{"title":"Fabrication-Induced Warpage Characterization Analysis of Micro-LED Fan-Out Packaging","authors":"Chang-Chun Lee;Meng-Kai Shih;Zi-An Huang;Yao-Jun Tsai;Ming-Hsien Wu;Ching-Ya Yeh;Kevin-Dao;Yung-Yu Hsu","doi":"10.1109/TCPMT.2025.3538039","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3538039","url":null,"abstract":"The advancement of light-emitting diode (LED) packaging technology has been driven by the increasing demand for high-performing and compact lighting solutions. Traditional packaging methods, such as chip-on-board technology and surface-mount technology, face challenges in meeting the demands for high input/output density and effective thermal management. This scenario has led to the adoption of advanced packaging technologies, including wafer-level packaging (WLP) and fan-out (FO) technology, which offer advantages such as improved surface flatness, reduced dielectric loss, and cost-effectiveness. This study presents a novel FO-LED architecture with a redistribution layer (RDL)-first design to achieve high density and thin form factors. A 3-D finite element analysis (FEA) model that incorporates equivalent material properties for the RDL and Cu pillar bumps is developed to analyze the warpage behavior induced during the FO-LED assembly fabrication process. The model’s validity is confirmed by comparing simulation results with experimental measurements obtained at various stages of FO-LED fabrication. A parametric study is conducted to evaluate the impact of four control factors—Young’s modulus of polyimide (PI), coefficient of thermal expansion (CTE) of PI, RDL thickness, and curing temperature—on warpage performance. The findings highlight that the warpage in the FO-LED is significantly affected by the CTE mismatch between the RDL, the LED, and the silicon substrate, with the properties of the PI material playing a crucial role. These insights offer valuable guidance for the design and optimization of robust FO-LED packages.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 3","pages":"603-612"},"PeriodicalIF":2.3,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Haoze Yang;Qiang Zhang;Yanzhao Li;Mengtao Xiao;Jiameng Zhang;Junhui Li
{"title":"Effect of Ultrasound on the Reliability of Ni/Sn/Ni Micro Copper Pillar Solder Joints","authors":"Haoze Yang;Qiang Zhang;Yanzhao Li;Mengtao Xiao;Jiameng Zhang;Junhui Li","doi":"10.1109/TCPMT.2025.3537341","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3537341","url":null,"abstract":"As the interconnection density of chips continues to increase, the reliability of solder joints under complex working conditions has become increasingly prominent. Therefore, altering the interfacial microstructure of solder joints to enhance their reliability has become a crucial direction in the study of chip service reliability. The research investigates the regulation of ultrasonic treatment on the electromigration (EM) resistance, thermal aging resistance, and the performance under thermoelectric coupling of microcopper pillar solder joints. It analyzes the corresponding failure modes, the growth behavior of intermetallic compounds (IMCs), and the influence of <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Sn grain orientation on EM resistance. The results indicate that ultrasonic regulation has limited improvement on the thermal aging resistance and EM resistance under thermoelectric coupling of Ni/Sn/Ni structured microcopper pillar solder joints. However, by increasing the initial IMC thickness and altering the <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Sn grain structure in the solder, the EM resistance of the solder joints is significantly enhanced. Under thermoelectric coupling, for microcopper pillar solder joints with a lower proportion of Sn-based solder, Cu3Sn exhibits cathodic polarity growth. When the angle between the c-axis of the <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Sn grains and the current direction is large, EM is effectively suppressed; conversely, when the angle is small, EM is promoted. These findings provide theoretical insights for improving the reliability of micro copper pillar solder joints in practical applications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 4","pages":"740-747"},"PeriodicalIF":2.3,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143820332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ultracompact On-Chip Branch Line Coupler Based on Through-Silicon Via Technology","authors":"Yue Deng;Fengjuan Wang;Xiangkun Yin;Sa Xiao;Yuan Yang;Ningmei Yu","doi":"10.1109/TCPMT.2025.3533615","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3533615","url":null,"abstract":"A compact branch line coupler with lumped elements on silicon substrate is realized by employing through-silicon via (TSV) technology, in which the lumped elements adopt high-density, high-<italic>Q</i> 3-D solenoid inductors, and double-layer interdigital capacitors, and the proposed coupler is fabricated and measured. The results show that the return loss of the coupler is less than -19.7 dB, the isolation is less than -15.2 dB at 4.7–5.3 GHz, and the phase imbalance within the operating frequency range is within ±1.2°. In addition, the size of the branch line coupler is only <inline-formula> <tex-math>$1.2times 1.36$ </tex-math></inline-formula> mm<sup>2</sup> (<inline-formula> <tex-math>$0.069times 0.078~lambda _{text {g}}^{2}$ </tex-math></inline-formula>).","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 3","pages":"623-626"},"PeriodicalIF":2.3,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Current Advances and Outlooks in Hybrid Bonding","authors":"John H. Lau","doi":"10.1109/TCPMT.2025.3533926","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3533926","url":null,"abstract":"In this study, the recent advances and trends of Cu-Cu hybrid bonding (HB) will be investigated. Emphasis is placed on the design, materials, process, fabrications, reliability, challenges (opportunities), advantages and disadvantages, and examples of Cu-Cu bumpless HB. Specially, the works by Sony, CEA-Leti, Samsung, imec, Brewer Science, EVG, Yokohama National University, University of Tsukuba, SUSS MicroTec, Micron, Intel, Washington State University, Arizona State University, Applied Materials, National Yang Ming Chiao Tung University (NYCU), Synopsys Inc., BE Semiconductor Industries, TSMC, AMD, ASE, Tokyo Electron America, Fraunhofer IZM, AIST, Okamoto Machine Tool Works, SUNY Binghamton, IBM Research, Daicel, Mitsui, Industrial Technology Research Institute (ITRI), Nanya Technology Corporation (NTC), Brewer Science, Tsinghua University, and Semiconductor Technology Innovation Center will be discussed. Also, some recommendations will be provided.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 4","pages":"651-681"},"PeriodicalIF":2.3,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information","authors":"","doi":"10.1109/TCPMT.2025.3527349","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3527349","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 1","pages":"C2-C2"},"PeriodicalIF":2.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10850520","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Antonio Maffucci;Swagato Chakraborty;Rajen Murugan
{"title":"Foreword: Special Section on “Novel Design Methodologies to Address the Challenges of Modern-Day Chip-Package-System Integration”","authors":"Antonio Maffucci;Swagato Chakraborty;Rajen Murugan","doi":"10.1109/TCPMT.2024.3518872","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3518872","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 1","pages":"1-3"},"PeriodicalIF":2.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10850518","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2025.3527355","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3527355","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 1","pages":"235-235"},"PeriodicalIF":2.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10850519","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2025.3527353","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3527353","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 1","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10850497","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Taiyu Wang;Songzhao Gu;Sichen Liu;Xiaochen Xie;Shuang Zhao;Pengrong Lin;Zhibo Qu;Yong Wang;Xiuchen Zhao;Gang Zhang;Yongjun Huo;Chin C. Lee
{"title":"Low-Temperature Solid-State Bonding of Microbumps Arrays With Flat-to-Convex Structure via Plasma-Induced Silver Oxide Nanoparticles","authors":"Taiyu Wang;Songzhao Gu;Sichen Liu;Xiaochen Xie;Shuang Zhao;Pengrong Lin;Zhibo Qu;Yong Wang;Xiuchen Zhao;Gang Zhang;Yongjun Huo;Chin C. Lee","doi":"10.1109/TCPMT.2025.3532769","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3532769","url":null,"abstract":"For advanced 3-D-IC packaging, we have previously invented a new bonding technology utilizing plasma-induced Ag2O nanoparticles (Ag2O NPs) and disclosed the growth mechanism of plasma-induced Ag2O NPs. In this study, we first established suitable parameters for the growth of plasma-induced Ag2O NPs on Ag films deposited by magnetron sputtering. Moreover, a novel structure, namely a flat-to-convex structure, was designed to facilitate the bonding of a microbump array and a surface of plasma-induced Ag2O NPs atop the as-deposited Ag film. This structure enhances the localized pressure at the interface between the microbumps and the film, thereby promoting the lateral plastic deformation of the microbumps. Additionally, the Ag-Ag direct bonding of flat-to-convex structure was achieved by applying an oxygen and argon plasma to the surface of Ag films, followed by in situ reduction of plasma-induced Ag2O NPs under a low temperature (<inline-formula> <tex-math>$220~^{circ }$ </tex-math></inline-formula>C). The in situ reduction of silver oxide wetted the original interface, enhancing surface diffusion and promoting material connection at the atomic scale, as well as the merging of grains at the original bonding interface. This provides a highly reliable design for applications in flip-chip interconnects and 3-D-IC heterogeneous integration.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 4","pages":"682-696"},"PeriodicalIF":2.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mian Tao;Chi-Chuen Jeffery Lo;Chi-Ying Tsui;Shi-Wei Ricky Lee
{"title":"Highly Manufacturable Packaging of an Implantable Episcleral Surface Stimulator With Reliability and Safety Validations","authors":"Mian Tao;Chi-Chuen Jeffery Lo;Chi-Ying Tsui;Shi-Wei Ricky Lee","doi":"10.1109/TCPMT.2025.3531795","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3531795","url":null,"abstract":"This study presents an innovative packaging scheme for an implantable medical device (IMD) which is an episcleral surface stimulator applying trans-scleral electrical stimulation. The stimulator employs an application-specific integrated circuit (ASIC) to facilitate wireless connection and electrical stimulation. The proposed packaging scheme considers the safety, functionality, reliability, and particularly manufacturability of the stimulator. The packaging process is structured into chip-level, component-level, and device-level. At the initial chip-level packaging, a silicon interposer is introduced to enhance the manufacturability and increase the bonding strength. At the component-level packaging, a flexible printed circuit (FPC) integrates all the components to enable the electrical functions. The FPC is curved by the bending method. The specialized design of the stack and layout addresses the biocompatibility concern. Finally, the device-level packaging incorporates Parylene-C coating and silicone encapsulation to form the final stimulator. At this packaging stage, a novel strategy is introduced eliminating the challenging Parylene-C etching process while streamlining the bending and the silicone encapsulation processes. The outstanding manufacturability achieved from the proposed packaging scheme allows consistent product quality, leading to trustable reliability validation. The reliability of the stimulator is approved by a high-temperature saline soaking test which indicates a minimum 6.1-year lifespan. Additionally, trial surgeries on a rabbit validate the shape and softness, and the biocompatibility of the stimulator is also confirmed by implantation tests on mice.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 4","pages":"640-650"},"PeriodicalIF":2.3,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}