Jihun Kim;Nam Ki Hwang;Seul Ki Hong;Min Ju Kim;Jong Kyung Park
{"title":"Advanced Polymer Dry Etching Processes for Enhanced Cu/Polymer Hybrid Bonding","authors":"Jihun Kim;Nam Ki Hwang;Seul Ki Hong;Min Ju Kim;Jong Kyung Park","doi":"10.1109/TCPMT.2025.3584053","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3584053","url":null,"abstract":"As semiconductor devices continue to demand higher performance and density, Cu/polymer hybrid structures have gained significant attention due to their potential to replace conventional SiO<sub>2</sub> dielectrics. In this study, we explore the optimization of dry etching processes for 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane (p<inline-formula> <tex-math>$text {V}_{{3}}text {D}_{{3}}$ </tex-math></inline-formula>) a low-dielectric constant polymer (<inline-formula> <tex-math>$k =2.2$ </tex-math></inline-formula>), used in Cu/polymer hybrid structures. By employing initiated chemical vapor deposition (iCVD) high purity, p<inline-formula> <tex-math>$text {V}_{{3}}text {D}_{{3}}$ </tex-math></inline-formula> thin films with a thickness of 200 nm were deposited. Various gas mixtures, including O<sub>2</sub>, CF<sub>4</sub>, and Ar, were used for dry etching to evaluate the optimal etching conditions. Results show that the most anisotropic etching occurred with an O<sub>2</sub>/Ar gas mixture, achieving an etching depth of 200 nm and near-vertical sidewalls. Detailed analysis of the etching mechanism was conducted using Gibbs free energy calculations and X-ray photoelectron spectroscopy (XPS). The findings of this study provide valuable insights into the fabrication of high-density, high-performance Cu/polymer hybrid structures for next-generation semiconductor devices.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1795-1802"},"PeriodicalIF":3.0,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144892374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2025.3570046","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3570046","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 6","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11053191","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2025.3570044","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3570044","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 6","pages":"1384-1384"},"PeriodicalIF":2.3,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11053190","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information","authors":"","doi":"10.1109/TCPMT.2025.3570042","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3570042","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 6","pages":"C2-C2"},"PeriodicalIF":2.3,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11053188","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"VO2 Switch-Based Tunable 3-D Cavity Filters","authors":"Junwen Jiang;Raafat R. Mansour","doi":"10.1109/TCPMT.2025.3582617","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3582617","url":null,"abstract":"This article presents the design and implementation of vanadium oxide (VO<sub>2</sub>) switch-based tunable 3-D cavity filters. The proposed concept employs switched strip lines integrated with cavity resonators to tune their resonance frequencies. This eliminates the need to use variable/switched capacitors, which are known to degrade the loaded <italic>Q</i> of the filters over the tuning range. Combline filters and dielectric filters integrated with VO<sub>2</sub> switches are designed, fabricated, and measured. The measurement results verify the tunability and feasibility of using the proposed tuning scheme to realize a relatively high-<italic>Q</i> VO<sub>2</sub> combline and dielectric resonator tunable filters that can maintain their <italic>Q</i> values over the tuning range.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1717-1725"},"PeriodicalIF":3.0,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Cross Coupled Substrate Integrated Waveguide Filter With Quasi-Elliptic Response and Wide Stopband","authors":"Peng Chu;Jialong Zhou;Wenyu Zhang;Fang Zhu;Li Cheng;Leilei Liu;Ke Wu","doi":"10.1109/TCPMT.2025.3581956","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3581956","url":null,"abstract":"This article proposes a new technique for the cross coupled substrate integrated waveguide (SIW) filter to achieve a wide stopband in addition to a quasi-elliptic response. It exploits the field distribution properties of spurious modes in multilayers to prevent them from transmitting through both the main and cross coupling paths without affecting its quasi-elliptic fundamental passband, as opposed to the previously reported designs that can suppress spurious modes only in their main coupling path. An example is provided. Without using a hybrid structure that compromises the superiority of SIW, and with a shielding structure that is suitable for high-performance and high-frequency applications, it achieves a quasi-elliptic response with multiple transmission zeros (TZs) and a wide stopband with adequate suppression. The proposed technique should be effective for developing SIW filters in microwave and wireless circuits and systems.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1726-1731"},"PeriodicalIF":3.0,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lei Wang;Jianke Li;Quan Huang;Chengyang Luo;Guoguang Lu
{"title":"A New High-Sensitivity Near-Field Composite Probe With Mirror Symmetry Design","authors":"Lei Wang;Jianke Li;Quan Huang;Chengyang Luo;Guoguang Lu","doi":"10.1109/TCPMT.2025.3582405","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3582405","url":null,"abstract":"In this letter, a new high-sensitivity near-field composite probe with mirror symmetry design is presented. Unlike conventional differential magnetic-field probes that can only measure a magnetic-field component, a new differential composite probe with series loops is proposed to simultaneously test electric and magnetic field components. To increase the detection sensitivity, a pair of series loops are inserted into the conventional differential loops, which form the composite probe. Note that these series loops and differential loops are connected in series, not in parallel. The equivalent circuit models on the detection loops are used to explain the operating mechanism of the sensitivity enhancement of this design. In addition, four evolutionary models are simulated, compared, and studied to verify the effectiveness of the sensitivity enhancement. Moreover, the composite probe is together simulated, manufactured, and measured to verify the design rationality. The measured results reveal that the magnetic-field sensitivities of the probe exceed –40 dB at 0.6–5.4 GHz, while the electric-field sensitivities of that are over –40 dB at 1.3–6 GHz, respectively. Therefore, the designed composite probe not only has higher detection sensitivity but also can test the electric and magnetic field components simultaneously.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1666-1671"},"PeriodicalIF":3.0,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zai-Cheng Guo;Weijun Li;Wangtao Ye;Xuedao Wang;Yi Wang
{"title":"Negative Dispersion-Less Coupling Structure and Its Application for Realization of Extremely Small Negative Couplings in Waveguide Filters","authors":"Zai-Cheng Guo;Weijun Li;Wangtao Ye;Xuedao Wang;Yi Wang","doi":"10.1109/TCPMT.2025.3582009","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3582009","url":null,"abstract":"Negative coupling is widely used in microwave filter design, especially for filters with finite transmission zeros (TZs). Conventionally, negative coupling is realized through capacitive irises or probes. However, when the negative coupling is small, capacitive irises need to be very narrow, which presents significant challenges in manufacturing and tuning the filters. In this article, a negative dispersion-less coupling structure (NDLCS) is proposed based on a partial-height post for waveguide filters. Compared to capacitive irises, the NDLCS achieves a comparable effect while allowing the minimum dimension of coupling structures to increase from tens of micrometers to a few millimeters. The NDLCS also enables the installation of tuning screws, which significantly lowers both the manufacturing difficulty and the sensitivity to manufacturing tolerances. Two waveguide filters with narrow bandwidths are designed using the proposed NDLCS and compared to filters with conventional capacitive irises and dispersive coupling structures. The investigated and measured results demonstrate the advantages of the proposed NDLCS in manufacturing and tuning when realizing small negative coupling for waveguide filters.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1644-1651"},"PeriodicalIF":3.0,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"3-D Packaging Technologies for Advanced Integrated Photonics Modules: A Review","authors":"Jean Charbonnier;Thierry Mourier;Stéphane Bernabé","doi":"10.1109/TCPMT.2025.3582041","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3582041","url":null,"abstract":"Recent developments in photonics applications, in the fields of datacom, high-performance computing, and integrated optical sensors, have accelerated the trend toward electronic/optical convergence announced over ten years ago. The growing maturity of silicon photonics and its use in conjunction with advanced packaging techniques (3-D stacking, through silicon via (TSV), and fan-out wafer-level packaging) have contributed to the emergence of two new objects that are becoming standards: co-packaged optics (CPOs) and photonic interposers, both leveraging photonic chiplets. This article reviews the emergence of these two objects, as well as the most recent achievements.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1565-1580"},"PeriodicalIF":3.0,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Na Ji;Guangxu Shen;Wenjie Feng;Quan Xue;Wenquan Che
{"title":"Packaged Ka-Band IPD Bandpass Filter Using In-Phase and Out-of-Phase Mixed Couplings","authors":"Na Ji;Guangxu Shen;Wenjie Feng;Quan Xue;Wenquan Che","doi":"10.1109/TCPMT.2025.3581320","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3581320","url":null,"abstract":"By effectively merging in-phase and out-of-phase electric and magnetic mixed couplings in an in-line fourth-order topology, a high-selectivity millimeter-wave (mm-wave) bandpass filter (BPF) is proposed. The use of in-phase and out-of-phase mixed couplings introduces pairs of 180° phase shift, resulting in multiple transmission zeros (TZs) generated outside the passband, whose locations can be independently controlled by adjusting the coupling strength. Furthermore, the equivalent circuit models are analyzed and discussed to elucidate the operating mechanism. For experimental verification, a 25-GHz in-line fourth-order high-selectivity BPF is designed and fabricated using gallium arsenide (GaAs)-based integrated passive device (IPD) process. Compared with prior works, the proposed BPF shows the merits of high selectivity, wider rejection bandwidth, and low insertion losses, making it well-suited for enhancing receiver sensitivity and suppressing interference in satellite communication systems.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"1750-1758"},"PeriodicalIF":3.0,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}