IEEE Transactions on Components, Packaging and Manufacturing Technology最新文献

{"title":"Planarization of Cu/Polymer Surfaces via Fly Cutting: Influence of Polymer Properties and Processing Parameters","authors":"Suin Jang;Hoogwan Lee;Sarah Eunkyung Kim","doi":"10.1109/TCPMT.2026.3667463","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3667463","url":null,"abstract":"As the demand for fine-pitch and high-density interconnects continues to increase, hybrid bonding has emerged as a promising technology to replace conventional 3-D integration techniques. While chemical mechanical polishing (CMP) is widely used for Cu/dielectric structure planarization, it has limitations when applied to polymer materials due to surface damage and material loss caused by polymers’ low hardness and high ductility. In this study, we propose fly cutting as an alternative to CMP—a mechanical, slurry-free planarization process—and evaluate its applicability to Cu/polymer structures. We selected rigid polyimide (PI) and soft polydimethylsiloxane (PDMS) as representative polymers to compare the degree of planarization (DoP), surface roughness, and bonding performance. Cu/PI structures achieved a high DoP up to 99% and low Cu surface roughness below 2 nm, regardless of spindle conditions. In contrast, Cu/PDMS structures achieved only 67% planarization due to PDMS deformation during fly cutting, leaving the PDMS surface lower than the Cu layer. This facilitates earlier Cu–Cu contact during bonding. ATR-Fourier transform infrared spectroscopy (ATR-FTIR) analysis elucidated the surface activation mechanism through O₂ plasma treatment, clarifying the polymer–polymer bonding process through functional group changes. Postbonding FE-SEM evaluation confirmed polymer squeeze behavior and changes in upper and lower Cu pad spacing according to temperature and spindle conditions, along with successful polymer bonding. Fly cutting showed promise as a low-cost polymer planarization method, although further optimization of the polymer and process conditions is needed.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 4","pages":"890-898"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147727190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2026.3682436","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3682436","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 4","pages":"C3-C3"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11489193","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147727243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2026.3682434","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3682434","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 4","pages":"926-926"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11489190","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147727245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Manufacturing of Double-Sided SiP Power Modules via Temporary Carrier-Based Process","authors":"Ping Wu;Linjie Liao;Guoliao Sun;Zhen Liu;Minxuan Liu;Xiaodong Teng;Yiou Qiu;Linzheng Fu;Wenhui Zhu;Liancheng Wang","doi":"10.1109/TCPMT.2026.3666192","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3666192","url":null,"abstract":"This study presents a codesign methodology for high-density double-sided system-in-package (DS-SiP) power modules, combining a novel temporary carrier-based reconstitution process with multiobjective optimization to simultaneously address warpage control and thermomechanical reliability. The proposed approach decouples double-sided molding into sequential single-side steps, effectively eliminating strip substrate warpage after the first molding cycle and minimizing process-induced stress. A high-fidelity finite element model was developed to simulate thermomechanical behavior and identify critical stress locations at die/EMC and die/adhesive interfaces. The package architecture was optimized using Taguchi–gray relational analysis, revealing molding material selection as the most influential factor. A test vehicle was successfully fabricated, incorporating through-mold vias (TMVs) and 3-D component-on-package (CoP) integration. Reliability tests confirmed strong performance under thermal and humidity stresses, with failure analysis validating simulation predictions of interfacial delamination as the dominant failure mechanism. This work provides a scalable and cost-effective framework for developing robust DS-SiP power modules with improved power density and reliability.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 4","pages":"899-907"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147727242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reductive CH4 Plasma-Induced Modification of Cu Surfaces for Low-Temperature Hybrid Bonding","authors":"Hoogwan Lee;Junyoung Choi;Sarah Eunkyung Kim","doi":"10.1109/TCPMT.2026.3665204","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3665204","url":null,"abstract":"As artificial intelligence (AI) and high-performance computing demand greater parallel data processing, next-generation memory architectures must also evolve. High bandwidth memory (HBM) supports this with its 3-D-stacked structure and wide I/O interface, but further improvements in power efficiency and thermal management are still required. In addition, microbumps are currently used for chip stacking face scalability limitations. To address these challenges, hybrid copper (Cu) bonding has been proposed as a promising solution. This study presents a surface treatment strategy for low-temperature Cu-to-Cu direct bonding using CH₄-based reductive plasma: 1) native Cu oxides were removed and 2) re-oxidation was suppressed by forming a hydride carbon passivation layer. A design of experiments (DOEs) approach was used to optimize inductively coupled plasma (ICP) power, CH₄ flow rate, and pressure. Surface analysis was performed using X-ray photoelectron spectroscopy (XPS), TOF-SIMS, transmission electron microscopy (TEM), and sheet resistance measurements, while postbonding evaluation included TEM, SEM, and shear strength analysis. The results demonstrate that the energy of radicals and ions plays a decisive role in Cu oxide reduction, contributing to effective surface activation. The resulting passivation layer was confirmed to be a hydrogenated amorphous carbon (a-C:H) film rich in C, CH, and C₂H species. Bonding was conducted at <inline-formula> <tex-math>$260~mathbf {^{circ }}$ </tex-math></inline-formula>C and 15 MPa for 1 h, followed by postannealing at <inline-formula> <tex-math>$200~mathbf {^{circ }}$ </tex-math></inline-formula>C. TEM analysis revealed a void-free and oxygen-free bonding interface with the presence of carbon, suggesting that the carbon layer acted as a passivating layer. These findings confirm that reductuve CH₄ plasma treatment is highly effective for enabling low-temperature Cu bonding and highlight the strong potential of this approach for next-generation hybrid bonding technologies.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 4","pages":"880-889"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147727244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Selective Laser Modification for Stress Mitigation and Warpage Reduction in Advanced 3DIC and Optoelectronic Packaging","authors":"Yu-Lin Kao;Lon A. Wang","doi":"10.1109/TCPMT.2026.3665296","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3665296","url":null,"abstract":"Selective laser scanning enables spatially localized tuning of polyimide (PI) thermo-mechanical properties to mitigate thermally induced stress and warpage in advanced 3DIC and optoelectronic packaging, without changing the global material selection. Laser-processed PI films are characterized, and the resulting property changes are incorporated into a 2-D plane-strain finite-element model. The representative coupon/model has an in-plane span of 10 mm and a total thickness of <inline-formula> <tex-math>$50~mu $ </tex-math></inline-formula>m (<inline-formula> <tex-math>$47~mu $ </tex-math></inline-formula>m Si with <inline-formula> <tex-math>$3~mu $ </tex-math></inline-formula>m PI). Local modification is applied only in 1 mm corner patches to target high-stress regions, while the remaining PI remains pristine. Using a minimal-constraint (free-warpage) boundary condition and mesh-objective evaluation metrics (warpage and near-corner area-averaged stress), the localized modification reduces warpage and mitigates stress concentration; solder fatigue trends are assessed via inelastic strain-energy density per cycle (Darveaux).","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 4","pages":"917-921"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147727189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Miniaturized 3-D Integrated Low-Pass Filter Using a Novel Flexibly Configurable Three-Port Capacitor Based on TSV Technology","authors":"Xiangkun Yin;Xiang Li;Fengjuan Wang;Tao Zhang;Qijun Lu;Zhangming Zhu","doi":"10.1109/TCPMT.2026.3667873","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3667873","url":null,"abstract":"A miniaturized three-port capacitor structure based on through-silicon via (TSV) technology is proposed for high-density 3-D integrated radio frequency (RF) circuits. By integrating three interdigital capacitors (IDCs) into a single structure with a common electrode, the proposed capacitor reduces the number of interconnection ports by 50%, significantly improving area efficiency and signal integrity. The structure is validated through full-wave simulation and equivalent circuit modeling, showing good capacitive performance and high self-resonant frequency. A compact low- pass filter (LPF) is demonstrated using the proposed capacitor, achieving a cutoff frequency of 3.99 GHz, an insertion loss of 0.18 dB, and a return loss better than 25 dB within an area of <inline-formula> <tex-math>$0.32times 0.31$ </tex-math></inline-formula> mm².","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 4","pages":"922-925"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147727191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Direct Bonding Technique for Integration and Vertical Interconnection of Metal-Air Coaxial Lines","authors":"Yang Liu;Xuyao Zhang;Shengying Zou;Yiqun Wang;Jie Lin;Peng Jin","doi":"10.1109/TCPMT.2026.3666542","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3666542","url":null,"abstract":"This article introduces a novel application of thermocompression bonding (TCB) for the 3-D integration of metal-air coaxial lines (MACLs). The approach leverages a prestressed protrusion of the inner conductor to ensure reliable metal-to-metal contact, enabling multilayer interconnection without solder or interposers. Double-layer MACL prototypes were fabricated and evaluated through electromagnetic and thermomechanical simulations, fabrication tolerance studies, and reliability testing. The bonded interconnects achieved insertion loss (IL) below 0.45 dB, isolation exceeding 58 dB across the 1–43-GHz frequency range, and shear strength of up to 8 MPa. The proposed method combines broadband, low-loss transmission with robust mechanical integrity while mitigating issues associated with thermal expansion mismatch. To illustrate its applicability, a compact switch-based true time delay unit (TDU) was demonstrated, further underscoring the potential of TCB-enabled MACL for ultrawideband, highly integrated radio frequency (RF) components and microsystems.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 4","pages":"908-916"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147727192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2026.3666448","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3666448","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 3","pages":"642-642"},"PeriodicalIF":3.0,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11430663","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147388474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2026.3666450","DOIUrl":"https://doi.org/10.1109/TCPMT.2026.3666450","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"16 3","pages":"C3-C3"},"PeriodicalIF":3.0,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11430661","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147388475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}