (FEM) for simulations of advanced back-end-of-line (BEOL) stacks with high accuracy and efficiency. BTE-FEM is validated against direct BTE-based simulations using simplified BEOL stack test cases across various technology nodes and via connectivity configurations. It is demonstrated that conventional FEM, using bulk material properties, increasingly underestimates the BEOL thermal resistance as the technology node scales. In contrast, the BTE-FEM developed in this study demonstrates good agreement with direct BTE simulations for all test cases, but at much shorter runtimes. The impact of material properties, metal densities, and boundary conditions on the derived BEOL thermal properties are benchmarked and the developed models are experimentally validated at two distinct technology nodes. Finally, the developed methodology is applied to a 12-layer, 18 nm metal pitch BEOL stack from an A10 high density core design, demonstrating its ability to simulate complex and realistic BEOL routings with the precision of direct BTE simulations while substantially reduced simulation time. This approach enables extensive design of experiments (DOEs) for fast turnaround design iterations.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1708-1716"},"PeriodicalIF":3.0,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reliability Analysis of MEMS Millimeter-Wave Micro-Transmission Line","authors":"Lifang Zhao;Kaixue Ma;Yongqiang Wang","doi":"10.1109/TCPMT.2025.3563936","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3563936","url":null,"abstract":"The millimeter-wave micro-transmission line with GSG turning point is designed and prepared in this letter. The circuit breaking problem occurs in the initial measurement. Through the thermal stress analysis, material interface matching, and process improvement, the tested insertion loss at 40 GHz is 0.2 dB/cm, and the reflection loss is better than 17.32 dB. After three thermal reflow at <inline-formula> <tex-math>$220~^{circ }$ </tex-math></inline-formula>C and 500 h high-temperature storage at <inline-formula> <tex-math>$150~^{circ }$ </tex-math></inline-formula>C, there is no obvious difference between the performance tests before and after. It shows that the structure stability of the millimeter wave micro-transmission line is very good, which provides a reference solution for the key technical problems in the preparation process of micro-transmission line and reliability verification.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 6","pages":"1269-1274"},"PeriodicalIF":2.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Bonding Mechanism of Cold Gas-Sprayed Copper Particles Onto Aluminum Nitride Substrates for Power Electronics Packaging","authors":"Margie Guerrero-Fernandez;Ozan Ozdemir;Zhu Ning;Paul Allison;Brian Jordon;Pedro Quintero","doi":"10.1109/TCPMT.2025.3564520","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3564520","url":null,"abstract":"This study investigates the bonding mechanisms between cold gas-sprayed (CGS) copper (Cu) particles and aluminum nitride (AlN) substrates. A 300-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick Cu coating was successfully deposited and characterized by electron backscatter diffraction (EBSD) techniques revealing microstructural evolution differences between the bulk of the Cu coating and the Cu/AlN interface. The Cu/AlN interface showed finer, homogeneous grains, and the evidence of dynamic recrystallization, while the distal portion of the coating exhibited larger, heterogeneous grains with higher intragranular strains. Image quality (IQ) maps and grain orientation spread analysis confirmed lower strains at the Cu/AlN interface that correlated with smaller microhardness readings suggesting a recrystallization phenomenon. Finite-element simulations of particle impact revealed large plastic deformations, jetting, and a thermal response surpassing the recrystallization temperature of copper. These findings are indicative of a bonding mechanism involving mechanical interlocking and dynamic recrystallization at the Cu/AlN interface. The roughened AlN substrate, with an average surface roughness (Sa) of <inline-formula> <tex-math>$0.5~mu $ </tex-math></inline-formula>m, promoted mechanical interlocking, thus enhancing adhesion. This work provides insights into optimizing CGS for metal coatings on ceramic substrates, particularly in electronic packaging applications, where strong metal-ceramic adhesion is critical for reliable operation in harsh environments.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 7","pages":"1511-1522"},"PeriodicalIF":2.3,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144581488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nicholas Sturim;Premjeet Chahal;Matthew Hodek;John D. Albrecht;John Papapolymerou
{"title":"Miniaturized Millimeter-Wave Multilayer Filter Design Using Additive Manufacturing","authors":"Nicholas Sturim;Premjeet Chahal;Matthew Hodek;John D. Albrecht;John Papapolymerou","doi":"10.1109/TCPMT.2025.3564215","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3564215","url":null,"abstract":"This article presents an innovative, fully additive manufactured approach to millimeter-wave multilayer circuits. An aerosol jet printer is used to fabricate a multilayer stepped-impedance low-pass filter. By leveraging the second layer for miniaturization, we achieve a more compact design. By precisely controlling conductor separation and utilizing 3-D printing technology, we were able to optimize the width of the high- and low-impedance segments for optimal filter performance. Two filter types were successfully fabricated: a low-pass microstrip filter and a low-pass stripline filter, both with a cutoff frequency near 29 GHz and exhibiting acceptable stopband attenuation. The stripline configuration allows for a 36% decrease in the stripline waveguide conductor area while achieving a great passband insertion loss of just 0.62 dB, enabled by aerosol jet printing (AJP). The line loss of both designs was characterized using a microstrip through line and a stripline through line. Both designs demonstrated low overall loss, with the microstrip line exhibiting a loss of 0.26 dB/mm and the stripline having a loss of 0.37 dB/mm at 29 GHz. This work demonstrates a multilayer integration solution and offers an advantage in reducing the size of RF circuits such as filter banks for next-generation integrated RF front ends.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 6","pages":"1170-1178"},"PeriodicalIF":2.3,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}